Class information for:
Level 1: CARBON DOPING//CBR4//INALAS ALLOYS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
11678 963 17.8 71%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
603 2             JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING 14085
11678 1                   CARBON DOPING//CBR4//INALAS ALLOYS 963

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 CARBON DOPING authKW 244742 4% 20% 39
2 CBR4 authKW 153450 1% 44% 11
3 INALAS ALLOYS authKW 95121 0% 100% 3
4 CARBON TETRABROMIDE authKW 89206 1% 26% 11
5 C DOPED GAAS authKW 71339 0% 75% 3
6 HETEROJUNCTION BIPOLAR TRANSISTORS authKW 70550 3% 7% 33
7 BE OUTDIFFUSION authKW 63414 0% 100% 2
8 CARBON DOPED GAAS authKW 63414 0% 100% 2
9 CBRCL3 authKW 63414 0% 100% 2
10 GAINAS C authKW 63414 0% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 11482 69% 0% 662
2 Crystallography 5080 20% 0% 192
3 Materials Science, Multidisciplinary 1338 28% 0% 270
4 Physics, Condensed Matter 1289 21% 0% 199
5 Engineering, Electrical & Electronic 1076 21% 0% 206
6 Nanoscience & Nanotechnology 287 7% 0% 65
7 Physics, Multidisciplinary 136 7% 0% 69
8 Materials Science, Coatings & Films 21 2% 0% 15
9 Materials Science, Characterization, Testing 14 1% 0% 6
10 Microscopy 7 0% 0% 4

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 UP EA 2654 CNRS 63414 0% 100% 2
2 UP EA 2654 63410 0% 50% 4
3 LEMI 54334 1% 14% 12
4 CNRSNXPP TOUCBN 2UMR 6508LAMIPS COMMUN 31707 0% 100% 1
5 COMPONENT ENGN 31707 0% 100% 1
6 ELECT MICROTECHOL RUMENTAT 31707 0% 100% 1
7 ESC SUP ING MECAN ELECT 31707 0% 100% 1
8 FIELD THEORY MICROWAVE ELECTIFH 31707 0% 100% 1
9 GEEPS SUPELEC 31707 0% 100% 1
10 GRP COMPOSANTS ELECT 31707 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF CRYSTAL GROWTH 34983 19% 1% 185
2 APPLIED PHYSICS LETTERS 5708 15% 0% 142
3 INSTITUTE OF PHYSICS CONFERENCE SERIES 5151 4% 0% 40
4 SEMICONDUCTORS 3649 3% 0% 28
5 JOURNAL OF APPLIED PHYSICS 2998 11% 0% 102
6 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 2656 3% 0% 25
7 JOURNAL OF ELECTRONIC MATERIALS 2167 3% 0% 26
8 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2152 4% 0% 34
9 MICROELECTRONICS RELIABILITY 1799 2% 0% 20
10 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 1484 2% 0% 24

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 CARBON DOPING 244742 4% 20% 39 Search CARBON+DOPING Search CARBON+DOPING
2 CBR4 153450 1% 44% 11 Search CBR4 Search CBR4
3 INALAS ALLOYS 95121 0% 100% 3 Search INALAS+ALLOYS Search INALAS+ALLOYS
4 CARBON TETRABROMIDE 89206 1% 26% 11 Search CARBON+TETRABROMIDE Search CARBON+TETRABROMIDE
5 C DOPED GAAS 71339 0% 75% 3 Search C+DOPED+GAAS Search C+DOPED+GAAS
6 HETEROJUNCTION BIPOLAR TRANSISTORS 70550 3% 7% 33 Search HETEROJUNCTION+BIPOLAR+TRANSISTORS Search HETEROJUNCTION+BIPOLAR+TRANSISTORS
7 BE OUTDIFFUSION 63414 0% 100% 2 Search BE+OUTDIFFUSION Search BE+OUTDIFFUSION
8 CARBON DOPED GAAS 63414 0% 100% 2 Search CARBON+DOPED+GAAS Search CARBON+DOPED+GAAS
9 CBRCL3 63414 0% 100% 2 Search CBRCL3 Search CBRCL3
10 GAINAS C 63414 0% 100% 2 Search GAINAS+C Search GAINAS+C

