Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
3783 | 978 | 15.5 | 38% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
3783 | 2 | LIQUID PHASE EPITAXY//MICROCHANNEL EPITAXY//ELECTROEPITAXY | 978 |
14673 | 1 | MICROCHANNEL EPITAXY//ELECTROEPITAXY//LIQUID PHASE ELECTROEPITAXY | 756 |
34087 | 1 | ALXGA1 XP//VAPOR PRESSURE CONTROL//SURFACE AND INTERFACE PHENOMENA | 116 |
34783 | 1 | PHASE BOUNDARY REGION//QUANTUM WELL LASER STRUCTURES//INVEST DISPOSITIVOS SEMICONDUCTO | 106 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | LIQUID PHASE EPITAXY | authKW | 316947 | 8% | 13% | 81 |
2 | MICROCHANNEL EPITAXY | authKW | 299714 | 1% | 80% | 12 |
3 | ELECTROEPITAXY | authKW | 280987 | 1% | 100% | 9 |
4 | LIQUID PHASE ELECTROEPITAXY | authKW | 252886 | 1% | 90% | 9 |
5 | EPITAXIAL LATERAL OVERGROWTH | authKW | 145182 | 2% | 23% | 20 |
6 | INGAAS BRIDGE LAYER | authKW | 124883 | 0% | 100% | 4 |
7 | COMPOSITIONAL CONVERSION | authKW | 93662 | 0% | 100% | 3 |
8 | INTERFACE SUPERSATURATION | authKW | 70245 | 0% | 75% | 3 |
9 | ALXGA1 XP | authKW | 62441 | 0% | 100% | 2 |
10 | LATTICE MISMATCHED EPITAXIAL STRUCTURES | authKW | 62441 | 0% | 100% | 2 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Crystallography | 13929 | 32% | 0% | 316 |
2 | Physics, Applied | 8497 | 59% | 0% | 579 |
3 | Materials Science, Multidisciplinary | 2832 | 39% | 0% | 378 |
4 | Physics, Condensed Matter | 372 | 12% | 0% | 119 |
5 | Materials Science, Coatings & Films | 183 | 4% | 0% | 35 |
6 | Engineering, Electrical & Electronic | 100 | 9% | 0% | 84 |
7 | Physics, Multidisciplinary | 73 | 6% | 0% | 56 |
8 | Materials Science, Characterization, Testing | 37 | 1% | 0% | 9 |
9 | Electrochemistry | 19 | 2% | 0% | 18 |
10 | Optics | 17 | 3% | 0% | 32 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ADV MAT RELATED TECHNOL | 52028 | 1% | 33% | 5 |
2 | TELECOMMUN ADVANCEMENTS ORG | 41626 | 0% | 67% | 2 |
3 | SENDAI | 37729 | 1% | 13% | 9 |
4 | CENTURY PROGRAM NANO TORY 21ST | 31221 | 0% | 100% | 1 |
5 | CME GHI | 31221 | 0% | 100% | 1 |
6 | COMP SIMULAT TECHNOL | 31221 | 0% | 100% | 1 |
7 | LASHKAR SEMICOND PHYS | 31221 | 0% | 100% | 1 |
8 | R HUT | 31221 | 0% | 100% | 1 |
9 | REL TECH MECH ENGN | 31221 | 0% | 100% | 1 |
10 | VOLGODONSK BRANCH | 31221 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 50134 | 23% | 1% | 223 |
2 | PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 20853 | 6% | 1% | 58 |
3 | ZHURNAL TEKHNICHESKOI FIZIKI | 13844 | 5% | 1% | 52 |
4 | CRYSTAL RESEARCH AND TECHNOLOGY | 11957 | 5% | 1% | 50 |
5 | ELECTRONICSWEEK | 10030 | 0% | 11% | 3 |
6 | INORGANIC MATERIALS | 6138 | 4% | 0% | 43 |
