Class information for:
Level 2: RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
3506 1431 20.8 51%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
3506 2             RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY 1431
10828 1                   EPITAXIAL REACTOR//MOCVD REACTOR//PLANETARY REACTOR 1032
21961 1                   RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//SILICON NANOELECT 399

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 RAPID THERMAL PROCESSING authKW 182931 3% 21% 41
2 RAPID THERMAL PROCESSING RTP authKW 167323 1% 39% 20
3 WAFER TEMPERATURE UNIFORMITY authKW 85347 0% 100% 4
4 SILICON NANOELECT address 75855 1% 44% 8
5 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING journal 72655 5% 5% 73
6 EPITAXIAL REACTOR authKW 64010 0% 100% 3
7 MOCVD REACTOR authKW 64010 0% 100% 3
8 THERMAL BUDGET CONTROL authKW 64010 0% 100% 3
9 PLANETARY REACTOR authKW 56895 0% 67% 4
10 JOURNAL OF CRYSTAL GROWTH journal 50885 19% 1% 272

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Crystallography 9083 22% 0% 312
2 Physics, Applied 8647 50% 0% 715
3 Materials Science, Coatings & Films 5530 14% 0% 207
4 Materials Science, Multidisciplinary 3242 35% 0% 496
5 Electrochemistry 1641 10% 0% 137
6 Engineering, Manufacturing 1554 6% 0% 85
7 Physics, Condensed Matter 932 15% 0% 217
8 Engineering, Electrical & Electronic 683 15% 0% 215
9 Thermodynamics 504 5% 0% 77
10 Engineering, Chemical 409 8% 0% 120

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SILICON NANOELECT 75855 1% 44% 8
2 EPITAXIAL SILICON TECHNOL 42674 0% 100% 2
3 OBERFLACHEN ICHTENANALYT 42674 0% 100% 2
4 TOURISM DESIGN 42674 0% 100% 2
5 FUNDAMENTAL SCI DEF WIDE BAND G SE 28448 0% 67% 2
6 RTP PROD BUSINESS UNIT 28448 0% 67% 2
7 ISOBE RD 28067 0% 26% 5
8 NANOELE SYST INFORMAT TECHNOL 24000 0% 38% 3
9 AUTOMOBILE HI TECH 21337 0% 100% 1
10 CANMET MET TECHNOL S 21337 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 72655 5% 5% 73
2 JOURNAL OF CRYSTAL GROWTH 50885 19% 1% 272
3 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 10994 9% 0% 125
4 JOURNAL DE PHYSIQUE IV 3947 3% 0% 44
5 SOLID STATE TECHNOLOGY 2565 1% 1% 15
6 JOURNAL OF ELECTRONIC MATERIALS 2485 2% 0% 34
7 CRYSTAL RESEARCH AND TECHNOLOGY 2176 2% 0% 26
8 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 1625 1% 1% 10
9 CHEMICAL VAPOR DEPOSITION 1358 1% 1% 8
10 PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS 1186 0% 1% 6

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 RAPID THERMAL PROCESSING 182931 3% 21% 41 Search RAPID+THERMAL+PROCESSING Search RAPID+THERMAL+PROCESSING
2 RAPID THERMAL PROCESSING RTP 167323 1% 39% 20 Search RAPID+THERMAL+PROCESSING+RTP Search RAPID+THERMAL+PROCESSING+RTP
3 WAFER TEMPERATURE UNIFORMITY 85347 0% 100% 4 Search WAFER+TEMPERATURE+UNIFORMITY Search WAFER+TEMPERATURE+UNIFORMITY
4 EPITAXIAL REACTOR 64010 0% 100% 3 Search EPITAXIAL+REACTOR Search EPITAXIAL+REACTOR
5 MOCVD REACTOR 64010 0% 100% 3 Search MOCVD+REACTOR Search MOCVD+REACTOR
6 THERMAL BUDGET CONTROL 64010 0% 100% 3 Search THERMAL+BUDGET+CONTROL Search THERMAL+BUDGET+CONTROL
7 PLANETARY REACTOR 56895 0% 67% 4 Search PLANETARY+REACTOR Search PLANETARY+REACTOR
8 SIMS DEPTH PROFILE 48487 0% 45% 5 Search SIMS+DEPTH+PROFILE Search SIMS+DEPTH+PROFILE
9 PARASITIC DEPOSITION 48006 0% 75% 3 Search PARASITIC+DEPOSITION Search PARASITIC+DEPOSITION
10 RAPID ISOTHERMAL PROCESSING RIP 48006 0% 75% 3 Search RAPID+ISOTHERMAL+PROCESSING+RIP Search RAPID+ISOTHERMAL+PROCESSING+RIP

