Class information for:
Level 2: OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
648 13601 19.6 52%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
648 2             OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING 13601
1673 1                   OXYGEN PRECIPITATION//CZOCHRALSKI SILICON//OXYGEN PRECIPITATES 2543
4246 1                   GETTERING//DLTS//GETTERING EFFICIENCY 1821
5113 1                   HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN ATOM TREATMENT 1671
6817 1                   SOVIET PHYSICS SEMICONDUCTORS-USSR//LIFETIME CONTROL//DLTS 1441
11412 1                   ELECTRON BEAM INDUCED CURRENT//EBIC//ELECTRON BEAM APPLICATIONS 983
11988 1                   SMART CUT//ION CUT//GETTERING 939
12826 1                   SIMOX//CONTACTLESS I V METHOD//BURIED OXIDE LAYER 878
13429 1                   INDIRECT BANDGAP SEMICONDUCTOR//D LINES//EBIC 837
14069 1                   GERMANIUM//L DLTS//CNR IMM MATIS 795
17770 1                   VOLTCOULOMETRY//DLTS RESOLUTION//SEMI INSULATING MATERIALS 583
20489 1                   PN JUNCTION LEAKAGE//IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE 457
22936 1                   OPTIMIZATION OF ANNEALING//SILICON MICROCAVITY//DECREASING OF DEPTH OF P N JUNCTIONS 364
31721 1                   GLASS BEAD DESTRUCTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//STATE TORAT 149
32348 1                   EFFECTIVE MEDIUM ANALYSIS EMA//ETCH RATE PROFILE//ETCH RATE PROFILING 140

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 OXYGEN PRECIPITATION authKW 173227 1% 89% 87
2 OXYGEN PRECIPITATES authKW 163678 1% 86% 85
3 GETTERING authKW 161798 1% 53% 137
4 CZOCHRALSKI SILICON authKW 158172 1% 77% 92
5 SILICON authKW 156454 8% 6% 1123
6 SOVIET PHYSICS SEMICONDUCTORS-USSR journal 148545 4% 11% 609
7 THERMAL DONORS authKW 147884 1% 79% 84
8 DLTS authKW 145736 2% 31% 209
9 SOLID STATE PHENOMENA journal 107240 2% 15% 325
10 GROWN IN DEFECTS authKW 105003 0% 88% 53

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Condensed Matter 86709 42% 1% 5737
2 Physics, Applied 65088 45% 1% 6101
3 Materials Science, Multidisciplinary 11538 23% 0% 3102
4 Materials Science, Coatings & Films 4776 5% 0% 641
5 Nuclear Science & Technology 3191 5% 0% 711
6 Engineering, Electrical & Electronic 3099 11% 0% 1539
7 Instruments & Instrumentation 2817 5% 0% 726
8 Physics, Multidisciplinary 2441 8% 0% 1064
9 Physics, Nuclear 1686 4% 0% 559
10 Microscopy 1444 1% 0% 167

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELECT MAT DEVICES NANOSTRUCT 41668 0% 77% 24
2 RIAST 20744 0% 49% 19
3 SOLID STATE SCI 19512 1% 8% 106
4 SITIX 19382 0% 79% 11
5 SEH ISOBE RD 18089 0% 73% 11
6 STATE SILICON MAT 16807 1% 4% 187
7 SIMULAT PART 15949 0% 89% 8
8 MICROELECT TECHNOL 14690 0% 11% 61
9 IHP 13771 0% 36% 17
10 SOLID STATE PHYS SECT 12887 0% 13% 44

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 SOVIET PHYSICS SEMICONDUCTORS-USSR 148545 4% 11% 609
2 SOLID STATE PHENOMENA 107240 2% 15% 325
3 SEMICONDUCTORS 52730 3% 6% 400
4 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 45389 5% 3% 644
5 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 38570 3% 5% 358
6 JOURNAL OF APPLIED PHYSICS 34021 10% 1% 1296
7 APPLIED PHYSICS LETTERS 17584 7% 1% 962
8 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 16701 4% 2% 496
9 PHYSICA B-CONDENSED MATTER 15761 3% 2% 476
10 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 14274 2% 3% 228

