Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
11111 | 1007 | 19.0 | 51% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
474 | 2 | FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI | 15884 |
11111 | 1 | TEOS PECVD//TEOS//FEATURE SCALE | 1007 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | TEOS PECVD | authKW | 90965 | 0% | 100% | 3 |
2 | TEOS | authKW | 82491 | 3% | 10% | 28 |
3 | FEATURE SCALE | authKW | 68222 | 0% | 75% | 3 |
4 | EFFECTIVE REACTIVITY MAP | authKW | 60643 | 0% | 100% | 2 |
5 | FLOW SHAPED STEP COVERAGE | authKW | 60643 | 0% | 100% | 2 |
6 | FLOWING LIKE PROFILE | authKW | 60643 | 0% | 100% | 2 |
7 | FOCUS NEW YORK RENSSELAER INTERCONNECT GIGASC | address | 60643 | 0% | 100% | 2 |
8 | LPCVD SILICON NITRIDE | authKW | 60643 | 0% | 100% | 2 |
9 | ORGANOSILICON SOURCE | authKW | 60643 | 0% | 100% | 2 |
10 | PLASMA DEPOSITED OXIDES | authKW | 60643 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Materials Science, Coatings & Films | 24523 | 36% | 0% | 358 |
2 | Physics, Applied | 5423 | 47% | 0% | 477 |
3 | Electrochemistry | 5155 | 19% | 0% | 196 |
4 | Physics, Condensed Matter | 834 | 17% | 0% | 169 |
5 | Materials Science, Multidisciplinary | 830 | 23% | 0% | 227 |
6 | Engineering, Electrical & Electronic | 613 | 17% | 0% | 167 |
7 | Nanoscience & Nanotechnology | 479 | 8% | 0% | 83 |
8 | Materials Science, Ceramics | 377 | 4% | 0% | 42 |
9 | Engineering, Chemical | 35 | 4% | 0% | 40 |
10 | Chemistry, Physical | 8 | 5% | 0% | 55 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | FOCUS NEW YORK RENSSELAER INTERCONNECT GIGASC | 60643 | 0% | 100% | 2 |
2 | FOCUS NEW YORK | 60631 | 1% | 25% | 8 |
3 | BEREICH BAUELEMENTETECHNOL | 45479 | 0% | 50% | 3 |
4 | PLASMAS COUCHES MINCES | 34051 | 1% | 11% | 10 |
5 | ATMEL ES2 | 30322 | 0% | 100% | 1 |
6 | CHAIR PHYS CHEM ELE OCHEM TECHNOL | 30322 | 0% | 100% | 1 |
7 | CNRSENSIGC | 30322 | 0% | 100% | 1 |
8 | ELECT DEVICES BUSINESS HEADQUATER | 30322 | 0% | 100% | 1 |
9 | EPITAXIAL CVD | 30322 | 0% | 100% | 1 |
10 | GMV UP A 6076 | 30322 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 32403 | 18% | 1% | 179 |
2 | SOLID STATE TECHNOLOGY | 11028 | 3% | 1% | 26 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 6896 | 6% | 0% | 57 |
4 | THIN SOLID FILMS | 4749 | 8% | 0% | 76 |
5 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 4674 | 5% | 0% | 51 |
6 | CHEMICAL VAPOR DEPOSITION | 4369 | 1% | 1% | 12 |
7 | JOURNAL OF THE AUSTRALASIAN CERAMIC SOCIETY | 2753 | 0% | 5% | 2 |
8 | RCA REVIEW | 2519 | 0% | 2% | 4 |
9 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2013 | 5% | 0% | 46 |
10 | KAGAKU KOGAKU RONBUNSHU | 1711 | 2% | 0% | 16 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | TEOS PECVD | 90965 | 0% | 100% | 3 | Search TEOS+PECVD | Search TEOS+PECVD |
2 | TEOS | 82491 | 3% | 10% | 28 | Search TEOS | Search TEOS |
3 | FEATURE SCALE | 68222 | 0% | 75% | 3 | Search FEATURE+SCALE | Search FEATURE+SCALE |
4 | EFFECTIVE REACTIVITY MAP | 60643 | 0% | 100% | 2 | Search EFFECTIVE+REACTIVITY+MAP | Search EFFECTIVE+REACTIVITY+MAP |
5 | FLOW SHAPED STEP COVERAGE | 60643 | 0% | 100% | 2 | Search FLOW+SHAPED+STEP+COVERAGE | Search FLOW+SHAPED+STEP+COVERAGE |
