Class information for:
Level 1: 1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
24736 303 16.9 54%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
24736 1                   1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS 303

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 1T DRAM authKW 2579861 11% 80% 32
2 CAPACITORLESS DRAM authKW 1951024 7% 88% 22
3 CAPACITORLESS authKW 1133726 5% 75% 15
4 PSEUDO MOSFET authKW 955496 5% 59% 16
5 CAPACITORLESS 1T DRAM authKW 937991 4% 85% 11
6 FLOATING BODY CELL authKW 705434 2% 100% 7
7 FLOATING BODY CELL FBC authKW 604658 2% 100% 6
8 UNIFIED RAM URAM authKW 548668 2% 78% 7
9 PSEUDO MOSFET PSI MOSFET authKW 503882 2% 100% 5
10 FIELD EFFECT DIODE authKW 453490 2% 75% 6

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 5723 79% 0% 238
2 Physics, Applied 3177 65% 0% 196
3 Physics, Condensed Matter 521 23% 0% 70
4 Nanoscience & Nanotechnology 348 12% 0% 37
5 Optics 25 5% 0% 16
6 Materials Science, Multidisciplinary 25 10% 0% 30
7 Materials Science, Coatings & Films 4 1% 0% 4
8 Nuclear Science & Technology 2 2% 0% 5
9 Electrochemistry 0 1% 0% 3
10 Physics, Nuclear 0 1% 0% 3

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 LEGELB ECUBLENS 201553 1% 100% 2
2 MEMORY DESIGN ENGN 201553 1% 100% 2
3 DESIGN SOLUT 151161 1% 50% 3
4 IMEP LAHC 133903 8% 6% 23
5 AMIRI 100776 0% 100% 1
6 BUBALEUP 100776 0% 100% 1
7 COMPOSANTS SEMICOND 100776 0% 100% 1
8 ELECT IES UMR 5214 100776 0% 100% 1
9 GRENOBLE ING 100776 0% 100% 1
10 GRENOBLE INPCNRSUMR 5130 100776 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE ELECTRON DEVICE LETTERS 33910 18% 1% 55
2 IEEE TRANSACTIONS ON ELECTRON DEVICES 27236 21% 0% 64
3 SOLID-STATE ELECTRONICS 26643 17% 1% 51
4 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 8901 1% 2% 4
5 MICROELECTRONIC ENGINEERING 2525 5% 0% 16
6 IEEE TRANSACTIONS ON NANOTECHNOLOGY 2024 2% 0% 6
7 IEICE ELECTRONICS EXPRESS 929 2% 0% 5
8 COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B 734 0% 1% 1
9 IEICE TRANSACTIONS ON ELECTRONICS 596 2% 0% 6
10 IEEE JOURNAL OF SOLID-STATE CIRCUITS 430 2% 0% 6

