Class information for:
Level 1: MIS TUNNEL DIODE//ANODIC OXIDE ANO//COMPOSED CAPACITOR

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
28032 215 19.0 50%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
28032 1                   MIS TUNNEL DIODE//ANODIC OXIDE ANO//COMPOSED CAPACITOR 215

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MIS TUNNEL DIODE authKW 189365 1% 67% 2
2 ANODIC OXIDE ANO authKW 142025 0% 100% 1
3 COMPOSED CAPACITOR authKW 142025 0% 100% 1
4 DIODE REGION authKW 142025 0% 100% 1
5 EDGE FRINGING EFFECT EFE authKW 142025 0% 100% 1
6 EDUCATION AND SOCIETAL ASPECTS authKW 142025 0% 100% 1
7 ELE IFICAT ENTERPRISES IND address 142025 0% 100% 1
8 ELECTRICAL LOCAL THINNING ELT authKW 142025 0% 100% 1
9 ELECTRON STRESSING IN LIQUID authKW 142025 0% 100% 1
10 ENHANCED FRINGING FIELD EFFECT authKW 142025 0% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 2018 61% 0% 132
2 Materials Science, Coatings & Films 1124 17% 0% 36
3 Electrochemistry 440 13% 0% 27
4 Engineering, Electrical & Electronic 377 26% 0% 56
5 Materials Science, Multidisciplinary 284 27% 0% 59
6 Physics, Condensed Matter 201 18% 0% 38
7 Nanoscience & Nanotechnology 69 7% 0% 15
8 Materials Science, Ceramics 6 1% 0% 3
9 Instruments & Instrumentation 4 2% 0% 5
10 Optics 4 3% 0% 7

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELE IFICAT ENTERPRISES IND 142025 0% 100% 1
2 INFORMAT RADIOELECT EDUC 142025 0% 100% 1
3 MODULE TECHNOL 47340 0% 33% 1
4 521 17751 0% 13% 1
5 ABT PHOTOVOLTA 17751 0% 13% 1
6 ADV NANOMAT DEVICES 15779 0% 11% 1
7 IUT 1 14201 0% 10% 1
8 ADV MAT MICRO NANO SYST 8875 0% 6% 1
9 HYDROCARBU CHIM 7099 0% 5% 1
10 EMERGING CENT 4732 0% 3% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 3726 9% 0% 20
2 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 2120 2% 0% 4
3 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 1876 9% 0% 20
4 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 1744 2% 0% 4
5 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 1001 6% 0% 12
6 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 991 1% 0% 2
7 REVUE DE PHYSIQUE APPLIQUEE 966 1% 0% 3
8 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 783 0% 1% 1
9 IEEE ELECTRON DEVICE LETTERS 763 3% 0% 7
10 RECENT PATENTS ON NANOTECHNOLOGY 746 0% 1% 1

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 MIS TUNNEL DIODE 189365 1% 67% 2 Search MIS+TUNNEL+DIODE Search MIS+TUNNEL+DIODE
2 ANODIC OXIDE ANO 142025 0% 100% 1 Search ANODIC+OXIDE+ANO Search ANODIC+OXIDE+ANO
3 COMPOSED CAPACITOR 142025 0% 100% 1 Search COMPOSED+CAPACITOR Search COMPOSED+CAPACITOR
4 DIODE REGION 142025 0% 100% 1 Search DIODE+REGION Search DIODE+REGION
5 EDGE FRINGING EFFECT EFE 142025 0% 100% 1 Search EDGE+FRINGING+EFFECT+EFE Search EDGE+FRINGING+EFFECT+EFE
6 EDUCATION AND SOCIETAL ASPECTS 142025 0% 100% 1 Search EDUCATION+AND+SOCIETAL+ASPECTS Search EDUCATION+AND+SOCIETAL+ASPECTS
7 ELECTRICAL LOCAL THINNING ELT 142025 0% 100% 1 Search ELECTRICAL+LOCAL+THINNING+ELT Search ELECTRICAL+LOCAL+THINNING+ELT
8 ELECTRON STRESSING IN LIQUID 142025 0% 100% 1 Search ELECTRON+STRESSING+IN+LIQUID Search ELECTRON+STRESSING+IN+LIQUID
9 ENHANCED FRINGING FIELD EFFECT 142025 0% 100% 1 Search ENHANCED+FRINGING+FIELD+EFFECT Search ENHANCED+FRINGING+FIELD+EFFECT
10 FIELD EFFECT CAPACITOR 142025 0% 100% 1 Search FIELD+EFFECT+CAPACITOR Search FIELD+EFFECT+CAPACITOR

