Class information for:
Level 2: JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
603 14085 18.3 58%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
603 2             JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING 14085
1145 1                   EL2//GAAS//SEMI INSULATING GAAS 2820
1618 1                   JOURNAL OF CRYSTAL GROWTH//TRIMETHYLINDIUM//MOMBE 2566
6921 1                   MEV ION IMPLANTATION//COLD IMPLANTS//ELECTRON ANNEALING 1429
7233 1                   QUANTUM WELL INTERMIXING//QUANTUM WELL INTERDIFFUSION//IMPURITY FREE VACANCY DISORDERING 1391
7474 1                   DX CENTERS//DX CENTRES//PERSISTENT PHOTOEFFECTS 1363
11678 1                   CARBON DOPING//CBR4//INALAS ALLOYS 963
14532 1                   SELECTIVE AREA GROWTH//SELECTIVE EPITAXY//TERTIARYBUTYLCHLORIDE 764
14548 1                   SEMI INSULATING//SEMI INSULATING INP//MAT COMPONENTS S 763
14797 1                   GA AS BI SOLUTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//ABZU 750
22781 1                   DEFECTS IN INP//FIR PC//HEAVILY DOPED N GAAS 369
23027 1                   ACCEPTOR DIFFUSION//CHEM PHYS LUCAS HTS S//ZINC DIFFUSION 361
25791 1                   TEXTURED INTERFACE//MICRORELIEF INTERFACE//BEIJING CONDENSD MATTER PHYS 272
28325 1                   OVAL DEFECTS//INDIRECT GAP ALGAAS EPILAYERS//SEEIE 209
37143 1                   DAP AND BAND BAND RECOMBINATION//NINSB NPBTE NCDTE ISOTYPE STRUCTURE//NINSB NPBTE NCDTE STRUCTURE 65

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 JOURNAL OF CRYSTAL GROWTH journal 223720 13% 6% 1794
2 PHYSICS, APPLIED WoSSC 120236 59% 1% 8270
3 QUANTUM WELL INTERMIXING authKW 102308 0% 71% 67
4 GAAS authKW 99062 3% 12% 372
5 DX CENTERS authKW 66637 0% 63% 49
6 JOURNAL OF APPLIED PHYSICS journal 59790 12% 2% 1734
7 INP authKW 57456 1% 15% 182
8 ALGAAS authKW 53235 1% 26% 93
9 APPLIED PHYSICS LETTERS journal 45978 11% 1% 1554
10 SELECTIVE AREA GROWTH authKW 44695 0% 34% 61

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 120236 59% 1% 8270
2 Crystallography 37745 14% 1% 2030
3 Physics, Condensed Matter 23148 23% 0% 3188
4 Materials Science, Multidisciplinary 18687 27% 0% 3872
5 Engineering, Electrical & Electronic 7487 16% 0% 2210
6 Materials Science, Coatings & Films 4382 4% 0% 629
7 Physics, Multidisciplinary 2444 8% 0% 1088
8 Nuclear Science & Technology 940 3% 0% 447
9 Instruments & Instrumentation 858 3% 0% 468
10 Physics, Nuclear 438 2% 0% 350

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SENDAI 15617 0% 33% 22
2 MASPEC 13316 0% 15% 41
3 OMVPE IL 6929 0% 80% 4
4 ELE OPHOTON MAT DEVICES 6562 0% 20% 15
5 MAT COMPONENTS S 6498 0% 100% 3
6 ELECT MAT ENGN 5786 1% 4% 73
7 QUANTUM SEMICOND PHOTON BASED BIONANOTECHNO 5298 0% 35% 7
8 HEBEI SEMICOND 4872 0% 75% 3
9 ARTIFICIAL SEMICOND MAT 4332 0% 100% 2
10 CHEM PHYS LUCAS HTS S 4332 0% 100% 2

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 JOURNAL OF CRYSTAL GROWTH 223720 13% 6% 1794
2 JOURNAL OF APPLIED PHYSICS 59790 12% 2% 1734
3 APPLIED PHYSICS LETTERS 45978 11% 1% 1554
4 JOURNAL OF ELECTRONIC MATERIALS 38741 3% 4% 420
5 INSTITUTE OF PHYSICS CONFERENCE SERIES 37305 3% 4% 413
6 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27203 2% 4% 319
7 SOVIET PHYSICS SEMICONDUCTORS-USSR 26651 2% 5% 264
8 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 22213 3% 3% 355
9 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 12271 1% 3% 207
10 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 6652 2% 1% 320