6 | FLOWING LIKE PROFILE | 60643 | 0% | 100% | 2 | Search FLOWING+LIKE+PROFILE | Search FLOWING+LIKE+PROFILE |
7 | LPCVD SILICON NITRIDE | 60643 | 0% | 100% | 2 | Search LPCVD+SILICON+NITRIDE | Search LPCVD+SILICON+NITRIDE |
8 | ORGANOSILICON SOURCE | 60643 | 0% | 100% | 2 | Search ORGANOSILICON+SOURCE | Search ORGANOSILICON+SOURCE |
9 | PLASMA DEPOSITED OXIDES | 60643 | 0% | 100% | 2 | Search PLASMA+DEPOSITED+OXIDES | Search PLASMA+DEPOSITED+OXIDES |
10 | REACTOR SCALE MODEL | 60643 | 0% | 100% | 2 | Search REACTOR+SCALE+MODEL | Search REACTOR+SCALE+MODEL |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | VASILYEV, VY , (2015) EVALUATION OF LOW TEMPERATURE TEOS-OZONE SILICON DIOXIDE THIN FILM CVD UNDER SUB-ATMOSPHERIC PRESSURE USING CONSECUTIVELY PULSED REACTANT INJECTION.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 4. ISSUE 1. P. N3164 -N3167 | 19 | 90% | 0 |
2 | FLORES, LD , CROWELL, JE , (2005) BOUNDARY LAYER CHEMISTRY PROBED BY IN SITU INFRARED SPECTROSCOPY DURING SIO2 DEPOSITION AT ATMOSPHERIC PRESSURE FROM TETRAETHYLORTHOSILICATE AND OZONE.JOURNAL OF PHYSICAL CHEMISTRY B. VOL. 109. ISSUE 34. P. 16544-16553 | 25 | 81% | 2 |
3 | ROMET, S , COUTURIER, MF , WHIDDEN, TK , (2001) MODELING OF SILICON DIOXIDE CHEMICAL VAPOR DEPOSITION FROM TETRAETHOXYSILANE AND OZONE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 148. ISSUE 2. P. G82 -G90 | 21 | 100% | 13 |
4 | SATO, N , SHIMOGAKI, Y , (2012) O-3-TEOS CVD FILM FORMATION ON THERMAL SIO2 PRE-COATED WITH ETHANOL.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 1. ISSUE 5. P. N73 -N78 | 22 | 65% | 2 |
5 | KOBAYASHI, K , (2004) THE FORMATION OF INORGANIC OXIDE INSULATORS FOR USE IN ULSIS FORMED FROM ORGANIC SOURCES.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 111. ISSUE 1. P. 20-24 | 17 | 100% | 0 |
6 | CHUNG, TH , KANG, MS , CHUNG, CJ , KIM, Y , (2009) EFFECTS OF PROCESS PARAMETERS ON THE PROPERTIES OF SILICON OXIDE FILMS USING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION WITH TETRAMETHOXYSILANE.CURRENT APPLIED PHYSICS. VOL. 9. ISSUE 3. P. 598-604 | 22 | 63% | 15 |
7 | SATO, N , SHIMOGAKI, Y , (2012) PATTERN DENSITY DEPENDENCY OF THE UNDERLYING LAYER ON O-3-TETRAETHYLORTHOSILICATE (TEOS) FILM FORMATION.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 1. ISSUE 5. P. N91 -N96 | 15 | 88% | 2 |
8 | ZHANG, JM , WAVHAL, DS , FISHER, ER , (2004) MECHANISMS OF SIO2 FILM DEPOSITION FROM TETRAMETHYLCYCLOTETRASILOXANE, DIMETHYLDIMETHOXYSILANE, AND TRIMETHYLSILANE PLASMAS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 22. ISSUE 1. P. 201-213 | 24 | 67% | 19 |
9 | VALLEE, C , GOULLET, A , GRANIER, A , VAN DER LEE, A , DURAND, J , MARLIERE, C , (2000) INORGANIC TO ORGANIC CROSSOVER IN THIN FILMS DEPOSITED FROM O-2/TEOS PLASMAS.JOURNAL OF NON-CRYSTALLINE SOLIDS. VOL. 272. ISSUE 2-3. P. 163-173 | 23 | 70% | 32 |
10 | VASSILIEV, VY , ZHENG, JZ , TANG, SK , LU, W , HUA, J , LIN, YS , (1999) GROWTH KINETICS AND DEPOSITION-RELATED PROPERTIES OF SUBATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITED BOROPHOSPHOSILICATE GLASS FILM.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 146. ISSUE 8. P. 3039-3051 | 17 | 100% | 11 |
Classes with closest relation at Level 1 |