Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
47 | 93961 | 19.5 | 60% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | PHYSICS, APPLIED | WoSSC | 548521 | 49% | 4% | 46202 |
2 | JOURNAL OF CRYSTAL GROWTH | journal | 512464 | 8% | 23% | 7052 |
3 | PHYSICS, CONDENSED MATTER | WoSSC | 298269 | 30% | 4% | 28651 |
4 | HGCDTE | authKW | 239291 | 1% | 91% | 815 |
5 | SOVIET PHYSICS SEMICONDUCTORS-USSR | journal | 183718 | 2% | 32% | 1790 |
6 | APPLIED PHYSICS LETTERS | journal | 175234 | 8% | 7% | 7916 |
7 | JOURNAL OF ELECTRONIC MATERIALS | journal | 154779 | 2% | 23% | 2175 |
8 | CDTE | authKW | 149827 | 1% | 59% | 791 |
9 | JOURNAL OF APPLIED PHYSICS | journal | 144764 | 8% | 7% | 7095 |
10 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | journal | 137272 | 2% | 23% | 1854 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 548521 | 49% | 4% | 46202 |
2 | Physics, Condensed Matter | 298269 | 30% | 4% | 28651 |
3 | Engineering, Electrical & Electronic | 95062 | 20% | 2% | 19262 |
4 | Crystallography | 82110 | 9% | 4% | 8016 |
5 | Materials Science, Multidisciplinary | 70986 | 22% | 2% | 20441 |
6 | Materials Science, Coatings & Films | 31051 | 5% | 3% | 4310 |
7 | Physics, Multidisciplinary | 19139 | 8% | 1% | 7712 |
8 | Optics | 10732 | 6% | 1% | 5540 |
9 | Nanoscience & Nanotechnology | 7384 | 4% | 1% | 3748 |
10 | Instruments & Instrumentation | 1424 | 2% | 1% | 1998 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SHANGHAI TECH PHYS | 27863 | 1% | 19% | 474 |
2 | SEMICOND PHYS | 23545 | 1% | 12% | 641 |
3 | INFRARED IMAGING MAT DETECTORS | 22048 | 0% | 68% | 101 |
4 | AF IOFFE PHYSICOTECH | 21355 | 1% | 11% | 617 |
5 | PHYS | 18402 | 10% | 1% | 9272 |
6 | INFRARED PHYS | 15711 | 0% | 16% | 305 |
7 | SEMICOND | 15327 | 1% | 8% | 615 |
8 | MICROPHYS | 14795 | 0% | 71% | 65 |
9 | HIGH TECHNOL MAT | 11069 | 0% | 19% | 186 |
10 | MASPEC | 10820 | 0% | 35% | 96 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 512464 | 8% | 23% | 7052 |
2 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 183718 | 2% | 32% | 1790 |
3 | APPLIED PHYSICS LETTERS | 175234 | 8% | 7% | 7916 |
4 | JOURNAL OF ELECTRONIC MATERIALS | 154779 | 2% | 23% | 2175 |
5 | JOURNAL OF APPLIED PHYSICS | 144764 | 8% | 7% | 7095 |
6 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 137272 | 2% | 23% | 1854 |
7 | SEMICONDUCTORS | 102286 | 2% | 22% | 1474 |
8 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 78098 | 2% | 12% | 2043 |
9 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 74105 | 2% | 16% | 1517 |
10 | SOLID-STATE ELECTRONICS | 66940 | 2% | 15% | 1451 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HGCDTE | 239291 | 1% | 91% | 815 | Search HGCDTE | Search HGCDTE |
2 | CDTE | 149827 | 1% | 59% | 791 | Search CDTE | Search CDTE |
