Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
1699 | 6741 | 16.6 | 55% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1699 | 2 | HETEROJUNCTION BIPOLAR TRANSISTORS//SIGEHBT//HBT | 6741 |
1985 | 1 | HETEROJUNCTION BIPOLAR TRANSISTORS//HBT//HETEROJUNCTION BIPOLAR TRANSISTOR HBT | 2396 |
2527 | 1 | LOW FREQUENCY NOISE//1 F NOISE//FLICKER NOISE | 2218 |
7303 | 1 | BIPOLAR TRANSISTORS//IEEE TRANSACTIONS ON ELECTRON DEVICES//POLYSILICON EMITTER | 1383 |
14880 | 1 | SIGEHBT//A AMA MICROELECT SCI TECHNOL//MIXED MODE STRESS | 744 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HETEROJUNCTION BIPOLAR TRANSISTORS | authKW | 659854 | 4% | 55% | 267 |
2 | SIGEHBT | authKW | 436952 | 2% | 65% | 149 |
3 | HBT | authKW | 381868 | 3% | 43% | 194 |
4 | LOW FREQUENCY NOISE | authKW | 361602 | 3% | 39% | 206 |
5 | IEEE TRANSACTIONS ON ELECTRON DEVICES | journal | 325837 | 16% | 7% | 1045 |
6 | HETEROJUNCTION BIPOLAR TRANSISTOR HBT | authKW | 310185 | 2% | 55% | 125 |
7 | SOLID-STATE ELECTRONICS | journal | 300129 | 12% | 8% | 808 |
8 | BIPOLAR TRANSISTORS | authKW | 274902 | 2% | 36% | 167 |
9 | 1 F NOISE | authKW | 222333 | 3% | 26% | 191 |
10 | HETEROJUNCTION BIPOLAR TRANSISTORS HBTS | authKW | 215050 | 1% | 57% | 83 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 88573 | 66% | 0% | 4450 |
2 | Physics, Applied | 47755 | 54% | 0% | 3627 |
3 | Physics, Condensed Matter | 10361 | 22% | 0% | 1481 |
4 | Nanoscience & Nanotechnology | 1342 | 6% | 0% | 385 |
5 | Physics, Multidisciplinary | 592 | 6% | 0% | 408 |
6 | Nuclear Science & Technology | 260 | 3% | 0% | 176 |
7 | Materials Science, Coatings & Films | 161 | 2% | 0% | 108 |
8 | Materials Science, Multidisciplinary | 121 | 7% | 0% | 461 |
9 | Instruments & Instrumentation | 104 | 2% | 0% | 144 |
10 | Computer Science, Hardware & Architecture | 89 | 1% | 0% | 64 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | A AMA MICROELECT SCI TECHNOL | 114370 | 1% | 49% | 52 |
2 | RADIOPHYS DEP | 22639 | 0% | 100% | 5 |
3 | CSDL | 21059 | 0% | 42% | 11 |
4 | MICROELECT | 20011 | 4% | 2% | 278 |
5 | INP IC TEAM | 18111 | 0% | 100% | 4 |
6 | UMR 5507 | 13726 | 0% | 13% | 23 |
7 | TSINGHUA INFORMAT TECHNOL | 12072 | 0% | 67% | 4 |
8 | UMR 5818 CNRS | 10346 | 0% | 57% | 4 |
9 | GRMNT | 10186 | 0% | 75% | 3 |
10 | PHYS COMPOSANTS SEMICOND | 9430 | 0% | 17% | 12 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 325837 | 16% | 7% | 1045 |
2 | SOLID-STATE ELECTRONICS | 300129 | 12% | 8% | 808 |
3 | IEEE ELECTRON DEVICE LETTERS | 130465 | 8% | 6% | 510 |
4 | MICROELECTRONICS RELIABILITY | 24329 | 3% | 3% | 194 |
5 | IEEE JOURNAL OF SOLID-STATE CIRCUITS | 20595 | 3% | 2% | 195 |
6 | FLUCTUATION AND NOISE LETTERS | 17994 | 1% | 8% | 53 |
7 | ELECTRONICS LETTERS | 11399 | 5% | 1% | 320 |
8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 7461 | 2% | 1% | 116 |
9 | IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 7112 | 1% | 4% | 38 |
