Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
14061 | 795 | 23.9 | 55% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
474 | 2 | FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI | 15884 |
14061 | 1 | NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI | 795 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI | authKW | 3615690 | 19% | 63% | 150 |
2 | NEGATIVE BIAS TEMPERATURE INSTABILITY | authKW | 1265937 | 5% | 80% | 41 |
3 | NBTI | authKW | 880926 | 10% | 29% | 80 |
4 | BIAS TEMPERATURE INSTABILITY | authKW | 836780 | 4% | 68% | 32 |
5 | REACTION DIFFUSION R D MODEL | authKW | 622203 | 2% | 90% | 18 |
6 | BIAS TEMPERATURE INSTABILITY BTI | authKW | 491598 | 3% | 53% | 24 |
7 | POSITIVE BIAS TEMPERATURE INSTABILITY PBTI | authKW | 292005 | 3% | 36% | 21 |
8 | CHRISTIAN DOPPLER TCAD | address | 245807 | 1% | 80% | 8 |
9 | HOT CARRIER INJECTION HCI | authKW | 228103 | 2% | 42% | 14 |
10 | HOLE TRAPPING | authKW | 216618 | 2% | 30% | 19 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 12690 | 72% | 0% | 576 |
2 | Physics, Applied | 7787 | 63% | 0% | 498 |
3 | Computer Science, Hardware & Architecture | 4257 | 13% | 0% | 105 |
4 | Nanoscience & Nanotechnology | 3550 | 23% | 0% | 183 |
5 | Computer Science, Software Engineering | 77 | 3% | 0% | 22 |
6 | Optics | 23 | 4% | 0% | 30 |
7 | Physics, Multidisciplinary | 18 | 4% | 0% | 32 |
8 | Computer Science, Theory & Methods | 12 | 2% | 0% | 14 |
9 | Computer Science, Interdisciplinary Applications | 10 | 2% | 0% | 13 |
10 | Physics, Condensed Matter | 8 | 4% | 0% | 32 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CHRISTIAN DOPPLER TCAD | 245807 | 1% | 80% | 8 |
2 | TU PT | 153631 | 1% | 100% | 4 |
3 | RDO PT | 115224 | 0% | 100% | 3 |
4 | DEVICE RELIABIL ELECT CHARACTERIZAT GRP | 76816 | 0% | 100% | 2 |
5 | RELIABIL GRP | 68276 | 1% | 44% | 4 |
6 | CHRISTIAN DOPPLER TCAD MICROELECT | 55861 | 1% | 36% | 4 |
7 | WIDE BANDG SEMICOND MAT DEVICES | 43638 | 1% | 23% | 5 |
8 | ALLIANCE CROLLES2 | 38408 | 0% | 100% | 1 |
9 | ANALOG ENGN OPERAT ORG | 38408 | 0% | 100% | 1 |
10 | ANALOG PASS MEMORY | 38408 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 147182 | 8% | 6% | 64 |
2 | MICROELECTRONICS RELIABILITY | 96758 | 17% | 2% | 132 |
3 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 28938 | 13% | 1% | 107 |
4 | IEEE ELECTRON DEVICE LETTERS | 25922 | 10% | 1% | 78 |
5 | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 8228 | 3% | 1% | 27 |
6 | ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS | 4103 | 1% | 1% | 9 |
7 | IEEE DESIGN & TEST | 3857 | 1% | 3% | 4 |
8 | ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS | 3669 | 1% | 2% | 5 |
9 | JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS | 3550 | 1% | 1% | 10 |
