Class information for:
Level 2: GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
1210 9166 24.0 66%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
1210 2             GALLIUM ARSENIDE//GAAS//REFLECTANCE ANISOTROPY SPECTROSCOPY 9166
2100 1                   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY//WEBSTER//JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2357
4033 1                   REFLECTANCE ANISOTROPY SPECTROSCOPY//REFLECTANCE DIFFERENCE SPECTROSCOPY//REFLECTION ANISOTROPY SPECTROSCOPY 1860
6482 1                   III V MOSFET//GAAS MOSFET//INGAAS 1478
8029 1                   SULFUR PASSIVATION//INTERFACE CONTROL LAYER//NH42S X TREATMENT 1301
10794 1                   CONDUCTANCE TRANSIENTS//INDIUM PHOSPHIDE100//INSULATOR DAMAGE 1034
13299 1                   ECR HYDROGEN PLASMA//ELECTROMAGNETIC GREENS FUNCTION//IN SITU VACUUM PROCESS 847
31535 1                   FIELD INDUCED JUNCTION//INSB GATE CONTROLLED DIODE//PIXEL LINEARITY 151
32503 1                   CARBON DIOXIDE SHG//FT IR PL SPECTROSCOPY//INTERACTION WITH SUBSTRATE 138

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 GALLIUM ARSENIDE authKW 143727 3% 14% 317
2 GAAS authKW 94558 3% 10% 293
3 REFLECTANCE ANISOTROPY SPECTROSCOPY authKW 74692 0% 61% 37
4 INGAAS authKW 72012 1% 16% 137
5 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B journal 70706 7% 4% 597
6 INDIUM ARSENIDE authKW 69773 1% 28% 75
7 SULFUR PASSIVATION authKW 68164 0% 64% 32
8 PHYSICS, APPLIED WoSSC 62289 53% 0% 4837
9 SURFACE SCIENCE journal 62055 8% 3% 713
10 INDIUM PHOSPHIDE authKW 58067 1% 18% 96

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 62289 53% 0% 4837
2 Physics, Condensed Matter 44421 37% 0% 3400
3 Materials Science, Coatings & Films 26353 13% 1% 1150
4 Nanoscience & Nanotechnology 6175 10% 0% 880
5 Engineering, Electrical & Electronic 5673 17% 0% 1530
6 Chemistry, Physical 3730 16% 0% 1479
7 Materials Science, Multidisciplinary 2701 15% 0% 1387
8 Crystallography 1073 4% 0% 327
9 Physics, Multidisciplinary 1038 7% 0% 606
10 Electrochemistry 224 2% 0% 182

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SUR E STUDY 20391 0% 88% 7
2 INTER E QUANTUM ELECT 16878 0% 20% 25
3 FESTKORPERTHEORIE THEORET OPT 15912 0% 14% 34
4 WEBSTER 12463 0% 25% 15
5 CSEA 12060 0% 24% 15
6 SEMICOND SUR E PHYS 11888 0% 71% 5
7 FESTKORPERPHYS THEORET OPT 9988 0% 100% 3
8 FG OBERFLACHENFOR 9988 0% 100% 3
9 INVEST COMUNICAC OPT 9560 0% 14% 21
10 QUANTUM SEMICOND PHOTON BASED BIONANOTECHNO 8148 0% 35% 7

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 70706 7% 4% 597
2 SURFACE SCIENCE 62055 8% 3% 713
3 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 36432 1% 10% 114
4 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 27202 4% 2% 343
5 APPLIED PHYSICS LETTERS 20419 9% 1% 841
6 PHYSICAL REVIEW B 18583 11% 1% 992
7 APPLIED SURFACE SCIENCE 16236 5% 1% 421
8 JOURNAL OF CRYSTAL GROWTH 9495 3% 1% 305
9 JOURNAL OF APPLIED PHYSICS 7198 5% 0% 503
10 IEEE ELECTRON DEVICE LETTERS 6410 1% 1% 134

