Class information for:
Level 1: GERMANIUM//L DLTS//CNR IMM MATIS

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
14069 795 24.9 62%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
648 2             OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING 13601
14069 1                   GERMANIUM//L DLTS//CNR IMM MATIS 795

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 GERMANIUM authKW 299386 21% 5% 165
2 L DLTS authKW 172832 1% 75% 6
3 CNR IMM MATIS address 167583 2% 36% 12
4 ELECT MAT DEVICES NANOSTRUCT address 149900 1% 35% 11
5 GE VACANCY authKW 115224 0% 100% 3
6 MATIS IMM CNR address 84068 1% 24% 9
7 DLTS authKW 82582 5% 6% 38
8 CRYOGENIC IMPLANTATION authKW 76816 0% 100% 2
9 GE SELF INTERSTITIAL authKW 76816 0% 100% 2
10 GERMANIDATION authKW 76816 0% 100% 2

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Physics, Condensed Matter 6101 46% 0% 366
2 Physics, Applied 5197 52% 0% 412
3 Materials Science, Multidisciplinary 949 26% 0% 209
4 Engineering, Electrical & Electronic 580 18% 0% 142
5 Nuclear Science & Technology 123 4% 0% 35
6 Materials Science, Coatings & Films 121 3% 0% 26
7 Instruments & Instrumentation 57 4% 0% 28
8 Physics, Nuclear 49 3% 0% 25
9 Physics, Atomic, Molecular & Chemical 23 4% 0% 28
10 Physics, Multidisciplinary 23 4% 0% 34

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 CNR IMM MATIS 167583 2% 36% 12
2 ELECT MAT DEVICES NANOSTRUCT 149900 1% 35% 11
3 MATIS IMM CNR 84068 1% 24% 9
4 SOLID STATE SCI 72007 6% 4% 49
5 PALAZ 57609 0% 50% 3
6 ASSOCIATED SECT ESAT INSYS 51209 0% 67% 2
7 IMM MATIS 49378 0% 43% 3
8 ELECT SOLIDE SYST 43111 1% 14% 8
9 CMM MNF MATEC 38408 0% 100% 1
10 DAINIPPON SCREEN GRP 38408 0% 100% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 35271 7% 2% 55
2 PHYSICA B-CONDENSED MATTER 4420 8% 0% 60
3 JOURNAL OF APPLIED PHYSICS 3674 13% 0% 102
4 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 2941 1% 1% 10
5 SOVIET PHYSICS SEMICONDUCTORS-USSR 2723 3% 0% 20
6 APPLIED PHYSICS LETTERS 1929 10% 0% 76
7 MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS 1919 1% 0% 11
8 APPLIED PHYSICS REVIEWS 1613 0% 2% 2
9 DEFECT AND DIFFUSION FORUM 1334 1% 1% 4
10 PHYSICAL REVIEW B 1139 9% 0% 73

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 GERMANIUM 299386 21% 5% 165 Search GERMANIUM Search GERMANIUM
2 L DLTS 172832 1% 75% 6 Search L+DLTS Search L+DLTS
3 GE VACANCY 115224 0% 100% 3 Search GE+VACANCY Search GE+VACANCY
4 DLTS 82582 5% 6% 38 Search DLTS Search DLTS
5 CRYOGENIC IMPLANTATION 76816 0% 100% 2 Search CRYOGENIC+IMPLANTATION Search CRYOGENIC+IMPLANTATION
6 GE SELF INTERSTITIAL 76816 0% 100% 2 Search GE+SELF+INTERSTITIAL Search GE+SELF+INTERSTITIAL
7 GERMANIDATION 76816 0% 100% 2 Search GERMANIDATION Search GERMANIDATION
8 IN IMPURITIES 76816 0% 100% 2 Search IN+IMPURITIES Search IN+IMPURITIES
9 POINT RADIATION DEFECTS 76816 0% 100% 2 Search POINT+RADIATION+DEFECTS Search POINT+RADIATION+DEFECTS
10 SI GE EPI LAYERS 76816 0% 100% 2 Search SI+GE+EPI+LAYERS Search SI+GE+EPI+LAYERS

