Class information for:
Level 1: DEFECTS IN INP//FIR PC//HEAVILY DOPED N GAAS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
22781 369 15.9 31%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
603 2             JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING 14085
22781 1                   DEFECTS IN INP//FIR PC//HEAVILY DOPED N GAAS 369

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 DEFECTS IN INP authKW 82751 0% 100% 1
2 FIR PC authKW 82751 0% 100% 1
3 HEAVILY DOPED N GAAS authKW 82751 0% 100% 1
4 LASER SCATTERING TOMOGRAPHY LST authKW 82751 0% 100% 1
5 LEC INP GROWTH authKW 82751 0% 100% 1
6 STUDIO INGN ROGANTE address 82751 0% 100% 1
7 SUBSTRATES STRESSES authKW 82751 0% 100% 1
8 ELET address 27582 0% 33% 1
9 FDN PESQUISA DESENVOLVIMENTO TELECOMUN address 27582 0% 33% 1
10 GAMMA RAY DIFFRACTION authKW 27582 0% 33% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Crystallography 4795 31% 0% 114
2 Materials Science, Multidisciplinary 1305 42% 0% 156
3 Physics, Applied 1074 36% 0% 132
4 Physics, Condensed Matter 318 17% 0% 63
5 Physics, Multidisciplinary 125 10% 0% 37
6 Materials Science, Characterization, Testing 96 2% 0% 8
7 Materials Science, Coatings & Films 67 4% 0% 13
8 Chemistry, Inorganic & Nuclear 63 6% 0% 21
9 Electrochemistry 43 4% 0% 13
10 COMPUTER APPLICATIONS & CYBERNETICS 30 0% 0% 1

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 STUDIO INGN ROGANTE 82751 0% 100% 1
2 ELET 27582 0% 33% 1
3 FDN PESQUISA DESENVOLVIMENTO TELECOMUN 27582 0% 33% 1
4 MUSASHINO ELECT COMMUN S 20686 0% 25% 1
5 RIC VENEZIA 16549 0% 20% 1
6 DQA 13790 0% 17% 1
7 CPQD 10342 0% 13% 1
8 ENGN OFF 4866 0% 6% 1
9 OMSK BRANCH 2118 1% 1% 2
10 LPD 1759 0% 2% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 KRISTALLOGRAFIYA 16822 8% 1% 28
2 JOURNAL OF CRYSTAL GROWTH 12697 19% 0% 69
3 INORGANIC MATERIALS 5526 7% 0% 25
4 IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA 5366 3% 1% 12
5 ZHURNAL NEORGANICHESKOI KHIMII 2508 5% 0% 17
6 CRYSTAL LATTICE DEFECTS 2506 0% 3% 1
7 SOVIET PHYSICS SEMICONDUCTORS-USSR 2119 3% 0% 12
8 INSTITUTE OF PHYSICS CONFERENCE SERIES 1890 4% 0% 15
9 CRYSTAL RESEARCH AND TECHNOLOGY 1525 3% 0% 11
10 JOURNAL OF ELECTRONIC MATERIALS 1209 3% 0% 12

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 DEFECTS IN INP 82751 0% 100% 1 Search DEFECTS+IN+INP Search DEFECTS+IN+INP
2 FIR PC 82751 0% 100% 1 Search FIR+PC Search FIR+PC
3 HEAVILY DOPED N GAAS 82751 0% 100% 1 Search HEAVILY+DOPED+N+GAAS Search HEAVILY+DOPED+N+GAAS
4 LASER SCATTERING TOMOGRAPHY LST 82751 0% 100% 1 Search LASER+SCATTERING+TOMOGRAPHY+LST Search LASER+SCATTERING+TOMOGRAPHY+LST
5 LEC INP GROWTH 82751 0% 100% 1 Search LEC+INP+GROWTH Search LEC+INP+GROWTH
6 SUBSTRATES STRESSES 82751 0% 100% 1 Search SUBSTRATES+STRESSES Search SUBSTRATES+STRESSES
7 GAMMA RAY DIFFRACTION 27582 0% 33% 1 Search GAMMA+RAY+DIFFRACTION Search GAMMA+RAY+DIFFRACTION
8 FE DOPED INP 16549 0% 20% 1 Search FE+DOPED+INP Search FE+DOPED+INP
9 TRANSITION METAL IMPURITY 7521 0% 9% 1 Search TRANSITION+METAL+IMPURITY Search TRANSITION+METAL+IMPURITY
10 LEC 5803 1% 4% 2 Search LEC Search LEC