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 YANG, CF , HWU, JG , (2016) ROLE OF FRINGING FIELD ON THE ELECTRICAL CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH CO-PLANAR AND EDGE-REMOVED OXIDES.AIP ADVANCES. VOL. 6. ISSUE 12. P. - 14 61% 0
2 LIN, YK , HWU, JG , (2014) ROLE OF LATERAL DIFFUSION CURRENT IN PERIMETER-DEPENDENT CURRENT OF MOS(P) TUNNELING TEMPERATURE SENSORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 10. P. 3562 -3565 8 80% 1
3 CHEN, TY , HWU, JG , (2014) EFFECT OF TRAPPED ELECTRONS IN ULTRATHIN SIO2 ON THE TWO-STATE INVERSION CAPACITANCE AT VARIED FREQUENCIES OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 116. ISSUE 4. P. 1971 -1977 11 52% 0
4 KAILATH, BJ , DASGUPTA, A , DASGUPTA, N , (2007) ELECTRICAL AND RELIABILITY CHARACTERISTICS OF MOS DEVICES WITH ULTRATHIN SIO2 GROWN IN NITRIC ACID SOLUTIONS.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 7. ISSUE 4. P. 602-610 10 67% 3
5 KAILATH, BJ , DASGUPTA, A , DASGUPTA, N , (2006) IMPROVEMENT IN THE INTERFACIAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF ULTRATHIN SIO2 BY SELECTIVE AC ANODISATION.IETE JOURNAL OF RESEARCH. VOL. 52. ISSUE 5. P. 357-363 9 75% 0
6 KAILATH, BJ , DASGUPTA, A , DASGUPTA, N , (2007) OPTIMISATION OF AC ANODISATION PARAMETERS FOR THE IMPROVEMENT OF ELECTRICAL PROPERTIES OF THERMALLY GROWN ULTRATHIN GATE OXIDE.SOLID-STATE ELECTRONICS. VOL. 51. ISSUE 5. P. 762-770 9 64% 2
7 CHEN, JY , KAO, WC , HWU, JG , (2016) ENHANCED SATURATION CURRENT SENSITIVITIES TO CHARGE TRAPPING AND ILLUMINATION IN MOS TUNNEL DIODE BY INSERTING METAL IN GATE DIELECTRIC.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 122. ISSUE 6. P. - 9 50% 0
8 WOON, WS , HUTAGATUNG, SD , CHEONG, KY , (2008) STRUCTURAL CHARACTERISATION OF ANODIC SIO2 THIN FILMS ON N-TYPE SI.SURFACE ENGINEERING. VOL. 24. ISSUE 5. P. 388 -391 7 70% 0
9 BUTTARD, D , KRIEG, C , FOURNEL, F , (2006) NANOMETRIC THINNING OF BONDED SILICON WAFERS USING SACRIFICIAL ANODIC OXIDATION AND INVESTIGATED BY X-RAY REFLECTIVITY.SURFACE SCIENCE. VOL. 600. ISSUE 22. P. 4923-4930 9 47% 1
10 LIN, CC , HWU, JG , (2013) PERFORMANCE ENHANCEMENT OF METAL-OXIDE-SEMICONDUCTOR TUNNELING TEMPERATURE SENSORS WITH NANOSCALE OXIDES BY EMPLOYING ULTRATHIN AL2O3 HIGH-K DIELECTRICS.NANOSCALE. VOL. 5. ISSUE 17. P. 8090 -8097 10 34% 5

Classes with closest relation at Level 1


Rank Class id link
1 33212 J AN SCI TECHNOL ORG//CYANIDE TREATMENT//DISPLAY TECHNOL DEV GRP
2 34788 CERIUM MAGNETOPLUMBITE//EDS SPECTRA//ENAMEL INSERT RESTORATION
3 13493 CHAIR GEN MAT SCI//MACROPOROUS SILICON//ELECTROCHEMICAL ETCHING
4 3635 SI OXIDATION//SILICON OXIDATION//SIO2 SI INTERFACE
5 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
6 23114 LEHRSTUHL HALBLEITERTECH//MOS TUNNEL STRUCTURE//SI MIS TET
7 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
8 25406 MSOS O P STRUCTURE//SI2H6 GAS//SEMI INSULATING POLYCRYSTALLINE SILICON
9 24872 DEVICE FUNCT SECT//DIFFUSION TEMPERATURE//MIS SOLAR CELLS
10 37496 NONHERMETIC//OPTICAL TRANSCEIVER MODULES//PLASTIC OPTICAL TRANSCEIVER MODULES

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