7 | KRISTALLOGRAFIYA | 3887 | 2% | 1% | 22 |
8 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 2674 | 2% | 0% | 22 |
9 | KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 2567 | 0% | 2% | 4 |
10 | JOURNAL OF ELECTRONIC MATERIALS | 1970 | 3% | 0% | 25 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GOLUBEV, LV , EGOROV, AV , NOVIKOV, SV , SHMARTSEV, YV , (1995) LIQUID-PHASE ELECTROEPITAXY OF III-V SEMICONDUCTORS.JOURNAL OF CRYSTAL GROWTH. VOL. 146. ISSUE 1-4. P. 277-282 | 48 | 87% | 10 |
2 | DOST, S , SHEIBANI, H , (2011) LIQUID PHASE ELECTROEPITAXY OF SEMICONDUCTORS UNDER STATIC MAGNETIC FIELD.CRYSTENGCOMM. VOL. 13. ISSUE 19. P. 5619-5633 | 36 | 68% | 0 |
3 | TOMITA, M , MIZUNO, Y , TAKAKURA, H , KAMBAYASHI, D , NARITSUKA, S , MARUYAMA, T , (2016) EXPERIMENTAL DETERMINATION OF DEPENDENCE OF VERTICAL GROWTH RATE ON SURFACE SUPERSATURATION IN GAAS(001) MICROCHANNEL EPITAXY AND GROWTH OPTIMIZATION.JOURNAL OF CRYSTAL GROWTH. VOL. 440. ISSUE . P. 13 -16 | 21 | 84% | 0 |
4 | TOMITA, M , TAKAKURA, H , KAMBAYASHI, D , MIZUNO, Y , NARITSUKA, S , MARUYAMA, T , (2015) ABNORMAL GROWTH IN SUPER-LOW SUPERSATURATION MICROCHANNEL EPITAXY OF (001) GAAS AND ITS IMPROVEMENT.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 2. P. - | 21 | 84% | 1 |
5 | MIZUNO, Y , TOMITA, M , TAKAKURA, H , IWAKAWA, M , KAMBAYASHI, D , MARUYAMA, T , NARITSUKA, S , (2016) EXPERIMENTAL STUDY OF GROWTH MECHANISM OF GAAS MICROCHANNEL EPITAXY - STUDY OF PINNING EFFECT OF SI-DOPING.JOURNAL OF CRYSTAL GROWTH. VOL. 452. ISSUE . P. 240 -243 | 22 | 79% | 0 |
6 | DOST, S , QIN, Z , (1998) A NUMERICAL SIMULATION MODEL FOR LIQUID PHASE ELECTROEPITAXIAL GROWTH OF GAINAS.JOURNAL OF CRYSTAL GROWTH. VOL. 187. ISSUE 1. P. 51-64 | 25 | 96% | 5 |
7 | DEIVASIGAMANI, M , KOYAMA, T , HAYAKAWA, Y , (2009) EFFECT OF AN APPLIED ELECTRIC CURRENT IN EPITAXIAL GROWTH OF GAAS LAYER ON PATTERNED GAAS SUBSTRATE.JOURNAL OF CRYSTAL GROWTH. VOL. 311. ISSUE 12. P. 3314-3318 | 22 | 79% | 0 |
8 | MOULEESWARAN, D , DHANASEKARAN, R , (2006) LIQUID PHASE ELECTRO EPITAXY GROWTH KINETICS OF GAAS - A THREE-DIMENSIONAL NUMERICAL SIMULATION.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 130. ISSUE 1-3. P. 137-145 | 17 | 100% | 2 |
9 | NISHINAGA, T , (2002) MICROCHANNEL EPITAXY: AN OVERVIEW.JOURNAL OF CRYSTAL GROWTH. VOL. 237. ISSUE . P. 1410-1417 | 21 | 81% | 42 |
10 | ZYTKIEWICZ, ZR , DOBOSZ, D , LIU, YC , DOST, S , (2005) RECENT PROGRESS IN LATERAL OVERGROWTH OF SEMICONDUCTOR STRUCTURES FROM THE LIQUID PHASE.CRYSTAL RESEARCH AND TECHNOLOGY. VOL. 40. ISSUE 4-5. P. 321-328 | 19 | 86% | 4 |
Classes with closest relation at Level 2 |