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 CHRONEOS, A , BRACHT, H , (2014) DIFFUSION OF N-TYPE DOPANTS IN GERMANIUM.APPLIED PHYSICS REVIEWS. VOL. 1. ISSUE 1. P. - 95 68% 34
2 SIMOEN, E , SCHAEKERS, M , LIU, JB , LUO, J , ZHAO, C , BARLA, K , COLLAERT, N , (2016) DEFECT ENGINEERING FOR SHALLOW N-TYPE JUNCTIONS IN GERMANIUM: FACTS AND FICTION.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 213. ISSUE 11. P. 2799 -2808 71 77% 0
3 CHRONEOS, A , (2012) DOPANT-DEFECT INTERACTIONS IN GE: DENSITY FUNCTIONAL THEORY CALCULATIONS.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 15. ISSUE 6. P. 691 -696 54 82% 2
4 VANHELLEMONT, J , SIMOEN, E , (2012) ON THE DIFFUSION AND ACTIVATION OF N-TYPE DOPANTS IN GE.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 15. ISSUE 6. P. 642-655 50 81% 18
5 BRACHT, H , (2014) DEFECT ENGINEERING IN GERMANIUM.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 211. ISSUE 1. P. 109-117 41 85% 5
6 SEGERS, SH , LAUWAERT, J , CLAUWS, P , SIMOEN, E , VANHELLEMONT, J , CALLENS, F , VRIELINCK, H , (2014) DIRECT ESTIMATION OF CAPTURE CROSS SECTIONS IN THE PRESENCE OF SLOW CAPTURE: APPLICATION TO THE IDENTIFICATION OF QUENCHED-IN DEEP-LEVEL DEFECTS IN GE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 29. ISSUE 12. P. - 31 97% 0
7 CHRONEOS, A , (2013) DEFECT ENGINEERING STRATEGIES FOR GERMANIUM.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 24. ISSUE 6. P. 1741 -1747 54 55% 3
8 KUBE, R , BRACHT, H , CHRONEOS, A , POSSELT, M , SCHMIDT, B , (2009) INTRINSIC AND EXTRINSIC DIFFUSION OF INDIUM IN GERMANIUM.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 6. P. - 34 89% 16
9 SCHNEIDER, S , BRACHT, H , KLUG, JN , HANSEN, JL , LARSEN, AN , BOUGEARD, D , HALLER, EE , (2013) RADIATION-ENHANCED SELF- AND BORON DIFFUSION IN GERMANIUM.PHYSICAL REVIEW B. VOL. 87. ISSUE 11. P. - 35 80% 4
10 ZOGRAPHOS, N , ERLEBACH, A , (2014) PROCESS SIMULATION OF DOPANT DIFFUSION AND ACTIVATION IN GERMANIUM.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 211. ISSUE 1. P. 143-146 27 96% 3

Classes with closest relation at Level 1



Rank Class id link
1 28929 NANOPOROUS GERMANIUM//THIN FOIL IRRADIATION//TIN ION
2 32367 ADV DEVICE TECHNLOL//BANDGAP CORRECTION//BREMEN COMP MATER SCI
3 9326 GERMANIUM//MBE//GE MOS
4 6817 SOVIET PHYSICS SEMICONDUCTORS-USSR//LIFETIME CONTROL//DLTS
5 771 TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//SWAMP
6 5777 GESN//GERMANIUM TIN//L NESS
7 5113 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN ATOM TREATMENT
8 17332 SOLID EARTH PHYS//SEISMIC ELECTRIC SIGNALS//SOLID STATE SECT
9 17770 VOLTCOULOMETRY//DLTS RESOLUTION//SEMI INSULATING MATERIALS
10 4246 GETTERING//DLTS//GETTERING EFFICIENCY

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