Class information for:
Level 1: STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
2603 2199 19.5 57%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
474 2             FLASH MEMORY//SONOS//NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 15884
2603 1                   STRESS INDUCED LEAKAGE CURRENT//OXIDE RELIABILITY//SOFT BREAKDOWN 2199

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 STRESS INDUCED LEAKAGE CURRENT authKW 470980 2% 81% 42
2 OXIDE RELIABILITY authKW 394924 2% 66% 43
3 SOFT BREAKDOWN authKW 361858 2% 74% 35
4 OXIDE BREAKDOWN authKW 294802 2% 56% 38
5 DIELECTRIC BREAKDOWN authKW 247231 4% 18% 98
6 HARD BREAKDOWN authKW 211183 1% 89% 17
7 MOS DEVICES authKW 183166 3% 20% 66
8 MICROELECTRONICS RELIABILITY journal 171060 13% 4% 292
9 SILC authKW 142227 1% 41% 25
10 TIME DEPENDENT DIELECTRIC BREAKDOWN TDDB authKW 138970 1% 35% 29

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 30332 74% 0% 1620
2 Engineering, Electrical & Electronic 21344 57% 0% 1257
3 Nanoscience & Nanotechnology 10222 23% 0% 516
4 Physics, Condensed Matter 1808 17% 0% 368
5 Materials Science, Coatings & Films 620 4% 0% 94
6 Optics 352 7% 0% 147
7 Materials Science, Ceramics 205 2% 0% 50
8 Materials Science, Multidisciplinary 132 9% 0% 200
9 Electrochemistry 55 2% 0% 44
10 Computer Science, Hardware & Architecture 25 1% 0% 20

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 AUTOMAT MICROELECT 80022 1% 41% 14
2 ZI ROUSSET 76884 1% 46% 12
3 PHYS COMPOSANTS SEMICOND 39417 1% 20% 14
4 ENG ELECT 38442 0% 46% 6
5 LPCS 31341 1% 11% 20
6 ETUD MICROELECT MAT 31238 0% 75% 3
7 L2MP POLYTECH 31238 0% 75% 3
8 SEMICOND DEVICE RELIABIL 31238 0% 75% 3
9 RM MON 27768 0% 100% 2
10 TECHNOL CHARACTERISAT MODELLING GRP 27768 0% 100% 2

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MICROELECTRONICS RELIABILITY 171060 13% 4% 292
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 48237 10% 2% 230
3 SOLID-STATE ELECTRONICS 43041 8% 2% 175
4 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 29861 2% 4% 48
5 MICROELECTRONIC ENGINEERING 29048 7% 1% 146
6 IEEE ELECTRON DEVICE LETTERS 22821 6% 1% 122
7 JOURNAL OF APPLIED PHYSICS 8253 12% 0% 255
8 APPLIED PHYSICS LETTERS 3469 8% 0% 171
9 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2325 2% 0% 37
10 MICROELECTRONICS INTERNATIONAL 2042 0% 2% 7

