Class information for:
Level 2: TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
1826 6197 19.6 54%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
1826 2             TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 6197
771 1                   TRANSIENT ENHANCED DIFFUSION//SHALLOW JUNCTION//SWAMP 3089
8986 1                   IBIEC//AMORPHOUS POCKET//SOLID PHASE EPITAXIAL GROWTH 1199
11344 1                   NEUTRON DEPTH PROFILING//RANGE PARAMETERS//LATERAL STRAGGLING 989
21285 1                   SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION//DYNAMIC RANDOM ACCESS MEMORY 425
30685 1                   ULTRASHALLOW JUNCTIONS//A REDUCTION METHOD//BORON CHEMICAL VAPOR DEPOSITION 165
31301 1                   BILINEAR TRANSFORMED REFLECTANCE//DOPING RESTRUCTURING MODEL//GLOBAL NUCL FUTURE INITIAT 155
35951 1                   PHOTOVOLTAIC MINI MODULES//ADV INTERCONNECT SYST SEMICOND PROD SECTOR//AL SI THERMOMIGRATION 89
36089 1                   CHARACTERISTIC TESTING METHOD//DIFFUS TEAM//GATE TURN OFF GTO THYRISTORS 86

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 TRANSIENT ENHANCED DIFFUSION authKW 290132 1% 82% 72
2 SHALLOW JUNCTION authKW 139864 1% 42% 67
3 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS journal 133973 15% 3% 928
4 SWAMP address 125519 0% 88% 29
5 ULTRA SHALLOW JUNCTION authKW 108755 1% 47% 47
6 ION IMPLANTATION authKW 96272 5% 6% 326
7 IMETEM address 61942 1% 26% 48
8 HIGH ENERGY ION IMPLANTATION authKW 53181 0% 60% 18
9 PAIR DIFFUSION MODEL authKW 49255 0% 100% 10
10 BORON DIFFUSION authKW 48058 0% 41% 24

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 32532 47% 0% 2901
2 Nuclear Science & Technology 28886 20% 1% 1267
3 Instruments & Instrumentation 16769 17% 0% 1044
4 Physics, Nuclear 15465 15% 0% 958
5 Physics, Condensed Matter 10223 23% 0% 1405
6 Physics, Atomic, Molecular & Chemical 8322 15% 0% 955
7 Materials Science, Coatings & Films 3479 6% 0% 361
8 Engineering, Electrical & Electronic 3478 16% 0% 994
9 Materials Science, Multidisciplinary 1701 15% 0% 914
10 Electrochemistry 712 4% 0% 217

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SWAMP 125519 0% 88% 29
2 IMETEM 61942 1% 26% 48
3 ION IMPLANTAT GRP 45962 0% 67% 14
4 MATIS 38920 1% 17% 47
5 PARAMETR CONDUCT IMPLANT 24628 0% 100% 5
6 NODUS ACCELERATOR 19702 0% 100% 4
7 E ELECT 16114 0% 55% 6
8 IT COMPUTAT ELECT 14777 0% 100% 3
9 SEH RD 14777 0% 100% 3
10 IMM SEZ CATANIA 14319 0% 36% 8

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 133973 15% 3% 928
2 JOURNAL OF APPLIED PHYSICS 20692 11% 1% 679
3 APPLIED PHYSICS LETTERS 18395 11% 1% 653
4 RADIATION EFFECTS AND DEFECTS IN SOLIDS 17469 2% 3% 129
5 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 14837 2% 2% 150
6 RADIATION EFFECTS LETTERS 11749 0% 10% 23
7 IEEE TRANSACTIONS ON ELECTRON DEVICES 11415 3% 1% 190
8 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 6447 3% 1% 203
9 DEFECT AND DIFFUSION FORUM 5163 0% 5% 22
10 SOLID-STATE ELECTRONICS 4073 1% 1% 92

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 TRANSIENT ENHANCED DIFFUSION 290132 1% 82% 72 Search TRANSIENT+ENHANCED+DIFFUSION Search TRANSIENT+ENHANCED+DIFFUSION
2 SHALLOW JUNCTION 139864 1% 42% 67 Search SHALLOW+JUNCTION Search SHALLOW+JUNCTION
3 ULTRA SHALLOW JUNCTION 108755 1% 47% 47 Search ULTRA+SHALLOW+JUNCTION Search ULTRA+SHALLOW+JUNCTION
4 ION IMPLANTATION 96272 5% 6% 326 Search ION+IMPLANTATION Search ION+IMPLANTATION
5 HIGH ENERGY ION IMPLANTATION 53181 0% 60% 18 Search HIGH+ENERGY+ION+IMPLANTATION Search HIGH+ENERGY+ION+IMPLANTATION
6 PAIR DIFFUSION MODEL 49255 0% 100% 10 Search PAIR+DIFFUSION+MODEL Search PAIR+DIFFUSION+MODEL
7 BORON DIFFUSION 48058 0% 41% 24 Search BORON+DIFFUSION Search BORON+DIFFUSION
8 SOLID PHASE EPITAXIAL REGROWTH 45962 0% 67% 14 Search SOLID+PHASE+EPITAXIAL+REGROWTH Search SOLID+PHASE+EPITAXIAL+REGROWTH
9 MOLECULAR ION IMPLANTATION 45842 0% 85% 11 Search MOLECULAR+ION+IMPLANTATION Search MOLECULAR+ION+IMPLANTATION
10 NEUTRON DEPTH PROFILING 41330 0% 44% 19 Search NEUTRON+DEPTH+PROFILING Search NEUTRON+DEPTH+PROFILING