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 BHUNIA, S , UCHIDA, K , NOZAKI, S , SUGIYAMA, N , FURIYA, M , MORISAKI, H , (2003) METAL ORGANIC VAPOR PHASE EPITAXIAL GROWTH OF HEAVILY CARBON-DOPED GAAS USING A DOPANT SOURCE OF CCL3BR AND QUANTITATIVE ANALYSIS OF THE COMPENSATION MECHANISM IN THE EPILAYERS.JOURNAL OF APPLIED PHYSICS. VOL. 93. ISSUE 3. P. 1613 -1619 29 94% 1
2 NITTONO, T , WATANABE, N , ITO, H , SUGAHARA, H , NAGATA, K , NAKAJIMA, O , (1994) CARBON AND INDIUM CODOPING IN GAAS FOR RELIABLE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 33. ISSUE 11. P. 6129 -6135 34 97% 14
3 SEREDIN, PV , LENSHIN, AS , ARSENTYEV, IN , TARASOV, IS , PRUTSKIJ, T , LEISTE, H , RINKE, M , (2016) EPITAXIAL ALLOYS OF ALXGA1-XAS:MG WITH DIFFERENT TYPES OF CONDUCTIVITY.PHYSICA B-CONDENSED MATTER. VOL. 498. ISSUE . P. 65 -71 24 71% 0
4 ABERNATHY, CR , HOBSON, WS , (1996) CARBON-IMPURITY INCORPORATION DURING THE GROWTH OF EPITAXIAL GROUP ILL-V MATERIALS.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 7. ISSUE 1. P. 1 -21 55 53% 8
5 SEREDIN, PV , LENSHIN, AS , ARSENTIEV, IN , ZHABOTINSKII, AV , NIKOLAEV, DN , TARASOV, IS , SHAMAKHOV, VV , PRUTSKIJ, T , LEISTE, H , RINKE, M , (2017) EPITAXIAL AL (X) GA1-X AS:MG ALLOYS WITH DIFFERENT CONDUCTIVITY TYPES.SEMICONDUCTORS. VOL. 51. ISSUE 1. P. 122 -130 24 69% 0
6 MIMILA-ARROYO, J , BLAND, S , BARBE, M , (2002) CARBON REACTIVATION KINETICS IN GAAS: ITS DEPENDENCE ON DOPANT PRECURSOR, DOPING LEVEL, AND LAYER THICKNESS.JOURNAL OF APPLIED PHYSICS. VOL. 91. ISSUE 9. P. 5923-5928 28 85% 2
7 VAN DEELEN, J , BAUHUIS, GJ , SCHERMER, JJ , LARSEN, PK , (2004) PARAMETER STUDY OF INTRINSIC CARBON DOPING OF ALXGA1-XAS BY MOCVD.JOURNAL OF CRYSTAL GROWTH. VOL. 271. ISSUE 3-4. P. 376 -384 29 76% 6
8 SEREDIN, PV , LENSHIN, AS , GLOTOV, AV , ARSENTYEV, IN , VINOKUROV, DA , TARASOV, IS , PRUTSKIJ, T , LEISTE, H , RINKE, M , (2014) STRUCTURAL AND OPTICAL PROPERTIES OF HEAVILY DOPED ALXGA1-XAS1-YPY:MG ALLOYS PRODUCED BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION.SEMICONDUCTORS. VOL. 48. ISSUE 8. P. 1094 -1102 19 86% 2
9 VAN DEELEN, J , BAUHUIS, GJ , SCHERMER, JJ , LARSEN, PK , (2005) INFLUENCE OF GROWTH PARAMETERS ON THE COMPOSITION AND IMPURITY LEVELS OF INTRINSICALLY CARBON DOPED ALXGA1-XAS.JOURNAL OF CRYSTAL GROWTH. VOL. 284. ISSUE 1-2. P. 28-38 27 73% 4
10 SUN, ZZ , YOON, SF , TAN, KH , ZHANG, R , JIANG, J , (2004) INCORPORATION EFFICIENCY OF CARBON IN GAAS USING CARBON TETRABROMIDE IN SOLID SOURCE MOLECULAR BEAM EPITAXY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 22. ISSUE 3. P. 1017-1021 21 88% 1

Classes with closest relation at Level 1


Rank Class id link
1 1985 HETEROJUNCTION BIPOLAR TRANSISTORS//HBT//HETEROJUNCTION BIPOLAR TRANSISTOR HBT
2 1618 JOURNAL OF CRYSTAL GROWTH//TRIMETHYLINDIUM//MOMBE
3 23027 ACCEPTOR DIFFUSION//CHEM PHYS LUCAS HTS S//ZINC DIFFUSION
4 6921 MEV ION IMPLANTATION//COLD IMPLANTS//ELECTRON ANNEALING
5 7233 QUANTUM WELL INTERMIXING//QUANTUM WELL INTERDIFFUSION//IMPURITY FREE VACANCY DISORDERING
6 14797 GA AS BI SOLUTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//ABZU
7 11353 DELTA DOPING//MULTISUBBAND ELECTRON MOBILITY//DELTA DOPED QUANTUM WELLS
8 5113 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN ATOM TREATMENT
9 28684 TRANSISTOR LASER//TRANSISTOR LASER TL//0 D QUANTUM WELLS
10 10313 LATERAL P N JUNCTION//411A GAAS SUBSTRATES//SUPER FLAT INTERFACES

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