Class information for:
Level 1: J AN SCI TECHNOL ORG//CYANIDE TREATMENT//DISPLAY TECHNOL DEV GRP

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
33212 128 24.7 68%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
33212 1                   J AN SCI TECHNOL ORG//CYANIDE TREATMENT//DISPLAY TECHNOL DEV GRP 128

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 J AN SCI TECHNOL ORG address 899178 5% 54% 7
2 CYANIDE TREATMENT authKW 851994 4% 71% 5
3 DISPLAY TECHNOL DEV GRP address 730579 5% 44% 7
4 SYST SOLUT PLANNING address 636155 3% 67% 4
5 CLEANER SOLUTION authKW 477118 2% 100% 2
6 HCN SOLUTION authKW 477118 2% 100% 2
7 TECHNOL LIAISON OFF address 477118 2% 100% 2
8 LIQUID CRYSTAL DISPLAY GRP address 318078 2% 67% 2
9 NITRIC ACID OXIDATION authKW 318070 5% 22% 6
10 PHOTOENERGET ORGAN MAT address 248481 8% 10% 10

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Materials Science, Coatings & Films 2161 30% 0% 38
2 Physics, Applied 997 56% 0% 72
3 Physics, Condensed Matter 635 38% 0% 48
4 Chemistry, Physical 319 34% 0% 44
5 Electrochemistry 42 5% 0% 7
6 Materials Science, Multidisciplinary 22 13% 0% 16
7 Physics, Multidisciplinary 17 7% 0% 9
8 Engineering, Electrical & Electronic 10 8% 0% 10
9 Energy & Fuels 6 3% 0% 4
10 Materials Science, Ceramics 5 2% 0% 2

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 J AN SCI TECHNOL ORG 899178 5% 54% 7
2 DISPLAY TECHNOL DEV GRP 730579 5% 44% 7
3 SYST SOLUT PLANNING 636155 3% 67% 4
4 TECHNOL LIAISON OFF 477118 2% 100% 2
5 LIQUID CRYSTAL DISPLAY GRP 318078 2% 67% 2
6 PHOTOENERGET ORGAN MAT 248481 8% 10% 10
7 AUDIO VISUAL TECHNOL DEV GRP 238559 1% 100% 1
8 DEF FEE 238559 1% 100% 1
9 DEV PLANNING GRP 238559 1% 100% 1
10 DISPLAY DEVICE BUSINESS GRP 238559 1% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 APPLIED SURFACE SCIENCE 6146 23% 0% 30
2 ACTA PHYSICA SLOVACA 4252 3% 0% 4
3 CENTRAL EUROPEAN JOURNAL OF PHYSICS 3110 3% 0% 4
4 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 2935 3% 0% 4
5 SURFACE SCIENCE 706 7% 0% 9
6 ACTA CHIMICA SLOVENICA 532 2% 0% 2
7 ELECTROCHEMICAL AND SOLID STATE LETTERS 498 2% 0% 3
8 SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY 405 1% 0% 1
9 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 380 5% 0% 7
10 JOURNAL OF APPLIED PHYSICS 365 10% 0% 13

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 CYANIDE TREATMENT 851994 4% 71% 5 Search CYANIDE+TREATMENT Search CYANIDE+TREATMENT
2 CLEANER SOLUTION 477118 2% 100% 2 Search CLEANER+SOLUTION Search CLEANER+SOLUTION
3 HCN SOLUTION 477118 2% 100% 2 Search HCN+SOLUTION Search HCN+SOLUTION
4 NITRIC ACID OXIDATION 318070 5% 22% 6 Search NITRIC+ACID+OXIDATION Search NITRIC+ACID+OXIDATION
5 CHARGE VERSION OF DLTS 238559 1% 100% 1 Search CHARGE+VERSION+OF+DLTS Search CHARGE+VERSION+OF+DLTS
6 CN TREATMENT 238559 1% 100% 1 Search CN+TREATMENT Search CN+TREATMENT
7 CYANIDE METHOD 238559 1% 100% 1 Search CYANIDE+METHOD Search CYANIDE+METHOD
8 CYANIDE PASSIVATION 238559 1% 100% 1 Search CYANIDE+PASSIVATION Search CYANIDE+PASSIVATION
9 FOULING LEAD 238559 1% 100% 1 Search FOULING+LEAD Search FOULING+LEAD
10 INTERFACE STALES 238559 1% 100% 1 Search INTERFACE+STALES Search INTERFACE+STALES

