Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
6817 | 1441 | 18.6 | 45% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
648 | 2 | OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING | 13601 |
6817 | 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR//LIFETIME CONTROL//DLTS | 1441 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | journal | 249264 | 18% | 5% | 256 |
2 | LIFETIME CONTROL | authKW | 218529 | 1% | 54% | 19 |
3 | DLTS | authKW | 117390 | 4% | 9% | 61 |
4 | LAPLACE DLTS | authKW | 78464 | 1% | 37% | 10 |
5 | SOLID STATE PHYS SECT | address | 73056 | 2% | 10% | 34 |
6 | POWER DIODE | authKW | 69195 | 1% | 23% | 14 |
7 | 88 K HYDROGEN IMPLANTATION | authKW | 63566 | 0% | 100% | 3 |
8 | RADIATION DEFECTS | authKW | 53960 | 2% | 11% | 24 |
9 | LOCAL LIFETIME CONTROL | authKW | 48428 | 0% | 57% | 4 |
10 | DEGRADATION OF PERFORMANCE | authKW | 47673 | 0% | 75% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 17661 | 58% | 0% | 829 |
2 | Physics, Applied | 3158 | 32% | 0% | 454 |
3 | Nuclear Science & Technology | 1358 | 10% | 0% | 139 |
4 | Materials Science, Multidisciplinary | 679 | 18% | 0% | 260 |
5 | Instruments & Instrumentation | 542 | 7% | 0% | 99 |
6 | Physics, Nuclear | 529 | 6% | 0% | 93 |
7 | Engineering, Electrical & Electronic | 291 | 11% | 0% | 156 |
8 | Physics, Atomic, Molecular & Chemical | 255 | 7% | 0% | 94 |
9 | Physics, Multidisciplinary | 94 | 5% | 0% | 79 |
10 | Physics, Fluids & Plasmas | 41 | 2% | 0% | 27 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID STATE PHYS SECT | 73056 | 2% | 10% | 34 |
2 | PHYS PHYS ELECT | 43733 | 1% | 26% | 8 |
3 | CRMR2 | 42377 | 0% | 100% | 2 |
4 | PHYS PLICAT SEMICOND | 31153 | 0% | 29% | 5 |
5 | FLEROV NUCL REACT DUBNA | 28250 | 0% | 67% | 2 |
6 | SCI PRACT MAT | 27902 | 2% | 6% | 22 |
7 | ELECT MAT DEVICES NANOSTRUCT | 24597 | 0% | 19% | 6 |
8 | ABT STRUKTURUNTERSUCHUNGEN | 21189 | 0% | 100% | 1 |
9 | AUTOMOT IND MULTIMARKET POWER MANAGEMENT DR | 21189 | 0% | 100% | 1 |
10 | CNISM SEZ TORINO PHYS | 21189 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 249264 | 18% | 5% | 256 |
2 | SEMICONDUCTORS | 24834 | 6% | 1% | 89 |
3 | SOLID STATE PHENOMENA | 6974 | 2% | 1% | 27 |
4 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 5825 | 5% | 0% | 75 |
5 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 4619 | 6% | 0% | 84 |
6 | PHYSICA B-CONDENSED MATTER | 3082 | 5% | 0% | 68 |
7 | RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2813 | 2% | 1% | 25 |
8 | JOURNAL OF APPLIED PHYSICS | 2102 | 7% | 0% | 106 |
9 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2041 | 2% | 0% | 28 |
10 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1485 | 2% | 0% | 23 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | LIFETIME CONTROL | 218529 | 1% | 54% | 19 | Search LIFETIME+CONTROL | Search LIFETIME+CONTROL |
2 | DLTS | 117390 | 4% | 9% | 61 | Search DLTS | Search DLTS |
3 | LAPLACE DLTS | 78464 | 1% | 37% | 10 | Search LAPLACE+DLTS | Search LAPLACE+DLTS |
4 | POWER DIODE | 69195 | 1% | 23% | 14 | Search POWER+DIODE | Search POWER+DIODE |
