Class information for:
Level 1: OXYGEN PRECIPITATION//CZOCHRALSKI SILICON//OXYGEN PRECIPITATES

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
1673 2543 20.2 51%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
648 2             OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING 13601
1673 1                   OXYGEN PRECIPITATION//CZOCHRALSKI SILICON//OXYGEN PRECIPITATES 2543

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 OXYGEN PRECIPITATION authKW 784023 3% 82% 80
2 CZOCHRALSKI SILICON authKW 533100 3% 61% 73
3 OXYGEN PRECIPITATES authKW 528211 3% 67% 66
4 GROWN IN DEFECTS authKW 500225 2% 83% 50
5 THERMAL DONORS authKW 459535 3% 60% 64
6 OXIDE PRECIPITATE authKW 165585 1% 69% 20
7 CZ SILICON authKW 158757 1% 58% 23
8 CRYSTAL ORIGINATED PARTICLE authKW 156075 1% 100% 13
9 OSF RING authKW 156075 1% 100% 13
10 SHALLOW THERMAL DONOR authKW 132064 0% 100% 11

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 16925 52% 0% 1329
2 Physics, Condensed Matter 10956 35% 0% 893
3 Materials Science, Multidisciplinary 4538 31% 0% 794
4 Materials Science, Coatings & Films 3124 8% 0% 213
5 Crystallography 2291 9% 0% 220
6 Electrochemistry 1944 8% 0% 202
7 Physics, Multidisciplinary 241 6% 0% 158
8 Engineering, Electrical & Electronic 234 8% 0% 211
9 Metallurgy & Metallurgical Engineering 36 2% 0% 58
10 COMPUTER APPLICATIONS & CYBERNETICS 36 0% 0% 3

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEH ISOBE RD 96841 0% 73% 11
2 SITIX 85750 0% 71% 10
3 RIAST 69246 1% 38% 15
4 STATE SILICON MAT 57258 6% 3% 148
5 QUANTITAT SILICON 48023 0% 100% 4
6 SILICON MFG ENGN SUB 48023 0% 100% 4
7 SIMULAT PART 48019 0% 67% 6
8 INFORMAT FUNCT MAT 40006 0% 33% 10
9 NINGBO FREE TRADE ZONE 36017 0% 100% 3
10 STATE SILICON MAT SCI 34081 1% 20% 14

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SOLID STATE PHENOMENA 60020 4% 5% 105
2 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 15321 8% 1% 197
3 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 10700 5% 1% 135
4 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 10594 3% 1% 81
5 JOURNAL OF CRYSTAL GROWTH 10195 6% 1% 164
6 JOURNAL OF APPLIED PHYSICS 8264 11% 0% 275
7 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 4979 5% 0% 115
8 SOVIET PHYSICS SEMICONDUCTORS-USSR 4880 2% 1% 48
9 SOLID STATE TECHNOLOGY 4678 1% 1% 27
10 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 4159 1% 1% 34

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 OXYGEN PRECIPITATION 784023 3% 82% 80 Search OXYGEN+PRECIPITATION Search OXYGEN+PRECIPITATION
2 CZOCHRALSKI SILICON 533100 3% 61% 73 Search CZOCHRALSKI+SILICON Search CZOCHRALSKI+SILICON
3 OXYGEN PRECIPITATES 528211 3% 67% 66 Search OXYGEN+PRECIPITATES Search OXYGEN+PRECIPITATES
4 GROWN IN DEFECTS 500225 2% 83% 50 Search GROWN+IN+DEFECTS Search GROWN+IN+DEFECTS
5 THERMAL DONORS 459535 3% 60% 64 Search THERMAL+DONORS Search THERMAL+DONORS
6 OXIDE PRECIPITATE 165585 1% 69% 20 Search OXIDE+PRECIPITATE Search OXIDE+PRECIPITATE
7 CZ SILICON 158757 1% 58% 23 Search CZ+SILICON Search CZ+SILICON
8 CRYSTAL ORIGINATED PARTICLE 156075 1% 100% 13 Search CRYSTAL+ORIGINATED+PARTICLE Search CRYSTAL+ORIGINATED+PARTICLE
9 OSF RING 156075 1% 100% 13 Search OSF+RING Search OSF+RING
10 SHALLOW THERMAL DONOR 132064 0% 100% 11 Search SHALLOW+THERMAL+DONOR Search SHALLOW+THERMAL+DONOR

