Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 14797 | 750 | 17.3 | 43% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
| 603 | 2 | JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING | 14085 |
| 14797 | 1 | GA AS BI SOLUTION//SOVIET PHYSICS SEMICONDUCTORS-USSR//ABZU | 750 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | GA AS BI SOLUTION | authKW | 81425 | 0% | 100% | 2 |
| 2 | SOVIET PHYSICS SEMICONDUCTORS-USSR | journal | 51501 | 11% | 2% | 84 |
| 3 | ABZU | authKW | 40712 | 0% | 100% | 1 |
| 4 | ACCEPTOR ACCEPTOR PAIR EMISSIONS | authKW | 40712 | 0% | 100% | 1 |
| 5 | ALGAAS GROWTH | authKW | 40712 | 0% | 100% | 1 |
| 6 | BARBAR TEMPLE | authKW | 40712 | 0% | 100% | 1 |
| 7 | ELECT MAT COMPONENTS S | address | 40712 | 0% | 100% | 1 |
| 8 | ELECTRIC FIELD INDUCED DEFECT | authKW | 40712 | 0% | 100% | 1 |
| 9 | FIRPC | authKW | 40712 | 0% | 100% | 1 |
| 10 | GA BI SOLUTION | authKW | 40712 | 0% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 3959 | 47% | 0% | 352 |
| 2 | Physics, Condensed Matter | 3195 | 35% | 0% | 262 |
| 3 | Crystallography | 549 | 8% | 0% | 59 |
| 4 | Materials Science, Multidisciplinary | 293 | 17% | 0% | 126 |
| 5 | Physics, Multidisciplinary | 228 | 10% | 0% | 72 |
| 6 | Materials Science, Coatings & Films | 119 | 3% | 0% | 25 |
| 7 | Engineering, Electrical & Electronic | 103 | 9% | 0% | 71 |
| 8 | Optics | 40 | 5% | 0% | 34 |
| 9 | Nanoscience & Nanotechnology | 28 | 3% | 0% | 23 |
| 10 | Instruments & Instrumentation | 17 | 2% | 0% | 18 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | ELECT MAT COMPONENTS S | 40712 | 0% | 100% | 1 |
| 2 | J AN KAGAMI MEM MAT SCI TECHNOL | 40712 | 0% | 100% | 1 |
| 3 | MUP COMP | 40712 | 0% | 100% | 1 |
| 4 | SONDER FOR BEREICH 56 BASIS | 40712 | 0% | 100% | 1 |
| 5 | TRANSMISS DEVICE S | 40712 | 0% | 100% | 1 |
| 6 | WRIGHT ELR SOLID STATE ELE DIRECTORATE | 40712 | 0% | 100% | 1 |
| 7 | COMMUN SYST INFORMAT | 20355 | 0% | 50% | 1 |
| 8 | ELR SOLID STATE ELE DIRECTORATE | 20355 | 0% | 50% | 1 |
| 9 | NORTEL ADV COMPONENTS | 20355 | 0% | 50% | 1 |
| 10 | RADIO PHYS ELE | 20355 | 0% | 50% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 51501 | 11% | 2% | 84 |
| 2 | JOURNAL OF CRYSTAL GROWTH | 3483 | 7% | 0% | 52 |
| 3 | JOURNAL OF APPLIED PHYSICS | 2751 | 11% | 0% | 86 |
| 4 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 2574 | 3% | 0% | 25 |
| 5 | APPLIED PHYSICS LETTERS | 2343 | 11% | 0% | 81 |
| 6 | SEMICONDUCTORS | 1719 | 2% | 0% | 17 |
| 7 | INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1649 | 2% | 0% | 12 |
| 8 | SOLID STATE COMMUNICATIONS | 1205 | 4% | 0% | 28 |
| 9 | PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1147 | 2% | 0% | 12 |
| 10 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1126 | 2% | 0% | 15 |
Author Key Words |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | GA AS BI SOLUTION | 81425 | 0% | 100% | 2 | Search GA+AS+BI+SOLUTION | Search GA+AS+BI+SOLUTION |
| 2 | ABZU | 40712 | 0% | 100% | 1 | Search ABZU | Search ABZU |
| 3 | ACCEPTOR ACCEPTOR PAIR EMISSIONS | 40712 | 0% | 100% | 1 | Search ACCEPTOR+ACCEPTOR+PAIR+EMISSIONS | Search ACCEPTOR+ACCEPTOR+PAIR+EMISSIONS |
| 4 | ALGAAS GROWTH | 40712 | 0% | 100% | 1 | Search ALGAAS+GROWTH | Search ALGAAS+GROWTH |
