Class information for:
Level 1: SI SIO2//GE INSULATOR STRUCTURE//MICROWAVE TRANSIENT PHOTOCONDUCTIVITY

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
19608 497 21.6 62%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
19608 1                   SI SIO2//GE INSULATOR STRUCTURE//MICROWAVE TRANSIENT PHOTOCONDUCTIVITY 497

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SI SIO2 authKW 130704 2% 21% 10
2 GE INSULATOR STRUCTURE authKW 122877 0% 100% 2
3 MICROWAVE TRANSIENT PHOTOCONDUCTIVITY authKW 122877 0% 100% 2
4 SI SIO2 INTERFACE authKW 91759 2% 14% 11
5 DEUTERIUM ANNEALING authKW 81916 0% 67% 2
6 ELECTRICAL BIASING authKW 81916 0% 67% 2
7 SID4 authKW 81916 0% 67% 2
8 INTERFACE DEFECT authKW 70209 1% 29% 4
9 111 SI SIO2 INTERFACE authKW 61438 0% 100% 1
10 CHIM PHYS URA 176 address 61438 0% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 3826 56% 0% 278
2 Physics, Condensed Matter 1390 29% 0% 143
3 Engineering, Electrical & Electronic 552 21% 0% 106
4 Materials Science, Coatings & Films 475 7% 0% 37
5 Nanoscience & Nanotechnology 460 11% 0% 55
6 Materials Science, Ceramics 104 3% 0% 16
7 Optics 98 7% 0% 36
8 Materials Science, Multidisciplinary 93 13% 0% 64
9 Electrochemistry 39 3% 0% 15
10 Physics, Multidisciplinary 28 5% 0% 26

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CHIM PHYS URA 176 61438 0% 100% 1
2 CPU TECH TEAM 61438 0% 100% 1
3 ELE ON DEVICE ENGN 61438 0% 100% 1
4 FAB YIELD 12 61438 0% 100% 1
5 IT ADLERSHOF 61438 0% 100% 1
6 NANOSCALE SCIENEC ENGN 61438 0% 100% 1
7 PHYS SOLIDES GRP URA CNRS 17 61438 0% 100% 1
8 TECHNOL DEV PROJECT TEAM 61438 0% 100% 1
9 UPREA EA2654 61438 0% 100% 1
10 IMAGING SOLUT GRP 30718 0% 50% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MICROELECTRONIC ENGINEERING 5790 6% 0% 31
2 APPLIED PHYSICS LETTERS 4086 17% 0% 86
3 JOURNAL OF APPLIED PHYSICS 1391 10% 0% 50
4 MICROELECTRONICS RELIABILITY 1056 2% 0% 11
5 ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE 997 1% 0% 4
6 IEEE ELECTRON DEVICE LETTERS 963 2% 0% 12
7 PHYSICAL REVIEW B 758 9% 0% 47
8 JOURNAL OF NON-CRYSTALLINE SOLIDS 582 3% 0% 15
9 ELECTROCHEMICAL AND SOLID STATE LETTERS 507 1% 0% 6
10 SOLID-STATE ELECTRONICS 490 2% 0% 9

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SI SIO2 130704 2% 21% 10 Search SI+SIO2 Search SI+SIO2
2 GE INSULATOR STRUCTURE 122877 0% 100% 2 Search GE+INSULATOR+STRUCTURE Search GE+INSULATOR+STRUCTURE
3 MICROWAVE TRANSIENT PHOTOCONDUCTIVITY 122877 0% 100% 2 Search MICROWAVE+TRANSIENT+PHOTOCONDUCTIVITY Search MICROWAVE+TRANSIENT+PHOTOCONDUCTIVITY
4 SI SIO2 INTERFACE 91759 2% 14% 11 Search SI+SIO2+INTERFACE Search SI+SIO2+INTERFACE
5 DEUTERIUM ANNEALING 81916 0% 67% 2 Search DEUTERIUM+ANNEALING Search DEUTERIUM+ANNEALING
6 ELECTRICAL BIASING 81916 0% 67% 2 Search ELECTRICAL+BIASING Search ELECTRICAL+BIASING
7 SID4 81916 0% 67% 2 Search SID4 Search SID4
8 INTERFACE DEFECT 70209 1% 29% 4 Search INTERFACE+DEFECT Search INTERFACE+DEFECT
9 111 SI SIO2 INTERFACE 61438 0% 100% 1 Search 111+SI+SIO2+INTERFACE Search 111+SI+SIO2+INTERFACE
10 CMOS CHIP LIFETIME 61438 0% 100% 1 Search CMOS+CHIP+LIFETIME Search CMOS+CHIP+LIFETIME

