Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
1618 | 2566 | 19.7 | 62% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
603 | 2 | JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING | 14085 |
1618 | 1 | JOURNAL OF CRYSTAL GROWTH//TRIMETHYLINDIUM//MOMBE | 2566 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | journal | 299803 | 34% | 3% | 882 |
2 | TRIMETHYLINDIUM | authKW | 137666 | 1% | 64% | 18 |
3 | MOMBE | authKW | 90105 | 1% | 26% | 29 |
4 | MOLECULAR LAYER EPITAXY | authKW | 63452 | 0% | 67% | 8 |
5 | CHEMICAL BEAM EPITAXY CBE | authKW | 58569 | 0% | 62% | 8 |
6 | METALORGANICS | authKW | 58297 | 0% | 70% | 7 |
7 | ATOMIC LAYER EPITAXY | authKW | 57788 | 1% | 15% | 33 |
8 | TERTIARYBUTYLPHOSPHINE | authKW | 56647 | 0% | 48% | 10 |
9 | TRIMETHYLGALLIUM | authKW | 51461 | 1% | 29% | 15 |
10 | TRISDIMETHYLAMINOARSINE | authKW | 49574 | 0% | 83% | 5 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Crystallography | 45298 | 36% | 0% | 921 |
2 | Physics, Applied | 35854 | 74% | 0% | 1902 |
3 | Materials Science, Multidisciplinary | 11293 | 47% | 0% | 1198 |
4 | Materials Science, Coatings & Films | 2733 | 8% | 0% | 201 |
5 | Engineering, Electrical & Electronic | 856 | 13% | 0% | 335 |
6 | Physics, Condensed Matter | 627 | 10% | 0% | 263 |
7 | Electrochemistry | 161 | 3% | 0% | 71 |
8 | Physics, Multidisciplinary | 124 | 5% | 0% | 128 |
9 | Materials Science, Characterization, Testing | 82 | 1% | 0% | 22 |
10 | Nanoscience & Nanotechnology | 38 | 2% | 0% | 60 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | OMVPE IL | 38073 | 0% | 80% | 4 |
2 | SENDAI | 29991 | 1% | 19% | 13 |
3 | ENGN MECHATRON PRECIS ENGN | 23796 | 0% | 100% | 2 |
4 | ING ELECT SEES | 23796 | 0% | 100% | 2 |
5 | SECC PUEBLA | 23796 | 0% | 100% | 2 |
6 | SHIPLEY METALORGAN | 23796 | 0% | 100% | 2 |
7 | 55 TOHKODAI | 11898 | 0% | 100% | 1 |
8 | CIBA IPN | 11898 | 0% | 100% | 1 |
9 | COMPOUND SEMICOND MICROELE MAT | 11898 | 0% | 100% | 1 |
10 | ELE ELE O OPT MAT | 11898 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 299803 | 34% | 3% | 882 |
2 | JOURNAL OF ELECTRONIC MATERIALS | 22175 | 5% | 1% | 135 |
3 | ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES | 11419 | 0% | 14% | 7 |
4 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 10589 | 4% | 1% | 104 |
5 | APPLIED PHYSICS LETTERS | 7888 | 11% | 0% | 275 |
6 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 5213 | 3% | 1% | 66 |
7 | PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 4147 | 1% | 2% | 15 |
8 | JOURNAL OF APPLIED PHYSICS | 1755 | 5% | 0% | 132 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1750 | 0% | 3% | 5 |
10 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1633 | 2% | 0% | 49 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | TRIMETHYLINDIUM | 137666 | 1% | 64% | 18 | Search TRIMETHYLINDIUM | Search TRIMETHYLINDIUM |
