Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
5113 | 1671 | 23.7 | 63% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
648 | 2 | OXYGEN PRECIPITATION//OXYGEN PRECIPITATES//GETTERING | 13601 |
5113 | 1 | HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN ATOM TREATMENT | 1671 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HYDROGEN IN SILICON | authKW | 116937 | 0% | 80% | 8 |
2 | MULTIVACANCY | authKW | 99478 | 0% | 78% | 7 |
3 | HYDROGEN ATOM TREATMENT | authKW | 54816 | 0% | 100% | 3 |
4 | PLASMA INDUCED DEFECT | authKW | 54816 | 0% | 100% | 3 |
5 | HYDROGEN MOLECULE | authKW | 46118 | 1% | 11% | 24 |
6 | STRESS INDUCED ALIGNMENT | authKW | 41110 | 0% | 75% | 3 |
7 | HYDROGEN | authKW | 39838 | 10% | 1% | 175 |
8 | C H COMPLEXES | authKW | 36544 | 0% | 100% | 2 |
9 | DEEP P N JUNCTIONS | authKW | 36544 | 0% | 100% | 2 |
10 | ESR OF DONORS | authKW | 36544 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 15707 | 51% | 0% | 847 |
2 | Physics, Applied | 4567 | 35% | 0% | 581 |
3 | Materials Science, Multidisciplinary | 811 | 18% | 0% | 305 |
4 | Physics, Multidisciplinary | 497 | 10% | 0% | 159 |
5 | Materials Science, Coatings & Films | 167 | 3% | 0% | 46 |
6 | Nuclear Science & Technology | 123 | 3% | 0% | 55 |
7 | Engineering, Electrical & Electronic | 45 | 6% | 0% | 98 |
8 | Physics, Nuclear | 25 | 2% | 0% | 33 |
9 | Physics, Atomic, Molecular & Chemical | 16 | 3% | 0% | 44 |
10 | Crystallography | 15 | 1% | 0% | 25 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | OPT MAT CONDENSEE | 36544 | 0% | 100% | 2 |
2 | EXCELLENCE MICROELECT PHOTON | 32887 | 0% | 60% | 3 |
3 | ITTP | 32887 | 0% | 60% | 3 |
4 | ELECT ENGN LGBE | 24361 | 0% | 67% | 2 |
5 | SHERMAN FAIRCHILD | 20264 | 1% | 10% | 11 |
6 | BASIC PROC DEV | 18272 | 0% | 100% | 1 |
7 | CHAIR ELECT DEVICES LGBE | 18272 | 0% | 100% | 1 |
8 | ELE OCHIM CHIM SOLIDES INORGAN | 18272 | 0% | 100% | 1 |
9 | ELECT MAT DEVICES NARROSTRUCT | 18272 | 0% | 100% | 1 |
10 | ENGN SCI ELE MAT PROC | 18272 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICONDUCTORS AND SEMIMETALS | 12974 | 1% | 4% | 19 |
2 | PHYSICA B-CONDENSED MATTER | 11814 | 8% | 0% | 142 |
3 | PHYSICAL REVIEW B | 6936 | 15% | 0% | 255 |
4 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 5892 | 3% | 1% | 49 |
5 | APPLIED PHYSICS LETTERS | 3757 | 9% | 0% | 154 |
6 | SOLID STATE PHENOMENA | 3625 | 1% | 1% | 21 |
7 | JOURNAL OF APPLIED PHYSICS | 3199 | 8% | 0% | 140 |
8 | MATERIALS SCIENCE FORUM | 3080 | 3% | 0% | 55 |
9 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2598 | 2% | 0% | 34 |
10 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1930 | 3% | 0% | 47 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HYDROGEN IN SILICON | 116937 | 0% | 80% | 8 | Search HYDROGEN+IN+SILICON | Search HYDROGEN+IN+SILICON |
2 | MULTIVACANCY | 99478 | 0% | 78% | 7 | Search MULTIVACANCY | Search MULTIVACANCY |
