Class information for:
Level 1: SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
21194 429 18.9 60%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
21194 1                   SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP 429

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SINGLE EVENT BURNOUT SEB authKW 1710986 6% 96% 25
2 SINGLE EVENT GATE RUPTURE SEGR authKW 1423542 5% 100% 20
3 RREACT GRP address 1205809 6% 71% 24
4 SINGLE EVENT BURNOUT authKW 1186278 5% 83% 20
5 SEGR authKW 732104 3% 86% 12
6 ION ELECTRON EMISSION MICROSCOPY authKW 615169 3% 79% 11
7 SINGLE EVENT GATE RUPTURE authKW 480441 2% 75% 9
8 FLOATING GATE MEMORIES authKW 455530 2% 80% 8
9 IEEE TRANSACTIONS ON NUCLEAR SCIENCE journal 291240 61% 2% 260
10 POWER MOSFET authKW 286754 8% 12% 35

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Nuclear Science & Technology 22361 66% 0% 285
2 Engineering, Electrical & Electronic 8872 82% 0% 352
3 Nanoscience & Nanotechnology 388 11% 0% 47
4 Physics, Applied 327 20% 0% 86
5 Instruments & Instrumentation 209 8% 0% 33
6 Physics, Nuclear 73 5% 0% 20
7 Physics, Atomic, Molecular & Chemical 12 3% 0% 15
8 Theater 7 0% 0% 1
9 Physics, Multidisciplinary 2 3% 0% 12
10 Engineering, Aerospace 1 0% 0% 2

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 RREACT GRP 1205809 6% 71% 24
2 RD TECHNOL DEV 192166 2% 30% 9
3 FTM ADV RD 126533 1% 44% 4
4 STMICROELECT M6 94901 0% 67% 2
5 DIPARTIMENTO INGN INFORMAZ 84928 13% 2% 55
6 ASRC FED SPACE DEF INC 71177 0% 100% 1
7 DIMAST 71177 0% 100% 1
8 DIP AUTOMAZ ELETTROMAGNETISMO INGN INFORMAZ MAT 71177 0% 100% 1
9 DIPARTIMENTO SCI MEDODI INGN 71177 0% 100% 1
10 FRM ADV RD 71177 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE 291240 61% 2% 260
2 MICROELECTRONICS RELIABILITY 19889 10% 1% 44
3 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 2387 1% 1% 6
4 ENTERTAINMENT DESIGN 2092 0% 3% 1
5 NUCLEAR TECHNOLOGY & RADIATION PROTECTION 751 0% 1% 2
6 JOURNAL OF INSTRUMENTATION 605 1% 0% 6
7 IEEE TRANSACTIONS ON ELECTRON DEVICES 549 3% 0% 11
8 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 419 3% 0% 14
9 IET POWER ELECTRONICS 389 1% 0% 3
10 EPE JOURNAL 306 0% 0% 1

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SINGLE EVENT BURNOUT SEB 1710986 6% 96% 25 Search SINGLE+EVENT+BURNOUT+SEB Search SINGLE+EVENT+BURNOUT+SEB
2 SINGLE EVENT GATE RUPTURE SEGR 1423542 5% 100% 20 Search SINGLE+EVENT+GATE+RUPTURE+SEGR Search SINGLE+EVENT+GATE+RUPTURE+SEGR
3 SINGLE EVENT BURNOUT 1186278 5% 83% 20 Search SINGLE+EVENT+BURNOUT Search SINGLE+EVENT+BURNOUT
4 SEGR 732104 3% 86% 12 Search SEGR Search SEGR
5 ION ELECTRON EMISSION MICROSCOPY 615169 3% 79% 11 Search ION+ELECTRON+EMISSION+MICROSCOPY Search ION+ELECTRON+EMISSION+MICROSCOPY
6 SINGLE EVENT GATE RUPTURE 480441 2% 75% 9 Search SINGLE+EVENT+GATE+RUPTURE Search SINGLE+EVENT+GATE+RUPTURE
7 FLOATING GATE MEMORIES 455530 2% 80% 8 Search FLOATING+GATE+MEMORIES Search FLOATING+GATE+MEMORIES
8 POWER MOSFET 286754 8% 12% 35 Search POWER+MOSFET Search POWER+MOSFET
9 FLOATING GATE CELLS 284708 1% 100% 4 Search FLOATING+GATE+CELLS Search FLOATING+GATE+CELLS
10 FLOATING GATE FG MEMORIES 284708 1% 100% 4 Search FLOATING+GATE+FG+MEMORIES Search FLOATING+GATE+FG+MEMORIES

