Class information for:
Level 1: OVAL DEFECTS//INDIRECT GAP ALGAAS EPILAYERS//SEEIE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
28325 209 17.4 58%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
603 2             JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING 14085
28325 1                   OVAL DEFECTS//INDIRECT GAP ALGAAS EPILAYERS//SEEIE 209

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 OVAL DEFECTS authKW 478148 3% 55% 6
2 INDIRECT GAP ALGAAS EPILAYERS authKW 292205 1% 100% 2
3 SEEIE address 194802 1% 67% 2
4 AND CHEMICAL BEAM EPITAXY authKW 146102 0% 100% 1
5 BL RF PROD address 146102 0% 100% 1
6 BU MULTIMARKET SEGMENTS address 146102 0% 100% 1
7 CUPT ORDERED ALGAAS authKW 146102 0% 100% 1
8 DEFECT INCORPORATION authKW 146102 0% 100% 1
9 INNOVAT RF BU MOBILE PERSONAL address 146102 0% 100% 1
10 MESASTRIPE STRUCTURE authKW 146102 0% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 2254 66% 0% 137
2 Crystallography 722 16% 0% 34
3 Materials Science, Multidisciplinary 497 35% 0% 74
4 Materials Science, Coatings & Films 184 7% 0% 15
5 Physics, Condensed Matter 184 17% 0% 36
6 Nanoscience & Nanotechnology 124 9% 0% 19
7 Engineering, Electrical & Electronic 105 15% 0% 32
8 Physics, Multidisciplinary 99 11% 0% 24
9 Microscopy 58 2% 0% 4
10 Electrochemistry 21 3% 0% 7

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEEIE 194802 1% 67% 2
2 BL RF PROD 146102 0% 100% 1
3 BU MULTIMARKET SEGMENTS 146102 0% 100% 1
4 INNOVAT RF BU MOBILE PERSONAL 146102 0% 100% 1
5 MF STELMAKH POLYUS 48699 0% 33% 1
6 CIDS IC 24349 0% 17% 1
7 DPTO ING ELECT 16232 0% 11% 1
8 CIDS 13587 1% 5% 2
9 OURCE IL SUBMICRON STRUCT 9738 0% 7% 1
10 MICROELECT DEVICE INTEGRATED TECHNOL 7303 0% 5% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF CRYSTAL GROWTH 4512 15% 0% 31
2 INSTITUTE OF PHYSICS CONFERENCE SERIES 2520 6% 0% 13
3 SOLAR CELLS 1374 1% 0% 3
4 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 1107 1% 0% 3
5 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1049 5% 0% 11
6 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 1040 1% 0% 2
7 MICROELECTRONICS RELIABILITY 751 3% 0% 6
8 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 706 3% 0% 6
9 CANADIAN JOURNAL OF PHYSICS 590 2% 0% 5
10 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 429 3% 0% 6

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 OVAL DEFECTS 478148 3% 55% 6 Search OVAL+DEFECTS Search OVAL+DEFECTS
2 INDIRECT GAP ALGAAS EPILAYERS 292205 1% 100% 2 Search INDIRECT+GAP+ALGAAS+EPILAYERS Search INDIRECT+GAP+ALGAAS+EPILAYERS
3 AND CHEMICAL BEAM EPITAXY 146102 0% 100% 1 Search AND+CHEMICAL+BEAM+EPITAXY Search AND+CHEMICAL+BEAM+EPITAXY
4 CUPT ORDERED ALGAAS 146102 0% 100% 1 Search CUPT+ORDERED+ALGAAS Search CUPT+ORDERED+ALGAAS
5 DEFECT INCORPORATION 146102 0% 100% 1 Search DEFECT+INCORPORATION Search DEFECT+INCORPORATION
6 MESASTRIPE STRUCTURE 146102 0% 100% 1 Search MESASTRIPE+STRUCTURE Search MESASTRIPE+STRUCTURE
7 MULTIPLE NANOSCALE TWIN BOUNDARIES 146102 0% 100% 1 Search MULTIPLE+NANOSCALE+TWIN+BOUNDARIES Search MULTIPLE+NANOSCALE+TWIN+BOUNDARIES
8 MULTIPLE NANOSCALE TWIN BOUNDARIES OF SIGMA 3 TYPE 146102 0% 100% 1 Search MULTIPLE+NANOSCALE+TWIN+BOUNDARIES+OF+SIGMA+3+TYPE Search MULTIPLE+NANOSCALE+TWIN+BOUNDARIES+OF+SIGMA+3+TYPE
9 NANOSCALE MULTIPLE TWINS 146102 0% 100% 1 Search NANOSCALE+MULTIPLE+TWINS Search NANOSCALE+MULTIPLE+TWINS
10 POLARIZED CATHODOLUMINESCENCE SPECTROSCOPY 146102 0% 100% 1 Search POLARIZED+CATHODOLUMINESCENCE+SPECTROSCOPY Search POLARIZED+CATHODOLUMINESCENCE+SPECTROSCOPY

