Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
6002 | 1545 | 18.2 | 62% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
474 | 2 | FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI | 15884 |
6002 | 1 | BORON PENETRATION//NITRIDED OXIDE//OXYNITRIDATION | 1545 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | BORON PENETRATION | authKW | 502173 | 2% | 71% | 36 |
2 | NITRIDED OXIDE | authKW | 133581 | 1% | 52% | 13 |
3 | OXYNITRIDATION | authKW | 106709 | 1% | 60% | 9 |
4 | SI OXYNITRIDE | authKW | 88927 | 0% | 75% | 6 |
5 | OXYNITRIDE | authKW | 84754 | 3% | 10% | 44 |
6 | REMOTE PLASMA NITRIDATION RPN | authKW | 82341 | 0% | 83% | 5 |
7 | HOT ELECTRON HARDNESS | authKW | 59287 | 0% | 100% | 3 |
8 | POST NITRIDATION ANNEALING | authKW | 59287 | 0% | 100% | 3 |
9 | REOXIDIZED NITRIDED OXIDE | authKW | 59287 | 0% | 100% | 3 |
10 | STORAGE DIELECTRIC | authKW | 59287 | 0% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 15844 | 64% | 0% | 989 |
2 | Materials Science, Coatings & Films | 8823 | 17% | 0% | 270 |
3 | Engineering, Electrical & Electronic | 5803 | 37% | 0% | 567 |
4 | Physics, Condensed Matter | 1394 | 17% | 0% | 269 |
5 | Electrochemistry | 1063 | 8% | 0% | 117 |
6 | Nanoscience & Nanotechnology | 705 | 8% | 0% | 125 |
7 | Materials Science, Multidisciplinary | 235 | 12% | 0% | 186 |
8 | Materials Science, Ceramics | 124 | 2% | 0% | 33 |
9 | Nuclear Science & Technology | 63 | 3% | 0% | 41 |
10 | Chemistry, Physical | 20 | 6% | 0% | 92 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | DIFFUS | 54720 | 0% | 46% | 6 |
2 | SOFTWARE ADV MAT PROC | 39525 | 0% | 100% | 2 |
3 | LEMEAMED | 25405 | 0% | 43% | 3 |
4 | PHYS CHEM SUR E INTER E | 25405 | 0% | 43% | 3 |
5 | ADV ULSI PROC ENGN 4 | 19762 | 0% | 100% | 1 |
6 | AKIRUNI TECHNOL | 19762 | 0% | 100% | 1 |
7 | AUSTIN LOG TECHNOL DEV | 19762 | 0% | 100% | 1 |
8 | BEREICH SONDERFOR FESTKORPERELEKTR 56 | 19762 | 0% | 100% | 1 |
9 | CNRS LP 7251 | 19762 | 0% | 100% | 1 |
10 | DFAE LCMM | 19762 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE ELECTRON DEVICE LETTERS | 42950 | 9% | 2% | 140 |
2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 16800 | 7% | 1% | 114 |
3 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 8737 | 8% | 0% | 116 |
4 | SOLID-STATE ELECTRONICS | 7878 | 4% | 1% | 63 |
5 | APPLIED PHYSICS LETTERS | 5325 | 11% | 0% | 175 |
6 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 4956 | 6% | 0% | 89 |
7 | JOURNAL OF APPLIED PHYSICS | 3533 | 9% | 0% | 141 |
8 | MICROELECTRONICS RELIABILITY | 3055 | 2% | 0% | 33 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2893 | 3% | 0% | 50 |
10 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2635 | 3% | 0% | 44 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BORON PENETRATION | 502173 | 2% | 71% | 36 | Search BORON+PENETRATION | Search BORON+PENETRATION |
2 | NITRIDED OXIDE | 133581 | 1% | 52% | 13 | Search NITRIDED+OXIDE | Search NITRIDED+OXIDE |
3 | OXYNITRIDATION | 106709 | 1% | 60% | 9 | Search OXYNITRIDATION | Search OXYNITRIDATION |