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 QUANTUM WELL INTERMIXING 102308 0% 71% 67 Search QUANTUM+WELL+INTERMIXING Search QUANTUM+WELL+INTERMIXING
2 GAAS 99062 3% 12% 372 Search GAAS Search GAAS
3 DX CENTERS 66637 0% 63% 49 Search DX+CENTERS Search DX+CENTERS
4 INP 57456 1% 15% 182 Search INP Search INP
5 ALGAAS 53235 1% 26% 93 Search ALGAAS Search ALGAAS
6 SELECTIVE AREA GROWTH 44695 0% 34% 61 Search SELECTIVE+AREA+GROWTH Search SELECTIVE+AREA+GROWTH
7 EL2 43299 0% 67% 30 Search EL2 Search EL2
8 MOMBE 41236 0% 41% 46 Search MOMBE Search MOMBE
9 TRIMETHYLINDIUM 27913 0% 68% 19 Search TRIMETHYLINDIUM Search TRIMETHYLINDIUM
10 GALLIUM ARSENIDE 21015 1% 7% 151 Search GALLIUM+ARSENIDE Search GALLIUM+ARSENIDE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 HARRISON, I , (1993) IMPURITY-INDUCED DISORDERING IN III-V MULTIQUANTUM WELLS AND SUPERLATTICES.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 4. ISSUE 1. P. 1-28 142 94% 18
2 BOURGOIN, JC , VONBARDELEBEN, HJ , STIEVENARD, D , (1988) NATIVE DEFECTS IN GALLIUM-ARSENIDE.JOURNAL OF APPLIED PHYSICS. VOL. 64. ISSUE 9. P. R65-R91 143 89% 223
3 DEPPE, DG , HOLONYAK, N , (1988) ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 64. ISSUE 12. P. R93-R113 109 96% 324
4 MOONEY, PM , (1990) DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS.JOURNAL OF APPLIED PHYSICS. VOL. 67. ISSUE 3. P. R1-R26 91 88% 564
5 MAKITA, Y , (1996) NOVEL FEATURES OF PHOTOLUMINESCENCE SPECTRA FROM ACCEPTOR-DOPED GAAS: FORMATION OF ACCEPTOR-ACCEPTOR PAIR EMISSIONS AND OPTICAL COMPENSATION EFFECT.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 16. ISSUE 6-8. P. 265-398 123 85% 8
6 PEARTON, SJ , (1993) ION-IMPLANTATION IN III-V SEMICONDUCTOR TECHNOLOGY.INTERNATIONAL JOURNAL OF MODERN PHYSICS B. VOL. 7. ISSUE 28. P. 4687 -4761 116 83% 60
7 LIND, AG , ALDRIDGE, HL , HATEM, C , LAW, ME , JONES, KS , (2016) REVIEW-DOPANT SELECTION CONSIDERATIONS AND EQUILIBRIUM THERMAL PROCESSING LIMITS FOR N(+)-IN(0.)53GA(0.47)AS.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 5. ISSUE 5. P. Q125 -Q131 69 70% 1
8 SMITH, FTJ , (1989) LOW-PRESSURE ORGANOMETALLIC EPITAXY OF THE III-V-COMPOUNDS.PROGRESS IN SOLID STATE CHEMISTRY. VOL. 19. ISSUE 2. P. 111-164 144 83% 4
9 PAVESI, L , GUZZI, M , (1994) PHOTOLUMINESCENCE OF ALXGA1-XAS ALLOYS.JOURNAL OF APPLIED PHYSICS. VOL. 75. ISSUE 10. P. 4779 -4842 115 53% 357
10 MANASREH, MO , FISCHER, DW , MITCHEL, WC , (1989) THE EL2 DEFECT IN GAAS - SOME RECENT DEVELOPMENTS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 154. ISSUE 1. P. 11-41 108 96% 61

Classes with closest relation at Level 2


Rank Class id link
1 4090 MAGNET SENSOR//SOVIET PHYSICS SEMICONDUCTORS-USSR//RADIATION RESISTANT HALL SENSORS
2 3506 RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY
3 2384 IR LASERS//OPT SENSORS SPECT//SOVIET PHYSICS SEMICONDUCTORS-USSR
4 247 GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES
5 3783 LIQUID PHASE EPITAXY//MICROCHANNEL EPITAXY//ELECTROEPITAXY
6 1210 GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY
7 579 IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC
8 1699 HETEROJUNCTION BIPOLAR TRANSISTORS//SIGEHBT//HBT
9 648 OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING
10 372 SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//VERTICAL CAVITY SURFACE EMITTING LASERS

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