10 | MICROELECTRONIC ENGINEERING | 3367 | 4% | 0% | 30 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MANIC, I , DANKOVIC, D , PRIJIC, A , PRIJIC, Z , STOJADINOVIC, N , (2014) MEASUREMENT OF NBTI DEGRADATION IN P-CHANNEL POWER VDMOSFETS.INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS. VOL. 44. ISSUE 4. P. 280 -287 | 29 | 88% | 0 |
2 | GOEL, N , JOSHI, K , MUKHOPADHYAY, S , NANAWARE, N , MAHAPATRA, S , (2014) A COMPREHENSIVE MODELING FRAMEWORK FOR GATE STACK PROCESS DEPENDENCE OF DC AND AC NBTI IN SION AND HKMG P-MOSFETS.MICROELECTRONICS RELIABILITY. VOL. 54. ISSUE 3. P. 491-519 | 21 | 100% | 7 |
3 | DANKOVIC, D , STOJADINOVIC, N , PRIJIC, Z , MANIC, I , DAVIDOVIC, V , PRIJIC, A , DJORIC-VELJKOVIC, S , GOLUBOVIC, S , (2015) ANALYSIS OF RECOVERABLE AND PERMANENT COMPONENTS OF THRESHOLD VOLTAGE SHIFT IN NBT STRESSED P-CHANNEL POWER VDMOSFET.CHINESE PHYSICS B. VOL. 24. ISSUE 10. P. - | 22 | 81% | 0 |
4 | ANG, DS , WANG, S , DU, GA , HU, YZ , (2008) A CONSISTENT DEEP-LEVEL HOLE TRAPPING MODEL FOR NEGATIVE BIAS TEMPERATURE INSTABILITY.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 8. ISSUE 1. P. 22 -34 | 23 | 85% | 25 |
5 | STATHIS, JH , ZAFAR, S , (2006) THE NEGATIVE BIAS TEMPERATURE INSTABILITY IN MOS DEVICES: A REVIEW.MICROELECTRONICS RELIABILITY. VOL. 46. ISSUE 2-4. P. 270 -286 | 29 | 57% | 178 |
6 | DANKOVIC, D , MANIC, I , PRIJIC, A , DJORIC-VELJKOVIC, S , DAVIDOVIC, V , STOJADINOVIC, N , PRIJIC, Z , GOLUBOVIC, S , (2015) NEGATIVE BIAS TEMPERATURE INSTABILITY IN P-CHANNEL POWER VDMOSFETS: RECOVERABLE VERSUS PERMANENT DEGRADATION.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 30. ISSUE 10. P. - | 21 | 81% | 0 |
7 | DANKOVIC, D , MANIC, I , DAVIDOVIC, V , PRIJIC, A , MARJANOVIC, M , ILIC, A , PRIJIC, Z , STOJADINOVIC, ND , (2016) ON THE RECOVERABLE AND PERMANENT COMPONENTS OF NBTI IN P-CHANNEL POWER VDMOSFETS.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 16. ISSUE 4. P. 522 -531 | 25 | 66% | 0 |
8 | TAHI, H , CHENOUF, A , DJEZZAR, B , BENABDELMOUMENE, A , (2016) ON THE CIRCUIT-LEVEL RELIABILITY DEGRADATION DUE TO AC NBTI STRESS.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 16. ISSUE 3. P. 290 -297 | 17 | 94% | 0 |
9 | MA, JG , ZHANG, JF , JI, ZG , BENBAKHTI, B , ZHANG, WD , ZHENG, XF , MITARD, J , KACZER, B , GROESENEKEN, G , HALL, S , ET AL (2014) CHARACTERIZATION OF NEGATIVE-BIAS TEMPERATURE INSTABILITY OF GE MOSFETS WITH GEO2/AL2O3 STACK.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 5. P. 1307-1315 | 25 | 66% | 2 |
10 | ANG, DS , GU, CJ , TUNG, ZY , BOO, AA , GAO, Y , (2014) EVOLUTION OF OXIDE CHARGE TRAPPING UNDER BIAS TEMPERATURE STRESSING.MICROELECTRONICS RELIABILITY. VOL. 54. ISSUE 4. P. 663 -681 | 27 | 60% | 3 |
Classes with closest relation at Level 1 |