Class information for:
Level 1: SEMI INSULATING//SEMI INSULATING INP//MAT COMPONENTS S

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
14548 763 17.0 54%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
603 2             JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING 14085
14548 1                   SEMI INSULATING//SEMI INSULATING INP//MAT COMPONENTS S 763

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEMI INSULATING authKW 147034 3% 18% 21
2 SEMI INSULATING INP authKW 125055 1% 63% 5
3 MAT COMPONENTS S address 120056 0% 100% 3
4 PHOSPHORUS ANTISITE authKW 120056 0% 100% 3
5 INP authKW 119779 8% 5% 61
6 WAFER ANNEALING authKW 91468 1% 57% 4
7 HEBEI SEMICOND address 90041 0% 75% 3
8 PHOSPHORUS VAPOR PRESSURE authKW 90041 0% 75% 3
9 INP FILMS authKW 80037 0% 100% 2
10 PHOSPHORUS RICH authKW 80037 0% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 5390 54% 0% 410
2 Physics, Condensed Matter 3289 35% 0% 268
3 Materials Science, Multidisciplinary 841 25% 0% 194
4 Engineering, Electrical & Electronic 351 15% 0% 113
5 Crystallography 224 5% 0% 40
6 Materials Science, Coatings & Films 206 4% 0% 32
7 Nuclear Science & Technology 170 5% 0% 39
8 Instruments & Instrumentation 109 5% 0% 35
9 Physics, Nuclear 77 4% 0% 29
10 Physics, Multidisciplinary 58 6% 0% 44

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 MAT COMPONENTS S 120056 0% 100% 3
2 HEBEI SEMICOND 90041 0% 75% 3
3 CPD SEMICOND MAT 40019 0% 100% 1
4 ELE PHYS INTER ES 40019 0% 100% 1
5 ENIRISORSE 40019 0% 100% 1
6 IFM FOA 40019 0% 100% 1
7 IST ICTIMA 40019 0% 100% 1
8 MICROELECT 150 40019 0% 100% 1
9 QUANTUM SEMICOND 40019 0% 100% 1
10 UMR C5511 40019 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 REVUE TECHNIQUE THOMSON-CSF 23226 1% 10% 6
2 JOURNAL OF APPLIED PHYSICS 7329 18% 0% 140
3 SOVIET PHYSICS SEMICONDUCTORS-USSR 7307 4% 1% 32
4 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 4537 4% 0% 29
5 SOLAR CELLS 4179 1% 1% 10
6 OPTOELECTRONICS-DEVICES AND TECHNOLOGIES 3909 0% 3% 3
7 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 2388 5% 0% 35
8 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2185 3% 0% 21
9 JOURNAL OF CRYSTAL GROWTH 1712 5% 0% 37
10 JOURNAL OF ELECTRONIC MATERIALS 1617 3% 0% 20

