Class information for:
Level 1: TEOS PECVD//TEOS//FEATURE SCALE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
11111 1007 19.0 51%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
11111 1                   TEOS PECVD//TEOS//FEATURE SCALE 1007

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 TEOS PECVD authKW 90965 0% 100% 3
2 TEOS authKW 82491 3% 10% 28
3 FEATURE SCALE authKW 68222 0% 75% 3
4 EFFECTIVE REACTIVITY MAP authKW 60643 0% 100% 2
5 FLOW SHAPED STEP COVERAGE authKW 60643 0% 100% 2
6 FLOWING LIKE PROFILE authKW 60643 0% 100% 2
7 FOCUS NEW YORK RENSSELAER INTERCONNECT GIGASC address 60643 0% 100% 2
8 LPCVD SILICON NITRIDE authKW 60643 0% 100% 2
9 ORGANOSILICON SOURCE authKW 60643 0% 100% 2
10 PLASMA DEPOSITED OXIDES authKW 60643 0% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Materials Science, Coatings & Films 24523 36% 0% 358
2 Physics, Applied 5423 47% 0% 477
3 Electrochemistry 5155 19% 0% 196
4 Physics, Condensed Matter 834 17% 0% 169
5 Materials Science, Multidisciplinary 830 23% 0% 227
6 Engineering, Electrical & Electronic 613 17% 0% 167
7 Nanoscience & Nanotechnology 479 8% 0% 83
8 Materials Science, Ceramics 377 4% 0% 42
9 Engineering, Chemical 35 4% 0% 40
10 Chemistry, Physical 8 5% 0% 55

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 FOCUS NEW YORK RENSSELAER INTERCONNECT GIGASC 60643 0% 100% 2
2 FOCUS NEW YORK 60631 1% 25% 8
3 BEREICH BAUELEMENTETECHNOL 45479 0% 50% 3
4 PLASMAS COUCHES MINCES 34051 1% 11% 10
5 ATMEL ES2 30322 0% 100% 1
6 CHAIR PHYS CHEM ELE OCHEM TECHNOL 30322 0% 100% 1
7 CNRSENSIGC 30322 0% 100% 1
8 ELECT DEVICES BUSINESS HEADQUATER 30322 0% 100% 1
9 EPITAXIAL CVD 30322 0% 100% 1
10 GMV UP A 6076 30322 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 32403 18% 1% 179
2 SOLID STATE TECHNOLOGY 11028 3% 1% 26
3 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 6896 6% 0% 57
4 THIN SOLID FILMS 4749 8% 0% 76
5 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 4674 5% 0% 51
6 CHEMICAL VAPOR DEPOSITION 4369 1% 1% 12
7 JOURNAL OF THE AUSTRALASIAN CERAMIC SOCIETY 2753 0% 5% 2
8 RCA REVIEW 2519 0% 2% 4
9 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 2013 5% 0% 46
10 KAGAKU KOGAKU RONBUNSHU 1711 2% 0% 16

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 TEOS PECVD 90965 0% 100% 3 Search TEOS+PECVD Search TEOS+PECVD
2 TEOS 82491 3% 10% 28 Search TEOS Search TEOS
3 FEATURE SCALE 68222 0% 75% 3 Search FEATURE+SCALE Search FEATURE+SCALE
4 EFFECTIVE REACTIVITY MAP 60643 0% 100% 2 Search EFFECTIVE+REACTIVITY+MAP Search EFFECTIVE+REACTIVITY+MAP
5 FLOW SHAPED STEP COVERAGE 60643 0% 100% 2 Search FLOW+SHAPED+STEP+COVERAGE Search FLOW+SHAPED+STEP+COVERAGE
6 FLOWING LIKE PROFILE 60643 0% 100% 2 Search FLOWING+LIKE+PROFILE Search FLOWING+LIKE+PROFILE
7 LPCVD SILICON NITRIDE 60643 0% 100% 2 Search LPCVD+SILICON+NITRIDE Search LPCVD+SILICON+NITRIDE
8 ORGANOSILICON SOURCE 60643 0% 100% 2 Search ORGANOSILICON+SOURCE Search ORGANOSILICON+SOURCE
9 PLASMA DEPOSITED OXIDES 60643 0% 100% 2 Search PLASMA+DEPOSITED+OXIDES Search PLASMA+DEPOSITED+OXIDES
10 REACTOR SCALE MODEL 60643 0% 100% 2 Search REACTOR+SCALE+MODEL Search REACTOR+SCALE+MODEL

