Class information for:
Level 2: FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
474 15884 20.3 58%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
2169 1                   IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE 2334
2603 1                   STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN 2199
3298 1                   SILICON OXYNITRIDE//SILICON NITRIDE//SILICON NITRIDE FILM 2017
3635 1                   SI OXIDATION//SILICON OXIDATION//SIO2 SI INTERFACE 1940
6002 1                   BORON PENETRATION//NITRIDED OXIDE//OXYNITRIDATION 1545
6607 1                   SONOS//FLASH MEMORY//NAND FLASH MEMORY 1464
11111 1                   TEOS PECVD//TEOS//FEATURE SCALE 1007
14061 1                   NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI 795
19608 1                   SI SIO2//GE INSULATOR STRUCTURE//MICROWAVE TRANSIENT PHOTOCONDUCTIVITY 497
21194 1                   SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP 429
21911 1                   POLYOXIDE//INTER POLY DIELECTRIC IPD//INTERPOLY OXIDE 400
24686 1                   LOW TEMPERATURE SILICON OXIDATION//DIRECTIONAL OXIDATION//HIGH RATE SILICON OXIDATION 304
25406 1                   MSOS O P STRUCTURE//SI2H6 GAS//SEMI INSULATING POLYCRYSTALLINE SILICON 282
28032 1                   MIS TUNNEL DIODE//ANODIC OXIDE ANO//COMPOSED CAPACITOR 215
30953 1                   ANTIFUSE//MULTITIME PROGRAMMABLE MTP//ONE TIME PROGRAMMABLE MEMORY 160
33212 1                   J AN SCI TECHNOL ORG//CYANIDE TREATMENT//DISPLAY TECHNOL DEV GRP 128
34788 1                   CERIUM MAGNETOPLUMBITE//EDS SPECTRA//ENAMEL INSERT RESTORATION 106
37271 1                   GRAZING X RAY REFLECTOMETRY//ANOMALOUS DISPERSION EFFECT//BI POLAR DESIGN 62

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 FLASH MEMORY authKW 253418 2% 40% 333
2 SONOS authKW 208334 1% 85% 128
3 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI authKW 195438 1% 65% 156
4 IEEE TRANSACTIONS ON NUCLEAR SCIENCE journal 189917 8% 8% 1285
5 MICROELECTRONICS RELIABILITY journal 126758 4% 10% 678
6 PHYSICS, APPLIED WoSSC 116899 55% 1% 8700
7 IEEE ELECTRON DEVICE LETTERS journal 95827 4% 8% 673
8 TOTAL IONIZING DOSE authKW 92758 1% 56% 86
9 INTERFACE TRAPS authKW 91224 1% 41% 115
10 IEEE TRANSACTIONS ON ELECTRON DEVICES journal 90813 5% 6% 852

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 116899 55% 1% 8700
2 Engineering, Electrical & Electronic 71225 40% 1% 6325
3 Materials Science, Coatings & Films 53324 14% 1% 2147
4 Physics, Condensed Matter 15785 18% 0% 2883
5 Nuclear Science & Technology 15477 10% 1% 1556
6 Nanoscience & Nanotechnology 13934 11% 1% 1716
7 Electrochemistry 5015 5% 0% 850
8 Materials Science, Multidisciplinary 4087 14% 0% 2289
9 Materials Science, Ceramics 1791 2% 0% 391
10 Computer Science, Hardware & Architecture 424 1% 0% 194

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 RREACT GRP 54275 0% 91% 31
2 RD TECHNOL DEV 28218 0% 70% 21
3 MICROELECT 26687 3% 3% 495
4 EMERGING CENT 23095 0% 63% 19
5 FLASH DESIGN TEAM 17871 0% 85% 11
6 ZI ROUSSET 16606 0% 58% 15
7 CHRISTIAN DOPPLER TCAD 15554 0% 90% 9
8 ELECT ENGN 14883 9% 1% 1421
9 MEMORY BUSINESS 13517 0% 41% 17
10 AUTOMAT MICROELECT 12692 0% 44% 15

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE 189917 8% 8% 1285
2 MICROELECTRONICS RELIABILITY 126758 4% 10% 678
3 IEEE ELECTRON DEVICE LETTERS 95827 4% 8% 673
4 IEEE TRANSACTIONS ON ELECTRON DEVICES 90813 5% 6% 852
5 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 50468 1% 16% 168
6 SOLID-STATE ELECTRONICS 47654 3% 5% 498
7 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 40002 5% 3% 801
8 MICROELECTRONIC ENGINEERING 34054 3% 4% 428
9 JOURNAL OF APPLIED PHYSICS 24157 8% 1% 1192
10 APPLIED PHYSICS LETTERS 18131 7% 1% 1059

