Class information for:
Level 1: PN JUNCTION LEAKAGE//IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
20489 457 16.2 39%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
648 2             OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING 13601
20489 1                   PN JUNCTION LEAKAGE//IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE 457

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 PN JUNCTION LEAKAGE authKW 150335 1% 75% 3
2 IRRADIATED P N JUNCTION LEAKAGE authKW 133632 0% 100% 2
3 JUNCTION SHAPE authKW 133632 0% 100% 2
4 PHOTOELECTRIC MOSFET authKW 133632 0% 100% 2
5 SI JUNCTION DIODES authKW 133632 0% 100% 2
6 SILICON SUBSTRATE HARDENING authKW 133632 0% 100% 2
7 SURFACE GENERATION VELOCITY authKW 75164 1% 38% 3
8 CARRIER LIFETIMES authKW 71265 1% 27% 4
9 AREA LEAKAGE CURRENT authKW 66816 0% 100% 1
10 BROADBAND VIDEO PYROMETER authKW 66816 0% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Condensed Matter 3354 45% 0% 206
2 Physics, Applied 2753 50% 0% 228
3 Engineering, Electrical & Electronic 2224 41% 0% 189
4 Materials Science, Coatings & Films 333 7% 0% 30
5 Electrochemistry 166 6% 0% 26
6 Materials Science, Multidisciplinary 104 14% 0% 63
7 Instruments & Instrumentation 58 4% 0% 20
8 Nuclear Science & Technology 33 3% 0% 15
9 Nanoscience & Nanotechnology 30 4% 0% 17
10 Telecommunications 20 2% 0% 11

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELE ON ELE OTECH 66816 0% 100% 1
2 ELECT ENGN ESAT INTEGRATED SYST 66816 0% 100% 1
3 ELECT ENGN ESAT S 66816 0% 100% 1
4 ELECT ENGN SOLID STATE DEVICE 66816 0% 100% 1
5 ENGN SOLID STATE ELECT 66816 0% 100% 1
6 LASERS SYST SOLUT EUROPE LASSE 66816 0% 100% 1
7 RASTR OAO 66816 0% 100% 1
8 SHANGHAI MARINE ELECT EQUIPMENT 66816 0% 100% 1
9 STATE ENTERPRISE MICRODEVICES 66816 0% 100% 1
10 SCI TECHNOL MICROELECT SUBMICROMETER HETE 66814 0% 50% 2

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SOLID-STATE ELECTRONICS 26933 14% 1% 63
2 SEMICONDUCTORS 22844 11% 1% 48
3 SOVIET MICROELECTRONICS 8033 1% 2% 6
4 SOVIET PHYSICS SEMICONDUCTORS-USSR 5773 5% 0% 22
5 IEEE TRANSACTIONS ON ELECTRON DEVICES 5356 8% 0% 35
6 JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS 1704 2% 0% 9
7 MICROWAVES 1552 0% 2% 1
8 SOLID STATE TECHNOLOGY 1288 1% 0% 6
9 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 1250 5% 0% 24
10 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 998 2% 0% 11

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 PN JUNCTION LEAKAGE 150335 1% 75% 3 Search PN+JUNCTION+LEAKAGE Search PN+JUNCTION+LEAKAGE
2 IRRADIATED P N JUNCTION LEAKAGE 133632 0% 100% 2 Search IRRADIATED+P+N+JUNCTION+LEAKAGE Search IRRADIATED+P+N+JUNCTION+LEAKAGE
3 JUNCTION SHAPE 133632 0% 100% 2 Search JUNCTION+SHAPE Search JUNCTION+SHAPE
4 PHOTOELECTRIC MOSFET 133632 0% 100% 2 Search PHOTOELECTRIC+MOSFET Search PHOTOELECTRIC+MOSFET
5 SI JUNCTION DIODES 133632 0% 100% 2 Search SI+JUNCTION+DIODES Search SI+JUNCTION+DIODES
6 SILICON SUBSTRATE HARDENING 133632 0% 100% 2 Search SILICON+SUBSTRATE+HARDENING Search SILICON+SUBSTRATE+HARDENING
7 SURFACE GENERATION VELOCITY 75164 1% 38% 3 Search SURFACE+GENERATION+VELOCITY Search SURFACE+GENERATION+VELOCITY
8 CARRIER LIFETIMES 71265 1% 27% 4 Search CARRIER+LIFETIMES Search CARRIER+LIFETIMES
9 AREA LEAKAGE CURRENT 66816 0% 100% 1 Search AREA+LEAKAGE+CURRENT Search AREA+LEAKAGE+CURRENT
10 BROADBAND VIDEO PYROMETER 66816 0% 100% 1 Search BROADBAND+VIDEO+PYROMETER Search BROADBAND+VIDEO+PYROMETER

