Class information for:
Level 1: POLYOXIDE//INTER POLY DIELECTRIC IPD//INTERPOLY OXIDE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
21911 400 14.8 49%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
21911 1                   POLYOXIDE//INTER POLY DIELECTRIC IPD//INTERPOLY OXIDE 400

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 POLYOXIDE authKW 340044 2% 64% 7
2 INTER POLY DIELECTRIC IPD authKW 174482 1% 57% 4
3 INTERPOLY OXIDE authKW 152675 1% 100% 2
4 LPCVD SI LAYERS authKW 152675 1% 100% 2
5 NONPLANAR POLYOXIDE authKW 152675 1% 100% 2
6 3D STACKED CAPACITORS authKW 76338 0% 100% 1
7 64MBIT DRAMS authKW 76338 0% 100% 1
8 AMORPHOUS SI LAYER authKW 76338 0% 100% 1
9 BORON ACTIVITY authKW 76338 0% 100% 1
10 CC MOSFET authKW 76338 0% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Materials Science, Coatings & Films 4013 23% 0% 92
2 Physics, Applied 2970 55% 0% 220
3 Engineering, Electrical & Electronic 1861 41% 0% 162
4 Electrochemistry 1362 16% 0% 64
5 Physics, Condensed Matter 234 15% 0% 58
6 Nanoscience & Nanotechnology 178 8% 0% 32
7 Materials Science, Multidisciplinary 90 14% 0% 55
8 Instruments & Instrumentation 23 3% 0% 13
9 Microscopy 14 1% 0% 3
10 Telecommunications 2 1% 0% 5

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ETUDES MODELISAT ELE OTECH LAMEL 76338 0% 100% 1
2 IST FIS BIOINGN 76338 0% 100% 1
3 PROC ENGN 4 76338 0% 100% 1
4 RD NONVOLATILE MEMORY DEVICE GRP 76338 0% 100% 1
5 ROGER ADAMS 207 76338 0% 100% 1
6 SCI CORE TECH GRP 76338 0% 100% 1
7 TI SILICON TECHNOL DEV 76338 0% 100% 1
8 MEMORY TECHNOL 76336 1% 50% 2
9 TEAM ELE OANAL ELE OCHEM 38168 0% 50% 1
10 TEKTRONIX 38168 0% 50% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE ELECTRON DEVICE LETTERS 10366 9% 0% 35
2 RCA REVIEW 9930 1% 3% 5
3 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 9771 16% 0% 62
4 IEEE TRANSACTIONS ON ELECTRON DEVICES 8843 11% 0% 42
5 SOLID-STATE ELECTRONICS 1499 4% 0% 14
6 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1302 4% 0% 17
7 CATALYSIS SURVEYS FROM JAPAN 1089 0% 1% 1
8 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 690 4% 0% 17
9 SOLID STATE TECHNOLOGY 652 1% 0% 4
10 THIN SOLID FILMS 584 4% 0% 17

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 POLYOXIDE 340044 2% 64% 7 Search POLYOXIDE Search POLYOXIDE
2 INTER POLY DIELECTRIC IPD 174482 1% 57% 4 Search INTER+POLY+DIELECTRIC+IPD Search INTER+POLY+DIELECTRIC+IPD
3 INTERPOLY OXIDE 152675 1% 100% 2 Search INTERPOLY+OXIDE Search INTERPOLY+OXIDE
4 LPCVD SI LAYERS 152675 1% 100% 2 Search LPCVD+SI+LAYERS Search LPCVD+SI+LAYERS
5 NONPLANAR POLYOXIDE 152675 1% 100% 2 Search NONPLANAR+POLYOXIDE Search NONPLANAR+POLYOXIDE
6 3D STACKED CAPACITORS 76338 0% 100% 1 Search 3D+STACKED+CAPACITORS Search 3D+STACKED+CAPACITORS
7 64MBIT DRAMS 76338 0% 100% 1 Search 64MBIT+DRAMS Search 64MBIT+DRAMS
8 AMORPHOUS SI LAYER 76338 0% 100% 1 Search AMORPHOUS+SI+LAYER Search AMORPHOUS+SI+LAYER
9 BORON ACTIVITY 76338 0% 100% 1 Search BORON+ACTIVITY Search BORON+ACTIVITY
10 CC MOSFET 76338 0% 100% 1 Search CC+MOSFET Search CC+MOSFET