4 | SI OXYNITRIDE | 88927 | 0% | 75% | 6 | Search SI+OXYNITRIDE | Search SI+OXYNITRIDE |
5 | OXYNITRIDE | 84754 | 3% | 10% | 44 | Search OXYNITRIDE | Search OXYNITRIDE |
6 | REMOTE PLASMA NITRIDATION RPN | 82341 | 0% | 83% | 5 | Search REMOTE+PLASMA+NITRIDATION+RPN | Search REMOTE+PLASMA+NITRIDATION+RPN |
7 | HOT ELECTRON HARDNESS | 59287 | 0% | 100% | 3 | Search HOT+ELECTRON+HARDNESS | Search HOT+ELECTRON+HARDNESS |
8 | POST NITRIDATION ANNEALING | 59287 | 0% | 100% | 3 | Search POST+NITRIDATION+ANNEALING | Search POST+NITRIDATION+ANNEALING |
9 | REOXIDIZED NITRIDED OXIDE | 59287 | 0% | 100% | 3 | Search REOXIDIZED+NITRIDED+OXIDE | Search REOXIDIZED+NITRIDED+OXIDE |
10 | STORAGE DIELECTRIC | 59287 | 0% | 100% | 3 | Search STORAGE+DIELECTRIC | Search STORAGE+DIELECTRIC |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GUSEV, EP , LU, HC , GARFUNKEL, EL , GUSTAFSSON, T , GREEN, ML , (1999) GROWTH AND CHARACTERIZATION OF ULTRATHIN NITRIDED SILICON OXIDE FILMS.IBM JOURNAL OF RESEARCH AND DEVELOPMENT. VOL. 43. ISSUE 3. P. 265 -286 | 73 | 58% | 137 |
2 | DOUGLAS, MA , HATTANGADY, S , EASON, K , (2000) DEPTH PROFILE ANALYSIS OF ULTRATHIN SILICON OXYNITRIDE FILMS BY TOF-SIMS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 147. ISSUE 5. P. 1893 -1902 | 39 | 87% | 13 |
3 | DANG, SS , TAKOUDIS, CG , (2000) RATE-LIMITING STEPS DURING NITROGEN INCORPORATION IN FURNACE-GROWN SILICON OXYNITRIDES: EFFECTS ON WAFER-TO-WAFER UNIFORMITY.THIN SOLID FILMS. VOL. 366. ISSUE 1-2. P. 225-231 | 37 | 86% | 0 |
4 | KRZEMINSKI, CD , (2013) MODELLING OF SILICON OXYNITRIDATION BY NITROUS OXIDE USING THE REACTION RATE APPROACH.JOURNAL OF APPLIED PHYSICS. VOL. 114. ISSUE 22. P. - | 29 | 76% | 0 |
5 | BAUMVOL, IJR , (1999) ATOMIC TRANSPORT DURING GROWTH OF ULTRATHIN DIELECTRICS ON SILICON.SURFACE SCIENCE REPORTS. VOL. 36. ISSUE 1-8. P. 1 -166 | 65 | 43% | 95 |
6 | ELLIS, KA , BUHRMAN, RA , (1999) NITROUS OXIDE (N2O) PROCESSING FOR SILICON OXYNITRIDE GATE DIELECTRICS.IBM JOURNAL OF RESEARCH AND DEVELOPMENT. VOL. 43. ISSUE 3. P. 287 -300 | 29 | 97% | 33 |
7 | GUSEV, EP , LU, HC , GARFUNKEL, E , GUSTAFSSON, T , GREEN, ML , BRASEN, D , LENNARD, WN , (1998) NITROGEN ENGINEERING OF ULTRATHIN OXYNITRIDES BY A THERMAL NO/O-2/NO PROCESS.JOURNAL OF APPLIED PHYSICS. VOL. 84. ISSUE 5. P. 2980 -2982 | 29 | 91% | 37 |
8 | CHENG, HC , HER, JK , WU, CY , (1990) INFLUENCES OF ATMOSPHERIC-PRESSURE REOXIDATION ON THE ULTRATHIN OXIDE-FILMS NITRIDED IN ATMOSPHERIC NH3 AMBIENT.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 137. ISSUE 9. P. 2816-2819 | 38 | 100% | 3 |
9 | TEMPLE-BOYER, P , OLIVIE, F , KASSMI, K , SCHEID, E , SARRABAYROUSE, G , MARTINEZ, A , (1997) ELECTRICAL CHARACTERISTICS OF THIN SILICA LAYERS NITRIDED BY LPCVD NITROGEN DOPED SILICON.SOLID-STATE ELECTRONICS. VOL. 41. ISSUE 7. P. 951 -955 | 29 | 97% | 0 |
10 | ADAM, LS , BOWEN, C , LAW, ME , (2003) ON IMPLANT-BASED MULTIPLE GATE OXIDE SCHEMES FOR SYSTEM-ON-CHIP INTEGRATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 50. ISSUE 3. P. 589 -600 | 39 | 58% | 6 |
Classes with closest relation at Level 1 |