Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
4246 | 1821 | 21.4 | 51% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
648 | 2 | OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING | 13601 |
4246 | 1 | GETTERING//DLTS//GETTERING EFFICIENCY | 1821 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GETTERING | authKW | 148501 | 3% | 18% | 48 |
2 | DLTS | authKW | 105455 | 4% | 10% | 65 |
3 | GETTERING EFFICIENCY | authKW | 91282 | 0% | 78% | 7 |
4 | SI AU | authKW | 86227 | 0% | 86% | 6 |
5 | SUBSTITUTIONAL FE | authKW | 53652 | 0% | 80% | 4 |
6 | FE DEFECTS | authKW | 50300 | 0% | 100% | 3 |
7 | GOLD IN SILICON | authKW | 50300 | 0% | 100% | 3 |
8 | IRON RELATED DEFECTS | authKW | 50300 | 0% | 100% | 3 |
9 | MN AND FE IN SILICON | authKW | 50300 | 0% | 100% | 3 |
10 | PHOTOLUMINESCENCE CU CENTER | authKW | 50300 | 0% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 13301 | 45% | 0% | 819 |
2 | Physics, Applied | 9164 | 46% | 0% | 836 |
3 | Materials Science, Multidisciplinary | 1615 | 23% | 0% | 423 |
4 | Materials Science, Coatings & Films | 1129 | 6% | 0% | 111 |
5 | Electrochemistry | 624 | 6% | 0% | 101 |
6 | Physics, Multidisciplinary | 224 | 7% | 0% | 124 |
7 | Engineering, Electrical & Electronic | 157 | 8% | 0% | 148 |
8 | Physics, Nuclear | 38 | 2% | 0% | 40 |
9 | Nuclear Science & Technology | 32 | 2% | 0% | 37 |
10 | Physics, Atomic, Molecular & Chemical | 13 | 2% | 0% | 45 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ICHHPS | 34925 | 0% | 42% | 5 |
2 | ABT RD CM | 16767 | 0% | 100% | 1 |
3 | BUSINESS STRATEG TECHNOL | 16767 | 0% | 100% | 1 |
4 | BUSINESS UNIT POLYSILICON | 16767 | 0% | 100% | 1 |
5 | CORP FRONT END | 16767 | 0% | 100% | 1 |
6 | DPT ZT KM6 | 16767 | 0% | 100% | 1 |
7 | ELECT DEVICES MAT CHARACTERIZAT GRP | 16767 | 0% | 100% | 1 |
8 | EPI BUSINESS UNIT | 16767 | 0% | 100% | 1 |
9 | FAB MAT OPERAT | 16767 | 0% | 100% | 1 |
10 | GOI TASK FORCE | 16767 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID STATE PHENOMENA | 17482 | 3% | 2% | 48 |
2 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 8541 | 6% | 1% | 102 |
3 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 7068 | 3% | 1% | 56 |
4 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 6853 | 3% | 1% | 48 |
5 | JOURNAL OF APPLIED PHYSICS | 6174 | 11% | 0% | 201 |
6 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 5456 | 5% | 0% | 100 |
7 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 3275 | 4% | 0% | 79 |
8 | PHYSICA B-CONDENSED MATTER | 2948 | 4% | 0% | 75 |
9 | APPLIED PHYSICS LETTERS | 2599 | 7% | 0% | 135 |
10 | PHYSICAL REVIEW B | 2537 | 9% | 0% | 165 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GETTERING | 148501 | 3% | 18% | 48 | Search GETTERING | Search GETTERING |
2 | DLTS | 105455 | 4% | 10% | 65 | Search DLTS | Search DLTS |
