Class information for:
Level 1: SONOS//FLASH MEMORY//NAND FLASH MEMORY

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
6607 1464 17.8 55%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
6607 1                   SONOS//FLASH MEMORY//NAND FLASH MEMORY 1464

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SONOS authKW 2055700 8% 81% 122
2 FLASH MEMORY authKW 1431474 16% 29% 240
3 NAND FLASH MEMORY authKW 912319 7% 42% 105
4 NAND FLASH authKW 566688 3% 54% 50
5 NROM authKW 521395 2% 100% 25
6 CHARGE TRAPPING MEMORY authKW 474567 2% 71% 32
7 SILICON OXIDE NITRIDE OXIDE SILICON SONOS authKW 334311 2% 70% 23
8 TANOS authKW 313698 1% 79% 19
9 CHARGE TRAPPING LAYER authKW 307143 1% 82% 18
10 MONOS authKW 293787 1% 78% 18

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 17387 63% 0% 921
2 Physics, Applied 12541 59% 0% 861
3 Nanoscience & Nanotechnology 1945 13% 0% 191
4 Physics, Condensed Matter 834 14% 0% 210
5 Computer Science, Hardware & Architecture 261 3% 0% 39
6 Materials Science, Multidisciplinary 234 12% 0% 179
7 Materials Science, Coatings & Films 213 3% 0% 47
8 Physics, Multidisciplinary 94 5% 0% 80
9 Optics 84 5% 0% 68
10 Telecommunications 15 2% 0% 22

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 FLASH DESIGN TEAM 194116 1% 85% 11
2 EMERGING CENT 156404 1% 50% 15
3 MEMORY BUSINESS 130202 1% 39% 16
4 PROD QUAL ASSURANCE TEAM 104279 0% 100% 5
5 RD TECHNOL DEV 84104 1% 37% 11
6 NVM TEAM 83423 0% 100% 4
7 ANHUI PROV INTEGRATED CIRCUIT DESIGN 62567 0% 100% 3
8 MEMORY PROD GRP 60661 1% 36% 8
9 INTERUNIV SEMICOND 46427 3% 5% 45
10 SEMICOND RD 44384 2% 6% 33

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE ELECTRON DEVICE LETTERS 76737 12% 2% 182
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 53267 13% 1% 197
3 SOLID-STATE ELECTRONICS 19421 7% 1% 96
4 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 12156 2% 2% 25
5 MICROELECTRONIC ENGINEERING 9147 5% 1% 67
6 JAPANESE JOURNAL OF APPLIED PHYSICS 8551 6% 1% 81
7 IEEE JOURNAL OF SOLID-STATE CIRCUITS 7032 4% 1% 53
8 MICROELECTRONICS RELIABILITY 4291 3% 1% 38
9 IEEE TRANSACTIONS ON NANOTECHNOLOGY 3756 1% 1% 18
10 IEICE TRANSACTIONS ON ELECTRONICS 3513 2% 1% 32

