Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
247 | 19852 | 19.0 | 72% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | GAINNAS | authKW | 225776 | 1% | 88% | 168 |
2 | JOURNAL OF CRYSTAL GROWTH | journal | 218670 | 11% | 7% | 2109 |
3 | DILUTE NITRIDES | authKW | 198970 | 1% | 86% | 151 |
4 | PHYSICS, APPLIED | WoSSC | 196797 | 63% | 1% | 12506 |
5 | MOLECULAR BEAM EPITAXY | authKW | 168476 | 4% | 15% | 753 |
6 | SEMICONDUCTING III V MATERIALS | authKW | 157403 | 2% | 24% | 435 |
7 | ANTIMONIDES | authKW | 150834 | 1% | 49% | 202 |
8 | GASB | authKW | 142597 | 1% | 55% | 170 |
9 | APPLIED PHYSICS LETTERS | journal | 125001 | 15% | 3% | 3015 |
10 | GAASN | authKW | 85568 | 0% | 90% | 62 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 196797 | 63% | 1% | 12506 |
2 | Physics, Condensed Matter | 43493 | 26% | 1% | 5112 |
3 | Crystallography | 34651 | 12% | 1% | 2336 |
4 | Materials Science, Multidisciplinary | 19297 | 24% | 0% | 4789 |
5 | Engineering, Electrical & Electronic | 15267 | 18% | 0% | 3625 |
6 | Nanoscience & Nanotechnology | 4775 | 6% | 0% | 1225 |
7 | Materials Science, Coatings & Films | 3925 | 4% | 0% | 727 |
8 | Optics | 2847 | 6% | 0% | 1273 |
9 | Physics, Multidisciplinary | 2089 | 6% | 0% | 1279 |
10 | Microscopy | 1250 | 1% | 1% | 193 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID STATE PHOTON | 46720 | 0% | 35% | 88 |
2 | HIGH TECHNOL MAT | 33520 | 1% | 15% | 147 |
3 | UMR 5214 | 26221 | 0% | 26% | 67 |
4 | QUANTUM DEVICES | 24826 | 0% | 20% | 83 |
5 | UNITE RECH HETEROEPITAXIES PLICAT | 22373 | 0% | 54% | 27 |
6 | INFRARED IMAGING MAT DETECTORS | 21752 | 0% | 31% | 46 |
7 | AF IOFFE PHYSICOTECH | 20222 | 1% | 5% | 272 |
8 | REED PHOTON | 18648 | 0% | 41% | 30 |
9 | SEMICOND PHYS NANOSTRUCT | 16560 | 0% | 47% | 23 |
10 | ADV MAT PHOTON GRP | 16221 | 0% | 81% | 13 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 218670 | 11% | 7% | 2109 |
2 | APPLIED PHYSICS LETTERS | 125001 | 15% | 3% | 3015 |
3 | JOURNAL OF APPLIED PHYSICS | 57649 | 10% | 2% | 2033 |
4 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 47251 | 4% | 4% | 723 |
5 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 44504 | 2% | 6% | 484 |
6 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 44329 | 3% | 6% | 535 |
7 | IEE PROCEEDINGS-OPTOELECTRONICS | 35702 | 1% | 17% | 139 |
8 | SEMICONDUCTORS | 27540 | 2% | 5% | 351 |
9 | JOURNAL OF ELECTRONIC MATERIALS | 22831 | 2% | 4% | 385 |
10 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 14071 | 2% | 3% | 338 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAINNAS | 225776 | 1% | 88% | 168 | Search GAINNAS | Search GAINNAS |
2 | DILUTE NITRIDES | 198970 | 1% | 86% | 151 | Search DILUTE+NITRIDES | Search DILUTE+NITRIDES |
3 | MOLECULAR BEAM EPITAXY | 168476 | 4% | 15% | 753 | Search MOLECULAR+BEAM+EPITAXY | Search MOLECULAR+BEAM+EPITAXY |
