Class information for:
Level 1: ANTIFUSE//MULTITIME PROGRAMMABLE MTP//ONE TIME PROGRAMMABLE MEMORY

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
30953 160 14.3 47%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
30953 1                   ANTIFUSE//MULTITIME PROGRAMMABLE MTP//ONE TIME PROGRAMMABLE MEMORY 160

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ANTIFUSE authKW 1818642 11% 53% 18
2 MULTITIME PROGRAMMABLE MTP authKW 954235 3% 100% 5
3 ONE TIME PROGRAMMABLE MEMORY authKW 795194 3% 83% 5
4 EFUSE authKW 763388 3% 100% 4
5 EMBEDDED NONVOLATILE MEMORY ENVM authKW 572541 2% 100% 3
6 LOGIC NONVOLATILE MEMORY NVM authKW 508922 3% 67% 4
7 EMBEDDED FLASH authKW 436218 3% 57% 4
8 ONE TIME PROGRAMMABLE OTP authKW 433738 3% 45% 5
9 SELECT GATE SG authKW 429404 2% 75% 3
10 STANDARD LOGIC PROCESS authKW 429404 2% 75% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 3038 79% 0% 126
2 Physics, Applied 480 36% 0% 58
3 Nanoscience & Nanotechnology 31 6% 0% 9
4 Materials Science, Coatings & Films 13 3% 0% 4
5 Computer Science, Hardware & Architecture 13 2% 0% 3
6 Metallurgy & Metallurgical Engineering 11 4% 0% 6
7 Physics, Condensed Matter 9 6% 0% 10
8 Electrochemistry 3 2% 0% 3
9 Materials Science, Multidisciplinary 2 6% 0% 10
10 Telecommunications 1 1% 0% 2

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 PLATFORM TECHNOL DEV TEAM 381694 1% 100% 2
2 CUSTOM FOUNDRY 190847 1% 100% 1
3 ER CAIANIELLO INFN 190847 1% 100% 1
4 FAB12 190847 1% 100% 1
5 INTERDIPARTIMENTALE RIC NANO MATES 190847 1% 100% 1
6 NON VOLATILE MEMORY LIB 190847 1% 100% 1
7 NVM DEVICE 190847 1% 100% 1
8 NVM SOLUT GRP 190847 1% 100% 1
9 CORP SYST LSI 95422 1% 50% 1
10 IMAGE DEV GRP 95422 1% 50% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE ELECTRON DEVICE LETTERS 35720 26% 0% 41
2 ELECTRONIC ENGINEERING 5651 1% 1% 2
3 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 5626 3% 1% 4
4 IEEE TRANSACTIONS ON ELECTRON DEVICES 5537 13% 0% 21
5 ISSCC DIGEST OF TECHNICAL PAPERS 4335 1% 2% 1
6 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 2851 3% 0% 4
7 IEEE JOURNAL OF SOLID-STATE CIRCUITS 2305 6% 0% 10
8 IEICE TRANSACTIONS ON ELECTRONICS 1552 4% 0% 7
9 JOURNAL OF CENTRAL SOUTH UNIVERSITY 1242 3% 0% 4
10 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 1052 1% 1% 1