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 DMITRIEV, SG , (2015) FAST AND SLOW DYNAMIC CURRENT-VOLTAGE CHARACTERISTICS OF MOBILE IONS IN DIELECTRIC FILMS. UNIVERSALITY.JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS. VOL. 60. ISSUE 9. P. 1011 -1015 11 79% 0
2 GOLDMAN, EI , ZHDAN, AG , CHUCHEVA, GV , (2001) ION TRANSPORT PHENOMENA IN OXIDE LAYER ON THE SILICON SURFACE AND ELECTRON-ION EXCHANGE EFFECTS AT THE SIO2/SI INTERFACE.JOURNAL OF APPLIED PHYSICS. VOL. 89. ISSUE 1. P. 130 -145 15 79% 3
3 DMITRIEV, SG , (2013) QUASI-STATIONARY ELECTRON AND ION PROCESSES IN DIELECTRIC FILMS AND DIAGNOSTICS OF FILMS.JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS. VOL. 58. ISSUE 9. P. 956-959 8 100% 0
4 GOL'DMAN, EI , ZHDAN, AG , CHUCHEVA, GV , (1999) FREE ION TRANSPORT IN THE INSULATOR LAYER AND ELECTRON-ION EXCHANGE AT AN INSULATOR-SEMICONDUCTOR PHASE BOUNDARY PRODUCED AS A RESULT OF THERMALLY STIMULATED IONIC DEPOLARIZATION OF SILICON MOS STRUCTURES.SEMICONDUCTORS. VOL. 33. ISSUE 8. P. 877 -882 12 92% 1
5 CZERWINSKI, A , SIMOEN, E , POYAI, A , CLAEYS, C , (1999) P-N JUNCTION PERIPHERAL CURRENT ANALYSIS USING GATED DIODE MEASUREMENTS.SOLID STATE PHENOMENA. VOL. 70. ISSUE . P. 437 -442 12 86% 0
6 POYAI, A , SIMOEN, E , CLAEYS, C , CZERWINSKI, A , GAUBAS, E , (2001) IMPROVED EXTRACTION OF THE ACTIVATION ENERGY OF THE LEAKAGE CURRENT IN SILICON P-N JUNCTION DIODES.APPLIED PHYSICS LETTERS. VOL. 78. ISSUE 14. P. 1997-1999 10 91% 10
7 CZERWINSKI, A , SIMOEN, E , CLAEYS, C , (1998) P-N JUNCTION PERIPHERAL CURRENT ANALYSIS USING GATED DIODE MEASUREMENTS.APPLIED PHYSICS LETTERS. VOL. 72. ISSUE 26. P. 3503 -3505 12 80% 6
8 DMITRIEV, SG , MARKIN, YV , (2008) SODIUM-PEAK SPLITTING IN DYNAMIC CURRENT-VOLTAGE CHARACTERISTICS OF CONVECTIVE ION CURRENTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES.SEMICONDUCTORS. VOL. 42. ISSUE 1. P. 43 -51 16 44% 0
9 LEE, SY , SCHRODER, DK , (1999) MEASUREMENT TIME REDUCTION FOR GENERATION LIFETIMES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 46. ISSUE 5. P. 1016-1021 10 91% 13
10 SIMOEN, E , CLAEYS, C , (2000) THE IMPACT OF HIGH-ENERGY PROTON IRRADIATION ON THE LOW-FREQUENCY 1/F NOISE IN FZ-SILICON DIODES.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 3. ISSUE 4. P. 263-267 12 67% 1

Classes with closest relation at Level 1


Rank Class id link
1 17770 VOLTCOULOMETRY//DLTS RESOLUTION//SEMI INSULATING MATERIALS
2 32877 GREEN MOLDING COMPOUNDS//ADDITIONS OF CERIUM AND TITANIUM OXIDES//ALL RUSSIA EXPERIMENTAL PHYS
3 18384 AC SURFACE PHOTOVOLTAGE//SCANNING PHOTON MICROSCOPE//VIBRATING CAPACITOR
4 21308 BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION
5 1673 OXYGEN PRECIPITATION//CZOCHRALSKI SILICON//OXYGEN PRECIPITATES
6 24736 1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS
7 37353 OPTICAL ANALOG SIGNAL TRANSMISSION//COOLED LEDS//GALVANICALLY ISOLATED AMPLIFIER
8 11409 OPEN CIRCUIT VOLTAGE DECAY OCVD//SOLAR CELLS//SOLID-STATE ELECTRONICS
9 12205 DISPLACEMENT DAMAGE//NONIONIZING ENERGY LOSS//DISPLACEMENT DAMAGE DOSE
10 31721 GLASS BEAD DESTRUCTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//STATE TORAT

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