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 STESMANS, A , AFANAS'EV, VV , KEUNEN, K , (2011) INHERENT SI DANGLING BOND DEFECTS AT THE THERMAL (110)SI/SIO2 INTERFACE.PHYSICAL REVIEW B. VOL. 84. ISSUE 8. P. - 33 60% 10
2 STESMANS, A , (2002) INFLUENCE OF INTERFACE RELAXATION ON PASSIVATION KINETICS IN H-2 OF COORDINATION P-B DEFECTS AT THE (111)SI/SIO2 INTERFACE REVEALED BY ELECTRON SPIN RESONANCE.JOURNAL OF APPLIED PHYSICS. VOL. 92. ISSUE 3. P. 1317 -1328 29 66% 42
3 SOMERS, P , STESMANS, A , SOURIAU, L , AFANAS'EV, VV , (2012) ELECTRON SPIN RESONANCE FEATURES OF THE GE P-B1 DANGLING BOND DEFECT IN CONDENSATION-GROWN (100)SI/SIO2/SI1-XGEX/SIO2 HETEROSTRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 112. ISSUE 7. P. - 35 43% 3
4 STESMANS, A , AFANAS'EV, VV , (1998) ELECTRON SPIN RESONANCE FEATURES OF INTERFACE DEFECTS IN THERMAL (100)SI/SIO2.JOURNAL OF APPLIED PHYSICS. VOL. 83. ISSUE 5. P. 2449 -2457 23 79% 110
5 STESMANS, A , NOUWEN, B , AFANAS'EV, VV , (1998) P-B1 INTERFACE DEFECT IN THERMAL (100)SI/SIO2: SI-29 HYPERFINE INTERACTION.PHYSICAL REVIEW B. VOL. 58. ISSUE 23. P. 15801 -15809 22 79% 84
6 JIVANESCU, M , STESMANS, A , KURSTJENS, R , (2014) FUNCTIONALITY OF THERMALLY HYDROGEN-PASSIVATED INTERFACES OF OXIDIZED CRYSTALLINE ARRAYS OF SI NANOWIRES ON (100) SI.EPL. VOL. 106. ISSUE 6. P. - 18 67% 2
7 MISRA, D , JARWAL, RK , (2002) INTERFACE HARDENING WITH DEUTERIUM IMPLANTATION.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 149. ISSUE 8. P. G446-G450 19 86% 4
8 CHENG, KG , HESS, K , LYDING, JW , (2001) KINETIC STUDY ON REPLACEMENT OF HYDROGEN BY DEUTERIUM AT (100)SI/SIO2 INTERFACES.JOURNAL OF APPLIED PHYSICS. VOL. 90. ISSUE 12. P. 6536-6538 16 94% 5
9 STESMANS, A , (1999) ELECTRON SPIN RESONANCE STUDY OF THE INTERACTION OF HYDROGEN WITH THE (111)SI/SIO2 INTERFACE: PB-HYDROGEN INTERACTION KINETICS.PHYSICA B-CONDENSED MATTER. VOL. 273-4. ISSUE . P. 1015 -1021 20 80% 6
10 VANGORP, G , STESMANS, A , (1992) DIPOLAR INTERACTION BETWEEN [111] PB DEFECTS AT THE (111)SI/SIO2 INTERFACE REVEALED BY ELECTRON-SPIN-RESONANCE.PHYSICAL REVIEW B. VOL. 45. ISSUE 8. P. 4344-4371 26 74% 16

Classes with closest relation at Level 1


Rank Class id link
1 33212 J AN SCI TECHNOL ORG//CYANIDE TREATMENT//DISPLAY TECHNOL DEV GRP
2 2169 IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE
3 34788 CERIUM MAGNETOPLUMBITE//EDS SPECTRA//ENAMEL INSERT RESTORATION
4 14061 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI
5 20471 ELECTRICALLY DETECTED MAGNETIC RESONANCE//EDMR//SPIN DEPENDENT RECOMBINATION
6 17770 VOLTCOULOMETRY//DLTS RESOLUTION//SEMI INSULATING MATERIALS
7 3635 SI OXIDATION//SILICON OXIDATION//SIO2 SI INTERFACE
8 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING
9 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
10 6002 BORON PENETRATION//NITRIDED OXIDE//OXYNITRIDATION

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