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 SEMI INSULATING 147034 3% 18% 21 Search SEMI+INSULATING Search SEMI+INSULATING
2 SEMI INSULATING INP 125055 1% 63% 5 Search SEMI+INSULATING+INP Search SEMI+INSULATING+INP
3 PHOSPHORUS ANTISITE 120056 0% 100% 3 Search PHOSPHORUS+ANTISITE Search PHOSPHORUS+ANTISITE
4 INP 119779 8% 5% 61 Search INP Search INP
5 WAFER ANNEALING 91468 1% 57% 4 Search WAFER+ANNEALING Search WAFER+ANNEALING
6 PHOSPHORUS VAPOR PRESSURE 90041 0% 75% 3 Search PHOSPHORUS+VAPOR+PRESSURE Search PHOSPHORUS+VAPOR+PRESSURE
7 INP FILMS 80037 0% 100% 2 Search INP+FILMS Search INP+FILMS
8 PHOSPHORUS RICH 80037 0% 100% 2 Search PHOSPHORUS+RICH Search PHOSPHORUS+RICH
9 VINH4 80037 0% 100% 2 Search VINH4 Search VINH4
10 INDIUM PHOSPHIDE 77699 4% 6% 32 Search INDIUM+PHOSPHIDE Search INDIUM+PHOSPHIDE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 ZDANSKY, K , GORODYNSKYY, V , PEKAREK, L , (2009) DETECTORS OF GAMMA RAYS AND ALPHA PARTICLES BASED ON TA-DOPED INP CONVERTED TO THE SEMI-INSULATING STATE BY ANNEALING.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 56. ISSUE 5. P. 2997-3001 19 95% 0
2 JANARDHANAM, V , KUMAR, AA , REDDY, VR , REDDY, PN , (2010) INVESTIGATION ON DEEP LEVEL DEFECTS IN RAPID THERMAL ANNEALED UNDOPED N-TYPE INP.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 21. ISSUE 3. P. 285 -290 22 79% 3
3 ZHAO, YW , DONG, ZY , DENG, AH , (2006) ELECTRON IRRADIATION-INDUCED DEFECTS IN INP PRE-ANNEALED AT HIGH TEMPERATURE.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 9. ISSUE 1-3. P. 380 -383 20 95% 5
4 KEYES, BM , AHRENKIEL, RK , SHAW, GJ , SUMMERS, GP , (1997) MINORITY-CARRIER LIFETIME DAMAGE COEFFICIENT OF IRRADIATED INP.JOURNAL OF APPLIED PHYSICS. VOL. 82. ISSUE 5. P. 2156-2163 25 89% 3
5 KHAN, A , (2000) ROOM TEMPERATURE ANNEALING OF 5.48 MEV HE INDUCED DEFECT IN P(+)N AND N(+)P GROWN BY METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION.SOLID-STATE ELECTRONICS. VOL. 44. ISSUE 4. P. 639-648 20 100% 3
6 ZHAO, YW , DONG, ZY , (2007) GENERATION AND SUPPRESSION OF DEEP LEVEL DEFECTS IN INP.ACTA PHYSICA SINICA. VOL. 56. ISSUE 3. P. 1476-1479 19 83% 0
7 ZHAO, YW , DONG, ZY , (2008) ANNIHILATION OF DEEP LEVEL DEFECTS IN INP THROUGH HIGH TEMPERATURE ANNEALING.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS. VOL. 69. ISSUE 2-3. P. 551-554 15 100% 1
8 ZHAO, YW , DONG, ZY , MIAO, SS , DENG, AH , YANG, J , WANG, B , (2006) ORIGIN OF DEEP LEVEL DEFECT RELATED PHOTOLUMINESCENCE IN ANNEALED INP.JOURNAL OF APPLIED PHYSICS. VOL. 100. ISSUE 12. P. - 16 94% 6
9 DENG, AH , MASCHER, P , ZHAO, YW , LIN, LY , (2003) EFFECTS OF ANNEALING AMBIENT ON THE FORMATION OF COMPENSATION DEFECTS IN INP.JOURNAL OF APPLIED PHYSICS. VOL. 93. ISSUE 2. P. 930-932 19 83% 12
10 KAMINSKI, P , PAWLOWSKI, M , KOZLOWSKI, R , SURMA, B , DUBECKY, F , YAMADA, M , FUKUZAWA, M , (2004) INVESTIGATION OF COMPENSATION DEFECT CENTRES IN SEMI-INSULATING INP CRYSTALS.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. VOL. 27. ISSUE 1-3. P. 171-175 18 86% 4

Classes with closest relation at Level 1


Rank Class id link
1 22781 DEFECTS IN INP//FIR PC//HEAVILY DOPED N GAAS
2 23027 ACCEPTOR DIFFUSION//CHEM PHYS LUCAS HTS S//ZINC DIFFUSION
3 6921 MEV ION IMPLANTATION//COLD IMPLANTS//ELECTRON ANNEALING
4 11533 INFORMAT MAITRISE SCI PHYS//TECHNOL GUYANE//D5 IONS
5 10794 CONDUCTANCE TRANSIENTS//INDIUM PHOSPHIDE100//INSULATOR DAMAGE
6 1145 EL2//GAAS//SEMI INSULATING GAAS
7 12205 DISPLACEMENT DAMAGE//NONIONIZING ENERGY LOSS//DISPLACEMENT DAMAGE DOSE
8 31721 GLASS BEAD DESTRUCTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//STATE TORAT
9 14532 SELECTIVE AREA GROWTH//SELECTIVE EPITAXY//TERTIARYBUTYLCHLORIDE
10 26589 D LATTICE DYNAMICS//EDNR ELECTRICALLY DETECTED MAGNETIC RESONANCE//GAALNP

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