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 PINCIK, E , KOBAYASHI, H , RUSNAK, J , TAKAHASHI, M , BRUNNER, R , (2013) ABOUT ELECTRICAL PROPERTIES OF PASSIVATED SIO2/SI STRUCTURES PREPARED ELECTRO-CHEMICALLY IN HCLO4 SOLUTIONS.APPLIED SURFACE SCIENCE. VOL. 269. ISSUE . P. 148-154 15 83% 3
2 PINCIK, E , KOBAYASHI, H , RUSNAK, J , TAKAHASHI, M , MIKULA, M , KIM, WB , KUCERA, M , BRUNNER, R , JURECKA, S , (2012) PASSIVATION OF SI-BASED STRUCTURES IN HCN AND KCN SOLUTIONS.APPLIED SURFACE SCIENCE. VOL. 258. ISSUE 21. P. 8397 -8405 15 79% 4
3 KIMURA, K , TAKAHASHI, M , KOBAYASHI, H , (2014) METAL REMOVAL AND DEFECT PASSIVATION PERFORMED ON SI WAFERS FOR SOLAR CELL USE BY HCN TREATMENTS.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 3. ISSUE 2. P. Q11-Q15 12 71% 0
4 TAKAHASHI, M , HIGASHI, Y , OZAKI, S , KOBAYASHI, H , (2011) CHEMICAL STATES OF COPPER CONTAMINANTS ON SIO2 SURFACES AND THEIR REMOVAL BY PPM-ORDER HCN AQUEOUS SOLUTIONS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 158. ISSUE 8. P. H825 -H829 15 56% 0
5 KOBAYASHI, H , SAKURAI, T , YAMASHITA, Y , KUBOTA, T , MAIDA, O , TAKAHASHI, M , (2006) METHOD OF OBSERVATION OF LOW DENSITY INTERFACE STATES BY MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPY UNDER BIAS AND PASSIVATION BY CYANIDE IONS.APPLIED SURFACE SCIENCE. VOL. 252. ISSUE 21. P. 7700 -7712 21 44% 9
6 NARITA, H , TAKAHASHI, M , IWASA, H , KOBAYASHI, H , (2008) COMPLETE REMOVAL OF COPPER CONTAMINANTS ON BARE SILICON SURFACES BY USE OF HCN AQUEOUS SOLUTIONS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 155. ISSUE 2. P. H103 -H107 15 56% 1
7 KOBAYASHI, H , LIU, YL , YAMASHITA, Y , IVANCO, J , IMAI, S , TAKAHASHI, M , (2006) METHODS OF OBSERVATION AND ELIMINATION OF SEMICONDUCTOR DEFECT STATES.SOLAR ENERGY. VOL. 80. ISSUE 6. P. 645 -652 13 54% 20
8 JURECKA, S , KOBAYASHI, H , TAKAHASHI, M , MATSUMOTO, T , PINCIK, E , (2012) PROPERTIES OF CHARGE STATES IN MOS STRUCTURE WITH ULTRATHIN OXIDE LAYER.APPLIED SURFACE SCIENCE. VOL. 258. ISSUE 21. P. 8409 -8414 8 73% 2
9 IMAMURA, K , TAKAHASHI, M , ASUHA , HIRAYAMA, Y , IMAI, S , KOBAYASHI, H , (2010) NITRIC ACID OXIDATION OF SI METHOD AT 120 DEGREES C: HNO3 CONCENTRATION DEPENDENCE.JOURNAL OF APPLIED PHYSICS. VOL. 107. ISSUE 5. P. - 11 52% 3
10 KUBOTA, Y , MATSUMOTO, T , TSUJI, H , SUZUKI, N , IMAI, S , KOBAYASHI, H , (2012) 1.5-V-OPERATION ULTRALOW POWER CIRCUIT OF POLY-SI TFTS FABRICATED USING THE NAOS METHOD.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 59. ISSUE 2. P. 385-392 12 44% 5

Classes with closest relation at Level 1


Rank Class id link
1 19608 SI SIO2//GE INSULATOR STRUCTURE//MICROWAVE TRANSIENT PHOTOCONDUCTIVITY
2 28032 MIS TUNNEL DIODE//ANODIC OXIDE ANO//COMPOSED CAPACITOR
3 24686 LOW TEMPERATURE SILICON OXIDATION//DIRECTIONAL OXIDATION//HIGH RATE SILICON OXIDATION
4 3635 SI OXIDATION//SILICON OXIDATION//SIO2 SI INTERFACE
5 8494 HYDROGEN TERMINATION//NATIVE OXIDE//HYDRIDE SPECIES
6 17559 ALKALI METALS//CEA SERV RECH SUR ES IRRADIAT MAT//SURFACE SCIENCE
7 24872 DEVICE FUNCT SECT//DIFFUSION TEMPERATURE//MIS SOLAR CELLS
8 11111 TEOS PECVD//TEOS//FEATURE SCALE
9 21911 POLYOXIDE//INTER POLY DIELECTRIC IPD//INTERPOLY OXIDE
10 5987 4H SIC//CHANNEL MOBILITY//SIO2 SIC INTERFACE

Go to start page