Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 30345 | 170 | 11.7 | 44% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
| 532 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET | 14860 |
| 30345 | 1 | HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL | 170 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT | authKW | 574784 | 2% | 80% | 4 |
| 2 | LATERAL BIPOLAR TRANSISTOR | authKW | 561310 | 3% | 63% | 5 |
| 3 | ABT BAUELEMENTETECHNOL | address | 359241 | 1% | 100% | 2 |
| 4 | BETA MOSFET | authKW | 359241 | 1% | 100% | 2 |
| 5 | FULLY DEPLETED COLLECTOR | authKW | 359241 | 1% | 100% | 2 |
| 6 | HIGH VOLTAGE BIPOLAR TRANSISTORS | authKW | 359241 | 1% | 100% | 2 |
| 7 | MULTIPLE STEP IMPLANTATION | authKW | 359241 | 1% | 100% | 2 |
| 8 | SOI LATERAL BIPOLAR | authKW | 359241 | 1% | 100% | 2 |
| 9 | SYMMETRIC JUNCTION | authKW | 359241 | 1% | 100% | 2 |
| 10 | DYNAMIC THRESHOLD MOSFET DTMOS | authKW | 323315 | 2% | 60% | 3 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Engineering, Electrical & Electronic | 4144 | 89% | 0% | 151 |
| 2 | Physics, Applied | 927 | 48% | 0% | 81 |
| 3 | Physics, Condensed Matter | 59 | 12% | 0% | 20 |
| 4 | Computer Science, Hardware & Architecture | 23 | 2% | 0% | 4 |
| 5 | Nanoscience & Nanotechnology | 21 | 5% | 0% | 8 |
| 6 | Telecommunications | 13 | 3% | 0% | 5 |
| 7 | Computer Science, Information Systems | 8 | 2% | 0% | 4 |
| 8 | Engineering, Aerospace | 7 | 1% | 0% | 2 |
| 9 | Optics | 4 | 4% | 0% | 6 |
| 10 | Physics, Multidisciplinary | 1 | 3% | 0% | 5 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | ABT BAUELEMENTETECHNOL | 359241 | 1% | 100% | 2 |
| 2 | PROC DEVICE ANAL ENGN DEV | 179621 | 1% | 100% | 1 |
| 3 | PROGRAM ELECT SYST INFORMAT ENGN | 179621 | 1% | 100% | 1 |
| 4 | DESIGN SYST TECHNOL | 89809 | 1% | 50% | 1 |
| 5 | SCG CZECH DESIGN | 89809 | 1% | 50% | 1 |
| 6 | ADV DESIGN FRAMEWORK DEV | 44904 | 1% | 25% | 1 |
| 7 | EMBEDDED MEMORY | 44904 | 1% | 25% | 1 |
| 8 | ELECT MICROELECT COMP INTELLIGENT SYST | 41445 | 2% | 8% | 3 |
| 9 | DEVICE PHYS GRP | 16327 | 1% | 9% | 1 |
| 10 | ELECT ENGN COMP | 11006 | 5% | 1% | 8 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 25104 | 27% | 0% | 46 |
| 2 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 24800 | 3% | 3% | 5 |
| 3 | IEEE ELECTRON DEVICE LETTERS | 11498 | 14% | 0% | 24 |
| 4 | SOLID-STATE ELECTRONICS | 4660 | 9% | 0% | 16 |
| 5 | ISSCC DIGEST OF TECHNICAL PAPERS | 4080 | 1% | 2% | 1 |
| 6 | IEEE JOURNAL OF SOLID-STATE CIRCUITS | 3127 | 7% | 0% | 12 |
| 7 | IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1770 | 2% | 0% | 3 |
| 8 | IEICE TRANSACTIONS ON COMMUNICATIONS ELECTRONICS INFORMATION AND SYSTEMS | 734 | 1% | 0% | 1 |
