Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
14069 | 795 | 24.9 | 62% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
648 | 2 | OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING | 13601 |
14069 | 1 | GERMANIUM//L DLTS//CNR IMM MATIS | 795 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GERMANIUM | authKW | 299386 | 21% | 5% | 165 |
2 | L DLTS | authKW | 172832 | 1% | 75% | 6 |
3 | CNR IMM MATIS | address | 167583 | 2% | 36% | 12 |
4 | ELECT MAT DEVICES NANOSTRUCT | address | 149900 | 1% | 35% | 11 |
5 | GE VACANCY | authKW | 115224 | 0% | 100% | 3 |
6 | MATIS IMM CNR | address | 84068 | 1% | 24% | 9 |
7 | DLTS | authKW | 82582 | 5% | 6% | 38 |
8 | CRYOGENIC IMPLANTATION | authKW | 76816 | 0% | 100% | 2 |
9 | GE SELF INTERSTITIAL | authKW | 76816 | 0% | 100% | 2 |
10 | GERMANIDATION | authKW | 76816 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 6101 | 46% | 0% | 366 |
2 | Physics, Applied | 5197 | 52% | 0% | 412 |
3 | Materials Science, Multidisciplinary | 949 | 26% | 0% | 209 |
4 | Engineering, Electrical & Electronic | 580 | 18% | 0% | 142 |
5 | Nuclear Science & Technology | 123 | 4% | 0% | 35 |
6 | Materials Science, Coatings & Films | 121 | 3% | 0% | 26 |
7 | Instruments & Instrumentation | 57 | 4% | 0% | 28 |
8 | Physics, Nuclear | 49 | 3% | 0% | 25 |
9 | Physics, Atomic, Molecular & Chemical | 23 | 4% | 0% | 28 |
10 | Physics, Multidisciplinary | 23 | 4% | 0% | 34 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CNR IMM MATIS | 167583 | 2% | 36% | 12 |
2 | ELECT MAT DEVICES NANOSTRUCT | 149900 | 1% | 35% | 11 |
3 | MATIS IMM CNR | 84068 | 1% | 24% | 9 |
4 | SOLID STATE SCI | 72007 | 6% | 4% | 49 |
5 | PALAZ | 57609 | 0% | 50% | 3 |
6 | ASSOCIATED SECT ESAT INSYS | 51209 | 0% | 67% | 2 |
7 | IMM MATIS | 49378 | 0% | 43% | 3 |
8 | ELECT SOLIDE SYST | 43111 | 1% | 14% | 8 |
9 | CMM MNF MATEC | 38408 | 0% | 100% | 1 |
10 | DAINIPPON SCREEN GRP | 38408 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 35271 | 7% | 2% | 55 |
2 | PHYSICA B-CONDENSED MATTER | 4420 | 8% | 0% | 60 |
3 | JOURNAL OF APPLIED PHYSICS | 3674 | 13% | 0% | 102 |
4 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2941 | 1% | 1% | 10 |
5 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 2723 | 3% | 0% | 20 |
6 | APPLIED PHYSICS LETTERS | 1929 | 10% | 0% | 76 |
7 | MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 1919 | 1% | 0% | 11 |
8 | APPLIED PHYSICS REVIEWS | 1613 | 0% | 2% | 2 |
9 | DEFECT AND DIFFUSION FORUM | 1334 | 1% | 1% | 4 |
10 | PHYSICAL REVIEW B | 1139 | 9% | 0% | 73 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GERMANIUM | 299386 | 21% | 5% | 165 | Search GERMANIUM | Search GERMANIUM |
2 | L DLTS | 172832 | 1% | 75% | 6 | Search L+DLTS | Search L+DLTS |
3 | GE VACANCY | 115224 | 0% | 100% | 3 | Search GE+VACANCY | Search GE+VACANCY |