3 | HYDROGEN ATOM TREATMENT | 54816 | 0% | 100% | 3 | Search HYDROGEN+ATOM+TREATMENT | Search HYDROGEN+ATOM+TREATMENT |
4 | PLASMA INDUCED DEFECT | 54816 | 0% | 100% | 3 | Search PLASMA+INDUCED+DEFECT | Search PLASMA+INDUCED+DEFECT |
5 | HYDROGEN MOLECULE | 46118 | 1% | 11% | 24 | Search HYDROGEN+MOLECULE | Search HYDROGEN+MOLECULE |
6 | STRESS INDUCED ALIGNMENT | 41110 | 0% | 75% | 3 | Search STRESS+INDUCED+ALIGNMENT | Search STRESS+INDUCED+ALIGNMENT |
7 | HYDROGEN | 39838 | 10% | 1% | 175 | Search HYDROGEN | Search HYDROGEN |
8 | C H COMPLEXES | 36544 | 0% | 100% | 2 | Search C+H+COMPLEXES | Search C+H+COMPLEXES |
9 | DEEP P N JUNCTIONS | 36544 | 0% | 100% | 2 | Search DEEP+P+N+JUNCTIONS | Search DEEP+P+N+JUNCTIONS |
10 | ESR OF DONORS | 36544 | 0% | 100% | 2 | Search ESR+OF+DONORS | Search ESR+OF+DONORS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CHEVALLIER, J , PAJOT, B , (2002) INTERACTION OF HYDROGEN WITH IMPURITIES AND DEFECTS IN SEMICONDUCTORS.DEFECT INTERACTION AND CLUSTERING IN SEMICONDUCTORS. VOL. 85-86. ISSUE . P. 203 -283 | 170 | 62% | 15 |
2 | ESTREICHER, SK , (1995) HYDROGEN-RELATED DEFECTS IN CRYSTALLINE SEMICONDUCTORS - A THEORISTS PERSPECTIVE.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 14. ISSUE 7-8. P. 319 -412 | 171 | 56% | 195 |
3 | PEARTON, SJ , (1994) HYDROGEN IN CRYSTALLINE SEMICONDUCTORS .1. SILICON.INTERNATIONAL JOURNAL OF MODERN PHYSICS B. VOL. 8. ISSUE 9. P. 1093 -1158 | 114 | 70% | 12 |
4 | PEARTON, SJ , CORBETT, JW , SHI, TS , (1987) HYDROGEN IN CRYSTALLINE SEMICONDUCTORS.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 43. ISSUE 3. P. 153 -195 | 86 | 59% | 720 |
5 | MYERS, SM , BASKES, MI , BIRNBAUM, HK , CORBETT, JW , DELEO, GG , ESTREICHER, SK , HALLER, EE , JENA, P , JOHNSON, NM , KIRCHHEIM, R , ET AL (1992) HYDROGEN INTERACTIONS WITH DEFECTS IN CRYSTALLINE SOLIDS.REVIEWS OF MODERN PHYSICS. VOL. 64. ISSUE 2. P. 559 -617 | 118 | 39% | 292 |
6 | HERRING, C , JOHNSON, NM , VAN DE WALLE, CG , (2001) ENERGY LEVELS OF ISOLATED INTERSTITIAL HYDROGEN IN SILICON.PHYSICAL REVIEW B. VOL. 64. ISSUE 12. P. - | 40 | 91% | 83 |
7 | BONAPASTA, AA , CAPIZZI, M , (1998) HYDROGEN AS A DEEP IMPURITY IN SEMICONDUCTORS AND ITS INTERACTION WITH DEEP CENTERS IN III-V COMPOUNDS.DEFECT AND DIFFUSION FORUM/JOURNAL. VOL. 159. ISSUE . P. 133 -174 | 70 | 64% | 2 |
8 | SIMOEN, E , HUANG, YL , MA, Y , LAUWAERT, J , CLAUWS, P , RAFI, JM , ULYASHIN, A , CLAEYS, C , (2009) WHAT DO WE KNOW ABOUT HYDROGEN-INDUCED THERMAL DONORS IN SILICON?.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 156. ISSUE 6. P. H434 -H442 | 45 | 67% | 19 |
9 | ULRICI, W , (2004) HYDROGEN-IMPURITY COMPLEXES IN III-V SEMICONDUCTORS.REPORTS ON PROGRESS IN PHYSICS. VOL. 67. ISSUE 12. P. 2233 -2286 | 67 | 51% | 10 |
10 | HILLER, M , LAVROV, EV , WEBER, J , (2006) RAMAN SCATTERING STUDY OF H-2 IN SI.PHYSICAL REVIEW B. VOL. 74. ISSUE 23. P. - | 33 | 97% | 9 |
Classes with closest relation at Level 1 |