Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
1299 | 8578 | 21.0 | 69% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1299 | 2 | SIGE//STRAINED SI//VIRTUAL SUBSTRATE | 8578 |
3619 | 1 | SIGE//STRAINED SI//SILICON NANOSCI | 1944 |
5738 | 1 | STRAINED SI1 XGEX SI QUANTUM WELLS//SEGREGANT ASSISTED GROWTH//SI BASED NANOSTRUCTURES | 1581 |
5777 | 1 | GESN//GERMANIUM TIN//L NESS | 1576 |
7126 | 1 | ATOMIC LAYER DOPING//SELECTIVE EPITAXIAL GROWTH//SI EPITAXIAL GROWTH | 1402 |
15875 | 1 | SIGEC//SI1 YCY//SI1 X YGEXCY | 687 |
17136 | 1 | ARGON PLUS OXYGEN MIXTURE GAS//LATERAL CRYSTALLINE GROWTH//RUMENTAL FRONTIER | 615 |
18266 | 1 | CERAM PHYS//RIN//PIEZOSPECTROSCOPY | 559 |
28095 | 1 | GAAS1 XGE2X//ASYMMETRIC BANDGAP BOWING//FERROQUADRUPOLAR PHASE | 214 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SIGE | authKW | 421687 | 4% | 31% | 385 |
2 | STRAINED SI | authKW | 143380 | 1% | 41% | 99 |
3 | VIRTUAL SUBSTRATE | authKW | 110733 | 0% | 76% | 41 |
4 | GESN | authKW | 99334 | 0% | 85% | 33 |
5 | SILICON NANOSCI | address | 94575 | 1% | 53% | 50 |
6 | GERMANIUM | authKW | 84638 | 3% | 8% | 289 |
7 | PHYSICS, APPLIED | WoSSC | 83646 | 63% | 0% | 5362 |
8 | SILICON GERMANIUM | authKW | 83472 | 1% | 22% | 105 |
9 | STRAINED SILICON | authKW | 83420 | 1% | 35% | 68 |
10 | GERMANIUM TIN | authKW | 82352 | 0% | 93% | 25 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 83646 | 63% | 0% | 5362 |
2 | Materials Science, Coatings & Films | 31141 | 14% | 1% | 1204 |
3 | Physics, Condensed Matter | 28152 | 31% | 0% | 2656 |
4 | Materials Science, Multidisciplinary | 9667 | 26% | 0% | 2201 |
5 | Engineering, Electrical & Electronic | 8906 | 21% | 0% | 1778 |
6 | Crystallography | 2860 | 6% | 0% | 475 |
7 | Nanoscience & Nanotechnology | 2293 | 6% | 0% | 553 |
8 | Electrochemistry | 624 | 3% | 0% | 251 |
9 | Optics | 572 | 5% | 0% | 419 |
10 | Physics, Multidisciplinary | 440 | 5% | 0% | 436 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SILICON NANOSCI | 94575 | 1% | 53% | 50 |
2 | L NESS | 80455 | 1% | 27% | 85 |
3 | CERAM PHYS | 69647 | 1% | 29% | 67 |
4 | CRYSTAL SCI TECHNOL | 61295 | 1% | 30% | 58 |
5 | ADV S | 60924 | 1% | 29% | 59 |
6 | HALBLEITERTECH | 43797 | 1% | 18% | 70 |
7 | ELECT INTELLIGENT SYST | 25122 | 0% | 18% | 40 |
8 | SEMICOND PHOTON | 23717 | 0% | 20% | 33 |
9 | RIN | 23031 | 0% | 36% | 18 |
10 | NANOELECT SPINTRON | 17518 | 0% | 12% | 41 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | APPLIED PHYSICS LETTERS | 45175 | 14% | 1% | 1194 |
2 | THIN SOLID FILMS | 36448 | 7% | 2% | 615 |
3 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 21499 | 3% | 3% | 221 |
4 | SOLID-STATE ELECTRONICS | 17459 | 3% | 2% | 222 |
5 | JOURNAL OF APPLIED PHYSICS | 17256 | 9% | 1% | 736 |
6 | JOURNAL OF CRYSTAL GROWTH | 16253 | 4% | 1% | 383 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 13727 | 3% | 2% | 257 |
8 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 8601 | 1% | 3% | 90 |
9 | IEEE ELECTRON DEVICE LETTERS | 8178 | 2% | 2% | 146 |