3 | GAAS | 119591 | 1% | 35% | 1061 | Search GAAS | Search GAAS |
4 | MOLECULAR BEAM EPITAXY | 112748 | 1% | 26% | 1350 | Search MOLECULAR+BEAM+EPITAXY | Search MOLECULAR+BEAM+EPITAXY |
5 | CDZNTE | 110758 | 0% | 83% | 416 | Search CDZNTE | Search CDZNTE |
6 | INGAAS | 76533 | 0% | 52% | 454 | Search INGAAS | Search INGAAS |
7 | GALLIUM ARSENIDE | 71616 | 1% | 31% | 722 | Search GALLIUM+ARSENIDE | Search GALLIUM+ARSENIDE |
8 | SEMICONDUCTING III V MATERIALS | 63267 | 1% | 33% | 604 | Search SEMICONDUCTING+III+V+MATERIALS | Search SEMICONDUCTING+III+V+MATERIALS |
9 | INP | 61595 | 1% | 39% | 489 | Search INP | Search INP |
10 | ZNSE | 59711 | 0% | 50% | 370 | Search ZNSE | Search ZNSE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | VURGAFTMAN, I , MEYER, JR , RAM-MOHAN, LR , (2001) BAND PARAMETERS FOR III-V COMPOUND SEMICONDUCTORS AND THEIR ALLOYS.JOURNAL OF APPLIED PHYSICS. VOL. 89. ISSUE 11. P. 5815 -5875 | 466 | 61% | 3429 |
2 | KUMAR, SG , RAO, KSRK , (2014) PHYSICS AND CHEMISTRY OF CDTE/CDS THIN FILM HETEROJUNCTION PHOTOVOLTAIC DEVICES: FUNDAMENTAL AND CRITICAL ASPECTS.ENERGY & ENVIRONMENTAL SCIENCE. VOL. 7. ISSUE 1. P. 45 -102 | 347 | 82% | 75 |
3 | DUTTA, PS , BHAT, HL , KUMAR, V , (1997) THE PHYSICS AND TECHNOLOGY OF GALLIUM ANTIMONIDE: AN EMERGING OPTOELECTRONIC MATERIAL.JOURNAL OF APPLIED PHYSICS. VOL. 81. ISSUE 9. P. 5821 -5870 | 197 | 87% | 449 |
4 | FRANCIOSI, A , VAN DE WALLE, CG , (1996) HETEROJUNCTION BAND OFFSET ENGINEERING.SURFACE SCIENCE REPORTS. VOL. 25. ISSUE 1-4. P. 1 -+ | 266 | 76% | 220 |
5 | FURDYNA, JK , (1988) DILUTED MAGNETIC SEMICONDUCTORS.JOURNAL OF APPLIED PHYSICS. VOL. 64. ISSUE 4. P. R29 -R64 | 158 | 90% | 1661 |
6 | BIEFELD, RM , (2002) THE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION AND PROPERTIES OF III-V ANTIMONY-BASED SEMICONDUCTOR MATERIALS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 36. ISSUE 4. P. 105 -142 | 185 | 95% | 67 |
7 | LAMBERTI, C , (2004) THE USE OF SYNCHROTRON RADIATION TECHNIQUES IN THE CHARACTERIZATION OF STRAINED SEMICONDUCTOR HETEROSTRUCTURES AND THIN FILMS.SURFACE SCIENCE REPORTS. VOL. 53. ISSUE 1-5. P. 1 -197 | 379 | 44% | 53 |
8 | HINKLE, CL , VOGEL, EM , YE, PD , WALLACE, RM , (2011) INTERFACIAL CHEMISTRY OF OXIDES ON INXGA(1-X)AS AND IMPLICATIONS FOR MOSFET APPLICATIONS.CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE. VOL. 15. ISSUE 5. P. 188-207 | 137 | 88% | 68 |
9 | DESNICA, UV , (1998) DOPING LIMITS IN II-VI COMPOUNDS - CHALLENGES, PROBLEMS AND SOLUTIONS.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 36. ISSUE 4. P. 291 -357 | 224 | 86% | 87 |
10 | AARDVARK, A , MASON, NJ , WALKER, PJ , (1997) THE GROWTH OF ANTIMONIDES BY MOVPE.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 35. ISSUE 2-4. P. 207-241 | 227 | 92% | 36 |
Classes with closest relation at Level 3 |