Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
6921 | 1429 | 18.0 | 52% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
603 | 2 | JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING | 14085 |
6921 | 1 | MEV ION IMPLANTATION//COLD IMPLANTS//ELECTRON ANNEALING | 1429 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | MEV ION IMPLANTATION | authKW | 65108 | 1% | 38% | 8 |
2 | COLD IMPLANTS | authKW | 42733 | 0% | 100% | 2 |
3 | ELECTRON ANNEALING | authKW | 42733 | 0% | 100% | 2 |
4 | FIS ELECT ELE | address | 42733 | 0% | 100% | 2 |
5 | III N V | authKW | 42733 | 0% | 100% | 2 |
6 | RF DISSIPATION LOSS | authKW | 42733 | 0% | 100% | 2 |
7 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | journal | 30030 | 15% | 1% | 211 |
8 | IMPLANT ISOLATION | authKW | 28488 | 0% | 67% | 2 |
9 | AIIIBV SEMICONDUCTORS | authKW | 27468 | 0% | 43% | 3 |
10 | ELECTRICAL ISOLATION | authKW | 26701 | 0% | 25% | 5 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 10042 | 54% | 0% | 766 |
2 | Nuclear Science & Technology | 5781 | 19% | 0% | 273 |
3 | Instruments & Instrumentation | 4013 | 17% | 0% | 245 |
4 | Physics, Nuclear | 3434 | 15% | 0% | 217 |
5 | Physics, Atomic, Molecular & Chemical | 1764 | 15% | 0% | 212 |
6 | Physics, Condensed Matter | 1390 | 18% | 0% | 257 |
7 | Engineering, Electrical & Electronic | 783 | 16% | 0% | 227 |
8 | Materials Science, Coatings & Films | 601 | 5% | 0% | 73 |
9 | Materials Science, Multidisciplinary | 447 | 15% | 0% | 221 |
10 | Electrochemistry | 133 | 3% | 0% | 46 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | FIS ELECT ELE | 42733 | 0% | 100% | 2 |
2 | DETACHED STRUCT SUB KUZNETSOV SIBERIAN PHYSICO | 21367 | 0% | 100% | 1 |
3 | ESCUELA TECNOL INFORMAT | 21367 | 0% | 100% | 1 |
4 | INFM UNITA ROMAL | 21367 | 0% | 100% | 1 |
5 | JOINT OPEN NUCL ANALY TECHNIQUES | 21367 | 0% | 100% | 1 |
6 | LSI 2 NAKAHARA KU | 21367 | 0% | 100% | 1 |
7 | SEMICOND PROC TECHNOL GRP | 21367 | 0% | 100% | 1 |
8 | ELECT ENGN COMP MATH | 14242 | 0% | 33% | 2 |
9 | CAI IMPLANTAC ION | 10682 | 0% | 50% | 1 |
10 | ESCUELA TECNOL INFORMAC | 10682 | 0% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 30030 | 15% | 1% | 211 |
2 | JOURNAL OF APPLIED PHYSICS | 15350 | 19% | 0% | 277 |
3 | APPLIED PHYSICS LETTERS | 6342 | 13% | 0% | 183 |
4 | RADIATION EFFECTS AND DEFECTS IN SOLIDS | 3566 | 2% | 1% | 28 |
5 | JOURNAL OF ELECTRONIC MATERIALS | 3459 | 3% | 0% | 40 |
6 | ELECTRON DEVICE LETTERS | 2544 | 0% | 2% | 6 |
7 | SOLID-STATE ELECTRONICS | 2453 | 2% | 0% | 34 |
8 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2373 | 3% | 0% | 48 |
9 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 2193 | 2% | 0% | 32 |
10 | NUCLEAR INSTRUMENTS & METHODS | 1959 | 1% | 1% | 11 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | MEV ION IMPLANTATION | 65108 | 1% | 38% | 8 | Search MEV+ION+IMPLANTATION | Search MEV+ION+IMPLANTATION |
2 | COLD IMPLANTS | 42733 | 0% | 100% | 2 | Search COLD+IMPLANTS | Search COLD+IMPLANTS |
