Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 31721 | 149 | 13.6 | 26% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
| 648 | 2 | OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING | 13601 |
| 31721 | 1 | GLASS BEAD DESTRUCTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//STATE TORAT | 149 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | GLASS BEAD DESTRUCTION | authKW | 204936 | 1% | 100% | 1 |
| 2 | SOVIET PHYSICS SEMICONDUCTORS-USSR | journal | 71272 | 30% | 1% | 44 |
| 3 | STATE TORAT | address | 68311 | 1% | 33% | 1 |
| 4 | STOICHIOMETRY AND HOMOGENEITY | authKW | 18629 | 1% | 9% | 1 |
| 5 | ABDULLAEV PHYS | address | 14130 | 1% | 3% | 2 |
| 6 | SOVIET MICROELECTRONICS | journal | 6163 | 2% | 1% | 3 |
| 7 | SEMICONDUCTORS | journal | 3673 | 7% | 0% | 11 |
| 8 | GPI | address | 2695 | 1% | 1% | 1 |
| 9 | MOS STRUCTURE | authKW | 2226 | 1% | 1% | 1 |
| 10 | PHYSICS, CONDENSED MATTER | WoSSC | 1750 | 56% | 0% | 84 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 1750 | 56% | 0% | 84 |
| 2 | Physics, Applied | 312 | 31% | 0% | 46 |
| 3 | Materials Science, Multidisciplinary | 64 | 17% | 0% | 26 |
| 4 | Microscopy | 46 | 2% | 0% | 3 |
| 5 | Instruments & Instrumentation | 41 | 6% | 0% | 9 |
| 6 | Nuclear Science & Technology | 37 | 5% | 0% | 8 |
| 7 | Materials Science, Coatings & Films | 24 | 3% | 0% | 5 |
| 8 | Physics, Multidisciplinary | 18 | 7% | 0% | 10 |
| 9 | Electrochemistry | 15 | 3% | 0% | 5 |
| 10 | Engineering, Electrical & Electronic | 7 | 7% | 0% | 10 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | STATE TORAT | 68311 | 1% | 33% | 1 |
| 2 | ABDULLAEV PHYS | 14130 | 1% | 3% | 2 |
| 3 | GPI | 2695 | 1% | 1% | 1 |
| 4 | GEN PHYS | 514 | 2% | 0% | 3 |
| 5 | RADIAT | 333 | 1% | 0% | 2 |
| 6 | ESAT | 172 | 1% | 0% | 1 |
| 7 | AM PROKHOROV GEN PHYS | 139 | 1% | 0% | 1 |
| 8 | CENT S | 93 | 1% | 0% | 1 |
| 9 | S | 43 | 1% | 0% | 1 |
| 10 | SEMICOND | 26 | 1% | 0% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 71272 | 30% | 1% | 44 |
| 2 | SOVIET MICROELECTRONICS | 6163 | 2% | 1% | 3 |
| 3 | SEMICONDUCTORS | 3673 | 7% | 0% | 11 |
| 4 | ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE | 1100 | 1% | 1% | 1 |
| 5 | RADIATION EFFECTS LETTERS | 925 | 1% | 0% | 1 |
| 6 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 749 | 4% | 0% | 6 |
| 7 | INORGANIC MATERIALS | 542 | 3% | 0% | 5 |
| 8 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 489 | 5% | 0% | 7 |
| 9 | IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 304 | 1% | 0% | 1 |
| 10 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 303 | 1% | 0% | 2 |
Author Key Words |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | GLASS BEAD DESTRUCTION | 204936 | 1% | 100% | 1 | Search GLASS+BEAD+DESTRUCTION | Search GLASS+BEAD+DESTRUCTION |
| 2 | STOICHIOMETRY AND HOMOGENEITY | 18629 | 1% | 9% | 1 | Search STOICHIOMETRY+AND+HOMOGENEITY | Search STOICHIOMETRY+AND+HOMOGENEITY |
| 3 | MOS STRUCTURE | 2226 | 1% | 1% | 1 | Search MOS+STRUCTURE | Search MOS+STRUCTURE |