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 HOLSTEIN, WL , (1992) DESIGN AND MODELING OF CHEMICAL VAPOR-DEPOSITION REACTORS.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 24. ISSUE 2. P. 111-211 75 78% 28
2 MASI, M , DI STANISLAO, M , VENERONI, A , (2003) FLUID-DYNAMICS DURING VAPOR EPITAXY AND MODELING.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 47. ISSUE 2-3. P. 239 -270 32 94% 8
3 KLEIJN, CR , DORSMAN, R , KUIJLAARS, KJ , OKKERSE, M , VAN SANTEN, H , (2007) MULTI-SCALE MODELING OF CHEMICAL VAPOR DEPOSITION PROCESSES FOR THIN FILM TECHNOLOGY.JOURNAL OF CRYSTAL GROWTH. VOL. 303. ISSUE 1. P. 362 -380 59 42% 32
4 MASI, M , KOMMU, S , (2001) EPITAXIAL GROWTH MODELING.SILICON EPITAXY. VOL. 72. ISSUE . P. 185 -224 40 77% 3
5 KLEIJN, CR , (2000) COMPUTATIONAL MODELING OF TRANSPORT PHENOMENA AND DETAILED CHEMISTRY IN CHEMICAL VAPOR DEPOSITION - A BENCHMARK SOLUTION.THIN SOLID FILMS. VOL. 365. ISSUE 2. P. 294 -306 37 69% 55
6 ZHANG, Z , FANG, HS , YAO, QX , YAN, H , GAN, ZY , (2016) SPECIES TRANSPORT AND CHEMICAL REACTION IN A MOCVD REACTOR AND THEIR INFLUENCE ON THE GAN GROWTH UNIFORMITY.JOURNAL OF CRYSTAL GROWTH. VOL. 454. ISSUE . P. 87 -95 20 83% 0
7 ZHANG, Z , FANG, HS , YAN, H , JIANG, ZM , ZHENG, J , GAN, ZY , (2015) INFLUENCING FACTORS OF GAN GROWTH UNIFORMITY THROUGH ORTHOGONAL TEST ANALYSIS.APPLIED THERMAL ENGINEERING. VOL. 91. ISSUE . P. 53 -61 20 80% 3
8 GKINIS, PA , AVIZIOTIS, IG , KORONAKI, ED , GAKIS, GP , BOUDOUVIS, AG , (2017) THE EFFECTS OF FLOW MULTIPLICITY ON GAN DEPOSITION IN A ROTATING DISK CVD REACTOR.JOURNAL OF CRYSTAL GROWTH. VOL. 458. ISSUE . P. 140 -148 16 100% 0
9 HABUKA, H , TSUJI, M , (2012) SILICON EPITAXIAL GROWTH RATE AND TRANSPORT PHENOMENA IN A VERTICAL STACKED-TYPE MULTI-WAFER REACTOR.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 2. P. - 20 87% 0
10 ABEDI, S , FARHADI, F , BOOZARJOMEHRY, RB , (2013) INTEGRATION OF CFD AND NELDER-MEAD ALGORITHM FOR OPTIMIZATION OF MOCVD PROCESS IN AN ATMOSPHERIC PRESSURE VERTICAL ROTATING DISK REACTOR.INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER. VOL. 43. ISSUE . P. 138-145 20 80% 5

Classes with closest relation at Level 2


Rank Class id link
1 603 JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING
2 1299 SIGE//STRAINED SI//VIRTUAL SUBSTRATE
3 2014 BETA DIKETONATE//DIMETHYLALUMINUM HYDRIDE//CHEMICAL VAPOR DEPOSITION
4 474 FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI
5 3532 INFRARED EMISSIVITY//EMISSIVITY//SPECTRAL EMISSIVITY
6 1385 POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS
7 1998 MULTICRYSTALLINE SILICON//IEEE JOURNAL OF PHOTOVOLTAICS//SOLAR CELLS
8 1826 TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
9 20 GAN//GALLIUM NITRIDE//NITRIDES
10 3149 CLEANROOM//PHOTORESIST REMOVAL//MINIENVIRONMENT

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