3 | ELECTRON ANNEALING | 42733 | 0% | 100% | 2 | Search ELECTRON+ANNEALING | Search ELECTRON+ANNEALING |
4 | III N V | 42733 | 0% | 100% | 2 | Search III+N+V | Search III+N+V |
5 | RF DISSIPATION LOSS | 42733 | 0% | 100% | 2 | Search RF+DISSIPATION+LOSS | Search RF+DISSIPATION+LOSS |
6 | IMPLANT ISOLATION | 28488 | 0% | 67% | 2 | Search IMPLANT+ISOLATION | Search IMPLANT+ISOLATION |
7 | AIIIBV SEMICONDUCTORS | 27468 | 0% | 43% | 3 | Search AIIIBV+SEMICONDUCTORS | Search AIIIBV+SEMICONDUCTORS |
8 | ELECTRICAL ISOLATION | 26701 | 0% | 25% | 5 | Search ELECTRICAL+ISOLATION | Search ELECTRICAL+ISOLATION |
9 | ION IMPLANTATION | 22692 | 5% | 1% | 76 | Search ION+IMPLANTATION | Search ION+IMPLANTATION |
10 | ACCEPTOR CONTROL | 21367 | 0% | 100% | 1 | Search ACCEPTOR+CONTROL | Search ACCEPTOR+CONTROL |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | PEARTON, SJ , (1993) ION-IMPLANTATION IN III-V SEMICONDUCTOR TECHNOLOGY.INTERNATIONAL JOURNAL OF MODERN PHYSICS B. VOL. 7. ISSUE 28. P. 4687 -4761 | 89 | 64% | 60 |
2 | RAO, MV , (1993) HIGH-ENERGY (MEV) ION-IMPLANTATION AND ITS DEVICE APPLICATIONS IN GAAS AND INP.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 40. ISSUE 6. P. 1053-1066 | 55 | 80% | 42 |
3 | WESCH, W , (1992) ION-IMPLANTATION IN III-V COMPOUNDS.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 68. ISSUE 1-4. P. 342-354 | 37 | 84% | 34 |
4 | DESNICA-FRANKOVIC, ID , (1999) DIFFERENT RECRYSTALLIZATION PATTERNS OF SI+ IMPLANTED GAAS.JOURNAL OF APPLIED PHYSICS. VOL. 85. ISSUE 11. P. 7587 -7596 | 34 | 72% | 7 |
5 | LIND, AG , ALDRIDGE, HL , HATEM, C , LAW, ME , JONES, KS , (2016) REVIEW-DOPANT SELECTION CONSIDERATIONS AND EQUILIBRIUM THERMAL PROCESSING LIMITS FOR N(+)-IN(0.)53GA(0.47)AS.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. VOL. 5. ISSUE 5. P. Q125 -Q131 | 37 | 37% | 1 |
6 | LIND, AG , ALDRIDGE, HL , JONES, KS , HATEM, C , (2015) CO-IMPLANTATION OF AL+, P+, AND S+ WITH SI+ IMPLANTS INTO IN0.53GA0.47AS.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 33. ISSUE 5. P. - | 28 | 51% | 2 |
7 | ALDRIDGE, H , LIND, AG , BOMBERGER, CC , PUZYREV, Y , ZIDE, JMO , PANTELIDES, ST , LAW, ME , JONES, KS , (2017) N-TYPE DOPING STRATEGIES FOR INGAAS.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 57. ISSUE . P. 39 -47 | 25 | 30% | 1 |
8 | ZOLLO, G , PIZZUTO, C , VITALI, G , KALITZOVA, M , MANNO, D , (2000) HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY OF ELEVATED TEMPERATURE ZN+ IMPLANTED AND LOW-POWER PULSED LASER ANNEALED GAAS.JOURNAL OF APPLIED PHYSICS. VOL. 88. ISSUE 4. P. 1806-1810 | 20 | 95% | 5 |
9 | WENDLER, E , BREEGER, B , SCHUBERT, C , WESCH, W , (1999) COMPARATIVE STUDY OF DAMAGE PRODUCTION IN ION IMPLANTED III-V-COMPOUNDS AT TEMPERATURES FROM 20 TO 420 K.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 147. ISSUE 1-4. P. 155-165 | 26 | 72% | 27 |
10 | STEPHENS, KG , (1983) DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. VOL. 209. ISSUE MAY. P. 589 -614 | 52 | 75% | 40 |
Classes with closest relation at Level 1 |