Class information for:
Level 1: SIMOX//CONTACTLESS I V METHOD//BURIED OXIDE LAYER

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
12826 878 16.7 51%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
648 2             OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING 13601
12826 1                   SIMOX//CONTACTLESS I V METHOD//BURIED OXIDE LAYER 878

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SIMOX authKW 391172 5% 25% 45
2 CONTACTLESS I V METHOD authKW 104331 0% 100% 3
3 BURIED OXIDE LAYER authKW 104325 1% 50% 6
4 BURIED OXIDE authKW 72215 1% 23% 9
5 ELECT COMMUN S ATSUGI S address 69554 0% 100% 2
6 INTERNAL THERMAL OXIDATION authKW 69554 0% 100% 2
7 SEPARATION BY IMPLANTED OXYGEN MATERIALS authKW 69554 0% 100% 2
8 SIMOX PROCESS authKW 69554 0% 100% 2
9 SELF IMPLANTATION authKW 52162 0% 50% 3
10 HF DEFECT authKW 46368 0% 67% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 4980 49% 0% 426
2 Nuclear Science & Technology 4556 22% 0% 189
3 Instruments & Instrumentation 3509 20% 0% 178
4 Physics, Nuclear 3099 18% 0% 160
5 Physics, Atomic, Molecular & Chemical 1749 18% 0% 162
6 Materials Science, Coatings & Films 1324 9% 0% 81
7 Physics, Condensed Matter 1198 21% 0% 183
8 Engineering, Electrical & Electronic 652 18% 0% 158
9 Materials Science, Multidisciplinary 411 18% 0% 158
10 Electrochemistry 129 4% 0% 34

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELECT COMMUN S ATSUGI S 69554 0% 100% 2
2 CHEM TECH ANALYT GETREIDEMKT 34777 0% 100% 1
3 CONSUMER SYST 34777 0% 100% 1
4 DTO FIS MAT CONDENSADA CRISTALOG MINERAL 34777 0% 100% 1
5 INTRO BEAM TECHNOL MAT MODIFICAT 34777 0% 100% 1
6 ION BEAM SYST 34777 0% 100% 1
7 IONSTRAHLPHYS MATERIALFOR 34777 0% 100% 1
8 MICROELE PROC 34777 0% 100% 1
9 RONTGENBEUGUNG ICHTSYSTEMEN 34777 0% 100% 1
10 SHANGHAI QINGPU BRANCH 34777 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 27825 18% 1% 159
2 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 8693 5% 1% 43
3 VACUUM 3707 4% 0% 32
4 GEC-JOURNAL OF SCIENCE & TECHNOLOGY 3160 0% 9% 1
5 IEEE CIRCUITS AND DEVICES MAGAZINE 2230 0% 2% 3
6 APPLIED PHYSICS LETTERS 2134 10% 0% 84
7 RADIATION EFFECTS AND DEFECTS IN SOLIDS 1662 2% 0% 15
8 JOURNAL OF APPLIED PHYSICS 1298 7% 0% 65
9 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 1212 4% 0% 33
10 MICROELECTRONIC ENGINEERING 1207 2% 0% 19

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SIMOX 391172 5% 25% 45 Search SIMOX Search SIMOX
2 CONTACTLESS I V METHOD 104331 0% 100% 3 Search CONTACTLESS+I+V+METHOD Search CONTACTLESS+I+V+METHOD
3 BURIED OXIDE LAYER 104325 1% 50% 6 Search BURIED+OXIDE+LAYER Search BURIED+OXIDE+LAYER
4 BURIED OXIDE 72215 1% 23% 9 Search BURIED+OXIDE Search BURIED+OXIDE
5 INTERNAL THERMAL OXIDATION 69554 0% 100% 2 Search INTERNAL+THERMAL+OXIDATION Search INTERNAL+THERMAL+OXIDATION
6 SEPARATION BY IMPLANTED OXYGEN MATERIALS 69554 0% 100% 2 Search SEPARATION+BY+IMPLANTED+OXYGEN+MATERIALS Search SEPARATION+BY+IMPLANTED+OXYGEN+MATERIALS
7 SIMOX PROCESS 69554 0% 100% 2 Search SIMOX+PROCESS Search SIMOX+PROCESS
8 SELF IMPLANTATION 52162 0% 50% 3 Search SELF+IMPLANTATION Search SELF+IMPLANTATION
9 HF DEFECT 46368 0% 67% 2 Search HF+DEFECT Search HF+DEFECT
10 15 30 KEV 34777 0% 100% 1 Search 15+30+KEV Search 15+30+KEV

