Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
37271 | 62 | 27.5 | 49% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
474 | 2 | FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI | 15884 |
37271 | 1 | GRAZING X RAY REFLECTOMETRY//ANOMALOUS DISPERSION EFFECT//BI POLAR DESIGN | 62 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GRAZING X RAY REFLECTOMETRY | authKW | 656680 | 3% | 67% | 2 |
2 | ANOMALOUS DISPERSION EFFECT | authKW | 492511 | 2% | 100% | 1 |
3 | BI POLAR DESIGN | authKW | 492511 | 2% | 100% | 1 |
4 | DIRECT STRUCTURE DEPTH PROFILING | authKW | 492511 | 2% | 100% | 1 |
5 | DRN DEC | address | 492511 | 2% | 100% | 1 |
6 | ENERGY DIFFERENTIAL ANOMALOUS SMALL ANGLE SCATTERING METHOD | authKW | 492511 | 2% | 100% | 1 |
7 | NI PD THIN FILM | authKW | 492511 | 2% | 100% | 1 |
8 | OXIDATION HUMIDITY | authKW | 492511 | 2% | 100% | 1 |
9 | PD AG BILAYER | authKW | 492511 | 2% | 100% | 1 |
10 | SAMPLE CURRENT | authKW | 492511 | 2% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 375 | 50% | 0% | 31 |
2 | Materials Science, Coatings & Films | 365 | 18% | 0% | 11 |
3 | Materials Science, Multidisciplinary | 82 | 27% | 0% | 17 |
4 | Engineering, Electrical & Electronic | 55 | 19% | 0% | 12 |
5 | Crystallography | 48 | 8% | 0% | 5 |
6 | Metallurgy & Metallurgical Engineering | 43 | 10% | 0% | 6 |
7 | Nuclear Science & Technology | 39 | 8% | 0% | 5 |
8 | Instruments & Instrumentation | 20 | 6% | 0% | 4 |
9 | Nanoscience & Nanotechnology | 17 | 6% | 0% | 4 |
10 | Materials Science, Ceramics | 13 | 3% | 0% | 2 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | DRN DEC | 492511 | 2% | 100% | 1 |
2 | CERAM NUCL | 246255 | 2% | 50% | 1 |
3 | MICROSYST INTEGRAT S | 130359 | 10% | 4% | 6 |
4 | PL MATH OPERAT GRP | 123124 | 3% | 13% | 2 |
5 | TELECOMMUN ENERGY S | 70753 | 8% | 3% | 5 |
6 | URA 2090 | 28969 | 2% | 6% | 1 |
7 | RMCS | 24622 | 3% | 3% | 2 |
8 | FUNCT MAT S | 8639 | 2% | 2% | 1 |
9 | ADV MAT PROC | 3172 | 5% | 0% | 3 |
10 | LETAM | 2158 | 2% | 0% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SPRINGER TRACTS IN MODERN PHYSICS | 4066 | 3% | 0% | 2 |
2 | MATERIALS TRANSACTIONS JIM | 3471 | 6% | 0% | 4 |
3 | TEXTURES AND MICROSTRUCTURES | 1557 | 2% | 0% | 1 |
4 | NEC RESEARCH & DEVELOPMENT | 1130 | 2% | 0% | 1 |
5 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 866 | 8% | 0% | 5 |
6 | JOURNAL OF APPLIED CRYSTALLOGRAPHY | 783 | 5% | 0% | 3 |
7 | JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES | 563 | 3% | 0% | 2 |
8 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 469 | 6% | 0% | 4 |
9 | JOURNAL OF ELECTRONIC MATERIALS | 453 | 5% | 0% | 3 |
10 | POWDER DIFFRACTION | 424 | 2% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | YAMADA, H , (2008) EFFECTS OF N AND F PASSIVATION ON THE RELIABILITY AND INTERFACE STRUCTURE OF 700 DEGREES C GROWN ULTRATHIN SILICON OXIDE/SI(100) GATE FILMS.JOURNAL OF APPLIED PHYSICS. VOL. 103. ISSUE 1. P. - | 30 | 54% | 0 |
2 | YAMADA, H , (2006) EXCESS SI AND PASSIVATING N AND F ATOMS NEAR THE PYROLYTIC-GAS-PASSIVATED ULTRATHIN SILICON OXIDE FILM/SI(100) INTERFACE.JOURNAL OF APPLIED PHYSICS. VOL. 100. ISSUE 12. P. - | 27 | 47% | 1 |
3 | YAMADA, H , (2006) ADDITIONAL FLUORINE PASSIVATION TO PYROLYTIC-N2O PASSIVATED ULTRATHIN SILICON OXIDE/SI(100) FILMS.JOURNAL OF APPLIED PHYSICS. VOL. 100. ISSUE 3. P. - | 25 | 50% | 3 |
4 | YAMADA, H , (2005) INHIBITION OF EXCESS INTERFACE SI ATOM GENERATION IN 700 DEGREES C-GROWN PYROLYTIC-GAS PASSIVATED ULTRATHIN SILICON OXIDE FILMS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 23. ISSUE 4. P. 599 -604 | 22 | 48% | 5 |
5 | YAMADA, H , (2008) FUNDAMENTAL RELIABILITY OF 1.5-NM-THICK SILICON OXIDE GATE FILMS GROWN AT 150 DEGREES C BY MODIFIED REACTIVE ION BEAM DEPOSITION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 26. ISSUE 1. P. 36 -43 | 23 | 42% | 0 |
6 | YAMADA, H , (2004) CORRELATION BETWEEN DENSITY AND OXIDATION TEMPERATURE FOR PYROLYTIC-GAS PASSIVATED ULTRATHIN SILICON OXIDE FILMS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 22. ISSUE 1. P. 82-87 | 20 | 49% | 8 |
7 | YAMADA, H , (2003) DENSITY AND NITROGEN CONTENT OF ULTRATHIN SILICON OXIDE GATE FILMS GROWN USING IN SITU PYROLYTIC-GAS PASSIVATION.JOURNAL OF APPLIED PHYSICS. VOL. 93. ISSUE 8. P. 4902 -4908 | 19 | 49% | 6 |
8 | YAMADA, H , (2002) CHANGES IN THE DENSITY OF ULTRATHIN SILICON OXIDE FILMS RELATED TO EXCESS SI ATOMS NEAR THE OXIDE-SI(100) INTERFACE.JOURNAL OF APPLIED PHYSICS. VOL. 91. ISSUE 3. P. 1108 -1112 | 16 | 59% | 9 |
9 | YAMADA, H , (2007) 1.5-NM-THICK SILICON OXIDE GATE FILMS GROWN AT 150 DEGREES C USING MODIFIED REACTIVE ION BEAM DEPOSITION WITH PYROLYTIC-GAS PASSIVATION.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 25. ISSUE 2. P. 340 -346 | 22 | 34% | 2 |
10 | YAMADA, H , (2001) CORRELATION BETWEEN EXCESS SI ATOMS NEAR THE ULTRATHIN SILICON OXIDE-SI(100) INTERFACE AND OXIDATION TEMPERATURE.JOURNAL OF ELECTRONIC MATERIALS. VOL. 30. ISSUE 8. P. 1021 -1027 | 15 | 58% | 5 |
Classes with closest relation at Level 1 |