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 FLASH MEMORY 253418 2% 40% 333 Search FLASH+MEMORY Search FLASH+MEMORY
2 SONOS 208334 1% 85% 128 Search SONOS Search SONOS
3 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 195438 1% 65% 156 Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY+NBTI Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY+NBTI
4 TOTAL IONIZING DOSE 92758 1% 56% 86 Search TOTAL+IONIZING+DOSE Search TOTAL+IONIZING+DOSE
5 INTERFACE TRAPS 91224 1% 41% 115 Search INTERFACE+TRAPS Search INTERFACE+TRAPS
6 NAND FLASH MEMORY 87127 1% 42% 107 Search NAND+FLASH+MEMORY Search NAND+FLASH+MEMORY
7 STRESS INDUCED LEAKAGE CURRENT 85082 0% 92% 48 Search STRESS+INDUCED+LEAKAGE+CURRENT Search STRESS+INDUCED+LEAKAGE+CURRENT
8 SILICON OXYNITRIDE 81955 1% 43% 100 Search SILICON+OXYNITRIDE Search SILICON+OXYNITRIDE
9 OXIDE RELIABILITY 76825 0% 78% 51 Search OXIDE+RELIABILITY Search OXIDE+RELIABILITY
10 TOTAL DOSE EFFECTS 70135 0% 83% 44 Search TOTAL+DOSE+EFFECTS Search TOTAL+DOSE+EFFECTS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 HUGHES, HL , BENEDETTO, JM , (2003) RADIATION EFFECTS AND HARDENING OF MOS TECHNOLOGY: DEVICES AND CIRCUITS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 500-521 244 84% 117
2 FLEETWOOD, DM , (2013) TOTAL IONIZING DOSE EFFECTS IN MOS AND LOW-DOSE-RATE-SENSITIVE LINEAR-BIPOLAR DEVICES.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 60. ISSUE 3. P. 1706-1730 161 94% 34
3 SCHWANK, JR , SHANEYFELT, MR , FLEETWOOD, DM , FELIX, JA , DODD, PE , PAILLET, P , FERLET-CAVROIS, V , (2008) RADIATION EFFECTS IN MOS OXIDES.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 55. ISSUE 4. P. 1833 -1853 104 96% 163
4 HABRAKEN, FHPM , KUIPER, AET , (1994) SILICON-NITRIDE AND OXYNITRIDE FILMS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 12. ISSUE 3. P. 123 -175 181 87% 129
5 FLEETWOOD, DM , (2002) EFFECTS OF HYDROGEN TRANSPORT AND REACTIONS ON MICROELECTRONICS RADIATION RESPONSE AND RELIABILITY.MICROELECTRONICS RELIABILITY. VOL. 42. ISSUE 4-5. P. 523 -541 146 82% 60
6 OLDHAM, TR , MCLEAN, FB , (2003) TOTAL IONIZING DOSE EFFECTS IN MOS OXIDES AND DEVICES.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 483 -499 94 94% 251
7 LOMBARDO, S , STATHIS, JH , LINDER, BP , PEY, KL , PALUMBO, F , TUNG, CH , (2005) DIELECTRIC BREAKDOWN MECHANISMS IN GATE OXIDES.JOURNAL OF APPLIED PHYSICS. VOL. 98. ISSUE 12. P. - 97 92% 169
8 MIRANDA, E , SUNE, J , (2004) ELECTRON TRANSPORT THROUGH BROKEN DOWN ULTRA-THIN SIO2 LAYERS IN MOS DEVICES.MICROELECTRONICS RELIABILITY. VOL. 44. ISSUE 1. P. 1-23 111 90% 62
9 BAUMVOL, IJR , (1999) ATOMIC TRANSPORT DURING GROWTH OF ULTRATHIN DIELECTRICS ON SILICON.SURFACE SCIENCE REPORTS. VOL. 36. ISSUE 1-8. P. 1 -166 127 85% 95
10 FLEETWOOD, DM , EISEN, HA , (2003) TOTAL-DOSE RADIATION HARDNESS ASSURANCE.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 552-564 108 95% 38

Classes with closest relation at Level 2


Rank Class id link
1 3149 CLEANROOM//PHOTORESIST REMOVAL//MINIENVIRONMENT
2 3031 RADIATION INDUCED ATTENUATION//H CURIEN//PHYS ASTRON SCI
3 532 IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET
4 664 ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS
5 1327 SILICON NANOCRYSTALS//SI NANOCRYSTALS//ERBIUM
6 3506 RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY
7 3561 DIELECTRIC PHENOMENA//CBH MECHANISM//EUROPIUM INDIUM OXIDE
8 3874 AC SURFACE PHOTOVOLTAGE//TECH M PUPIN//SCANNING PHOTON MICROSCOPE
9 1699 HETEROJUNCTION BIPOLAR TRANSISTORS//SIGEHBT//HBT
10 1385 POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS

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