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 IBRAHIM, AM , BEREZIN, AA , (1992) SYNTHESIS OF BURIED INSULATING LAYERS IN SILICON BY ION-IMPLANTATION.MATERIALS CHEMISTRY AND PHYSICS. VOL. 31. ISSUE 4. P. 285 -300 72 79% 1
2 HOSHINO, Y , YACHIDA, G , INOUE, K , TOYOHARA, T , NAKATA, J , (2016) A NOVEL MECHANISM OF ULTRATHIN SOI SYNTHESIS BY EXTREMELY LOW-ENERGY HOT O+ IMPLANTATION.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 49. ISSUE 31. P. - 31 54% 0
3 KOGLER, R , OU, X , SKORUPA, W , MOLLER, W , (2008) THE ROLE OF IMPLANTATION-INDUCED POINT DEFECTS FOR THE REDISTRIBUTION OF OXYGEN IN SILICON AT HIGH-TEMPERATURE PROCESSING.JOURNAL OF APPLIED PHYSICS. VOL. 104. ISSUE 10. P. - 23 77% 2
4 KOGLER, R , OU, X , SKORUPA, W , MOLLER, W , (2008) THE ORIGIN OF THE ENERGY-DOSE WINDOW IN SEPARATION-BY-IMPLANTED-OXYGEN MATERIALS PROCESSING.APPLIED PHYSICS LETTERS. VOL. 92. ISSUE 18. P. - 18 78% 3
5 HOSHINO, Y , YACHIDA, G , INOUE, K , TOYOHARA, T , NAKATA, J , (2016) DIRECT SYNTHESIS OF ULTRATHIN SOI STRUCTURE BY EXTREMELY LOW-ENERGY OXYGEN IMPLANTATION.AIP ADVANCES. VOL. 6. ISSUE 6. P. - 18 64% 0
6 YOSHINO, A , KASAMA, K , (1998) REDISTRIBUTION PROCESS OF OXYGEN ATOMS IN SEPARATION-BY-IMPLANTED-OXYGEN (SIMOX) SUBSTRATES.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 37. ISSUE 2. P. 471-478 21 88% 6
7 JEOUNG, JS , ANDERSON, P , SERAPHIN, S , (2003) MICROSTRUCTURAL EVOLUTION OF LOW-DOSE SEPARATION BY IMPLANTED OXYGEN MATERIALS IMPLANTED AT 65 AND 100 KEV.JOURNAL OF MATERIALS RESEARCH. VOL. 18. ISSUE 9. P. 2177-2187 16 94% 1
8 TAMURA, M , ISHIMARU, M , HINODE, K , TOKIGUCHI, K , SEKI, H , MORI, H , (2006) ANNEALING EFFECT ON STRUCTURAL DEFECTS IN LOW-DOSE SEPARATION-BY-IMPLANTED-OXYGEN WAFERS.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 45. ISSUE 10A. P. 7592 -7599 19 66% 6
9 JAGER, HU , (1992) MODELING OF THE FORMATION OF BURIED DIELECTRIC LAYERS BY ION-IMPLANTATION.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 65. ISSUE 1-4. P. 67-72 21 91% 4
10 WEI, X , XUE, ZY , WU, AM , WANG, X , LI, XY , YE, F , CHEN, J , CHEN, M , ZHANG, B , LIN, CL , ET AL (2011) INVESTIGATION OF SILICON ON INSULATOR FABRICATED BY TWO-STEP O+ IMPLANTATION.CHINESE SCIENCE BULLETIN. VOL. 56. ISSUE 4-5. P. 444 -448 13 76% 0

Classes with closest relation at Level 1


Rank Class id link
1 26620 ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS
2 11988 SMART CUT//ION CUT//GETTERING
3 32348 EFFECTIVE MEDIUM ANALYSIS EMA//ETCH RATE PROFILE//ETCH RATE PROFILING
4 31721 GLASS BEAD DESTRUCTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//STATE TORAT
5 31301 BILINEAR TRANSFORMED REFLECTANCE//DOPING RESTRUCTURING MODEL//GLOBAL NUCL FUTURE INITIAT
6 30345 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL
7 11862 NANOOPT PROPERTY//SPECTROSCOPIC ELLIPSOMETRY//DIELECTRIC FUNCTION
8 2169 IEEE TRANSACTIONS ON NUCLEAR SCIENCE//TOTAL IONIZING DOSE//OXIDE TRAPPED CHARGE
9 23350 EPITAXIAL AL2O3//AL2O3 ON SI//DENVER AEROSP TECH OPERAT
10 1673 OXYGEN PRECIPITATION//CZOCHRALSKI SILICON//OXYGEN PRECIPITATES

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