4 | DLTS | 82582 | 5% | 6% | 38 | Search DLTS | Search DLTS |
5 | CRYOGENIC IMPLANTATION | 76816 | 0% | 100% | 2 | Search CRYOGENIC+IMPLANTATION | Search CRYOGENIC+IMPLANTATION |
6 | GE SELF INTERSTITIAL | 76816 | 0% | 100% | 2 | Search GE+SELF+INTERSTITIAL | Search GE+SELF+INTERSTITIAL |
7 | GERMANIDATION | 76816 | 0% | 100% | 2 | Search GERMANIDATION | Search GERMANIDATION |
8 | IN IMPURITIES | 76816 | 0% | 100% | 2 | Search IN+IMPURITIES | Search IN+IMPURITIES |
9 | POINT RADIATION DEFECTS | 76816 | 0% | 100% | 2 | Search POINT+RADIATION+DEFECTS | Search POINT+RADIATION+DEFECTS |
10 | SI GE EPI LAYERS | 76816 | 0% | 100% | 2 | Search SI+GE+EPI+LAYERS | Search SI+GE+EPI+LAYERS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CHRONEOS, A , BRACHT, H , (2014) DIFFUSION OF N-TYPE DOPANTS IN GERMANIUM.APPLIED PHYSICS REVIEWS. VOL. 1. ISSUE 1. P. - | 95 | 68% | 34 |
2 | SIMOEN, E , SCHAEKERS, M , LIU, JB , LUO, J , ZHAO, C , BARLA, K , COLLAERT, N , (2016) DEFECT ENGINEERING FOR SHALLOW N-TYPE JUNCTIONS IN GERMANIUM: FACTS AND FICTION.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 213. ISSUE 11. P. 2799 -2808 | 71 | 77% | 0 |
3 | CHRONEOS, A , (2012) DOPANT-DEFECT INTERACTIONS IN GE: DENSITY FUNCTIONAL THEORY CALCULATIONS.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 15. ISSUE 6. P. 691 -696 | 54 | 82% | 2 |
4 | VANHELLEMONT, J , SIMOEN, E , (2012) ON THE DIFFUSION AND ACTIVATION OF N-TYPE DOPANTS IN GE.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 15. ISSUE 6. P. 642-655 | 50 | 81% | 18 |
5 | BRACHT, H , (2014) DEFECT ENGINEERING IN GERMANIUM.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 211. ISSUE 1. P. 109-117 | 41 | 85% | 5 |
6 | SEGERS, SH , LAUWAERT, J , CLAUWS, P , SIMOEN, E , VANHELLEMONT, J , CALLENS, F , VRIELINCK, H , (2014) DIRECT ESTIMATION OF CAPTURE CROSS SECTIONS IN THE PRESENCE OF SLOW CAPTURE: APPLICATION TO THE IDENTIFICATION OF QUENCHED-IN DEEP-LEVEL DEFECTS IN GE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 29. ISSUE 12. P. - | 31 | 97% | 0 |
7 | CHRONEOS, A , (2013) DEFECT ENGINEERING STRATEGIES FOR GERMANIUM.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 24. ISSUE 6. P. 1741 -1747 | 54 | 55% | 3 |
8 | KUBE, R , BRACHT, H , CHRONEOS, A , POSSELT, M , SCHMIDT, B , (2009) INTRINSIC AND EXTRINSIC DIFFUSION OF INDIUM IN GERMANIUM.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 6. P. - | 34 | 89% | 16 |
9 | SCHNEIDER, S , BRACHT, H , KLUG, JN , HANSEN, JL , LARSEN, AN , BOUGEARD, D , HALLER, EE , (2013) RADIATION-ENHANCED SELF- AND BORON DIFFUSION IN GERMANIUM.PHYSICAL REVIEW B. VOL. 87. ISSUE 11. P. - | 35 | 80% | 4 |
10 | ZOGRAPHOS, N , ERLEBACH, A , (2014) PROCESS SIMULATION OF DOPANT DIFFUSION AND ACTIVATION IN GERMANIUM.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 211. ISSUE 1. P. 143-146 | 27 | 96% | 3 |
Classes with closest relation at Level 1 |