Class information for:
Level 1: DX CENTERS//DX CENTRES//PERSISTENT PHOTOEFFECTS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
7474 1363 20.2 58%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
603 2             JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING 14085
7474 1                   DX CENTERS//DX CENTRES//PERSISTENT PHOTOEFFECTS 1363

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 DX CENTERS authKW 661666 4% 62% 48
2 DX CENTRES authKW 100803 0% 75% 6
3 PERSISTENT PHOTOEFFECTS authKW 67204 0% 100% 3
4 ALGAAS authKW 57385 2% 9% 30
5 ALGAAS SN authKW 44803 0% 100% 2
6 NANOHETEROINTERFACE authKW 44803 0% 100% 2
7 OPTOELE MICROWAVE DEVICES DEV address 44803 0% 100% 2
8 PERSISTENT PHOTOCONDUCTIVITY authKW 39804 1% 15% 12
9 NEGATIVE U DEFECT authKW 29867 0% 67% 2
10 SEMICONDUCTOR SCIENCE AND TECHNOLOGY journal 28636 7% 1% 101

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Condensed Matter 7969 40% 0% 552
2 Physics, Applied 6583 45% 0% 614
3 Engineering, Electrical & Electronic 1019 18% 0% 246
4 Physics, Multidisciplinary 885 13% 0% 179
5 Materials Science, Multidisciplinary 755 19% 0% 262
6 Crystallography 97 3% 0% 40
7 Materials Science, Coatings & Films 48 2% 0% 25
8 Nanoscience & Nanotechnology 18 2% 0% 31
9 Instruments & Instrumentation 1 1% 0% 16
10 Optics 0 2% 0% 25

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 OPTOELE MICROWAVE DEVICES DEV 44803 0% 100% 2
2 ANAT STRUCT INTER ES 22401 0% 100% 1
3 CSIC CIENCIAS MAT MADRID 22401 0% 100% 1
4 IRC SEMICOND MAT ELE ELECT ENGN 22401 0% 100% 1
5 LENINSKII PROSP 53 22401 0% 100% 1
6 MICROSTRUCT MICROELE L2M 22401 0% 100% 1
7 PHYS SEMIDCOND COMPOSANTS ELECT 22401 0% 100% 1
8 SEMICOND COMPOSANTS ELECT 22401 0% 100% 1
9 SHERMAN FAIRCHILD 161 22401 0% 100% 1
10 XLIM C2 S2 22401 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28636 7% 1% 101
2 JOURNAL OF APPLIED PHYSICS 8294 15% 0% 200
3 ACTA PHYSICA POLONICA A 6886 4% 1% 60
4 PHYSICAL REVIEW B 3811 13% 0% 172
5 APPLIED PHYSICS LETTERS 3669 10% 0% 137
6 JOURNAL OF ELECTRONIC MATERIALS 2027 2% 0% 30
7 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 1981 2% 0% 33
8 INSTITUTE OF PHYSICS CONFERENCE SERIES 1885 2% 0% 29
9 SOLID-STATE ELECTRONICS 1737 2% 0% 28
10 SOLID STATE COMMUNICATIONS 1626 3% 0% 44

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 DX CENTERS 661666 4% 62% 48 Search DX+CENTERS Search DX+CENTERS
2 DX CENTRES 100803 0% 75% 6 Search DX+CENTRES Search DX+CENTRES
3 PERSISTENT PHOTOEFFECTS 67204 0% 100% 3 Search PERSISTENT+PHOTOEFFECTS Search PERSISTENT+PHOTOEFFECTS
4 ALGAAS 57385 2% 9% 30 Search ALGAAS Search ALGAAS
5 ALGAAS SN 44803 0% 100% 2 Search ALGAAS+SN Search ALGAAS+SN
6 NANOHETEROINTERFACE 44803 0% 100% 2 Search NANOHETEROINTERFACE Search NANOHETEROINTERFACE
7 PERSISTENT PHOTOCONDUCTIVITY 39804 1% 15% 12 Search PERSISTENT+PHOTOCONDUCTIVITY Search PERSISTENT+PHOTOCONDUCTIVITY
8 NEGATIVE U DEFECT 29867 0% 67% 2 Search NEGATIVE+U+DEFECT Search NEGATIVE+U+DEFECT
9 2 DIMENSIONAL ELECTRON GAS TRANSISTOR 22401 0% 100% 1 Search 2+DIMENSIONAL+ELECTRON+GAS+TRANSISTOR Search 2+DIMENSIONAL+ELECTRON+GAS+TRANSISTOR
10 AL03GA07AS 22401 0% 100% 1 Search AL03GA07AS Search AL03GA07AS