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 PIVAC, B , SASSELLA, A , STELLA, A , BORGHESI, A , (1995) OXYGEN PRECIPITATION IN SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 77. ISSUE 9. P. 4169 -4244 172 83% 363
2 YU, XG , CHEN, JH , MA, XY , YANG, DR , (2013) IMPURITY ENGINEERING OF CZOCHRALSKI SILICON.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 74. ISSUE 1-2. P. 1 -33 153 78% 10
3 ALT, HC , WAGNER, HE , (2009) THERMAL STABILITY AND VIBRATIONAL SPECTROSCOPY OF N-O SHALLOW DONOR CENTERS IN SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 10. P. - 47 96% 4
4 YANG, DR , YU, XG , (2004) NITROGEN IN SILICON.DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII. VOL. 230. ISSUE . P. 199 -220 52 98% 4
5 NEWMAN, RC , (2000) OXYGEN DIFFUSION AND PRECIPITATION IN CZOCHRALSKI SILICON.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 12. ISSUE 25. P. R335 -R365 61 73% 114
6 TALANIN, VI , TALANIN, IE , (2016) DIFFUSION MODEL OF THE FORMATION OF GROWTH MICRODEFECTS: A NEW APPROACH TO DEFECT FORMATION IN CRYSTALS (REVIEW).PHYSICS OF THE SOLID STATE. VOL. 58. ISSUE 3. P. 427 -437 39 83% 0
7 ZHANG, XP , MA, XY , YANG, DR , VANHELLEMONT, J , (2013) SCANNING INFRARED MICROSCOPY STUDY OF THERMAL PROCESSING INDUCED DEFECTS IN LOW RESISTIVITY SI WAFERS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 28. ISSUE 8. P. - 32 100% 0
8 KULKARNI, MS , (2005) A SELECTIVE REVIEW OF THE QUANTIFICATION OF DEFECT DYNAMICS IN GROWING CZOCHRALSKI SILICON CRYSTALS.INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH. VOL. 44. ISSUE 16. P. 6246 -6263 44 81% 19
9 ANGELETOS, T , SGOUROU, EN , ANDRIANAKIS, A , DIAMANTOPOULOU, A , CHRONEOS, A , LONDOS, CA , (2015) OXYGEN AGGREGATION KINETICS, THERMAL DONORS AND CARBON-OXYGEN DEFECT FORMATION IN SILICON CONTAINING CARBON AND TIN.JOURNAL OF APPLIED PHYSICS. VOL. 118. ISSUE 1. P. - 36 80% 0
10 KAROUI, FS , KAROUI, A , (2010) A DENSITY FUNCTIONAL THEORY STUDY OF THE ATOMIC STRUCTURE, FORMATION ENERGY, AND VIBRATIONAL PROPERTIES OF NITROGEN-VACANCY-OXYGEN DEFECTS IN SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 108. ISSUE 3. P. - 42 75% 6

Classes with closest relation at Level 1


Rank Class id link
1 4246 GETTERING//DLTS//GETTERING EFFICIENCY
2 6817 SOVIET PHYSICS SEMICONDUCTORS-USSR//LIFETIME CONTROL//DLTS
3 31721 GLASS BEAD DESTRUCTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//STATE TORAT
4 20489 PN JUNCTION LEAKAGE//IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE
5 7339 CZOCHRALSKI METHOD//MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD//CZOCHRALSKI CRYSTAL GROWTH
6 12826 SIMOX//CONTACTLESS I V METHOD//BURIED OXIDE LAYER
7 5113 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN ATOM TREATMENT
8 13429 INDIRECT BANDGAP SEMICONDUCTOR//D LINES//EBIC
9 14069 GERMANIUM//L DLTS//CNR IMM MATIS
10 6450 MULTICRYSTALLINE SILICON//PHOTOLUMINESCENCE IMAGING//GETTERING

Go to start page