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 TITUS, JL , (2013) AN UPDATED PERSPECTIVE OF SINGLE EVENT GATE RUPTURE AND SINGLE EVENT BURNOUT IN POWER MOSFETS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 60. ISSUE 3. P. 1912-1928 75 91% 17
2 GERARDIN, S , BAGATIN, M , PACCAGNELLA, A , GRURMANN, K , GLIEM, F , OLDHAM, TR , IROM, F , NGUYEN, DN , (2013) RADIATION EFFECTS IN FLASH MEMORIES.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 60. ISSUE 3. P. 1953-1969 46 79% 29
3 BUSATTO, G , CURRO, G , IANNUZZO, F , PORZIO, A , SANSEVERINO, A , VELARDI, F , (2009) HEAVY-ION INDUCED SINGLE EVENT GATE DAMAGE IN MEDIUM VOLTAGE POWER MOSFETS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 56. ISSUE 6. P. 3573-3581 32 89% 10
4 YU, CH , WANG, Y , FEI, XX , CAO, F , (2016) SIMULATION STUDY OF SINGLE-EVENT BURNOUT IN POWER TRENCH ACCUFETS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 63. ISSUE 5. P. 2709 -2715 25 89% 0
5 SEXTON, FW , (2003) DESTRUCTIVE SINGLE-EVENT EFFECTS IN SEMICONDUCTOR DEVICES AND ICS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 50. ISSUE 3. P. 603-621 43 62% 76
6 BUSATTO, G , CURRO, G , IANNUZZO, F , PORZIO, A , SANSEVERINO, A , VELARDI, F , (2009) EXPERIMENTAL STUDY ABOUT GATE OXIDE DAMAGES IN PATTERNED MOS CAPACITOR IRRADIATED WITH HEAVY IONS.MICROELECTRONICS RELIABILITY. VOL. 49. ISSUE 9-11. P. 1033-1037 25 96% 2
7 YU, CH , WANG, Y , CAO, F , HUANG, LL , WANG, YY , (2015) RESEARCH OF SINGLE-EVENT BURNOUT IN POWER PLANAR VDMOSFETS BY LOCALIZED CARRIER LIFETIME CONTROL.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 1. P. 143 -148 23 82% 0
8 GERARDIN, S , PACCAGNELLA, A , (2010) PRESENT AND FUTURE NON-VOLATILE MEMORIES FOR SPACE.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 57. ISSUE 6. P. 3016 -3039 42 43% 56
9 FORO, LL , TOUBOUL, AD , MICHEZ, A , WROBEL, F , RECH, P , DILILLO, L , FROST, C , SAIGNE, F , (2014) GATE VOLTAGE CONTRIBUTION TO NEUTRON-INDUCED SEB OF TRENCH GATE FIELDSTOP IGBT.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 61. ISSUE 4. P. 1739 -1746 23 82% 0
10 SICONOLFI, S , MEKKI, J , OSER, P , SPIEZIA, G , HUBERT, G , DAVID, JP , (2015) PREDICTION METHODOLOGY FOR PROTON SINGLE EVENT BURNOUT: APPLICATION TO A STRIPFET DEVICE.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 62. ISSUE 6. P. 2635 -2642 20 87% 0

Classes with closest relation at Level 1


Rank Class id link
1 2169 IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE
2 738 SOFT ERROR//SINGLE EVENT UPSET//SINGLE EVENT TRANSIENT
3 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
4 20228 RADFET//PMOS DOSIMETER//DEVICE PHYS MICROELECT
5 6607 SONOS//FLASH MEMORY//NAND FLASH MEMORY
6 22008 GAS FILLED SURGE ARRESTERS//BREAKDOWN TIME DELAY//ELECTRICAL BREAKDOWN TIME DELAY
7 4515 LDMOS//SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE
8 12205 DISPLACEMENT DAMAGE//NONIONIZING ENERGY LOSS//DISPLACEMENT DAMAGE DOSE
9 5040 IGBT//INSULATED GATE BIPOLAR TRANSISTOR IGBT//INSULATED GATE BIPOLAR TRANSISTORS
10 30953 ANTIFUSE//MULTITIME PROGRAMMABLE MTP//ONE TIME PROGRAMMABLE MEMORY

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