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 STRESS INDUCED LEAKAGE CURRENT 470980 2% 81% 42 Search STRESS+INDUCED+LEAKAGE+CURRENT Search STRESS+INDUCED+LEAKAGE+CURRENT
2 OXIDE RELIABILITY 394924 2% 66% 43 Search OXIDE+RELIABILITY Search OXIDE+RELIABILITY
3 SOFT BREAKDOWN 361858 2% 74% 35 Search SOFT+BREAKDOWN Search SOFT+BREAKDOWN
4 OXIDE BREAKDOWN 294802 2% 56% 38 Search OXIDE+BREAKDOWN Search OXIDE+BREAKDOWN
5 DIELECTRIC BREAKDOWN 247231 4% 18% 98 Search DIELECTRIC+BREAKDOWN Search DIELECTRIC+BREAKDOWN
6 HARD BREAKDOWN 211183 1% 89% 17 Search HARD+BREAKDOWN Search HARD+BREAKDOWN
7 MOS DEVICES 183166 3% 20% 66 Search MOS+DEVICES Search MOS+DEVICES
8 SILC 142227 1% 41% 25 Search SILC Search SILC
9 TIME DEPENDENT DIELECTRIC BREAKDOWN TDDB 138970 1% 35% 29 Search TIME+DEPENDENT+DIELECTRIC+BREAKDOWN+TDDB Search TIME+DEPENDENT+DIELECTRIC+BREAKDOWN+TDDB
10 THIN OXIDE 128511 1% 51% 18 Search THIN+OXIDE Search THIN+OXIDE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 MIRANDA, E , SUNE, J , (2004) ELECTRON TRANSPORT THROUGH BROKEN DOWN ULTRA-THIN SIO2 LAYERS IN MOS DEVICES.MICROELECTRONICS RELIABILITY. VOL. 44. ISSUE 1. P. 1-23 106 85% 62
2 LOMBARDO, S , STATHIS, JH , LINDER, BP , PEY, KL , PALUMBO, F , TUNG, CH , (2005) DIELECTRIC BREAKDOWN MECHANISMS IN GATE OXIDES.JOURNAL OF APPLIED PHYSICS. VOL. 98. ISSUE 12. P. - 85 80% 169
3 STATHIS, JH , (2002) RELIABILITY LIMITS FOR THE GATE INSULATOR IN CMOS TECHNOLOGY.IBM JOURNAL OF RESEARCH AND DEVELOPMENT. VOL. 46. ISSUE 2-3. P. 265 -286 88 78% 113
4 MARTIN, A , O'SULLIVAN, P , MATHEWSON, A , (1998) DIELECTRIC RELIABILITY MEASUREMENT METHODS: A REVIEW.MICROELECTRONICS RELIABILITY. VOL. 38. ISSUE 1. P. 37 -72 66 79% 60
5 WU, EY , SUNE, J , (2005) POWER-LAW VOLTAGE ACCELERATION: A KEY ELEMENT FOR ULTRA-THIN GATE OXIDE RELIABILITY.MICROELECTRONICS RELIABILITY. VOL. 45. ISSUE 12. P. 1809 -1834 46 84% 70
6 SUEHLE, JS , (2002) ULTRATHIN GATE OXIDE RELIABILITY: PHYSICAL MODELS, STATISTICS, AND CHARACTERIZATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 49. ISSUE 6. P. 958 -971 48 84% 78
7 NAFRIA, M , SUNE, J , AYMERICH, X , (1996) BREAKDOWN OF THIN GATE SILICON DIOXIDE FILMS - A REVIEW.MICROELECTRONICS RELIABILITY. VOL. 36. ISSUE 7-8. P. 871-905 52 85% 11
8 ESSENI, D , BUDE, JD , SELMI, L , (2002) ON INTERFACE AND OXIDE DEGRADATION IN VLSI MOSFETS - PART II: FOWLER-NORDHEIM STRESS REGIME.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 49. ISSUE 2. P. 254 -263 45 76% 24
9 HO, CH , KIM, SY , ROY, K , (2015) ULTRA-THIN DIELECTRIC BREAKDOWN IN DEVICES AND CIRCUITS: A BRIEF REVIEW.MICROELECTRONICS RELIABILITY. VOL. 55. ISSUE 2. P. 308 -317 27 87% 4
10 DEGRAEVE, R , KACZER, B , GROESENEKEN, G , (1999) DEGRADATION AND BREAKDOWN IN THIN OXIDE LAYERS: MECHANISMS, MODELS AND RELIABILITY PREDICTION.MICROELECTRONICS RELIABILITY. VOL. 39. ISSUE 10. P. 1445 -1460 39 91% 62

Classes with closest relation at Level 1


Rank Class id link
1 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
2 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING
3 23114 LEHRSTUHL HALBLEITERTECH//MOS TUNNEL STRUCTURE//SI MIS TET
4 6002 BORON PENETRATION//NITRIDED OXIDE//OXYNITRIDATION
5 14061 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//NBTI
6 28032 MIS TUNNEL DIODE//ANODIC OXIDE ANO//COMPOSED CAPACITOR
7 21911 POLYOXIDE//INTER POLY DIELECTRIC IPD//INTERPOLY OXIDE
8 30953 ANTIFUSE//MULTITIME PROGRAMMABLE MTP//ONE TIME PROGRAMMABLE MEMORY
9 34788 CERIUM MAGNETOPLUMBITE//EDS SPECTRA//ENAMEL INSERT RESTORATION
10 37271 GRAZING X RAY REFLECTOMETRY//ANOMALOUS DISPERSION EFFECT//BI POLAR DESIGN

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