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 ANTIFUSE 1818642 11% 53% 18 Search ANTIFUSE Search ANTIFUSE
2 MULTITIME PROGRAMMABLE MTP 954235 3% 100% 5 Search MULTITIME+PROGRAMMABLE+MTP Search MULTITIME+PROGRAMMABLE+MTP
3 ONE TIME PROGRAMMABLE MEMORY 795194 3% 83% 5 Search ONE+TIME+PROGRAMMABLE+MEMORY Search ONE+TIME+PROGRAMMABLE+MEMORY
4 EFUSE 763388 3% 100% 4 Search EFUSE Search EFUSE
5 EMBEDDED NONVOLATILE MEMORY ENVM 572541 2% 100% 3 Search EMBEDDED+NONVOLATILE+MEMORY+ENVM Search EMBEDDED+NONVOLATILE+MEMORY+ENVM
6 LOGIC NONVOLATILE MEMORY NVM 508922 3% 67% 4 Search LOGIC+NONVOLATILE+MEMORY+NVM Search LOGIC+NONVOLATILE+MEMORY+NVM
7 EMBEDDED FLASH 436218 3% 57% 4 Search EMBEDDED+FLASH Search EMBEDDED+FLASH
8 ONE TIME PROGRAMMABLE OTP 433738 3% 45% 5 Search ONE+TIME+PROGRAMMABLE+OTP Search ONE+TIME+PROGRAMMABLE+OTP
9 SELECT GATE SG 429404 2% 75% 3 Search SELECT+GATE+SG Search SELECT+GATE+SG
10 STANDARD LOGIC PROCESS 429404 2% 75% 3 Search STANDARD+LOGIC+PROCESS Search STANDARD+LOGIC+PROCESS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 MILANI, L , TORRICELLI, F , KOVACS-VAJNA, ZM , (2015) SINGLE-POLY-EEPROM CELL IN STANDARD CMOS PROCESS FOR MEDIUM-DENSITY APPLICATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 10. P. 3237 -3243 15 88% 3
2 PARK, SK , CHOI, KI , KIM, NY , (2016) IMPROVED PERFORMANCE OF NOVEL VERTICAL ASSIST OPERATING SELECT GATE LATERAL COUPLING CELL FOR LOGIC NONVOLATILE MEMORY.IEEE ELECTRON DEVICE LETTERS. VOL. 37. ISSUE 4. P. 412 -415 9 100% 0
3 LI, C , LI, JC , SHANG, J , LI, WX , XU, SQ , (2015) MULTITIME PROGRAMMABLE MEMORY CELL WITH IMPROVED MOS CAPACITOR IN STANDARD CMOS PROCESS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 8. P. 2517 -2523 13 68% 1
4 JUNG, SW , NA, BS , YOU, IK , KOO, JB , YANG, BD , OH, JM , (2014) INKJET-PRINTED ORGANIC THIN-FILM TRANSISTOR AND ANTIFUSE CAPACITOR FOR FLEXIBLE ONE-TIME PROGRAMMABLE MEMORY APPLICATIONS.JOURNAL OF THE KOREAN PHYSICAL SOCIETY. VOL. 64. ISSUE 1. P. 74-78 13 65% 1
5 TORRICELLI, F , MILANI, L , RICHELLI, A , COLALONGO, L , PASOTTI, M , KOVACS-VAJNA, ZM , (2013) HALF-MOS SINGLE-POLY EEPROM CELL IN STANDARD CMOS PROCESS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 60. ISSUE 6. P. 1892-1897 10 83% 7
6 HUANG, CE , TSENG, YH , KUO, CH , CHIH, YD , KING, YC , LIN, CJ , (2010) MULTILEVEL ANTIFUSE CELLS WITH PROGRAMMABLE CONTACT IN PURE 90 NM LOGIC PROCESS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 49. ISSUE 1. P. - 11 85% 0
7 CHEN, YZ , YUAN, JE , PENG, PC , HSIAO, WY , KING, YC , LIN, CJ , (2016) A HIGH DENSITY FINFET ONE-TIME PROGRAMMABLE CELL WITH NEW INTRA-FIN CELL ISOLATION FOR ADVANCED SYSTEM ON CHIP APPLICATIONS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 4. P. - 11 65% 0
8 HSIAO, WY , PENG, PC , CHANG, TS , CHIH, YD , TSAI, WC , CHANG, MF , CHIEN, TF , KING, YC , LIN, CJ , (2015) A NEW HIGH-DENSITY TWIN-GATE ISOLATION ONE-TIME PROGRAMMABLE MEMORY CELL IN PURE 28-NM CMOS LOGIC PROCESS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 1. P. 121 -127 10 71% 0
9 JUNG, SW , NA, BS , PARK, CW , KOO, JB , (2014) LOW-VOLTAGE-OPERATED ORGANIC ONE-TIME PROGRAMMABLE MEMORY USING PRINTED ORGANIC THIN-FILM TRANSISTORS AND ANTIFUSE CAPACITORS.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. VOL. 14. ISSUE 11. P. 8167 -8170 11 61% 2
10 HE, TN , ZHANG, FC , BHUNIA, S , FENG, PXL , (2015) SILICON CARBIDE (SIC) NANOELECTROMECHANICAL ANTIFUSE FOR ULTRALOW-POWER ONE-TIME-PROGRAMMABLE (OTP) FPGA INTERCONNECTS.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. VOL. 3. ISSUE 4. P. 323 -335 11 58% 0

Classes with closest relation at Level 1


Rank Class id link
1 6607 SONOS//FLASH MEMORY//NAND FLASH MEMORY
2 13737 CHARGE PUMP//SWITCHED CAPACITOR SC CONVERTER//SWITCHED CAPACITOR CONVERTER
3 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
4 26940 SOURCE GATED TRANSISTOR SGT//SOURCE GATED TRANSISTOR//ELE OMAGNET ELECT DEVICES
5 17275 MARCH TEST//MEMORY TESTING//BUILT IN SELF REPAIR BISR
6 21091 HARDWARE SECURITY//PHYSICAL UNCLONABLE FUNCTION//HARDWARE TROJAN
7 10953 REBIC//HEAVILY DOPED POLYSILICON RESISTOR//MELTING SEGREGATION MODEL
8 26171 IBM SYST TECHNOL GRP//IBM JOURNAL OF RESEARCH AND DEVELOPMENT//390
9 33465 VIBRATORY STRESS RELIEF//VIBRATION STRESS RELIEF//VIBRATORY WELD CONDITIONING
10 12775 IEEE JOURNAL OF SOLID-STATE CIRCUITS//EMBEDDED DRAM//DRAM

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