2 | MOMBE | 90105 | 1% | 26% | 29 | Search MOMBE | Search MOMBE |
3 | MOLECULAR LAYER EPITAXY | 63452 | 0% | 67% | 8 | Search MOLECULAR+LAYER+EPITAXY | Search MOLECULAR+LAYER+EPITAXY |
4 | CHEMICAL BEAM EPITAXY CBE | 58569 | 0% | 62% | 8 | Search CHEMICAL+BEAM+EPITAXY+CBE | Search CHEMICAL+BEAM+EPITAXY+CBE |
5 | METALORGANICS | 58297 | 0% | 70% | 7 | Search METALORGANICS | Search METALORGANICS |
6 | ATOMIC LAYER EPITAXY | 57788 | 1% | 15% | 33 | Search ATOMIC+LAYER+EPITAXY | Search ATOMIC+LAYER+EPITAXY |
7 | TERTIARYBUTYLPHOSPHINE | 56647 | 0% | 48% | 10 | Search TERTIARYBUTYLPHOSPHINE | Search TERTIARYBUTYLPHOSPHINE |
8 | TRIMETHYLGALLIUM | 51461 | 1% | 29% | 15 | Search TRIMETHYLGALLIUM | Search TRIMETHYLGALLIUM |
9 | TRISDIMETHYLAMINOARSINE | 49574 | 0% | 83% | 5 | Search TRISDIMETHYLAMINOARSINE | Search TRISDIMETHYLAMINOARSINE |
10 | MOLECULAR LAYER EPITAXY MLE | 47593 | 0% | 100% | 4 | Search MOLECULAR+LAYER+EPITAXY+MLE | Search MOLECULAR+LAYER+EPITAXY+MLE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SMITH, FTJ , (1989) LOW-PRESSURE ORGANOMETALLIC EPITAXY OF THE III-V-COMPOUNDS.PROGRESS IN SOLID STATE CHEMISTRY. VOL. 19. ISSUE 2. P. 111-164 | 130 | 75% | 4 |
2 | ZANELLA, P , ROSSETTO, G , BRIANESE, N , OSSOLA, F , PORCHIA, M , WILLIAMS, JO , (1991) ORGANOMETALLIC PRECURSORS IN THE GROWTH OF EPITAXIAL THIN-FILMS OF GROUPS III-V SEMICONDUCTORS BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION.CHEMISTRY OF MATERIALS. VOL. 3. ISSUE 2. P. 225-242 | 95 | 67% | 63 |
3 | JONES, AC , (1993) METALORGANIC PRECURSORS FOR VAPOR-PHASE EPITAXY.JOURNAL OF CRYSTAL GROWTH. VOL. 129. ISSUE 3-4. P. 728 -773 | 91 | 60% | 86 |
4 | HOUNG, YM , (1992) CHEMICAL BEAM EPITAXY.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 17. ISSUE 4. P. 277-306 | 93 | 68% | 0 |
5 | OZEKI, M , (1992) ATOMIC LAYER EPITAXY OF III-V COMPOUNDS USING METALORGANIC AND HYDRIDE SOURCES.MATERIALS SCIENCE REPORTS. VOL. 8. ISSUE 3. P. 97-146 | 70 | 76% | 24 |
6 | MCELLISTREM, MT , JACKSON, MS , CULP, RD , EKERDT, JG , (2000) LIGAND LABILITY OF TRIETHYLGALLIUM ON GAAS(100).SURFACE SCIENCE. VOL. 448. ISSUE 2-3. P. 117-130 | 46 | 82% | 0 |
7 | LUDOWISE, MJ , (1985) METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS.JOURNAL OF APPLIED PHYSICS. VOL. 58. ISSUE 8. P. R31-R55 | 96 | 54% | 211 |
8 | YABLOKOV, VA , YABLOKOVA, NV , (1995) KINETICS OF THERMAL-DECOMPOSITION OF ALKYL DERIVATIVES OF III-GROUP AND V-GROUP ELEMENTS.USPEKHI KHIMII. VOL. 64. ISSUE 10. P. 1017-1031 | 53 | 80% | 1 |
9 | ABERNATHY, CR , (1995) COMPOUND SEMICONDUCTOR GROWTH BY METALLORGANIC MOLECULAR-BEAM EPITAXY (MOMBE).MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 14. ISSUE 5. P. 203-253 | 65 | 61% | 12 |
10 | BRAUERS, A , (1991) ALTERNATIVE PRECURSORS FOR III-V MOVPE - PROMISES AND PROBLEMS.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 22. ISSUE 1-2. P. 1-18 | 45 | 98% | 7 |
Classes with closest relation at Level 1 |