Class information for:
Level 1: INDIRECT BANDGAP SEMICONDUCTOR//D LINES//EBIC

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
13429 837 17.9 54%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
648 2             OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING 13601
13429 1                   INDIRECT BANDGAP SEMICONDUCTOR//D LINES//EBIC 837

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 INDIRECT BANDGAP SEMICONDUCTOR authKW 109441 0% 100% 3
2 D LINES authKW 109435 1% 50% 6
3 EBIC authKW 98060 3% 13% 21
4 SILICON LIGHT EMISSION authKW 72961 0% 100% 2
5 SIPHER R authKW 72961 0% 100% 2
6 D BANDS authKW 54718 0% 50% 3
7 BANDLIKE STATES authKW 48639 0% 67% 2
8 DISLOCATION ENGINEERED authKW 48639 0% 67% 2
9 RECOMBINATION STRENGTH authKW 48639 0% 67% 2
10 IHP address 38021 1% 15% 7

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Condensed Matter 9196 55% 0% 457
2 Physics, Applied 3184 40% 0% 338
3 Materials Science, Multidisciplinary 1053 27% 0% 225
4 Physics, Multidisciplinary 414 12% 0% 98
5 Microscopy 103 1% 0% 11
6 Optics 34 4% 0% 35
7 Materials Science, Coatings & Films 18 2% 0% 13
8 Engineering, Electrical & Electronic 12 5% 0% 43
9 Nanoscience & Nanotechnology 11 2% 0% 19
10 Physics, Fluids & Plasmas 10 1% 0% 12

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IHP 38021 1% 15% 7
2 CHAIR ADV ELECT ENGN 36480 0% 100% 1
3 DROGOBYCH PEDAGOG 36480 0% 100% 1
4 EA 882 DSO 36480 0% 100% 1
5 EXPT ANGEW PHYSIOL 36480 0% 100% 1
6 GENERAT PHOTOVOLT 3 36480 0% 100% 1
7 HGRP MD 36480 0% 100% 1
8 JOINT IHP 36480 0% 100% 1
9 JOINT SAMSUNG ADV TECHNOL 36480 0% 100% 1
10 LS EXPERIMENTALPHYS II 36480 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SOLID STATE PHENOMENA 22649 4% 2% 37
2 SEMICONDUCTORS 20106 7% 1% 61
3 FIZIKA TVERDOGO TELA 12764 7% 1% 62
4 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 8320 8% 0% 68
5 SOVIET PHYSICS SEMICONDUCTORS-USSR 5460 3% 1% 29
6 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 3577 3% 0% 27
7 JOURNAL DE PHYSIQUE III 3399 1% 1% 10
8 INSTITUTE OF PHYSICS CONFERENCE SERIES 1617 3% 0% 21
9 PHYSICS OF THE SOLID STATE 981 2% 0% 15
10 APPLIED PHYSICS LETTERS 963 7% 0% 56

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 INDIRECT BANDGAP SEMICONDUCTOR 109441 0% 100% 3 Search INDIRECT+BANDGAP+SEMICONDUCTOR Search INDIRECT+BANDGAP+SEMICONDUCTOR
2 D LINES 109435 1% 50% 6 Search D+LINES Search D+LINES
3 EBIC 98060 3% 13% 21 Search EBIC Search EBIC
4 SILICON LIGHT EMISSION 72961 0% 100% 2 Search SILICON+LIGHT+EMISSION Search SILICON+LIGHT+EMISSION
5 SIPHER R 72961 0% 100% 2 Search SIPHER+R Search SIPHER+R
6 D BANDS 54718 0% 50% 3 Search D+BANDS Search D+BANDS
7 BANDLIKE STATES 48639 0% 67% 2 Search BANDLIKE+STATES Search BANDLIKE+STATES
8 DISLOCATION ENGINEERED 48639 0% 67% 2 Search DISLOCATION+ENGINEERED Search DISLOCATION+ENGINEERED
9 RECOMBINATION STRENGTH 48639 0% 67% 2 Search RECOMBINATION+STRENGTH Search RECOMBINATION+STRENGTH
10 AMPHOTERIC TRAP 36480 0% 100% 1 Search AMPHOTERIC+TRAP Search AMPHOTERIC+TRAP