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 MOONEY, PM , (1990) DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS.JOURNAL OF APPLIED PHYSICS. VOL. 67. ISSUE 3. P. R1-R26 87 84% 564
2 MALLOY, KJ , KHACHATURYAN, K , (1993) DX AND RELATED DEFECTS IN SEMICONDUCTORS.IMPERFECTIONS IN III/V MATERIALS. VOL. 38. ISSUE . P. 235-291 82 82% 37
3 GHOSH, S , KUMAR, V , (1998) EVIDENCE FOR TWO SI-RELATED DX LIKE CENTERS IN ALXGA1-XAS AND GAAS.SOLID STATE COMMUNICATIONS. VOL. 106. ISSUE 3. P. 163 -168 35 97% 0
4 ZEMAN, J , ZIGONE, M , MARTINEZ, G , (1995) OPTICAL INVESTIGATION OF THE DX CENTERS IN GAAS UNDER HYDROSTATIC-PRESSURE.PHYSICAL REVIEW B. VOL. 51. ISSUE 24. P. 17551-17560 35 100% 5
5 JIA, YB , GRIMMEISS, HG , (1996) METASTABLE STATES OF SI DONORS IN ALXGA1-XAS.JOURNAL OF APPLIED PHYSICS. VOL. 80. ISSUE 8. P. 4395-4399 33 100% 2
6 BOUZRARA, L , AJJEL, R , MEJRI, H , ZAIDI, MA , MAAREF, H , (2006) ALLOY SPLITTING OF TE-DX IN ALXGA1-XAS ANALYSIS USING THE DEEP LEVEL TRANSIENT SPECTROSCOPY TECHNIQUE.MICROELECTRONICS JOURNAL. VOL. 37. ISSUE 7. P. 586-590 23 92% 1
7 PAVESI, L , GUZZI, M , (1994) PHOTOLUMINESCENCE OF ALXGA1-XAS ALLOYS.JOURNAL OF APPLIED PHYSICS. VOL. 75. ISSUE 10. P. 4779 -4842 67 31% 357
8 CHADI, DJ , (1992) TETRAHEDRALLY SYMMETRICAL DX-LIKE STATES OF SUBSTITUTIONAL DONORS IN GAAS AND ALXGA1-XAS ALLOYS.PHYSICAL REVIEW B. VOL. 46. ISSUE 11. P. 6777-6780 32 94% 48
9 CALLEJA, E , GARCIA, F , ROMERO, AL , MUNOZ, E , POWELL, AL , ROCKETT, PI , BUTTON, CC , ROBERTS, JS , (1992) DX CENTER CHARACTERIZATION IN SE-DOPED ALGAAS UNDER HYDROSTATIC-PRESSURE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 7. ISSUE 6. P. 758-766 33 97% 2
10 CHANG, KJ , CHEONG, BH , (1995) STRUCTURE AND STABILITY OF THE DX-CENTERS IN GAAS AND INP.MODERN PHYSICS LETTERS B. VOL. 9. ISSUE 9. P. 511-530 32 86% 0

Classes with closest relation at Level 1


Rank Class id link
1 17770 VOLTCOULOMETRY//DLTS RESOLUTION//SEMI INSULATING MATERIALS
2 11353 DELTA DOPING//MULTISUBBAND ELECTRON MOBILITY//DELTA DOPED QUANTUM WELLS
3 23366 BISTABLE CENTERS//CDF2 IN//DIRECT IMAGE TRANSMISSION
4 3053 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//PSEUDOMORPHIC MODFET
5 14797 GA AS BI SOLUTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//ABZU
6 20163 CAPACITANCE VOLTAGE C V PROFILING//ELECTRICITY PROPERTIES//ELECTROCHEMICAL C V PROFILING
7 13364 GAP N//ALGAINP STQW LASER//CENTROTECH
8 1145 EL2//GAAS//SEMI INSULATING GAAS
9 22344 UNIP S HIGH P SURE PHYS//NANOPROBE INDENTATION//INGAAS DOT COUPLING
10 26048 BELOW GAP EXCITATION//OPT PL SCI TECH INGN//PHOTON RECYCLING

Go to start page