Class information for:
Level 2: IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
532 14860 17.8 53%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
566 1                   FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET 3300
3722 1                   STRAINED SI//MOSFET//BALLISTIC TRANSPORT 1922
4469 1                   HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING 1780
4515 1                   LDMOS//SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE 1774
6444 1                   EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS 1482
10635 1                   TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNELING FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT 1046
12775 1                   IEEE JOURNAL OF SOLID-STATE CIRCUITS//EMBEDDED DRAM//DRAM 881
13793 1                   DEVICE MODELLING GRP//RANDOM DOPANT FLUCTUATION//RANDOM DOPANT 813
21308 1                   BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION 425
22955 1                   QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES 363
23664 1                   007 MICROMETER TECHNOLOGIES//05 MICROMETER TECHNOLOGIES//5 LAYERS OF METAL 339
24736 1                   1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS 303
26157 1                   VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX 262
30345 1                   HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL 170

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES journal 1288611 21% 20% 3083
2 MOSFET authKW 890545 8% 36% 1206
3 FINFET authKW 514795 3% 59% 428
4 SOLID-STATE ELECTRONICS journal 505816 10% 16% 1558
5 IEEE ELECTRON DEVICE LETTERS journal 424542 9% 15% 1365
6 SHORT CHANNEL EFFECTS authKW 312906 2% 60% 254
7 DOUBLE GATE MOSFET authKW 294589 1% 86% 166
8 THRESHOLD VOLTAGE authKW 285693 2% 40% 346
9 ENGINEERING, ELECTRICAL & ELECTRONIC WoSSC 238751 73% 1% 10800
10 COMPACT MODEL authKW 221950 2% 44% 244

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Engineering, Electrical & Electronic 238751 73% 1% 10800
2 Physics, Applied 123346 58% 1% 8611
3 Physics, Condensed Matter 15251 18% 0% 2735
4 Nanoscience & Nanotechnology 11389 10% 0% 1511
5 Computer Science, Hardware & Architecture 3360 3% 0% 440
6 Physics, Multidisciplinary 374 4% 0% 615
7 Materials Science, Multidisciplinary 318 7% 0% 1053
8 Computer Science, Interdisciplinary Applications 191 2% 0% 245
9 Materials Science, Coatings & Films 165 1% 0% 186
10 Engineering, Manufacturing 56 1% 0% 93

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 DEVICE MODELLING GRP 100318 0% 67% 73
2 MICROELECT 99231 6% 5% 915
3 IMEP LAHC 66871 1% 29% 114
4 ELECT TECNOL COMP 65523 1% 38% 85
5 NANO DEVICE SIMULAT 53310 0% 84% 31
6 DEEN DAYAL UPADHYAYA 45441 0% 43% 52
7 ELECT ENGN 44986 16% 1% 2304
8 NETWORK COMPUTAT NANOTECHNOL 43498 0% 33% 65
9 LSI PSI USP 41763 0% 88% 23
10 DEVICE MODELING GRP 39406 0% 80% 24

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 1288611 21% 20% 3083
2 SOLID-STATE ELECTRONICS 505816 10% 16% 1558
3 IEEE ELECTRON DEVICE LETTERS 424542 9% 15% 1365
4 JOURNAL OF COMPUTATIONAL ELECTRONICS 128483 2% 25% 256
5 IEEE JOURNAL OF SOLID-STATE CIRCUITS 79911 4% 7% 569
6 MICROELECTRONICS RELIABILITY 57318 3% 6% 442
7 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 40751 0% 33% 60
8 IEEE TRANSACTIONS ON NANOTECHNOLOGY 30313 1% 9% 163
9 MICROELECTRONICS JOURNAL 23280 1% 5% 210
10 JAPANESE JOURNAL OF APPLIED PHYSICS 22354 3% 3% 421

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class		 LCSH search Wikipedia search
1 MOSFET 890545 8% 36% 1206 Search MOSFET Search MOSFET
2 FINFET 514795 3% 59% 428 Search FINFET Search FINFET
3 SHORT CHANNEL EFFECTS 312906 2% 60% 254 Search SHORT+CHANNEL+EFFECTS Search SHORT+CHANNEL+EFFECTS
4 DOUBLE GATE MOSFET 294589 1% 86% 166 Search DOUBLE+GATE+MOSFET Search DOUBLE+GATE+MOSFET
5 THRESHOLD VOLTAGE 285693 2% 40% 346 Search THRESHOLD+VOLTAGE Search THRESHOLD+VOLTAGE
6 COMPACT MODEL 221950 2% 44% 244 Search COMPACT+MODEL Search COMPACT+MODEL
7 SOI 208864 2% 31% 332 Search SOI Search SOI
8 BAND TO BAND TUNNELING 179388 1% 73% 119 Search BAND+TO+BAND+TUNNELING Search BAND+TO+BAND+TUNNELING
9 SOI MOSFET 171621 1% 75% 112 Search SOI+MOSFET Search SOI+MOSFET
10 SILICON ON INSULATOR SOI 168477 2% 34% 245 Search SILICON+ON+INSULATOR+SOI Search SILICON+ON+INSULATOR+SOI