3 | GETTERING EFFICIENCY | 91282 | 0% | 78% | 7 | Search GETTERING+EFFICIENCY | Search GETTERING+EFFICIENCY |
4 | SI AU | 86227 | 0% | 86% | 6 | Search SI+AU | Search SI+AU |
5 | SUBSTITUTIONAL FE | 53652 | 0% | 80% | 4 | Search SUBSTITUTIONAL+FE | Search SUBSTITUTIONAL+FE |
6 | FE DEFECTS | 50300 | 0% | 100% | 3 | Search FE+DEFECTS | Search FE+DEFECTS |
7 | GOLD IN SILICON | 50300 | 0% | 100% | 3 | Search GOLD+IN+SILICON | Search GOLD+IN+SILICON |
8 | IRON RELATED DEFECTS | 50300 | 0% | 100% | 3 | Search IRON+RELATED+DEFECTS | Search IRON+RELATED+DEFECTS |
9 | MN AND FE IN SILICON | 50300 | 0% | 100% | 3 | Search MN+AND+FE+IN+SILICON | Search MN+AND+FE+IN+SILICON |
10 | PHOTOLUMINESCENCE CU CENTER | 50300 | 0% | 100% | 3 | Search PHOTOLUMINESCENCE+CU+CENTER | Search PHOTOLUMINESCENCE+CU+CENTER |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ISTRATOV, AA , HIESLMAIR, H , WEBER, ER , (1999) IRON AND ITS COMPLEXES IN SILICON.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 69. ISSUE 1. P. 13 -44 | 192 | 87% | 338 |
2 | STEGER, M , YANG, A , SEKIGUCHI, T , SAEEDI, K , THEWALT, MLW , HENRY, MO , JOHNSTON, K , RIEMANN, H , ABROSIMOV, NV , CHURBANOV, MF , ET AL (2011) PHOTOLUMINESCENCE OF DEEP DEFECTS INVOLVING TRANSITION METALS IN SI: NEW INSIGHTS FROM HIGHLY ENRICHED SI-28.JOURNAL OF APPLIED PHYSICS. VOL. 110. ISSUE 8. P. - | 96 | 83% | 15 |
3 | KNACK, S , (2004) COPPER-RELATED DEFECTS IN SILICON.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 7. ISSUE 3. P. 125 -141 | 83 | 80% | 14 |
4 | LINDROOS, J , SAVIN, H , (2016) REVIEW OF LIGHT-INDUCED DEGRADATION IN CRYSTALLINE SILICON SOLAR CELLS.SOLAR ENERGY MATERIALS AND SOLAR CELLS. VOL. 147. ISSUE . P. 115 -126 | 62 | 56% | 6 |
5 | ISTRATOV, AA , WEBER, ER , (1998) ELECTRICAL PROPERTIES AND RECOMBINATION ACTIVITY OF COPPER, NICKEL AND COBALT IN SILICON.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 66. ISSUE 2. P. 123 -136 | 98 | 57% | 186 |
6 | ISTRATOV, AA , HIESLMAIR, H , WEBER, ER , (2000) IRON CONTAMINATION IN SILICON TECHNOLOGY.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 70. ISSUE 5. P. 489 -534 | 137 | 33% | 192 |
7 | SANATI, M , SZWACKI, NG , ESTREICHER, SK , (2007) INTERSTITIAL FE IN SI AND ITS INTERACTIONS WITH HYDROGEN AND SHALLOW DOPANTS.PHYSICAL REVIEW B. VOL. 76. ISSUE 12. P. - | 61 | 72% | 22 |
8 | ISTRATOV, AA , WEBER, ER , (2002) PHYSICS OF COPPER IN SILICON.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 149. ISSUE 1. P. G21 -G30 | 77 | 52% | 221 |
9 | HUY, PT , AMMERLAAN, CAJ , (2002) MAGNETIC RESONANCE INVESTIGATION OF GOLD-DOPED AND GOLD-HYDROGEN-DOPED SILICON.PHYSICAL REVIEW B. VOL. 66. ISSUE 16. P. - | 45 | 98% | 6 |
10 | KITAGAWA, H , (2000) DIFFUSION AND ELECTRICAL PROPERTIES OF 3D TRANSITION-METAL IMPURITIES IN SILICON.SOLID STATE PHENOMENA. VOL. 71. ISSUE . P. 51 -72 | 53 | 85% | 12 |
Classes with closest relation at Level 1 |