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SONOS 2055700 8% 81% 122 Search SONOS Search SONOS
2 FLASH MEMORY 1431474 16% 29% 240 Search FLASH+MEMORY Search FLASH+MEMORY
3 NAND FLASH MEMORY 912319 7% 42% 105 Search NAND+FLASH+MEMORY Search NAND+FLASH+MEMORY
4 NAND FLASH 566688 3% 54% 50 Search NAND+FLASH Search NAND+FLASH
5 NROM 521395 2% 100% 25 Search NROM Search NROM
6 CHARGE TRAPPING MEMORY 474567 2% 71% 32 Search CHARGE+TRAPPING+MEMORY Search CHARGE+TRAPPING+MEMORY
7 SILICON OXIDE NITRIDE OXIDE SILICON SONOS 334311 2% 70% 23 Search SILICON+OXIDE+NITRIDE+OXIDE+SILICON+SONOS Search SILICON+OXIDE+NITRIDE+OXIDE+SILICON+SONOS
8 TANOS 313698 1% 79% 19 Search TANOS Search TANOS
9 CHARGE TRAPPING LAYER 307143 1% 82% 18 Search CHARGE+TRAPPING+LAYER Search CHARGE+TRAPPING+LAYER
10 MONOS 293787 1% 78% 18 Search MONOS Search MONOS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 KIM, S , LEE, SH , KIM, YG , CHO, S , PARK, BG , (2017) HIGHLY COMPACT AND ACCURATE CIRCUIT-LEVEL MACRO MODELING OF GATE-ALL-AROUND CHARGE-TRAP FLASH MEMORY.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 56. ISSUE 1. P. - 22 96% 0
2 RYU, JT , JANG, SH , KIM, TW , (2014) ENHANCEMENT OF ELECTRICAL CHARACTERISTICS OF THE COUPLING RATIO AND THE PROGRAM/ERASE OPERATION FOR NAND FLASH MEMORIES WITH AN ASYMMETRIC INTERPOLY-DIELECTRIC STRUCTURE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 6. P. - 25 83% 0
3 LARCHER, L , PADOVANI, A , (2010) HIGH-KAPPA RELATED RELIABILITY ISSUES IN ADVANCED NON-VOLATILE MEMORIES.MICROELECTRONICS RELIABILITY. VOL. 50. ISSUE 9-11. P. 1251 -1258 30 73% 13
4 SPINELLI, AS , LACAITA, AL , GODA, A , PAOLUCCI, GM , COMPAGNONI, CM , (2015) FITTING CELLS INTO A NARROW V-T INTERVAL: PHYSICAL CONSTRAINTS ALONG THE LIFETIME OF AN EXTREMELY SCALED NAND FLASH MEMORY ARRAY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 5. P. 1491 -1497 19 100% 2
5 TANG, ZJ , LI, R , HU, D , ZHANG, XW , ZHAO, YG , (2016) PERFORMANCE IMPROVEMENT OF CHARGE-TRAP MEMORY BY USING A STACKED ZR0.46SI0.54O2/AL2O3 CHARGE-TRAPPING LAYER.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 213. ISSUE 11. P. 3033 -3038 24 80% 0
6 LARCHER, L , PADOVANI, A , VANDELLI, L , PAVAN, P , (2011) CHARGE TRANSPORT IN HIGH-KAPPA STACKS FOR CHARGE-TRAPPING MEMORY APPLICATIONS: A MODELING PERSPECTIVE (INVITED).MICROELECTRONIC ENGINEERING. VOL. 88. ISSUE 7. P. 1168-1173 22 96% 4
7 LEE, MC , WONG, HY , (2016) INVESTIGATION ON THE CHARGE LOSS MECHANISMS OF NANOSCALE CHARGE TRAP NON-VOLATILE MEMORY BY USING STRETCHED EXPONENTIAL FUNCTION.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. VOL. 16. ISSUE 1. P. 663 -669 16 100% 1
8 PADOVANI, A , ARREGHINI, A , VANDELLI, L , LARCHER, L , VAN DEN BOSCH, G , PAVAN, P , VAN HOUDT, J , (2011) A COMPREHENSIVE UNDERSTANDING OF THE ERASE OF TANOS MEMORIES THROUGH CHARGE SEPARATION EXPERIMENTS AND SIMULATIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 58. ISSUE 9. P. 3147-3155 22 81% 9
9 NIKOLAOU, N , DIMITRAKIS, P , NORMAND, P , SKARLATOS, D , GIANNAKOPOULOS, K , MERGIA, K , IOANNOU-SOUGLERIDIS, V , KUKLI, K , NIINISTO, J , MIZOHATA, K , ET AL (2015) INERT AMBIENT ANNEALING EFFECT ON MANOS CAPACITOR MEMORY CHARACTERISTICS.NANOTECHNOLOGY. VOL. 26. ISSUE 13. P. - 27 59% 1
10 DONG, GQ , PAN, YY , XIE, ND , VARANASI, C , ZHANG, T , (2012) ESTIMATING INFORMATION-THEORETICAL NAND FLASH MEMORY STORAGE CAPACITY AND ITS IMPLICATION TO MEMORY SYSTEM DESIGN SPACE EXPLORATION.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS. VOL. 20. ISSUE 9. P. 1705 -1714 15 100% 28

Classes with closest relation at Level 1


Rank Class id link
1 7730 NANOCRYSTAL MEMORY//NANO FLOATING GATE MEMORY//QUANTUM FUNCT SPIN
2 30953 ANTIFUSE//MULTITIME PROGRAMMABLE MTP//ONE TIME PROGRAMMABLE MEMORY
3 21911 POLYOXIDE//INTER POLY DIELECTRIC IPD//INTERPOLY OXIDE
4 13737 CHARGE PUMP//SWITCHED CAPACITOR SC CONVERTER//SWITCHED CAPACITOR CONVERTER
5 21194 SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP
6 2603 STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN
7 13362 FLASH TRANSLATION LAYER//NAND FLASH MEMORY//FLASH MEMORY
8 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING
9 89 HFO2//HIGH K DIELECTRICS//HIGH K
10 14061 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI

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