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 CRISTOLOVEANU, S , BAWEDIN, M , IONICA, I , (2016) A REVIEW OF ELECTRICAL CHARACTERIZATION TECHNIQUES FOR ULTRATHIN FDSOI MATERIALS AND DEVICES.SOLID-STATE ELECTRONICS. VOL. 117. ISSUE . P. 10 -36 82 87% 4
2 IONESCU, AM , RIEL, H , (2011) TUNNEL FIELD-EFFECT TRANSISTORS AS ENERGY-EFFICIENT ELECTRONIC SWITCHES.NATURE. VOL. 479. ISSUE 7373. P. 329 -337 37 82% 542
3 SEABAUGH, AC , ZHANG, Q , (2010) LOW-VOLTAGE TUNNEL TRANSISTORS FOR BEYOND CMOS LOGIC.PROCEEDINGS OF THE IEEE. VOL. 98. ISSUE 12. P. 2095 -2110 44 79% 435
4 BOURDET, L , LI, J , PELLOUX-PRAYER, J , TRIOZON, F , CASSE, M , BARRAUD, S , MARTINIE, S , RIDEAU, D , NIQUET, YM , (2016) CONTACT RESISTANCES IN TRIGATE AND FINFET DEVICES IN A NON-EQUILIBRIUM GREEN'S FUNCTIONS APPROACH.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 8. P. - 52 93% 1
5 RAHIMIAN, M , FATHIPOUR, M , (2016) JUNCTIONLESS NANOWIRE TFET WITH BUILT-IN N-P-N BIPOLAR ACTION: PHYSICS AND OPERATIONAL PRINCIPLE.JOURNAL OF APPLIED PHYSICS. VOL. 120. ISSUE 22. P. - 53 96% 0
6 BAYKAN, MO , THOMPSON, SE , NISHIDA, T , (2010) STRAIN EFFECTS ON THREE-DIMENSIONAL, TWO-DIMENSIONAL, AND ONE-DIMENSIONAL SILICON LOGIC DEVICES: PREDICTING THE FUTURE OF STRAINED SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 108. ISSUE 9. P. - 68 73% 25
7 SRIKANTAIAH, JG , DASGUPTA, A , (2012) QUANTUM MECHANICAL EFFECTS IN BULK MOSFETS FROM A COMPACT MODELING PERSPECTIVE: A REVIEW.IETE TECHNICAL REVIEW. VOL. 29. ISSUE 1. P. 3 -28 59 83% 3
8 PARIHAR, MS , KRANTI, A , (2014) REVISITING THE DOPING REQUIREMENT FOR LOW POWER JUNCTIONLESS MOSFETS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 29. ISSUE 7. P. - 43 96% 13
9 RAHIMIAN, M , FATHIPOUR, M , (2016) ASYMMETRIC JUNCTIONLESS NANOWIRE TFET WITH BUILT-IN SOURCE POCKET EMPHASIZING ON ENERGY BAND MODIFICATION.JOURNAL OF COMPUTATIONAL ELECTRONICS. VOL. 15. ISSUE 4. P. 1297 -1307 44 98% 0
10 MAHABADI, SEJ , (2016) UPPER DRIFT REGION DOUBLE STEP PARTIAL SOI LDMOSFET: A NOVEL DEVICE FOR ENHANCING BREAKDOWN VOLTAGE AND OUTPUT CHARACTERISTICS.SUPERLATTICES AND MICROSTRUCTURES. VOL. 89. ISSUE . P. 345 -354 26 93% 12

Classes with closest relation at Level 2


Rank Class id link
1 474 FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI
2 1699 HETEROJUNCTION BIPOLAR TRANSISTORS//SIGEHBT//HBT
3 1299 SIGE//STRAINED SI//VIRTUAL SUBSTRATE
4 664 ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS
5 1826 TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
6 470 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE//IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS//NETWORK ON CHIP
7 579 IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC
8 1385 POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS
9 3264 SOLAR CELLS//SOLID-STATE ELECTRONICS//OPEN CIRCUIT VOLTAGE DECAY OCVD
10 577 ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING//IEEE JOURNAL OF SOLID-STATE CIRCUITS//CURRENT MODE CIRCUITS

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