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 PELAZ, L , MARQUES, LA , ABOY, M , LOPEZ, P , SANTOS, I , (2009) FRONT-END PROCESS MODELING IN SILICON.EUROPEAN PHYSICAL JOURNAL B. VOL. 72. ISSUE 3. P. 323 -359 239 81% 18
2 ABOY, M , SANTOS, I , PELAZ, L , MARQUES, LA , LOPEZ, P , (2014) MODELING OF DEFECTS, DOPANT DIFFUSION AND CLUSTERING IN SILICON.JOURNAL OF COMPUTATIONAL ELECTRONICS. VOL. 13. ISSUE 1. P. 40 -58 110 81% 5
3 PELAZ, L , MARQUES, LA , BARBOLLA, J , (2004) ION-BEAM-INDUCED AMORPHIZATION AND RECRYSTALLIZATION IN SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 96. ISSUE 11. P. 5947-5976 117 75% 170
4 SHAO, L , LIU, JR , CHEN, QY , CHU, WK , (2003) BORON DIFFUSION IN SILICON: THE ANOMALIES AND CONTROL BY POINT DEFECT ENGINEERING.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 42. ISSUE 3-4. P. 65 -114 121 73% 46
5 HOBLER, G , OTTO, G , (2003) STATUS AND OPEN PROBLEMS IN MODELING OF AS-IMPLANTED DAMAGE IN SILICON.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 6. ISSUE 1-3. P. 1 -14 107 79% 55
6 JAIN, SC , SCHOENMAKER, W , LINDSAY, R , STOLK, PA , DECOUTERE, S , WILLANDER, M , MAES, HE , (2002) TRANSIENT ENHANCED DIFFUSION OF BORON IN SI.JOURNAL OF APPLIED PHYSICS. VOL. 91. ISSUE 11. P. 8919 -8941 75 90% 178
7 MIRABELLA, S , DE SALVADOR, D , NAPOLITANI, E , BRUNO, E , PRIOLO, F , (2013) MECHANISMS OF BORON DIFFUSION IN SILICON AND GERMANIUM.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 3. P. - 71 67% 32
8 SCHREUTELKAMP, RJ , CUSTER, JS , LIEFTING, JR , LU, WX , SARIS, FW , (1991) PRE-AMORPHIZATION DAMAGE IN ION-IMPLANTED SILICON.MATERIALS SCIENCE REPORTS. VOL. 6. ISSUE 7-8. P. 275-366 113 88% 72
9 FAHEY, PM , GRIFFIN, PB , PLUMMER, JD , (1989) POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON.REVIEWS OF MODERN PHYSICS. VOL. 61. ISSUE 2. P. 289-384 84 65% 975
10 STOLK, PA , GOSSMANN, HJ , EAGLESHAM, DJ , JACOBSON, DC , RAFFERTY, CS , GILMER, GH , JARAIZ, M , POATE, JM , LUFTMAN, HS , HAYNES, TE , (1997) PHYSICAL MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 81. ISSUE 9. P. 6031-6050 59 84% 474

Classes with closest relation at Level 2


Rank Class id link
1 648 OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING
2 1299 SIGE//STRAINED SI//VIRTUAL SUBSTRATE
3 1242 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS//SWIFT HEAVY IONS//THERMAL SPIKE
4 1385 POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS
5 4090 MAGNET SENSOR//SOVIET PHYSICS SEMICONDUCTORS-USSR//RADIATION RESISTANT HALL SENSORS
6 4119 ANAL STRUCT MAT//UNITE RECH PHYS SOLIDE//PHYS MATIERE CONDENSEE NANOSCI LR ES 40 11
7 3506 RAPID THERMAL PROCESSING//RAPID THERMAL PROCESSING RTP//WAFER TEMPERATURE UNIFORMITY
8 532 IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET
9 3065 ION BEAM ENGN EXPT//GAS CLUSTER ION BEAM//CLUSTER ION BEAM
10 1016 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS//STOPPING POWER//CHANNELING

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