Class information for:
Level 1: EL2//GAAS//SEMI INSULATING GAAS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
1145 2820 19.7 53%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
603 2             JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING 14085
1145 1                   EL2//GAAS//SEMI INSULATING GAAS 2820

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 EL2 authKW 202311 1% 64% 29
2 GAAS authKW 64414 5% 4% 134
3 SEMI INSULATING GAAS authKW 56864 1% 31% 17
4 CARBON ACCEPTOR authKW 43305 0% 100% 4
5 SEMI INSULATING GALLIUM ARSENIDE authKW 43301 0% 67% 6
6 LOW EPD authKW 32479 0% 100% 3
7 SEMIINSULATING GALLIUM ARSENIDE authKW 32479 0% 100% 3
8 ACTIVATION EFFICIENCY authKW 24742 0% 57% 4
9 VCZ authKW 24600 0% 45% 5
10 GROUP III V EXCEPT NITRIDES authKW 24358 0% 75% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 17910 51% 0% 1442
2 Physics, Condensed Matter 8819 30% 0% 854
3 Crystallography 3293 10% 0% 275
4 Materials Science, Multidisciplinary 2337 23% 0% 637
5 Physics, Multidisciplinary 1198 11% 0% 310
6 Engineering, Electrical & Electronic 397 10% 0% 269
7 Materials Science, Coatings & Films 117 2% 0% 55
8 Nuclear Science & Technology 94 2% 0% 70
9 Instruments & Instrumentation 90 3% 0% 75
10 Materials Science, Characterization, Testing 63 1% 0% 21

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 FHM 20814 0% 38% 5
2 KHERSON BRANCH 16236 0% 50% 3
3 ADV TECNOL S 10826 0% 100% 1
4 AV DIRECTORATE 10826 0% 100% 1
5 BLACKETT INTERDISCIPLINARY SEMICOND 10826 0% 100% 1
6 CDPCNRSURA 250 10826 0% 100% 1
7 COMPOUND SEMICOND WAFER 10826 0% 100% 1
8 DEVICE MAT SECT 10826 0% 100% 1
9 DTDCNRSUMR 250 10826 0% 100% 1
10 ECOLE PREPARATOIRE 10826 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF APPLIED PHYSICS 18564 15% 0% 430
2 INSTITUTE OF PHYSICS CONFERENCE SERIES 13290 4% 1% 110
3 JOURNAL OF CRYSTAL GROWTH 12489 7% 1% 191
4 SOVIET PHYSICS SEMICONDUCTORS-USSR 11997 3% 1% 79
5 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 7017 3% 1% 89
6 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 6000 2% 1% 67
7 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 5379 2% 1% 61
8 APPLIED PHYSICS LETTERS 5095 8% 0% 234
9 REVUE DE PHYSIQUE APPLIQUEE 4695 1% 2% 24
10 CRYSTAL RESEARCH AND TECHNOLOGY 3758 2% 1% 48

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 EL2 202311 1% 64% 29 Search EL2 Search EL2
2 GAAS 64414 5% 4% 134 Search GAAS Search GAAS
3 SEMI INSULATING GAAS 56864 1% 31% 17 Search SEMI+INSULATING+GAAS Search SEMI+INSULATING+GAAS
4 CARBON ACCEPTOR 43305 0% 100% 4 Search CARBON+ACCEPTOR Search CARBON+ACCEPTOR
5 SEMI INSULATING GALLIUM ARSENIDE 43301 0% 67% 6 Search SEMI+INSULATING+GALLIUM+ARSENIDE Search SEMI+INSULATING+GALLIUM+ARSENIDE
6 LOW EPD 32479 0% 100% 3 Search LOW+EPD Search LOW+EPD
7 SEMIINSULATING GALLIUM ARSENIDE 32479 0% 100% 3 Search SEMIINSULATING+GALLIUM+ARSENIDE Search SEMIINSULATING+GALLIUM+ARSENIDE
8 ACTIVATION EFFICIENCY 24742 0% 57% 4 Search ACTIVATION+EFFICIENCY Search ACTIVATION+EFFICIENCY
9 VCZ 24600 0% 45% 5 Search VCZ Search VCZ
10 GROUP III V EXCEPT NITRIDES 24358 0% 75% 3 Search GROUP+III+V+EXCEPT+NITRIDES Search GROUP+III+V+EXCEPT+NITRIDES