| 4 | INDIUM PHOSPHIDE | 1552 | 1% | 0% | 2 | Search INDIUM+PHOSPHIDE | Search INDIUM+PHOSPHIDE |
| 5 | MICROSPECTROSCOPY | 942 | 1% | 0% | 1 | Search MICROSPECTROSCOPY | Search MICROSPECTROSCOPY |
| 6 | LIGHT TRANSMISSION | 695 | 1% | 0% | 1 | Search LIGHT+TRANSMISSION | Search LIGHT+TRANSMISSION |
| 7 | CARRIER LIFETIME | 523 | 1% | 0% | 1 | Search CARRIER+LIFETIME | Search CARRIER+LIFETIME |
| 8 | NANOPATTERNING | 421 | 1% | 0% | 1 | Search NANOPATTERNING | Search NANOPATTERNING |
| 9 | RAYLEIGH SCATTERING | 418 | 1% | 0% | 1 | Search RAYLEIGH+SCATTERING | Search RAYLEIGH+SCATTERING |
| 10 | GALLIUM ARSENIDE | 350 | 1% | 0% | 2 | Search GALLIUM+ARSENIDE | Search GALLIUM+ARSENIDE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | KALINUSHKIN, VP , YURYEV, VA , ASTAFIEV, OV , (1999) ELASTIC MID-INFRARED LIGHT SCATTERING: A BASIS FOR MICROSCOPY OF LARGE-SCALE ELECTRICALLY ACTIVE DEFECTS IN SEMICONDUCTING MATERIALS.REVIEW OF SCIENTIFIC INSTRUMENTS. VOL. 70. ISSUE 11. P. 4331-4343 | 18 | 75% | 1 |
| 2 | KALINUSHKIN, VP , BUZYNIN, AN , MURIN, DI , YURYEV, VA , ASTAFEV, OV , (1997) APPLICATION OF ELASTIC MID-INFRARED LIGHT SCATTERING TO THE INVESTIGATION OF INTERNAL GETTERING IN CZOCHRALSKI-GROWN SILICON.SEMICONDUCTORS. VOL. 31. ISSUE 10. P. 994-998 | 11 | 100% | 0 |
| 3 | ASTAFIEV, OV , KALINUSHKIN, VP , YURYEV, VA , (2000) SCANNING MID-IR-LASER MICROSCOPY: AN EFFICIENT TOOL FOR MATERIALS STUDIES IN SILICON-BASED PHOTONICS AND PHOTOVOLTAICS.JOURNAL OF CRYSTAL GROWTH. VOL. 210. ISSUE 1-3. P. 361-365 | 6 | 86% | 1 |
| 4 | KALINUSHKIN, VP , ASTAFIEV, OV , YURYEV, VA , (2001) APPLICATION OF SCANNING MID-IR-LASER MICROSCOPY FOR CHARACTERIZATION OF SEMICONDUCTOR MATERIALS FOR PHOTOVOLTAICS.SOLAR ENERGY MATERIALS AND SOLAR CELLS. VOL. 65. ISSUE 1-4. P. 47-54 | 4 | 80% | 1 |
| 5 | BAKIROV, MY , SHAKHBAZOVA, RV , (2001) TRANSIENT BEHAVIOR OF PHOTOCONDUCTIVITY IN GE-SI SINGLE CRYSTALS.INORGANIC MATERIALS. VOL. 37. ISSUE 2. P. 99-101 | 3 | 100% | 0 |
| 6 | YURYEV, VA , KALINUSHKIN, VP , (1995) NEW INVESTIGATION OF III-V COMPOUNDS BY THE LOW-ANGLE MID-IR LIGHT-SCATTERING TECHNIQUE.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 33. ISSUE 2-3. P. 103-114 | 5 | 71% | 1 |
| 7 | ARTEMEV, VA , VITOVSKII, NA , MIKHNOVICH, VV , (1989) CLUSTERS OF POINT-DEFECTS AND THEIR INFLUENCE ON THE SCATTERING OF CARRIERS IN SEMICONDUCTORS.SOVIET PHYSICS SEMICONDUCTORS-USSR. VOL. 23. ISSUE 8. P. 868-871 | 4 | 100% | 1 |
| 8 | VITOVSKII, NA , MASHOVETS, TV , NALBANDYAN, LV , (1989) CLUSTERS OF COPPER ATOMS IN GERMANIUM.SOVIET PHYSICS SEMICONDUCTORS-USSR. VOL. 23. ISSUE 5. P. 574-575 | 4 | 100% | 0 |
| 9 | YUREV, VA , KALINUSHKIN, VP , ASTAFEV, OV , (1995) VISUALIZATION OF LARGE-SCALE CLUSTERS OF ELECTRICALLY ACTIVE DEFECTS IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE SINGLE-CRYSTALS.SEMICONDUCTORS. VOL. 29. ISSUE 3. P. 234-235 | 3 | 100% | 0 |
| 10 | SHAKHOVTSOVA, SI , SHAKHOVTSOV, KV , SHPINAR, LI , YASKOVETS, II , (1993) SCALE OF COMPOSITION FLUCTUATIONS IN GE1-XSIX ALLOYS.SEMICONDUCTORS. VOL. 27. ISSUE 6. P. 563-565 | 3 | 100% | 0 |
Classes with closest relation at Level 1 |