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 1T DRAM 2579861 11% 80% 32 Search 1T+DRAM Search 1T+DRAM
2 CAPACITORLESS DRAM 1951024 7% 88% 22 Search CAPACITORLESS+DRAM Search CAPACITORLESS+DRAM
3 CAPACITORLESS 1133726 5% 75% 15 Search CAPACITORLESS Search CAPACITORLESS
4 PSEUDO MOSFET 955496 5% 59% 16 Search PSEUDO+MOSFET Search PSEUDO+MOSFET
5 CAPACITORLESS 1T DRAM 937991 4% 85% 11 Search CAPACITORLESS+1T+DRAM Search CAPACITORLESS+1T+DRAM
6 FLOATING BODY CELL 705434 2% 100% 7 Search FLOATING+BODY+CELL Search FLOATING+BODY+CELL
7 FLOATING BODY CELL FBC 604658 2% 100% 6 Search FLOATING+BODY+CELL+FBC Search FLOATING+BODY+CELL+FBC
8 UNIFIED RAM URAM 548668 2% 78% 7 Search UNIFIED+RAM+URAM Search UNIFIED+RAM+URAM
9 PSEUDO MOSFET PSI MOSFET 503882 2% 100% 5 Search PSEUDO+MOSFET+PSI+MOSFET Search PSEUDO+MOSFET+PSI+MOSFET
10 FIELD EFFECT DIODE 453490 2% 75% 6 Search FIELD+EFFECT+DIODE Search FIELD+EFFECT+DIODE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 LIN, JT , LIN, PH , HAGA, SW , WANG, YC , LU, DR , (2015) TRANSIENT AND THERMAL ANALYSIS ON DISTURBANCE IMMUNITY FOR 4F(2) SURROUNDING GATE 1T-DRAM WITH WIDE TRENCHED BODY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 1. P. 61 -68 21 91% 3
2 NAVLAKHA, N , LIN, JT , KRANTI, A , (2016) IMPROVING RETENTION TIME IN TUNNEL FIELD EFFECT TRANSISTOR BASED DYNAMIC MEMORY BY BACK GATE ENGINEERING.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 21. P. - 25 64% 0
3 PARK, K , NAYAK, P , SCHRODER, DK , (2010) ROLE OF THE SUBSTRATE DURING PSEUDO-MOSFET DRAIN CURRENT TRANSIENTS.SOLID-STATE ELECTRONICS. VOL. 54. ISSUE 3. P. 316-322 16 94% 4
4 LIN, JT , LIN, PH , (2014) MULTIFUNCTION BEHAVIOR OF A VERTICAL MOSFET WITH TRENCH BODY STRUCTURE AND NEW ERASE MECHANISM FOR USE IN 1T-DRAM.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 9. P. 3172 -3178 13 100% 0
5 PARK, K , NAYAK, P , SCHRODER, DK , (2009) PSEUDO-MOSFET DRAIN-CURRENT TRANSIENTS: INFLUENCE OF THE SUBSTRATE.IEEE ELECTRON DEVICE LETTERS. VOL. 30. ISSUE 9. P. 993-995 15 94% 2
6 KIM, H , LEE, JH , PARK, BG , (2016) ASYMMETRIC DUAL-GATE-STRUCTURED ONE-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELLS FOR RETENTION CHARACTERISTICS IMPROVEMENT.APPLIED PHYSICS EXPRESS. VOL. 9. ISSUE 8. P. - 17 61% 0
7 CRISTOLOVEANU, S , BAWEDIN, M , IONICA, I , (2016) A REVIEW OF ELECTRICAL CHARACTERIZATION TECHNIQUES FOR ULTRATHIN FDSOI MATERIALS AND DEVICES.SOLID-STATE ELECTRONICS. VOL. 117. ISSUE . P. 10 -36 26 28% 4
8 PARK, K , NAYAK, P , CRISTOLOVEANU, S , SCHRODER, DK , (2009) PSEUDO-MOSFET SUBSTRATE EFFECTS OF DRAIN CURRENT HYSTERESIS AND TRANSIENT BEHAVIOR.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 56. ISSUE 6. P. 1269 -1276 13 81% 2
9 NAVLAKHA, N , LIN, JT , KRANTI, A , (2016) IMPROVED RETENTION TIME IN TWIN GATE 1T DRAM WITH TUNNELING BASED READ MECHANISM.IEEE ELECTRON DEVICE LETTERS. VOL. 37. ISSUE 9. P. 1127 -1130 12 75% 0
10 RODRIGUEZ, N , GAMIZ, F , NAVARRO, C , MARQUEZ, C , ANDRIEU, F , FAYNOT, O , CRISTOLOVEANU, S , (2015) EXPERIMENTAL DEVELOPMENTS OF A2RAM MEMORY SUBSTRATES CELLS ON SOI AND BULK SUBSTRATES.SOLID-STATE ELECTRONICS. VOL. 103. ISSUE . P. 7 -14 9 90% 1

Classes with closest relation at Level 1


Rank Class id link
1 566 FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET
2 10635 TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNELING FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT
3 12775 IEEE JOURNAL OF SOLID-STATE CIRCUITS//EMBEDDED DRAM//DRAM
4 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING
5 21308 BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION
6 32452 REVUE ROUMAINE DES SCIENCES TECHNIQUES-SERIE ELECTROTECHNIQUE ET ENERGETIQUE//BIONEC GRP//ELECT DEVICES CIRCUITS ARCHITECTU
7 20489 PN JUNCTION LEAKAGE//IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE
8 30345 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL
9 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT
10 20525 SCHOTTKY BARRIER SB//SCHOTTKY BARRIER MOSFET//DOPANT SEGREGATION

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