Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
3635 | 1940 | 24.3 | 64% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
474 | 2 | FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI | 15884 |
3635 | 1 | SI OXIDATION//SILICON OXIDATION//SIO2 SI INTERFACE | 1940 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SI OXIDATION | authKW | 158691 | 1% | 92% | 11 |
2 | SILICON OXIDATION | authKW | 138552 | 1% | 46% | 19 |
3 | SIO2 SI INTERFACE | authKW | 138469 | 1% | 40% | 22 |
4 | LAYER BY LAYER OXIDATION | authKW | 121058 | 1% | 77% | 10 |
5 | INTERFACIAL SILICON EMISSION | authKW | 94429 | 0% | 100% | 6 |
6 | SILICON OXIDE | authKW | 81067 | 4% | 7% | 77 |
7 | TRANSLATIONAL KINETIC ENERGY | authKW | 50360 | 0% | 80% | 4 |
8 | OXYGEN MOLECULAR BEAM | authKW | 47214 | 0% | 100% | 3 |
9 | SI THERMAL OXIDATION | authKW | 47214 | 0% | 100% | 3 |
10 | SI001 OXIDATION | authKW | 47214 | 0% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 13218 | 53% | 0% | 1025 |
2 | Materials Science, Coatings & Films | 13114 | 19% | 0% | 368 |
3 | Physics, Condensed Matter | 6701 | 32% | 0% | 615 |
4 | Electrochemistry | 1278 | 7% | 0% | 144 |
5 | Chemistry, Physical | 940 | 17% | 0% | 335 |
6 | Materials Science, Multidisciplinary | 532 | 15% | 0% | 286 |
7 | Nanoscience & Nanotechnology | 397 | 6% | 0% | 112 |
8 | Engineering, Electrical & Electronic | 346 | 10% | 0% | 201 |
9 | Physics, Multidisciplinary | 148 | 6% | 0% | 112 |
10 | Microscopy | 51 | 1% | 0% | 13 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | THEORIE PHENOMENES PHYS ITP | 20983 | 0% | 67% | 2 |
2 | PPH ECUBLENS | 19527 | 0% | 21% | 6 |
3 | PLASMANT GRP | 18991 | 0% | 15% | 8 |
4 | JOINT ATOM TECHNOL | 18576 | 1% | 7% | 18 |
5 | SHIGA TECHNOL | 17981 | 0% | 29% | 4 |
6 | 186031Z | 15738 | 0% | 100% | 1 |
7 | ABT HALBLEITER | 15738 | 0% | 100% | 1 |
8 | AD T NANOSTRUCT NANODEVICES CRAN | 15738 | 0% | 100% | 1 |
9 | ADV ISI TECHNOL | 15738 | 0% | 100% | 1 |
10 | ADV SIMULAT THEORET NEUROSCI | 15738 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 9978 | 7% | 0% | 139 |
2 | SURFACE SCIENCE | 9115 | 6% | 0% | 126 |
3 | APPLIED SURFACE SCIENCE | 6101 | 6% | 0% | 118 |
4 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 5588 | 5% | 0% | 106 |
5 | JOURNAL OF APPLIED PHYSICS | 3364 | 8% | 0% | 155 |
6 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 3333 | 3% | 0% | 51 |
7 | APPLIED PHYSICS LETTERS | 3283 | 8% | 0% | 156 |
8 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 3278 | 3% | 0% | 55 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2101 | 2% | 0% | 48 |
10 | PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1931 | 1% | 1% | 20 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SI OXIDATION | 158691 | 1% | 92% | 11 | Search SI+OXIDATION | Search SI+OXIDATION |
2 | SILICON OXIDATION | 138552 | 1% | 46% | 19 | Search SILICON+OXIDATION | Search SILICON+OXIDATION |
3 | SIO2 SI INTERFACE | 138469 | 1% | 40% | 22 | Search SIO2+SI+INTERFACE | Search SIO2+SI+INTERFACE |
4 | LAYER BY LAYER OXIDATION | 121058 | 1% | 77% | 10 | Search LAYER+BY+LAYER+OXIDATION | Search LAYER+BY+LAYER+OXIDATION |