| 5 | BARBAR TEMPLE | 40712 | 0% | 100% | 1 | Search BARBAR+TEMPLE | Search BARBAR+TEMPLE |
| 6 | ELECTRIC FIELD INDUCED DEFECT | 40712 | 0% | 100% | 1 | Search ELECTRIC+FIELD+INDUCED+DEFECT | Search ELECTRIC+FIELD+INDUCED+DEFECT |
| 7 | FIRPC | 40712 | 0% | 100% | 1 | Search FIRPC | Search FIRPC |
| 8 | GA BI SOLUTION | 40712 | 0% | 100% | 1 | Search GA+BI+SOLUTION | Search GA+BI+SOLUTION |
| 9 | GA097MN003AS | 40712 | 0% | 100% | 1 | Search GA097MN003AS | Search GA097MN003AS |
| 10 | GAAL ALGAAS | 40712 | 0% | 100% | 1 | Search GAAL+ALGAAS | Search GAAL+ALGAAS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | MAKITA, Y , (1996) NOVEL FEATURES OF PHOTOLUMINESCENCE SPECTRA FROM ACCEPTOR-DOPED GAAS: FORMATION OF ACCEPTOR-ACCEPTOR PAIR EMISSIONS AND OPTICAL COMPENSATION EFFECT.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 16. ISSUE 6-8. P. 265-398 | 63 | 43% | 8 |
| 2 | CHARBONNEAU, S , THEWALT, MLW , (1990) OPTICAL-PROPERTIES OF SHALLOW DEFECT-RELATED ACCEPTORS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY.PHYSICAL REVIEW B. VOL. 41. ISSUE 12. P. 8221-8228 | 23 | 100% | 9 |
| 3 | SKROMME, BJ , BOSE, SS , LOW, TS , LEPKOWSKI, TR , DEJULE, RY , STILLMAN, GE , HWANG, JCM , (1985) CHARACTERIZATION OF HIGH-PURITY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS.JOURNAL OF APPLIED PHYSICS. VOL. 58. ISSUE 12. P. 4685-4702 | 32 | 82% | 66 |
| 4 | SZAFRANEK, I , PLANO, MA , MCCOLLUM, MJ , STOCKMAN, SA , JACKSON, SL , CHENG, KY , STILLMAN, GE , (1990) GROWTH-INDUCED SHALLOW ACCEPTOR DEFECT AND RELATED LUMINESCENCE EFFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS.JOURNAL OF APPLIED PHYSICS. VOL. 68. ISSUE 2. P. 741-754 | 19 | 86% | 8 |
| 5 | ZEMON, S , LAMBERT, G , (1991) PHOTOLUMINESCENCE SPECTRA IN AN APPLIED MAGNETIC-FIELD FOR EXCITONS BOUND TO IONIZED DONORS IN HIGH-PURITY, EPITAXIAL GAAS.JOURNAL OF APPLIED PHYSICS. VOL. 70. ISSUE 9. P. 4909-4918 | 15 | 94% | 3 |
| 6 | NICKOLAENKO, AE , GILINSKY, AM , ZHURAVLEV, KS , SHEGAI, OA , SHAMIRZAEV, TS , BAKAROV, AK , ZHILYAEV, YV , FEDOROV, LM , (2006) PROLONGED DECAY OF FREE-TO-BOUND PHOTOLUMINESCENCE IN DIRECT BAND GAP INGAAS AND ALGAAS ALLOYS: MAGNETIC RESONANCE STUDIES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 21. ISSUE 2. P. 105-111 | 12 | 67% | 0 |
| 7 | CHARBONNEAU, S , STEINER, T , THEWALT, MLW , (1990) PHOTOLUMINESCENCE DECAY TIMES OF THE DEFECT-INDUCED BOUND-EXCITON LINES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY.PHYSICAL REVIEW B. VOL. 41. ISSUE 5. P. 2861-2864 | 13 | 100% | 6 |
| 8 | JEGANATHAN, K , SARAVANAN, S , BASKAR, K , KUMAR, J , (1998) ON THE BISMUTH COMPOSITION DEPENDENT CONCENTRATION OF ARSENIC ATOMS DURING LPE GROWTH OF GAAS LAYERS FROM GA-AS-BI SOLUTION.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 165. ISSUE 2. P. 437 -443 | 11 | 85% | 3 |
| 9 | WATKINS, SP , HAACKE, G , (1991) SOURCES OF DONOR IMPURITIES IN UNDOPED GAAS GROWN USING ARSINE AND TRIMETHYLGALLIUM.JOURNAL OF APPLIED PHYSICS. VOL. 69. ISSUE 3. P. 1625 -1630 | 14 | 88% | 5 |
| 10 | QURASHI, US , IQBAL, MZ , ANDERSSON, TG , (1996) PHOTOLUMINESCENCE STUDY OF AL DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY.JOURNAL OF APPLIED PHYSICS. VOL. 80. ISSUE 10. P. 5932-5940 | 15 | 65% | 3 |
Classes with closest relation at Level 1 |