| 9 | MICROELECTRONIC ENGINEERING | 629 | 4% | 0% | 6 |
| 10 | ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 563 | 1% | 0% | 2 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | YAU, JB , CAI, J , NING, TH , (2016) SUBSTRATE-VOLTAGE MODULATION OF CURRENTS IN SYMMETRIC SOI LATERAL BIPOLAR TRANSISTORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 5. P. 1835 -1839 | 7 | 100% | 0 |
| 2 | CAI, J , NING, TH , D'EMIC, CP , YAU, JB , CHAN, KK , YOON, J , MURALIDHAR, R , PARK, DG , (2014) ON THE DEVICE DESIGN AND DRIVE-CURRENT CAPABILITY OF SOI LATERAL BIPOLAR TRANSISTORS.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. VOL. 2. ISSUE 5. P. 105 -113 | 6 | 86% | 3 |
| 3 | HUANG, R , HAN, RQ , WANG, YY , KO, PK , (2001) MODELLING FOR THE CURRENT-VOLTAGE CHARACTERISTICS OF SOI SUBMICROMETRE GATE CONTROLLED HYBRID TRANSISTORS.INTERNATIONAL JOURNAL OF ELECTRONICS. VOL. 88. ISSUE 3. P. 287 -300 | 9 | 75% | 0 |
| 4 | CHAO, TS , LEE, YJ , HUANG, CY , LIN, HC , LI, YM , HUANG, TY , (2004) HOT CARRIER DEGRADATIONS OF DYNAMIC THRESHOLD SILICON ON INSULATOR P-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 43. ISSUE 4A. P. 1300-1304 | 7 | 88% | 0 |
| 5 | KORICIC, M , ZILAK, J , SULIGOJ, T , (2015) DOUBLE-EMITTER REDUCED-SURFACE-FIELD HORIZONTAL CURRENT BIPOLAR TRANSISTOR WITH 36 V BREAKDOWN INTEGRATED IN BICMOS AT ZERO COST.IEEE ELECTRON DEVICE LETTERS. VOL. 36. ISSUE 2. P. 90 -92 | 4 | 100% | 3 |
| 6 | HWANG, SM , JUNG, YJ , KWON, HM , JANG, JH , KWAK, HY , KWON, SK , SUNG, SY , SHIN, JK , CHUNG, YS , LEE, DS , ET AL (2013) NOVEL PNP BJT STRUCTURE TO IMPROVE MATCHING CHARACTERISTICS FOR ANALOG AND MIXED SIGNAL INTEGRATED CIRCUIT APPLICATIONS.IEICE TRANSACTIONS ON ELECTRONICS. VOL. E96C. ISSUE 5. P. 663 -668 | 5 | 83% | 0 |
| 7 | HUANG, R , WANG, YY , (1999) COMPREHENSIVE ANALYSIS OF THE SHORT CHANNEL EFFECT IN THE SOI GATE CONTROLLED HYBRID TRANSISTOR (GCHT).INTERNATIONAL JOURNAL OF ELECTRONICS. VOL. 86. ISSUE 6. P. 685 -698 | 7 | 88% | 0 |
| 8 | GOMEZ, R , BASHIR, R , NEUDECK, GW , (2000) ON THE DESIGN AND FABRICATION OF NOVEL LATERAL BIPOLAR TRANSISTOR IN A DEEP-SUBMICRON TECHNOLOGY.MICROELECTRONICS JOURNAL. VOL. 31. ISSUE 3. P. 199-205 | 9 | 64% | 6 |
| 9 | LEE, YJ , CHAO, TS , HUANG, TY , (2005) HIGH VOLTAGE APPLICATIONS AND NBTI EFFECTS OF DT-PMOSFETS WITH REVERSE SCHOTTKY SUBSTRATE CONTACTS.MICROELECTRONICS RELIABILITY. VOL. 45. ISSUE 7-8. P. 1119 -1123 | 5 | 100% | 0 |
| 10 | CHEN, SM , FANG, YK , JUANG, FR , CHEN, CC , LIU, S , KUO, CW , CHAO, CP , TSENG, HC , (2011) A LOW-FLICKER NOISE GATE-CONTROLLED LATERAL-VERTICAL BIPOLAR JUNCTION TRANSISTOR ARRAY WITH 55-NM CMOS TECHNOLOGY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 58. ISSUE 10. P. 3276 -3282 | 6 | 67% | 0 |
Classes with closest relation at Level 1 |