10 | JOURNAL OF APPLIED PHYSICS | 4878 | 5% | 0% | 356 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HETEROJUNCTION BIPOLAR TRANSISTORS | 659854 | 4% | 55% | 267 | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS |
2 | SIGEHBT | 436952 | 2% | 65% | 149 | Search SIGEHBT | Search SIGEHBT |
3 | HBT | 381868 | 3% | 43% | 194 | Search HBT | Search HBT |
4 | LOW FREQUENCY NOISE | 361602 | 3% | 39% | 206 | Search LOW+FREQUENCY+NOISE | Search LOW+FREQUENCY+NOISE |
5 | HETEROJUNCTION BIPOLAR TRANSISTOR HBT | 310185 | 2% | 55% | 125 | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR+HBT | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR+HBT |
6 | BIPOLAR TRANSISTORS | 274902 | 2% | 36% | 167 | Search BIPOLAR+TRANSISTORS | Search BIPOLAR+TRANSISTORS |
7 | 1 F NOISE | 222333 | 3% | 26% | 191 | Search 1+F+NOISE | Search 1+F+NOISE |
8 | HETEROJUNCTION BIPOLAR TRANSISTORS HBTS | 215050 | 1% | 57% | 83 | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS |
9 | OFFSET VOLTAGE | 85991 | 1% | 50% | 38 | Search OFFSET+VOLTAGE | Search OFFSET+VOLTAGE |
10 | FLICKER NOISE | 81554 | 1% | 26% | 69 | Search FLICKER+NOISE | Search FLICKER+NOISE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CRESSLER, JD , (2013) RADIATION EFFECTS IN SIGE TECHNOLOGY.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 60. ISSUE 3. P. 1992 -2014 | 97 | 87% | 14 |
2 | VANDAMME, LKJ , HOOGE, FN , (2008) WHAT DO WE CERTAINLY KNOW ABOUT 1/F NOISE IN MOSTS?.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 55. ISSUE 11. P. 3070 -3085 | 66 | 90% | 117 |
3 | SIMOEN, E , CLAEYS, C , (1999) ON THE FLICKER NOISE IN SUBMICRON SILICON MOSFETS.SOLID-STATE ELECTRONICS. VOL. 43. ISSUE 5. P. 865 -882 | 66 | 92% | 171 |
4 | GHIBAUDO, G , BOUTCHACHA, T , (2002) ELECTRICAL NOISE AND RTS FLUCTUATIONS IN ADVANCED CMOS DEVICES.MICROELECTRONICS RELIABILITY. VOL. 42. ISSUE 4-5. P. 573 -582 | 48 | 94% | 206 |
5 | SIMOEN, E , MERCHA, A , CLAEY, C , LUKYANCHIKOVA, N , (2007) LOW-FREQUENCY NOISE IN SILICON-ON-INSULATOR DEVICES AND TECHNOLOGIES.SOLID-STATE ELECTRONICS. VOL. 51. ISSUE 1. P. 16 -37 | 67 | 71% | 24 |
6 | VANDAMME, LKJ , TREFAN, G , (2001) A REVIEW OF 1/F NOISE IN TERMS OF MOBILITY FLUCTUATIONS AND WHITE NOISE IN MODERN SUBMICRON BIPOLAR TRANSISTORS - BJTS AND HBTS.FLUCTUATION AND NOISE LETTERS. VOL. 1. ISSUE 4. P. R175-R199 | 63 | 94% | 6 |
7 | JONES, BK , (2002) ELECTRICAL NOISE AS A RELIABILITY INDICATOR IN ELECTRONIC DEVICES AND COMPONENTS.IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS. VOL. 149. ISSUE 1. P. 13 -22 | 71 | 71% | 30 |
8 | CRESSLER, JD , (2005) ON THE POTENTIAL OF SIGEHBTS FOR EXTREME ENVIRONMENT ELECTRONICS.PROCEEDINGS OF THE IEEE. VOL. 93. ISSUE 9. P. 1559 -1582 | 46 | 88% | 115 |
9 | ZHIGALSKII, GP , (1997) 1/F NOISE AND NONLINEAR EFFECTS IN THIN METAL FILMS.USPEKHI FIZICHESKIKH NAUK. VOL. 167. ISSUE 6. P. 623-648 | 63 | 94% | 19 |
10 | JONES, BK , (1994) ELECTRICAL NOISE AS A MEASURE OF QUALITY AND RELIABILITY IN ELECTRONIC DEVICES.ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, VOL 87. VOL. 87. ISSUE . P. 201-257 | 68 | 75% | 77 |
Classes with closest relation at Level 2 |