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 SOBOLEV, NA , (2010) DEFECT ENGINEERING IN IMPLANTATION TECHNOLOGY OF SILICON LIGHT-EMITTING STRUCTURES WITH DISLOCATION-RELATED LUMINESCENCE.SEMICONDUCTORS. VOL. 44. ISSUE 1. P. 1 -23 39 57% 4
2 KURKINA, II , ANTONOVA, IV , SHKLYAEV, AA , SMAGULOVA, SA , ICHIKAWA, M , (2012) LUMINESCENCE AND DEEP-LEVEL TRANSIENT SPECTROSCOPY OF GROWN DISLOCATION-RICH SI LAYERS.AIP ADVANCES. VOL. 2. ISSUE 3. P. - 26 79% 1
3 SCHROTER, W , CERVA, H , (2002) INTERACTION OF POINT DEFECTS WITH DISLOCATIONS IN SILICON AND GERMANIUM: ELECTRICAL AND OPTICAL EFFECTS.DEFECT INTERACTION AND CLUSTERING IN SEMICONDUCTORS. VOL. 85-86. ISSUE . P. 67 -143 51 44% 58
4 KVEDER, V , BADYLEVICH, M , SCHROTER, W , SEIBT, M , STEINMAN, E , IZOTOV, A , (2005) SILICON LIGHT-EMITTING DIODES BASED ON DISLOCATION-RELATED LUMINESCENCE.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 202. ISSUE 5. P. 901-910 23 82% 44
5 XIANG, LL , LI, DS , JIN, L , WANG, SM , YANG, DR , (2013) ENHANCEMENT OF ROOM TEMPERATURE DISLOCATION-RELATED PHOTOLUMINESCENCE OF ELECTRON IRRADIATED SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 3. P. - 22 73% 3
6 SHKLYAEV, AA , DULTSEV, FN , MOGILNIKOV, KP , LATYSHEV, AV , ICHIKAWA, M , (2011) ELECTROLUMINESCENCE OF DISLOCATION-RICH SI LAYERS GROWN USING OXIDIZED SI SURFACES.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 44. ISSUE 2. P. - 23 72% 5
7 SOBOLEV, NA , SHTEL'MAKH, KF , KALYADIN, AE , ARUEV, PN , ZABRODSKIY, VV , SHEK, EI , YANG, D , (2016) ELECTROLUMINESCENCE PROPERTIES OF LEDS BASED ON ELECTRON-IRRADIATED P-SI.SEMICONDUCTORS. VOL. 50. ISSUE 2. P. 252 -256 16 84% 0
8 XIANG, LL , LI, DS , JIN, L , YANG, DR , (2012) DISLOCATION-RELATED ELECTROLUMINESCENCE OF SILICON AFTER ELECTRON IRRADIATION.SOLID STATE COMMUNICATIONS. VOL. 152. ISSUE 21. P. 1956 -1959 15 88% 3
9 KVEDER, V , KITTLER, M , SCHROTER, W , (2001) RECOMBINATION ACTIVITY OF CONTAMINATED DISLOCATIONS IN SILICON: A ELECTRON-BEAM-INDUCED CURRENT CONTRAST BEHAVIOR.PHYSICAL REVIEW B. VOL. 63. ISSUE 11. P. - 19 66% 137
10 STEINMAN, EA , KENYON, AJ , TERESHCHENKO, AN , (2008) TIME-RESOLVED MEASUREMENTS OF DISLOCATION-RELATED PHOTOLUMINESCENCE BANDS IN SILICON.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 23. ISSUE 2. P. - 12 100% 4

Classes with closest relation at Level 1


Rank Class id link
1 8153 UMR 6630//HEAVY B DOPING//HEAVY B AND GE CODOPING
2 11412 ELECTRON BEAM INDUCED CURRENT//EBIC//ELECTRON BEAM APPLICATIONS
3 6450 MULTICRYSTALLINE SILICON//PHOTOLUMINESCENCE IMAGING//GETTERING
4 22936 OPTIMIZATION OF ANNEALING//SILICON MICROCAVITY//DECREASING OF DEPTH OF P N JUNCTIONS
5 4246 GETTERING//DLTS//GETTERING EFFICIENCY
6 21482 CARL EMILY FUCHS MICROELECT//CEFIM//HOT CARRIER LUMINESCENCE
7 3132 ERBIUM//ERBIUM DOPED SILICON//RUTHERFORD BACKSCATTERING TECHNIQUE
8 37485 SOVIET PHYSICS SEMICONDUCTORS-USSR//SEMICONDUCTORS//AMIRKHANOV PHYS
9 1673 OXYGEN PRECIPITATION//CZOCHRALSKI SILICON//OXYGEN PRECIPITATES
10 34373 MECH MACHINE RELIABIL//AL FE BASE ALLOY//AL FE BASED ALLOY

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