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 BOURGOIN, JC , VONBARDELEBEN, HJ , STIEVENARD, D , (1988) NATIVE DEFECTS IN GALLIUM-ARSENIDE.JOURNAL OF APPLIED PHYSICS. VOL. 64. ISSUE 9. P. R65-R91 138 86% 223
2 MANASREH, MO , FISCHER, DW , MITCHEL, WC , (1989) THE EL2 DEFECT IN GAAS - SOME RECENT DEVELOPMENTS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 154. ISSUE 1. P. 11-41 108 96% 61
3 KAMINSKA, M , WEBER, ER , (1993) EL2 DEFECT IN GAAS.IMPERFECTIONS IN III/V MATERIALS. VOL. 38. ISSUE . P. 59-89 91 99% 36
4 TRAUTMAN, P , BARANOWSKI, JM , (1995) STRUCTURE AND METASTABILITY OF THE EL2 DEFECT IN GAAS.INTERNATIONAL JOURNAL OF MODERN PHYSICS B. VOL. 9. ISSUE 11. P. 1263-1312 81 93% 9
5 KOSCHNICK, FK , SPAETH, JM , (1999) STRUCTURAL ANALYSIS OF INTRINSIC DEFECTS IN GAAS AND A1(X)GAL(1-X)AS BY MAGNETOOPTICALLY DETECTED MAGNETIC RESONANCE SPECTROSCOPY.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 216. ISSUE 2. P. 817 -907 66 83% 15
6 TRAUTMAN, P , BAJ, M , BARANOWSKI, JM , (1998) HYDROSTATIC PRESSURE AND UNIAXIAL STRESS IN INVESTIGATIONS OF THE EL2 DEFECT IN GAAS.HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I. VOL. 54. ISSUE . P. 427-455 46 100% 0
7 MANASREH, MO , FISCHER, DW , (1989) INFRARED-ABSORPTION PROPERTIES OF THE EL2 AND THE ISOLATED ASGA DEFECTS IN NEUTRON-TRANSMUTATION-DOPED GAAS - GENERATION OF AN EL2-LIKE DEFECT.PHYSICAL REVIEW B. VOL. 39. ISSUE 5. P. 3239-3249 56 98% 21
8 SCHULTZ, PA , VON LILIENFELD, OA , (2009) SIMPLE INTRINSIC DEFECTS IN GALLIUM ARSENIDE.MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING. VOL. 17. ISSUE 8. P. - 46 56% 29
9 MITCHEL, WC , JIMENEZ, J , (1994) PHOTOCURRENT TRANSIENTS IN SEMIINSULATING GAAS, EFFECTS OF EL2 AND OTHER DEFECTS.JOURNAL OF APPLIED PHYSICS. VOL. 75. ISSUE 6. P. 3060-3070 44 100% 16
10 PAVLOVIC, M , DESNICA, UV , GLADIC, J , (2000) COMPLETE SET OF DEEP TRAPS IN SEMI-INSULATING GAAS.JOURNAL OF APPLIED PHYSICS. VOL. 88. ISSUE 8. P. 4563-4570 34 97% 16

Classes with closest relation at Level 1


Rank Class id link
1 22781 DEFECTS IN INP//FIR PC//HEAVILY DOPED N GAAS
2 17770 VOLTCOULOMETRY//DLTS RESOLUTION//SEMI INSULATING MATERIALS
3 14548 SEMI INSULATING//SEMI INSULATING INP//MAT COMPONENTS S
4 14797 GA AS BI SOLUTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//ABZU
5 6921 MEV ION IMPLANTATION//COLD IMPLANTS//ELECTRON ANNEALING
6 11102 LT GAAS//LOW TEMPERATURE GROWN GAAS//LOW TEMPERATURE GAAS
7 17203 GAAS MESFET//GATE LAG//DRAIN CURRENT TRANSIENT
8 26589 D LATTICE DYNAMICS//EDNR ELECTRICALLY DETECTED MAGNETIC RESONANCE//GAALNP
9 25556 MAGNET SENSOR//RADIATION RESISTANT HALL SENSORS//OBNINSK BRANCH
10 7474 DX CENTERS//DX CENTRES//PERSISTENT PHOTOEFFECTS

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