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 VASILYEV, VY , (2015) EVALUATION OF LOW TEMPERATURE TEOS-OZONE SILICON DIOXIDE THIN FILM CVD UNDER SUB-ATMOSPHERIC PRESSURE USING CONSECUTIVELY PULSED REACTANT INJECTION.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 4. ISSUE 1. P. N3164 -N3167 19 90% 0
2 FLORES, LD , CROWELL, JE , (2005) BOUNDARY LAYER CHEMISTRY PROBED BY IN SITU INFRARED SPECTROSCOPY DURING SIO2 DEPOSITION AT ATMOSPHERIC PRESSURE FROM TETRAETHYLORTHOSILICATE AND OZONE.JOURNAL OF PHYSICAL CHEMISTRY B. VOL. 109. ISSUE 34. P. 16544-16553 25 81% 2
3 ROMET, S , COUTURIER, MF , WHIDDEN, TK , (2001) MODELING OF SILICON DIOXIDE CHEMICAL VAPOR DEPOSITION FROM TETRAETHOXYSILANE AND OZONE.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 148. ISSUE 2. P. G82 -G90 21 100% 13
4 SATO, N , SHIMOGAKI, Y , (2012) O-3-TEOS CVD FILM FORMATION ON THERMAL SIO2 PRE-COATED WITH ETHANOL.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 1. ISSUE 5. P. N73 -N78 22 65% 2
5 KOBAYASHI, K , (2004) THE FORMATION OF INORGANIC OXIDE INSULATORS FOR USE IN ULSIS FORMED FROM ORGANIC SOURCES.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 111. ISSUE 1. P. 20-24 17 100% 0
6 CHUNG, TH , KANG, MS , CHUNG, CJ , KIM, Y , (2009) EFFECTS OF PROCESS PARAMETERS ON THE PROPERTIES OF SILICON OXIDE FILMS USING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION WITH TETRAMETHOXYSILANE.CURRENT APPLIED PHYSICS. VOL. 9. ISSUE 3. P. 598-604 22 63% 15
7 SATO, N , SHIMOGAKI, Y , (2012) PATTERN DENSITY DEPENDENCY OF THE UNDERLYING LAYER ON O-3-TETRAETHYLORTHOSILICATE (TEOS) FILM FORMATION.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 1. ISSUE 5. P. N91 -N96 15 88% 2
8 ZHANG, JM , WAVHAL, DS , FISHER, ER , (2004) MECHANISMS OF SIO2 FILM DEPOSITION FROM TETRAMETHYLCYCLOTETRASILOXANE, DIMETHYLDIMETHOXYSILANE, AND TRIMETHYLSILANE PLASMAS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 22. ISSUE 1. P. 201-213 24 67% 19
9 VALLEE, C , GOULLET, A , GRANIER, A , VAN DER LEE, A , DURAND, J , MARLIERE, C , (2000) INORGANIC TO ORGANIC CROSSOVER IN THIN FILMS DEPOSITED FROM O-2/TEOS PLASMAS.JOURNAL OF NON-CRYSTALLINE SOLIDS. VOL. 272. ISSUE 2-3. P. 163-173 23 70% 32
10 VASSILIEV, VY , ZHENG, JZ , TANG, SK , LU, W , HUA, J , LIN, YS , (1999) GROWTH KINETICS AND DEPOSITION-RELATED PROPERTIES OF SUBATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITED BOROPHOSPHOSILICATE GLASS FILM.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 146. ISSUE 8. P. 3039-3051 17 100% 11

Classes with closest relation at Level 1


Rank Class id link
1 25406 MSOS O P STRUCTURE//SI2H6 GAS//SEMI INSULATING POLYCRYSTALLINE SILICON
2 33212 J AN SCI TECHNOL ORG//CYANIDE TREATMENT//DISPLAY TECHNOL DEV GRP
3 35841 QAS//2 CHLORO 1 1 2 TRIFLUOROETHYL METHYL ETHER//ANHYDROUS FLUORINE GAS
4 3298 SILICON OXYNITRIDE//SILICON NITRIDE//SILICON NITRIDE FILM
5 10828 EPITAXIAL REACTOR//MOCVD REACTOR//PLANETARY REACTOR
6 31535 FIELD INDUCED JUNCTION//INSB GATE CONTROLLED DIODE//PIXEL LINEARITY
7 37122 F 2 LASER//DIELECTRIC TANGENT//MU RAMAN SPECTROMETRY
8 2036 LOW K//LOW K DIELECTRICS//LOW K MATERIALS
9 16292 CVD W//TUNGSTEN THIN FILMS//CVD IRON
10 24432 DIMETHYLALUMINUM HYDRIDE//DIMETHYLALUMINUMHYDRIDE DMAH//SELECTIVE AL CVD

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