Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
22936 | 364 | 15.8 | 39% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
648 | 2 | OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING | 13601 |
22936 | 1 | OPTIMIZATION OF ANNEALING//SILICON MICROCAVITY//DECREASING OF DEPTH OF P N JUNCTIONS | 364 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | OPTIMIZATION OF ANNEALING | authKW | 419438 | 1% | 100% | 5 |
2 | SILICON MICROCAVITY | authKW | 335551 | 1% | 100% | 4 |
3 | DECREASING OF DEPTH OF P N JUNCTIONS | authKW | 251663 | 1% | 100% | 3 |
4 | OPTIMIZATION OF TECHNOLOGICAL PROCESS | authKW | 251663 | 1% | 100% | 3 |
5 | ARBEITSGRP EPR | address | 167775 | 1% | 100% | 2 |
6 | DECREASING OF MECHANICAL STRESS | authKW | 167775 | 1% | 100% | 2 |
7 | ULTRA SHALLOW DIFFUSION PROFILE | authKW | 167775 | 1% | 100% | 2 |
8 | NIZHNY NOVGOROD | address | 107852 | 1% | 43% | 3 |
9 | A LARGE SCALE POTENTIAL | authKW | 83888 | 0% | 100% | 1 |
10 | ACCOUNTING DRAIN OF DOPANT | authKW | 83888 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 5724 | 65% | 0% | 236 |
2 | Physics, Multidisciplinary | 287 | 14% | 0% | 52 |
3 | Physics, Applied | 185 | 17% | 0% | 62 |
4 | Spectroscopy | 49 | 4% | 0% | 14 |
5 | Materials Science, Multidisciplinary | 38 | 11% | 0% | 39 |
6 | Nanoscience & Nanotechnology | 26 | 4% | 0% | 14 |
7 | Optics | 11 | 4% | 0% | 14 |
8 | Physics, Mathematical | 7 | 2% | 0% | 7 |
9 | Physics, Fluids & Plasmas | 0 | 1% | 0% | 3 |
10 | Engineering, Electrical & Electronic | -0 | 3% | 0% | 10 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ARBEITSGRP EPR | 167775 | 1% | 100% | 2 |
2 | NIZHNY NOVGOROD | 107852 | 1% | 43% | 3 |
3 | AO IOFFE PHYS TECH | 83888 | 0% | 100% | 1 |
4 | IOFFE PHYSICALTECH | 83888 | 0% | 100% | 1 |
5 | NGO PHYS SUN | 83888 | 0% | 100% | 1 |
6 | CEF SEMICOND | 41943 | 0% | 50% | 1 |
7 | PHYS MICROSTRUCTU | 20970 | 0% | 25% | 1 |
8 | NTK SINGLE CRYSTALS | 10484 | 0% | 13% | 1 |
9 | AF IOFFE PHYSICOTECH | 6708 | 6% | 0% | 21 |
10 | MET FOR | 5939 | 1% | 2% | 3 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 52404 | 16% | 1% | 59 |
2 | SEMICONDUCTORS | 40500 | 16% | 1% | 57 |
3 | FIZIKA TVERDOGO TELA | 8329 | 9% | 0% | 33 |
4 | IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA | 3797 | 4% | 0% | 15 |
5 | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 3781 | 3% | 0% | 12 |
6 | NANO | 2599 | 1% | 1% | 5 |
7 | DEFECT AND DIFFUSION FORUM/JOURNAL | 2195 | 1% | 1% | 3 |
8 | IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK | 1862 | 0% | 2% | 1 |
9 | DEFECT AND DIFFUSION FORUM SERIES | 1753 | 1% | 1% | 2 |
10 | ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1596 | 3% | 0% | 11 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | BAGRAEV, NT , GETS, DS , DANILOVSKY, EY , KLYACHKIN, LE , MALYARENKO, AM , (2013) ON THE ELECTRICALLY DETECTED CYCLOTRON RESONANCE OF HOLES IN SILICON NANOSTRUCTURES.SEMICONDUCTORS. VOL. 47. ISSUE 4. P. 525-531 | 13 | 68% | 0 |
2 | PANKRATOV, EL , (2009) LOCAL DOPING AND OPTIMAL ANNEALING OF A MESH MULTILAYER STRUCTURE TO DECREASE THE SPATIAL DIMENSIONS OF INTEGRATED P-N-JUNCTIONS.NANO. VOL. 4. ISSUE 5. P. 303-323 | 9 | 90% | 0 |
3 | PANKRATOV, EL , (2010) OPTIMIZATION OF ANNEALING FOR DECREASING OF DEPTH OF SYSTEM OF SERIAL P-N-JUNCTIONS IN A HETEROSTRUCTURE.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. VOL. 7. ISSUE 6. P. 1011-1020 | 8 | 80% | 0 |
4 | PANKRATOV, EL , (2008) REDISTRIBUTION OF INFUSED AND IMPLANTED DOPANTS IN A MULTILAYER STRUCTURE DURING ANNEALING OF DOPANT AND RADIATION DEFECTS FOR THE PRODUCTION OF A SYSTEM OF P-N JUNCTIONS (RETRACTED ARTICLE. SEE VOL. 42, PG. NIL_413, 2009).SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 23. ISSUE 9. P. - | 8 | 80% | 0 |
5 | PANKRATOV, EL , (2011) APPLICATION OF POROUS LAYERS AND OPTIMIZATION OF ANNEALING OF DOPANT AND RADIATION DEFECTS TO INCREASE SHARPNESS OF P-N-JUNCTIONS IN A BIPOLAR HETEROTRANSISTORS.JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS. VOL. 6. ISSUE 2. P. 188-206 | 8 | 73% | 0 |
6 | BAGRAEV, NT , KUZMIN, RV , GURIN, AS , KLYACHKIN, LE , MALYARENKO, AM , MASHKOV, VA , (2014) OPTICALLY DETECTED CYCLOTRON RESONANCE IN HEAVILY BORON-DOPED SILICON NANOSTRUCTURES ON N-SI (100).SEMICONDUCTORS. VOL. 48. ISSUE 12. P. 1605 -1612 | 9 | 56% | 0 |
7 | KLYACHKIN, LE , KOUDRYAVTSEV, AA , MALYARENKO, AM , ROMANOV, VV , BAGRAEV, NT , (2009) SUPERCONDUCTING PROPERTIES OF SILICON NANOSTRUCTURES.SEMICONDUCTORS. VOL. 43. ISSUE 11. P. 1441 -1454 | 14 | 40% | 5 |
8 | PANKRATOV, EL , (2012) DECREASING OF DEPTH OF P-N-JUNCTION IN A SEMICONDUCTOR HETEROSTRUCTURE BY SERIAL RADIATION PROCESSING AND MICROWAVE ANNEALING.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. VOL. 9. ISSUE 1. P. 41-49 | 6 | 86% | 2 |
9 | PANKRATOV, EL , (2010) DECREASING OF DEPTH OF IMPLANTED-JUNCTION RECTIFIER IN SEMICONDUCTOR HETEROSTRUCTURE BY OPTIMIZED LASER ANNEALING.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. VOL. 7. ISSUE 1. P. 289-295 | 8 | 67% | 0 |
10 | PANKRATOV, EL , (2011) APPLICATION OF RADIATION PROCESSING OF MATERIALS TO INCREASE SHARPNESS OF P-N-JUNCTION IN A SEMICONDUCTOR HETEROSTRUCTURE.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. VOL. 8. ISSUE 9. P. 1888-1894 | 6 | 86% | 0 |
Classes with closest relation at Level 1 |