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class		 LCSH search Wikipedia search
1 OXYGEN PRECIPITATION 173227 1% 89% 87 Search OXYGEN+PRECIPITATION Search OXYGEN+PRECIPITATION
2 OXYGEN PRECIPITATES 163678 1% 86% 85 Search OXYGEN+PRECIPITATES Search OXYGEN+PRECIPITATES
3 GETTERING 161798 1% 53% 137 Search GETTERING Search GETTERING
4 CZOCHRALSKI SILICON 158172 1% 77% 92 Search CZOCHRALSKI+SILICON Search CZOCHRALSKI+SILICON
5 SILICON 156454 8% 6% 1123 Search SILICON Search SILICON
6 THERMAL DONORS 147884 1% 79% 84 Search THERMAL+DONORS Search THERMAL+DONORS
7 DLTS 145736 2% 31% 209 Search DLTS Search DLTS
8 GROWN IN DEFECTS 105003 0% 88% 53 Search GROWN+IN+DEFECTS Search GROWN+IN+DEFECTS
9 OXIDE PRECIPITATE 56384 0% 93% 27 Search OXIDE+PRECIPITATE Search OXIDE+PRECIPITATE
10 CZ SILICON 50455 0% 75% 30 Search CZ+SILICON Search CZ+SILICON

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 ISTRATOV, AA , HIESLMAIR, H , WEBER, ER , (1999) IRON AND ITS COMPLEXES IN SILICON.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 69. ISSUE 1. P. 13 -44 204 92% 338
2 YU, XG , CHEN, JH , MA, XY , YANG, DR , (2013) IMPURITY ENGINEERING OF CZOCHRALSKI SILICON.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 74. ISSUE 1-2. P. 1 -33 175 89% 10
3 PIVAC, B , SASSELLA, A , STELLA, A , BORGHESI, A , (1995) OXYGEN PRECIPITATION IN SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 77. ISSUE 9. P. 4169 -4244 179 87% 363
4 LONDOS, CA , SGOUROU, EN , HALL, D , CHRONEOS, A , (2014) VACANCY-OXYGEN DEFECTS IN SILICON: THE IMPACT OF ISOVALENT DOPING.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 25. ISSUE 6. P. 2395 -2410 125 81% 6
5 JONES, R , COOMER, BJ , GOSS, JP , HOURAHINE, B , RESENDE, A , (2000) THE INTERACTION OF HYDROGEN WITH DEEP LEVEL DEFECTS IN SILICON.SOLID STATE PHENOMENA. VOL. 71. ISSUE . P. 173 -248 174 85% 30
6 CHRONEOS, A , BRACHT, H , (2014) DIFFUSION OF N-TYPE DOPANTS IN GERMANIUM.APPLIED PHYSICS REVIEWS. VOL. 1. ISSUE 1. P. - 106 76% 34
7 CHRONEOS, A , SGOUROU, EN , LONDOS, CA , SCHWINGENSCHLOGL, U , (2015) OXYGEN DEFECT PROCESSES IN SILICON AND SILICON GERMANIUM.APPLIED PHYSICS REVIEWS. VOL. 2. ISSUE 2. P. - 122 76% 5
8 CHEVALLIER, J , PAJOT, B , (2002) INTERACTION OF HYDROGEN WITH IMPURITIES AND DEFECTS IN SEMICONDUCTORS.DEFECT INTERACTION AND CLUSTERING IN SEMICONDUCTORS. VOL. 85-86. ISSUE . P. 203 -283 190 69% 15
9 ISTRATOV, AA , HIESLMAIR, H , WEBER, ER , (2000) IRON CONTAMINATION IN SILICON TECHNOLOGY.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 70. ISSUE 5. P. 489 -534 214 52% 192
10 ESTREICHER, SK , (1995) HYDROGEN-RELATED DEFECTS IN CRYSTALLINE SEMICONDUCTORS - A THEORISTS PERSPECTIVE.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 14. ISSUE 7-8. P. 319 -412 198 65% 195

Classes with closest relation at Level 2


Rank Class id link
1 1826 TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
2 1998 MULTICRYSTALLINE SILICON//IEEE JOURNAL OF PHOTOVOLTAICS//SOLAR CELLS
3 3874 AC SURFACE PHOTOVOLTAGE//TECH M PUPIN//SCANNING PHOTON MICROSCOPE
4 2384 IR LASERS//OPT SENSORS SPECT//SOVIET PHYSICS SEMICONDUCTORS-USSR
5 3149 CLEANROOM//PHOTORESIST REMOVAL//MINIENVIRONMENT
6 4090 MAGNET SENSOR//SOVIET PHYSICS SEMICONDUCTORS-USSR//RADIATION RESISTANT HALL SENSORS
7 4045 MIAB WELDING//SOVIET PHYSICS SEMICONDUCTORS-USSR//STARODUBTSEV PHYSICOTECH
8 3264 SOLAR CELLS//SOLID-STATE ELECTRONICS//OPEN CIRCUIT VOLTAGE DECAY OCVD
9 1299 SIGE//STRAINED SI//VIRTUAL SUBSTRATE
10 603 JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING

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