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 KAO, CH , LAI, CS , LEE, CL , (2006) POLARITY ASYMMETRY OF POLYOXIDE GROWN ON PHOSPHORUS IN SITU DOPED POLYSILICON.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 153. ISSUE 9. P. G860-G865 21 91% 0
2 KLOOTWIJK, JH , VAN KRANENBURG, H , WOERLEE, PH , WALLINGA, H , (1999) DEPOSITED INTER-POLYSILICON DIELECTRICS FOR NONVOLATILE MEMORIES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 46. ISSUE 7. P. 1435 -1445 25 63% 14
3 KAO, CH , SUNG, WH , CHEN, CS , (2008) INVESTIGATION OF THE DOPING AND THICKNESS EFFECTS OF POLYSILICON OXIDE BY RAPID THERMAL N2O OXIDATION.MICROELECTRONIC ENGINEERING. VOL. 85. ISSUE 2. P. 408-413 12 100% 0
4 KAO, CH , LAI, CS , LEE, CL , (2006) OXIDE GROWN ON POLYCRYSTAL SILICON BY RAPID THERMAL OXIDATION IN N2O.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 153. ISSUE 2. P. G128-G133 16 73% 7
5 YANG, WL , CHAO, TS , CHENG, CM , PAN, TM , LEI, TF , (2001) HIGH QUALITY INTERPOLY DIELECTRICS DEPOSITED ON THE NITRIDED-POLYSILICON FOR NONVOLATILE MEMORY DEVICES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 48. ISSUE 7. P. 1304 -1309 17 71% 5
6 NOVAK, AV , NIKOL'SKII, YV , FOKICHEV, SN , (2012) STUDYING THE MORPHOLOGY OF HEMISPHERICAL-GRAIN POLYCRYSTALLINE SILICON FILMS.TECHNICAL PHYSICS LETTERS. VOL. 38. ISSUE 8. P. 732-735 9 90% 1
7 CHAO, TS , CHEN, JH , LEI, TF , CHEN, JH , (2000) CHARACTERISTICS OF TEOS POLYSILICON OXIDES: IMPROVEMENT BY CMP AND HIGH TEMPERATURE RTA N-2/N2O ANNEALING.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 147. ISSUE 11. P. 4282-4288 11 92% 8
8 NOVAK, AV , (2014) FORMATION OF POLYCRYSTALLINE-SILICON FILMS WITH HEMISPHERICAL GRAINS FOR CAPACITOR STRUCTURES WITH INCREASED CAPACITANCE.SEMICONDUCTORS. VOL. 48. ISSUE 13. P. 1724 -1728 7 88% 0
9 LEI, TF , CHEN, JH , WANG, MF , CHAO, TS , (2000) CHARACTERISTICS OF POLYSILICON OXIDES COMBINING N2O NITRIDATION AND CMP PROCESSES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 47. ISSUE 8. P. 1545-1552 10 83% 1
10 MATHEWS, VK , DITALI, A , FAZAN, PC , (1994) PHYSICAL AND ELECTRICAL CHARACTERISTICS OF THIN SILICON-NITRIDE DIELECTRIC FILMS DEPOSITED ON SMOOTH AND RUGGED POLYCRYSTALLINE SILICON AFTER RAPID THERMAL NITRIDATION.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 141. ISSUE 4. P. 1066-1070 13 76% 0

Classes with closest relation at Level 1


Rank Class id link
1 6002 BORON PENETRATION//NITRIDED OXIDE//OXYNITRIDATION
2 6607 SONOS//FLASH MEMORY//NAND FLASH MEMORY
3 25406 MSOS O P STRUCTURE//SI2H6 GAS//SEMI INSULATING POLYCRYSTALLINE SILICON
4 1611 POLY SI TFT//POLY SI//METAL INDUCED LATERAL CRYSTALLIZATION MILC
5 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
6 33212 J AN SCI TECHNOL ORG//CYANIDE TREATMENT//DISPLAY TECHNOL DEV GRP
7 23664 007 MICROMETER TECHNOLOGIES//05 MICROMETER TECHNOLOGIES//5 LAYERS OF METAL
8 10953 REBIC//HEAVILY DOPED POLYSILICON RESISTOR//MELTING SEGREGATION MODEL
9 3298 SILICON OXYNITRIDE//SILICON NITRIDE//SILICON NITRIDE FILM
10 10828 EPITAXIAL REACTOR//MOCVD REACTOR//PLANETARY REACTOR

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