Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
24686 | 304 | 18.0 | 47% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
474 | 2 | FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI | 15884 |
24686 | 1 | LOW TEMPERATURE SILICON OXIDATION//DIRECTIONAL OXIDATION//HIGH RATE SILICON OXIDATION | 304 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | LOW TEMPERATURE SILICON OXIDATION | authKW | 301334 | 1% | 100% | 3 |
2 | DIRECTIONAL OXIDATION | authKW | 200890 | 1% | 100% | 2 |
3 | HIGH RATE SILICON OXIDATION | authKW | 200890 | 1% | 100% | 2 |
4 | JORGENSEN MOTT MODEL | authKW | 200890 | 1% | 100% | 2 |
5 | OXYGEN NEGATIVE ION | authKW | 150664 | 1% | 50% | 3 |
6 | PLASMA OXIDATION | authKW | 105412 | 4% | 8% | 13 |
7 | AL2O3 CENTER DOT SIO2 COMPOSITE THIN FILM | authKW | 100445 | 0% | 100% | 1 |
8 | COPLANAR DBD | authKW | 100445 | 0% | 100% | 1 |
9 | CR ETCHING | authKW | 100445 | 0% | 100% | 1 |
10 | DIRECTIONAL SILICON OXIDATION | authKW | 100445 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 4016 | 26% | 0% | 80 |
2 | Physics, Applied | 3553 | 68% | 0% | 207 |
3 | Physics, Condensed Matter | 798 | 28% | 0% | 85 |
4 | Materials Science, Multidisciplinary | 196 | 20% | 0% | 62 |
5 | Engineering, Electrical & Electronic | 190 | 17% | 0% | 51 |
6 | Electrochemistry | 137 | 6% | 0% | 19 |
7 | Nanoscience & Nanotechnology | 75 | 6% | 0% | 19 |
8 | COMPUTER APPLICATIONS & CYBERNETICS | 36 | 0% | 0% | 1 |
9 | Chemistry, Physical | 14 | 8% | 0% | 24 |
10 | Materials Science, Ceramics | 3 | 1% | 0% | 3 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MAT SCI MINERAL ENGN XRAY OPT | 100445 | 0% | 100% | 1 |
2 | MITERCNR | 100445 | 0% | 100% | 1 |
3 | SDPM ENGN | 100445 | 0% | 100% | 1 |
4 | SOALR TERR ENVIRONM | 100445 | 0% | 100% | 1 |
5 | CHEVREUL | 66961 | 1% | 33% | 2 |
6 | CHAIRE UNESCO SUR GEST EAU | 50221 | 0% | 50% | 1 |
7 | ADV MARKING S | 33480 | 0% | 33% | 1 |
8 | LASIRUMR 8516 | 33480 | 0% | 33% | 1 |
9 | OPTOMECHATORON | 25110 | 0% | 25% | 1 |
10 | YAMANASHI | 25110 | 0% | 25% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THIN SOLID FILMS | 2470 | 10% | 0% | 30 |
2 | APPLICATIONS OF SURFACE SCIENCE | 1743 | 1% | 1% | 3 |
3 | JOURNAL OF APPLIED PHYSICS | 1556 | 13% | 0% | 41 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1353 | 1% | 0% | 4 |
5 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1062 | 6% | 0% | 18 |
6 | APPLIED SURFACE SCIENCE | 805 | 6% | 0% | 17 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 695 | 3% | 0% | 10 |
8 | OPEN CHEMISTRY | 618 | 0% | 1% | 1 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 588 | 3% | 0% | 10 |
10 | JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 569 | 0% | 1% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | TAYLOR, S , ZHANG, JF , ECCLESTON, W , (1993) A REVIEW OF THE PLASMA OXIDATION OF SILICON AND ITS APPLICATIONS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 8. ISSUE 7. P. 1426-1433 | 27 | 79% | 30 |
2 | TAKAHASHI, S , SHINDO, H , (2011) SILICON TRENCH OXIDATION IN DOWNSTREAM OF MICROWAVE OXYGEN PLASMA.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 50. ISSUE 6. P. - | 17 | 68% | 0 |
3 | HESS, DW , (1999) PLASMA ASSISTED OXIDATION, ANODIZATION, AND NITRIDATION OF SILICON.IBM JOURNAL OF RESEARCH AND DEVELOPMENT. VOL. 43. ISSUE 1-2. P. 127-145 | 34 | 45% | 33 |
4 | MATSUO, S , YAMAMOTO, M , SADOH, T , TSURUSHIMA, T , GAO, DW , FURUKAWA, K , NAKASHIMA, H , (2000) EFFECTS OF ION IRRADIATION ON SILICON OXIDATION IN ELECTRON CYCLOTRON RESONANCE ARGON AND OXYGEN MIXED PLASMA.JOURNAL OF APPLIED PHYSICS. VOL. 88. ISSUE 3. P. 1664 -1669 | 19 | 63% | 11 |
5 | CHOKSI, AJ , LAL, R , CHANDORKAR, AN , (1992) GROWTH-KINETICS OF SILICON DIOXIDE ON SILICON IN AN INDUCTIVELY COUPLED RF PLASMA AT CONSTANT ANODIZATION CURRENTS.JOURNAL OF APPLIED PHYSICS. VOL. 72. ISSUE 4. P. 1550-1557 | 18 | 90% | 10 |
6 | HASEGAWA, I , YAMAUCHI, T , SUGAI, H , (2007) MECHANISM OF OXIDATION OF SI SURFACES EXPOSED TO O-2/AR MICROWAVE-EXCITED PLASMA.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 46. ISSUE 1. P. 98 -104 | 11 | 73% | 9 |
7 | CHOKSI, AJ , LAL, R , CHANDORKAR, AN , (1991) ELECTRICAL-PROPERTIES OF SILICON DIOXIDE FILMS GROWN BY INDUCTIVELY COUPLED RF PLASMA ANODIZATION.SOLID-STATE ELECTRONICS. VOL. 34. ISSUE 7. P. 765-770 | 15 | 88% | 3 |
8 | ELJABALY, K , REISMAN, A , (1991) SPECIES CHARGE AND OXIDATION MECHANISM IN THE CATHODIC PLASMA OXIDATION OF SILICON.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 138. ISSUE 4. P. 1071 -1076 | 13 | 100% | 5 |
9 | BUIU, O , KENNEDY, GP , GARTNER, M , TAYLOR, S , (1998) STRUCTURAL ANALYSIS OF SILICON DIOXIDE AND SILICON OXYNITRIDE FILMS PRODUCED USING AN OXYGEN PLASMA.IEEE TRANSACTIONS ON PLASMA SCIENCE. VOL. 26. ISSUE 6. P. 1700 -1712 | 16 | 57% | 5 |
10 | JAJU, V , DALAL, V , (2008) GROWTH AND PROPERTIES OF FLUORINATED PLASMA OXIDE FOR SI MOSFET DEVICES.JOURNAL OF NON-CRYSTALLINE SOLIDS. VOL. 354. ISSUE 19-25. P. 2839-2842 | 7 | 88% | 1 |
Classes with closest relation at Level 1 |