4 | SEMICONDUCTING III V MATERIALS | 157403 | 2% | 24% | 435 | Search SEMICONDUCTING+III+V+MATERIALS | Search SEMICONDUCTING+III+V+MATERIALS |
5 | ANTIMONIDES | 150834 | 1% | 49% | 202 | Search ANTIMONIDES | Search ANTIMONIDES |
6 | GASB | 142597 | 1% | 55% | 170 | Search GASB | Search GASB |
7 | GAASN | 85568 | 0% | 90% | 62 | Search GAASN | Search GAASN |
8 | GAAS ON SI | 81100 | 0% | 79% | 67 | Search GAAS+ON+SI | Search GAAS+ON+SI |
9 | QUANTUM WELLS | 80737 | 2% | 12% | 444 | Search QUANTUM+WELLS | Search QUANTUM+WELLS |
10 | INGAASN | 74099 | 0% | 86% | 56 | Search INGAASN | Search INGAASN |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | VURGAFTMAN, I , MEYER, JR , RAM-MOHAN, LR , (2001) BAND PARAMETERS FOR III-V COMPOUND SEMICONDUCTORS AND THEIR ALLOYS.JOURNAL OF APPLIED PHYSICS. VOL. 89. ISSUE 11. P. 5815 -5875 | 356 | 47% | 3429 |
2 | DUTTA, PS , BHAT, HL , KUMAR, V , (1997) THE PHYSICS AND TECHNOLOGY OF GALLIUM ANTIMONIDE: AN EMERGING OPTOELECTRONIC MATERIAL.JOURNAL OF APPLIED PHYSICS. VOL. 81. ISSUE 9. P. 5821 -5870 | 175 | 77% | 449 |
3 | AARDVARK, A , MASON, NJ , WALKER, PJ , (1997) THE GROWTH OF ANTIMONIDES BY MOVPE.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 35. ISSUE 2-4. P. 207-241 | 214 | 87% | 36 |
4 | BIEFELD, RM , (2002) THE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION AND PROPERTIES OF III-V ANTIMONY-BASED SEMICONDUCTOR MATERIALS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 36. ISSUE 4. P. 105 -142 | 166 | 85% | 67 |
5 | RAZEGHI, M , NGUYEN, BM , (2014) ADVANCES IN MID-INFRARED DETECTION AND IMAGING: A KEY ISSUES REVIEW.REPORTS ON PROGRESS IN PHYSICS. VOL. 77. ISSUE 8. P. - | 87 | 95% | 13 |
6 | GUNAPALA, SD , TING, DZY , SOIBEL, A , HOGLUND, L , NGUYEN, J , HILL, CJ , KHOSHAKHLAGH, A , (2011) TYPE-II SUPERLATTICE INFRARED DETECTORS.ADVANCES IN INFRARED PHOTODETECTORS. VOL. 84. ISSUE . P. 1 -57 | 105 | 83% | 30 |
7 | KLAR, PJ , (2003) RECENT DEVELOPMENTS IN METASTABLE DILUTE-N III-V SEMICONDUCTORS.PROGRESS IN SOLID STATE CHEMISTRY. VOL. 31. ISSUE 4. P. 301 -349 | 121 | 77% | 29 |
8 | HARRIS, JS , KUDRAWIEC, R , YUEN, HB , BANK, SR , BAE, HP , WISTEY, MA , JACKREL, D , PICKETT, ER , SARMIENTO, T , GODDARD, LL , ET AL (2007) DEVELOPMENT OF GAINNASSB ALLOYS: GROWTH, BAND STRUCTURE, OPTICAL PROPERTIES AND APPLICATIONS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 244. ISSUE 8. P. 2707 -2729 | 82 | 98% | 33 |
9 | VURGAFTMAN, I , WEIH, R , KAMP, M , MEYER, JR , CANEDY, CL , KIM, CS , KIM, M , BEWLEY, WW , MERRITT, CD , ABELL, J , ET AL (2015) INTERBAND CASCADE LASERS.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 48. ISSUE 12. P. - | 59 | 76% | 27 |
10 | BEANLAND, R , DUNSTAN, DJ , GOODHEW, PJ , (1996) PLASTIC RELAXATION AND RELAXED BUFFER LAYERS FOR SEMICONDUCTOR EPITAXY.ADVANCES IN PHYSICS. VOL. 45. ISSUE 2. P. 87-146 | 137 | 66% | 121 |
Classes with closest relation at Level 2 |