5 | 88 K HYDROGEN IMPLANTATION | 63566 | 0% | 100% | 3 | Search 88+K+HYDROGEN+IMPLANTATION | Search 88+K+HYDROGEN+IMPLANTATION |
6 | RADIATION DEFECTS | 53960 | 2% | 11% | 24 | Search RADIATION+DEFECTS | Search RADIATION+DEFECTS |
7 | LOCAL LIFETIME CONTROL | 48428 | 0% | 57% | 4 | Search LOCAL+LIFETIME+CONTROL | Search LOCAL+LIFETIME+CONTROL |
8 | DEGRADATION OF PERFORMANCE | 47673 | 0% | 75% | 3 | Search DEGRADATION+OF+PERFORMANCE | Search DEGRADATION+OF+PERFORMANCE |
9 | HIGH TEMPERATURE ELECTRON IRRADIATION | 47673 | 0% | 75% | 3 | Search HIGH+TEMPERATURE+ELECTRON+IRRADIATION | Search HIGH+TEMPERATURE+ELECTRON+IRRADIATION |
10 | TRIVACANCY | 47673 | 0% | 75% | 3 | Search TRIVACANCY | Search TRIVACANCY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | LONDOS, CA , SGOUROU, EN , HALL, D , CHRONEOS, A , (2014) VACANCY-OXYGEN DEFECTS IN SILICON: THE IMPACT OF ISOVALENT DOPING.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 25. ISSUE 6. P. 2395 -2410 | 59 | 38% | 6 |
2 | LONDOS, CA , SGOUROU, EN , TIMERKAEVA, D , CHRONEOS, A , POCHET, P , EMTSEV, VV , (2013) IMPACT OF ISOVALENT DOPING ON RADIATION DEFECTS IN SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 114. ISSUE 11. P. - | 32 | 70% | 1 |
3 | ANGELETOS, T , SGOUROU, EN , CHRONEOS, A , LONDOS, CA , (2015) ENGINEERING VO, CIOI AND CICS DEFECTS IN IRRADIATED SI THROUGH GE AND PB DOPING.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 26. ISSUE 4. P. 2248 -2256 | 28 | 74% | 0 |
4 | ANGELETOS, T , CHRONEOS, A , LONDOS, CA , (2016) INFRARED STUDIES OF THE EVOLUTION OF THE CIOI(SI-I) DEFECT IN IRRADIATED SI UPON ISOTHERMAL ANNEALS.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 12. P. - | 25 | 78% | 0 |
5 | CHRONEOS, A , SGOUROU, EN , LONDOS, CA , SCHWINGENSCHLOGL, U , (2015) OXYGEN DEFECT PROCESSES IN SILICON AND SILICON GERMANIUM.APPLIED PHYSICS REVIEWS. VOL. 2. ISSUE 2. P. - | 54 | 34% | 5 |
6 | CHRISTOPOULOS, SRG , PARFITT, DC , SGOUROU, EN , LONDOS, CA , VOVK, RV , CHRONEOS, A , (2016) RELATIVE CONCENTRATIONS OF CARBON RELATED DEFECTS IN SILICON.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 27. ISSUE 11. P. 11268 -11272 | 28 | 62% | 0 |
7 | LONDOS, CA , SGOUROU, EN , CHRONEOS, A , (2013) IMPACT OF ISOVALENT DEFECT ENGINEERING STRATEGIES ON CARBON-RELATED CLUSTERS IN SILICON.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 24. ISSUE 5. P. 1696-1701 | 22 | 81% | 1 |
8 | PELLEGRINO, P , LEVEQUE, P , LALITA, J , HALLEN, A , JAGADISH, C , SVENSSON, BG , (2001) ANNEALING KINETICS OF VACANCY-RELATED DEFECTS IN LOW-DOSE MEV SELF-ION-IMPLANTED N-TYPE SILICON.PHYSICAL REVIEW B. VOL. 64. ISSUE 19. P. - | 33 | 69% | 55 |
9 | LONDOS, CA , SGOUROU, EN , CHRONEOS, A , (2014) OXYGEN-VACANCY DEFECTS IN ELECTRON-IRRADIATED SI: THE ROLE OF CARBON IN THEIR BEHAVIOR.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 25. ISSUE 2. P. 914-921 | 26 | 65% | 0 |
10 | CHRONEOS, A , LONDOS, CA , SGOUROU, EN , (2011) EFFECT OF TIN DOPING ON OXYGEN- AND CARBON-RELATED DEFECTS IN CZOCHRALSKI SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 110. ISSUE 9. P. - | 29 | 55% | 8 |
Classes with closest relation at Level 1 |