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 GALLIUM ARSENIDE 143727 3% 14% 317 Search GALLIUM+ARSENIDE Search GALLIUM+ARSENIDE
2 GAAS 94558 3% 10% 293 Search GAAS Search GAAS
3 REFLECTANCE ANISOTROPY SPECTROSCOPY 74692 0% 61% 37 Search REFLECTANCE+ANISOTROPY+SPECTROSCOPY Search REFLECTANCE+ANISOTROPY+SPECTROSCOPY
4 INGAAS 72012 1% 16% 137 Search INGAAS Search INGAAS
5 INDIUM ARSENIDE 69773 1% 28% 75 Search INDIUM+ARSENIDE Search INDIUM+ARSENIDE
6 SULFUR PASSIVATION 68164 0% 64% 32 Search SULFUR+PASSIVATION Search SULFUR+PASSIVATION
7 INDIUM PHOSPHIDE 58067 1% 18% 96 Search INDIUM+PHOSPHIDE Search INDIUM+PHOSPHIDE
8 REFLECTANCE DIFFERENCE SPECTROSCOPY 54878 0% 57% 29 Search REFLECTANCE+DIFFERENCE+SPECTROSCOPY Search REFLECTANCE+DIFFERENCE+SPECTROSCOPY
9 III V MOSFET 48817 0% 67% 22 Search III+V+MOSFET Search III+V+MOSFET
10 GAAS MOSFET 47348 0% 89% 16 Search GAAS+MOSFET Search GAAS+MOSFET

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 HINKLE, CL , VOGEL, EM , YE, PD , WALLACE, RM , (2011) INTERFACIAL CHEMISTRY OF OXIDES ON INXGA(1-X)AS AND IMPLICATIONS FOR MOSFET APPLICATIONS.CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE. VOL. 15. ISSUE 5. P. 188-207 134 86% 68
2 COLE, RJ , FARRELL, T , WEIGHTMAN, P , MARTIN, DS , (2005) REFLECTION ANISOTROPY SPECTROSCOPY.REPORTS ON PROGRESS IN PHYSICS. VOL. 68. ISSUE 6. P. 1251 -1341 177 59% 215
3 BESSOLOV, VN , LEBEDEV, MV , (1998) CHALCOGENIDE PASSIVATION OF III-V SEMICONDUCTOR SURFACES.SEMICONDUCTORS. VOL. 32. ISSUE 11. P. 1141 -1156 158 92% 90
4 OHTAKE, A , (2008) SURFACE RECONSTRUCTIONS ON GAAS(001).SURFACE SCIENCE REPORTS. VOL. 63. ISSUE 7. P. 295-327 109 86% 63
5 SCHMIDT, WG , BECHSTEDT, F , SRIVASTAVA, GP , (1996) ADSORPTION OF GROUP-V ELEMENTS ON III-V(110) SURFACES.SURFACE SCIENCE REPORTS. VOL. 25. ISSUE 5-7. P. 141 -223 166 85% 55
6 ROBERTSON, J , GUO, Y , LIN, L , (2015) DEFECT STATE PASSIVATION AT III-V OXIDE INTERFACES FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES.JOURNAL OF APPLIED PHYSICS. VOL. 117. ISSUE 11. P. - 69 95% 14
7 GOUGOUSI, T , (2016) ATOMIC LAYER DEPOSITION OF HIGH-K DIELECTRICS ON III-V SEMICONDUCTOR SURFACES.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 62. ISSUE 4. P. 1 -21 123 63% 0
8 SCHMIDT, WG , (2002) III-V COMPOUND SEMICONDUCTOR (001) SURFACES.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 75. ISSUE 1. P. 89 -99 91 88% 84
9 LABELLA, VP , KRAUSE, MR , DING, Z , THIBADO, PM , (2005) ARSENIC-RICH GAAS(001) SURFACE STRUCTURE.SURFACE SCIENCE REPORTS. VOL. 60. ISSUE 1-4. P. 1 -53 102 76% 42
10 MANCHENO-POSSO, P , MUSCAT, AJ , (2017) SELF-ASSEMBLY OF ALKANETHIOLATES DIRECTS SULFUR BONDING WITH GAAS(100).APPLIED SURFACE SCIENCE. VOL. 397. ISSUE . P. 1 -12 67 80% 0

Classes with closest relation at Level 2


Rank Class id link
1 899 SURFACE SCIENCE//SILICON//SCANNING TUNNELING MICROSCOPY
2 3874 AC SURFACE PHOTOVOLTAGE//TECH M PUPIN//SCANNING PHOTON MICROSCOPE
3 247 GAINNAS//JOURNAL OF CRYSTAL GROWTH//DILUTE NITRIDES
4 603 JOURNAL OF CRYSTAL GROWTH//PHYSICS, APPLIED//QUANTUM WELL INTERMIXING
5 3422 CAF2//EPITAXIAL AL2O3//METAL INSULATOR HETEROSTRUCTURE
6 579 IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC
7 3285 ELECT ENGN OPTOELECT TECHNOL//GAAS PHOTOCATHODE//EUTECTIC CERAMICS
8 664 ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS
9 746 BETA FESI2//SILICIDES//SERIES RESISTANCE
10 4090 MAGNET SENSOR//SOVIET PHYSICS SEMICONDUCTORS-USSR//RADIATION RESISTANT HALL SENSORS

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