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 TAKAHASHI, K , KAWADA, H , UEDA, S , FURUSE, M , SHIRAYONE, S , (1991) THE ORIGINS AND ELIMINATION OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 9. ISSUE 3. P. 854-857 28 97% 4
2 HUANG, Z , GUELTON, N , COSSEMENT, D , GUAY, D , STJACQUES, RG , DODELET, JP , (1993) OPTIMIZATION OF THE SURFACE-MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWN BY CLOSE-SPACED VAPOR TRANSPORT.CANADIAN JOURNAL OF PHYSICS. VOL. 71. ISSUE 9-10. P. 462-469 25 83% 1
3 CHAND, N , CHU, SNG , (1990) A COMPREHENSIVE STUDY AND METHODS OF ELIMINATION OF OVAL DEFECTS IN MBE-GAAS.JOURNAL OF CRYSTAL GROWTH. VOL. 104. ISSUE 2. P. 485-497 25 83% 23
4 KAWADA, H , SHIRAYONE, S , TAKAHASHI, K , (1993) REDUCTION OF SURFACE-DEFECTS IN GAAS-LAYERS GROWN BY MBE.JOURNAL OF CRYSTAL GROWTH. VOL. 128. ISSUE 1-4. P. 550-556 18 100% 9
5 KANIEWSKA, M , KLIMA, K , (2002) INVESTIGATIONS OF SURFACE DEFECTS OF GAAS GROWN BY MOLECULAR BEAM EPITAXY.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 91. ISSUE . P. 512 -515 16 80% 3
6 KADHIM, NJ , MUKHERJEE, D , (1999) GROWTH DEFECTS ASSOCIATED WITH MBE DEPOSITED GAAS LAYERS.VACUUM. VOL. 55. ISSUE 3-4. P. 249 -253 16 80% 3
7 MEHTA, SK , MURALIDHARAN, R , SHARDA, GD , JAIN, RK , (1992) SOME INVESTIGATIONS ON OVAL DEFECTS IN MBE-GROWN GAAS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 7. ISSUE 5. P. 635-640 17 85% 7
8 SZERLING, A , KOSIEL, K , WOJCIK-JEDLINSKA, A , PLUSKA, M , BUGAJSKI, M , (2005) PROPERTIES AND ORIGIN OF OVAL DEFECTS IN EPITAXIAL STRUCTURES GROWN BY MOLECULAR BEAM EPITAXY.OPTICA APPLICATA. VOL. 35. ISSUE 3. P. 537 -548 9 100% 3
9 BOUCHER, JW , GREENAWAY, AL , EGELHOFER, KE , BOETTCHER, SW , (2017) ANALYSIS OF PERFORMANCE-LIMITING DEFECTS IN PN JUNCTION GAAS SOLAR CELLS GROWN BY WATER-MEDIATED CLOSE-SPACED VAPOR TRANSPORT EPITAXY.SOLAR ENERGY MATERIALS AND SOLAR CELLS. VOL. 159. ISSUE . P. 546 -552 12 52% 0
10 SZERLING, A , KOSIEL, K , WOJCIK-JEDLINSKA, A , PLUSKA, M , BUGAJSKI, M , (2006) INVESTIGATION OF OVAL DEFECTS IN (IN)GA(AL)AS/GAAS HETERO STRUCTURES BY SPATIALLY RESOLVED PHOTOLUMINESCENCE AND MICRO-CATHODOLUMINESCENCE.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 9. ISSUE 1-3. P. 25 -30 8 100% 2

Classes with closest relation at Level 1


Rank Class id link
1 14797 GA AS BI SOLUTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//ABZU
2 13299 ECR HYDROGEN PLASMA//ELECTROMAGNETIC GREENS FUNCTION//IN SITU VACUUM PROCESS
3 26673 EFFUSION MOLECULAR BEAM//HIGH VACUUM CHEMICAL VAPOR DEPOSITION//ANGULAR DISTRIBUTION MODELING
4 7568 REFLECTION MASS SPECTROMETRY//ROOT 19X ROOT 19//111B
5 1618 JOURNAL OF CRYSTAL GROWTH//TRIMETHYLINDIUM//MOMBE
6 37143 DAP AND BAND BAND RECOMBINATION//NINSB NPBTE NCDTE ISOTYPE STRUCTURE//NINSB NPBTE NCDTE STRUCTURE
7 36508 110 PLANES//ATOMS MOVEMENT ENERGY//BIOCIDE GLASS
8 22781 DEFECTS IN INP//FIR PC//HEAVILY DOPED N GAAS
9 3121 GAAS ON SI//GAAS SI//GAAS GE
10 8164 MISFIT DISLOCATION//ULTRAHIGH FREQUENCY SEMICOND ELECT//METAMORPHIC BUFFER

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