5 | INTERFACIAL SILICON EMISSION | 94429 | 0% | 100% | 6 | Search INTERFACIAL+SILICON+EMISSION | Search INTERFACIAL+SILICON+EMISSION |
6 | SILICON OXIDE | 81067 | 4% | 7% | 77 | Search SILICON+OXIDE | Search SILICON+OXIDE |
7 | TRANSLATIONAL KINETIC ENERGY | 50360 | 0% | 80% | 4 | Search TRANSLATIONAL+KINETIC+ENERGY | Search TRANSLATIONAL+KINETIC+ENERGY |
8 | OXYGEN MOLECULAR BEAM | 47214 | 0% | 100% | 3 | Search OXYGEN+MOLECULAR+BEAM | Search OXYGEN+MOLECULAR+BEAM |
9 | SI THERMAL OXIDATION | 47214 | 0% | 100% | 3 | Search SI+THERMAL+OXIDATION | Search SI+THERMAL+OXIDATION |
10 | SI001 OXIDATION | 47214 | 0% | 100% | 3 | Search SI001+OXIDATION | Search SI001+OXIDATION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | OGAWA, S , TAKAKUWA, Y , (2006) RATE-LIMITING REACTIONS OF GROWTH AND DECOMPOSITION KINETICS OF VERY THIN OXIDES ON SI(001) SURFACES STUDIED BY REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION COMBINED WITH AUGER ELECTRON SPECTROSCOPY.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 45. ISSUE 9A. P. 7063-7079 | 61 | 77% | 10 |
2 | ENTA, Y , OSANAI, S , OGASAWARA, T , (2017) ACTIVATION ENERGY OF THERMAL DESORPTION OF SILICON OXIDE LAYERS ON SILICON SUBSTRATES.SURFACE SCIENCE. VOL. 656. ISSUE . P. 96 -100 | 34 | 100% | 0 |
3 | YOSHIGOE, A , TERAOKA, Y , (2010) IMMEDIATE PRODUCT AFTER EXPOSING SI(111)-7X7 SURFACE TO O-2 AT 300 K.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 49. ISSUE 11. P. - | 49 | 77% | 2 |
4 | PAMUNGKAS, MA , JOE, M , KIM, BH , LEE, KR , (2011) REACTIVE MOLECULAR DYNAMICS SIMULATION OF EARLY STAGE OF DRY OXIDATION OF SI (100) SURFACE.JOURNAL OF APPLIED PHYSICS. VOL. 110. ISSUE 5. P. - | 42 | 84% | 6 |
5 | OGAWA, S , YOSHIGOE, A , ISHIDZUKA, S , TERAOKA, Y , TAKAKUWA, Y , (2007) SI(001) SURFACE LAYER-BY-LAYER OXIDATION STUDIED BY REAL-TIME PHOTOELECTRON SPECTROSCOPY USING SYNCHROTRON RADIATION.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 46. ISSUE 5B. P. 3244 -3254 | 47 | 76% | 7 |
6 | HATTORI, T , (1995) CHEMICAL STRUCTURES OF THE SIO2/SI INTERFACE.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 20. ISSUE 4. P. 339 -382 | 89 | 53% | 74 |
7 | WOLTERS, DR , ZEGERSVANDUIJNHOVEN, ATA , (1992) SILICON OXIDATION AND FIXED OXIDE CHARGE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 139. ISSUE 1. P. 241 -249 | 59 | 88% | 15 |
8 | GUSEV, EP , LU, HC , GUSTAFSSON, T , GARFUNKEL, E , (1995) GROWTH-MECHANISM OF THIN SILICON-OXIDE FILMS ON SI(100) STUDIED BY MEDIUM-ENERGY ION-SCATTERING.PHYSICAL REVIEW B. VOL. 52. ISSUE 3. P. 1759 -1775 | 59 | 64% | 144 |
9 | FINK, CK , NAKAMURA, K , ICHIMURA, S , JENKINS, SJ , (2009) SILICON OXIDATION BY OZONE.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 21. ISSUE 18. P. - | 48 | 58% | 17 |
10 | OGAWA, S , TANG, JY , YOSHIGOE, A , ISHIDZUKA, S , TAKAKUWA, Y , (2016) ENHANCEMENT OF SIO2/SI(001) INTERFACIAL OXIDATION INDUCED BY THERMAL STRAIN DURING RAPID THERMAL OXIDATION.JOURNAL OF CHEMICAL PHYSICS. VOL. 145. ISSUE 11. P. - | 30 | 81% | 0 |
Classes with closest relation at Level 1 |