10 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 7345 | 1% | 2% | 125 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SIGE | 421687 | 4% | 31% | 385 | Search SIGE | Search SIGE |
2 | STRAINED SI | 143380 | 1% | 41% | 99 | Search STRAINED+SI | Search STRAINED+SI |
3 | VIRTUAL SUBSTRATE | 110733 | 0% | 76% | 41 | Search VIRTUAL+SUBSTRATE | Search VIRTUAL+SUBSTRATE |
4 | GESN | 99334 | 0% | 85% | 33 | Search GESN | Search GESN |
5 | GERMANIUM | 84638 | 3% | 8% | 289 | Search GERMANIUM | Search GERMANIUM |
6 | SILICON GERMANIUM | 83472 | 1% | 22% | 105 | Search SILICON+GERMANIUM | Search SILICON+GERMANIUM |
7 | STRAINED SILICON | 83420 | 1% | 35% | 68 | Search STRAINED+SILICON | Search STRAINED+SILICON |
8 | GERMANIUM TIN | 82352 | 0% | 93% | 25 | Search GERMANIUM+TIN | Search GERMANIUM+TIN |
9 | STRAIN RELAXATION | 80597 | 1% | 27% | 84 | Search STRAIN+RELAXATION | Search STRAIN+RELAXATION |
10 | ATOMIC LAYER DOPING | 69716 | 0% | 70% | 28 | Search ATOMIC+LAYER+DOPING | Search ATOMIC+LAYER+DOPING |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | WIRTHS, S , BUCA, D , MANTL, S , (2016) SI-GE-SN ALLOYS: FROM GROWTH TO APPLICATIONS.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 62. ISSUE 1. P. 1 -39 | 133 | 74% | 9 |
2 | LEE, ML , FITZGERALD, EA , BULSARA, MT , CURRIE, MT , LOCHTEFELD, A , (2005) STRAINED SI, SIGE, AND GE CHANNELS FOR HIGH-MOBILITY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 1. P. - | 77 | 73% | 509 |
3 | JAIN, SC , WILLIS, JR , BULLOUGH, R , (1990) A REVIEW OF THEORETICAL AND EXPERIMENTAL WORK ON THE STRUCTURE OF GEXSI1-X STRAINED LAYERS AND SUPERLATTICES, WITH EXTENSIVE BIBLIOGRAPHY.ADVANCES IN PHYSICS. VOL. 39. ISSUE 2. P. 127-190 | 182 | 67% | 110 |
4 | SAITO, S , AL-ATTILI, AZ , ODA, K , ISHIKAWA, Y , (2016) TOWARDS MONOLITHIC INTEGRATION OF GERMANIUM LIGHT SOURCES ON SILICON CHIPS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 31. ISSUE 4. P. - | 92 | 62% | 1 |
5 | JAIN, SC , WILLANDER, M , (2003) SILICON-GERMANIUM STRAINED LAYERS AND HETEROSTRUCTURES - SEMICONDUCTORS AND SEMIMETALS.SILICON-GERMANIUM STRAINED LAYERS AND HETEROSTRUCTURES. VOL. 74. ISSUE . P. 1 -+ | 155 | 55% | 0 |
6 | MICHEL, J , LIU, JF , KIMERLING, LC , (2010) HIGH-PERFORMANCE GE-ON-SI PHOTODETECTORS.NATURE PHOTONICS. VOL. 4. ISSUE 8. P. 527 -534 | 43 | 81% | 393 |
7 | SCHAFFLER, F , (1997) HIGH-MOBILITY SI AND GE STRUCTURES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 12. ISSUE 12. P. 1515-1549 | 77 | 73% | 548 |
8 | BOLKHOVITYANOV, YB , PCHELYAKOV, OP , SOKOLOV, LV , CHIKICHEV, SI , (2003) ARTIFICIAL GESI SUBSTRATES FOR HETEROEPITAXY: ACHIEVEMENTS AND PROBLEMS.SEMICONDUCTORS. VOL. 37. ISSUE 5. P. 493-518 | 104 | 69% | 24 |
9 | SHIRAKI, Y , SAKAI, A , (2005) FABRICATION TECHNOLOGY OF SIGE HETERO-STRUCTURES AND THEIR PROPERTIES.SURFACE SCIENCE REPORTS. VOL. 59. ISSUE 7-8. P. 153 -207 | 108 | 60% | 51 |
10 | WANG, JA , LEE, S , (2011) GE-PHOTODETECTORS FOR SI-BASED OPTOELECTRONIC INTEGRATION.SENSORS. VOL. 11. ISSUE 1. P. 696 -718 | 49 | 91% | 79 |
Classes with closest relation at Level 2 |