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 MOROZOV, AN , MIKRYUKOVA, EV , BUBLIK, VT , BERKOVA, AV , NASHELSKII, AY , YAKOBSON, SV , (1988) PECULIARITIES OF DEFECTS FORMATION IN INP SINGLE-CRYSTALS DOPED WITH DONOR (S, GE) AND ACCEPTOR (ZN) IMPURITIES .1. EIGEN POINT-DEFECTS.KRISTALLOGRAFIYA. VOL. 33. ISSUE 5. P. 1213-1218 14 100% 2
2 NEUBERT, M , KWASNIEWSKI, A , FORNARI, R , (2008) ANALYSIS OF TWIN FORMATION IN SPHALERITE-TYPE COMPOUND SEMICONDUCTORS: A MODEL STUDY ON BULK INP USING STATISTICAL METHODS.JOURNAL OF CRYSTAL GROWTH. VOL. 310. ISSUE 24. P. 5270-5277 6 86% 3
3 WAGNER, G , GOTTSCHALCH, V , (1986) DEFECTS IN LEC-GROWN INDIUM-PHOSPHIDE CRYSTALS DOPED WITH TIN.CRYSTAL RESEARCH AND TECHNOLOGY. VOL. 21. ISSUE 7. P. 881-890 13 93% 3
4 BUBLIK, VT , SHCHERBACHEV, KD , (1998) X-RAY DIFFRACTION METHODS IN THE STUDY OF POINT DEFECTS AND MICROSCOPIC DEFECTS IN SEMICONDUCTOR COMPOUNDS (REVIEW).INDUSTRIAL LABORATORY. VOL. 64. ISSUE 5. P. 306 -316 10 63% 0
5 SEMENOVA, GV , SIDOROV, AV , GONCHAROV, EG , (1999) DETERMINATION OF NONSTOICHIOMETRY OF THE IN1-DELTA(AS1-XPX)(1+DELTA) SOLID SOLUTION.RUSSIAN JOURNAL OF INORGANIC CHEMISTRY. VOL. 44. ISSUE 4. P. 489-491 6 100% 0
6 MIKRYUKOVA, EV , MOROZOV, AN , BERKOVA, AV , NASHELSKII, AY , YAKOBSON, SV , (1988) PECULIARITIES OF DEFECTS FORMATION IN INP SINGLE-CRYSTALS DOPED WITH DONOR (S, GE) AND ACCEPTOR (ZN) IMPURITIES .2. MICRODEFECTS AND DISLOCATIONS.KRISTALLOGRAFIYA. VOL. 33. ISSUE 5. P. 1219-1226 11 85% 0
7 BUBLIK, VT , MOROZOV, AN , SMIRNOV, VM , MILVIDSKAYA, AG , KOLCHINA, GP , SAFONOV, YS , (1992) INTRINSIC POINT-DEFECTS AND MICRODEFECTS IN GASB CRYSTALS DOPED WITH ELECTRIC ACTIVE IMPURITIES (SI, GE, TE).KRISTALLOGRAFIYA. VOL. 37. ISSUE 3. P. 784-790 7 100% 1
8 BROWN, GT , (1987) THE MICROSCOPY OF BULK-GROWN-III-V SEMICONDUCTOR-MATERIALS.ANNUAL REVIEW OF MATERIALS SCIENCE. VOL. 17. ISSUE . P. 123-148 21 41% 5
9 BROWN, GT , COCKAYNE, B , ELLIOTT, CR , REGNAULT, JC , STIRLAND, DJ , AUGUSTUS, PD , (1984) A DETAILED MICROSCOPIC EXAMINATION OF DISLOCATION CLUSTERS IN LEC INP.JOURNAL OF CRYSTAL GROWTH. VOL. 67. ISSUE 3. P. 495-506 10 91% 4
10 KNAUER, A , KRAUSSLICH, J , KITTNER, R , STASKE, R , BARWOLFF, A , (1990) LATTICE-PARAMETER VARIATION IN INP RELATED TO THE DOPANT ELEMENT AND DOPING LEVEL.CRYSTAL RESEARCH AND TECHNOLOGY. VOL. 25. ISSUE 4. P. 441-449 8 80% 1

Classes with closest relation at Level 1


Rank Class id link
1 14548 SEMI INSULATING//SEMI INSULATING INP//MAT COMPONENTS S
2 25791 TEXTURED INTERFACE//MICRORELIEF INTERFACE//BEIJING CONDENSD MATTER PHYS
3 35867 ELECTRONIC RADIATION//ELECTRON CHANNELING EFFECT//RUMENTAT MESU
4 1145 EL2//GAAS//SEMI INSULATING GAAS
5 31096 ALGAAS DIODES//ALGAASSI//P DEGREES REGION
6 25556 MAGNET SENSOR//RADIATION RESISTANT HALL SENSORS//OBNINSK BRANCH
7 23027 ACCEPTOR DIFFUSION//CHEM PHYS LUCAS HTS S//ZINC DIFFUSION
8 14797 GA AS BI SOLUTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//ABZU
9 28325 OVAL DEFECTS//INDIRECT GAP ALGAAS EPILAYERS//SEEIE
10 36508 110 PLANES//ATOMS MOVEMENT ENERGY//BIOCIDE GLASS

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