Class information for:
Level 1: LDMOS//SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
4515 1774 14.3 47%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
4515 1                   LDMOS//SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE 1774

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 LDMOS authKW 1246816 6% 67% 108
2 SPECIFIC ON RESISTANCE authKW 1134923 5% 79% 84
3 BREAKDOWN VOLTAGE authKW 743901 10% 23% 184
4 SUPERJUNCTION authKW 738688 3% 83% 52
5 POWER MOSFET authKW 624044 6% 35% 105
6 BREAKDOWN VOLTAGE BV authKW 572816 2% 79% 42
7 ON RESISTANCE authKW 370546 3% 45% 48
8 SUPERJUNCTION SJ authKW 350172 1% 88% 23
9 LATERAL INSULATED GATE BIPOLAR TRANSISTOR LIGBT authKW 293491 1% 95% 18
10 RESURF authKW 292236 2% 57% 30

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Engineering, Electrical & Electronic 32988 78% 0% 1383
2 Physics, Applied 11586 52% 0% 919
3 Physics, Condensed Matter 1590 17% 0% 308
4 Nanoscience & Nanotechnology 1545 11% 0% 191
5 Physics, Multidisciplinary 302 8% 0% 136
6 Telecommunications 85 2% 0% 44
7 Computer Science, Hardware & Architecture 24 1% 0% 17
8 Materials Science, Multidisciplinary 4 5% 0% 91
9 Computer Science, Interdisciplinary Applications 1 1% 0% 16
10 Film, Radio, Television 1 0% 0% 1

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ASIC SYST ENGN 227966 3% 25% 53
2 STATE ELECT THIN FILMS INTEGRATED DEVIC 162935 9% 6% 157
3 ANALOGUE INTEGRATED CIRCUITS 87123 1% 56% 9
4 IUT ROUEN 68836 0% 50% 8
5 SAGE ENISO 61465 0% 71% 5
6 24 55752 1% 36% 9
7 EMERGING TECHNOL 41213 2% 9% 28
8 MINIST EDUC WIDE BAND G SEMICOND MAT DEVICES 38426 1% 12% 18
9 AL LEITH ENGN 34422 0% 100% 2
10 CHINA 24 34422 0% 100% 2

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 192866 23% 3% 412
2 SOLID-STATE ELECTRONICS 58450 10% 2% 183
3 IEEE ELECTRON DEVICE LETTERS 52600 9% 2% 166
4 MICROELECTRONICS RELIABILITY 17859 5% 1% 85
5 MICROELECTRONICS JOURNAL 17740 4% 2% 63
6 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 10023 1% 2% 25
7 IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION 5759 1% 2% 15
8 SUPERLATTICES AND MICROSTRUCTURES 5416 3% 1% 45
9 CHINESE PHYSICS B 4316 3% 1% 50
10 IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS 4226 1% 2% 15

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 LDMOS 1246816 6% 67% 108 Search LDMOS Search LDMOS
2 SPECIFIC ON RESISTANCE 1134923 5% 79% 84 Search SPECIFIC+ON+RESISTANCE Search SPECIFIC+ON+RESISTANCE
3 BREAKDOWN VOLTAGE 743901 10% 23% 184 Search BREAKDOWN+VOLTAGE Search BREAKDOWN+VOLTAGE
4 SUPERJUNCTION 738688 3% 83% 52 Search SUPERJUNCTION Search SUPERJUNCTION
5 POWER MOSFET 624044 6% 35% 105 Search POWER+MOSFET Search POWER+MOSFET
6 BREAKDOWN VOLTAGE BV 572816 2% 79% 42 Search BREAKDOWN+VOLTAGE+BV Search BREAKDOWN+VOLTAGE+BV
7 ON RESISTANCE 370546 3% 45% 48 Search ON+RESISTANCE Search ON+RESISTANCE
8 SUPERJUNCTION SJ 350172 1% 88% 23 Search SUPERJUNCTION+SJ Search SUPERJUNCTION+SJ
9 LATERAL INSULATED GATE BIPOLAR TRANSISTOR LIGBT 293491 1% 95% 18 Search LATERAL+INSULATED+GATE+BIPOLAR+TRANSISTOR+LIGBT Search LATERAL+INSULATED+GATE+BIPOLAR+TRANSISTOR+LIGBT
10 RESURF 292236 2% 57% 30 Search RESURF Search RESURF

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 MAHABADI, SEJ , (2016) UPPER DRIFT REGION DOUBLE STEP PARTIAL SOI LDMOSFET: A NOVEL DEVICE FOR ENHANCING BREAKDOWN VOLTAGE AND OUTPUT CHARACTERISTICS.SUPERLATTICES AND MICROSTRUCTURES. VOL. 89. ISSUE . P. 345 -354 25 89% 12
2 MAHABADI, SEJ , RAJABI, S , LOIACONO, J , (2015) A NOVEL PARTIAL SOI LDMOSFET WITH PERIODIC BURIED OXIDE FOR BREAKDOWN VOLTAGE AND SELF HEATING EFFECT ENHANCEMENT.SUPERLATTICES AND MICROSTRUCTURES. VOL. 85. ISSUE . P. 872 -879 23 96% 10
3 YAO, JF , GUO, YF , LI, M , HUANG, XF , LIN, H , JI, XC , XU, Y , (2015) ANALYTICAL MODEL FOR SILICON-ON-INSULATOR LATERAL HIGH-VOLTAGE DEVICES USING VARIATION OF LATERAL THICKNESS TECHNIQUE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 54. ISSUE 2. P. - 21 100% 4
4 HU, SD , LUO, J , JIANG, YY , CHENG, K , CHEN, YH , JIN, JJ , WANG, JA , ZHOU, JL , TANG, F , ZHOU, XC , ET AL (2016) IMPROVING BREAKDOWN, CONDUCTIVE, AND THERMAL PERFORMANCES FOR SOI HIGH VOLTAGE LDMOS USING A PARTIAL COMPOUND BURIED LAYER.SOLID-STATE ELECTRONICS. VOL. 117. ISSUE . P. 146 -151 23 96% 0
5 ZHANG, WT , ZHANG, B , QIAO, M , LI, ZH , LUO, XR , LI, ZJ , (2017) OPTIMIZATION AND NEW STRUCTURE OF SUPERJUNCTION WITH ISOLATOR LAYER.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 64. ISSUE 1. P. 217 -223 21 100% 0
6 HU, Y , WANG, H , DU, CX , MA, MM , CHAN, MS , HE, J , WANG, GF , (2016) A HIGH-VOLTAGE (> 600 V) N-ISLAND LDMOS WITH STEP-DOPED DRIFT REGION IN PARTIAL SOI TECHNOLOGY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 5. P. 1969 -1976 23 92% 0
7 ELAHIPANAH, H , OROUJI, AA , (2010) A 1300-V 0.34-OMEGA . CM(2) PARTIAL SOI LDMOSFET WITH NOVEL DUAL CHARGE ACCUMULATION LAYERS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 8. P. 1959 -1965 21 100% 13
8 CHEN, YH , HU, SD , CHENG, K , JIANG, YY , LUO, J , WANG, JA , TANG, F , ZHOU, XC , ZHOU, JL , GAN, P , (2016) A NOVEL LOW SPECIFIC ON-RESISTANCE DOUBLE-GATE LDMOS WITH MULTIPLE BURIED P-LAYERS IN THE DRIFT REGION BASED ON THE SILICON-ON-INSULATOR SUBSTRATE.SUPERLATTICES AND MICROSTRUCTURES. VOL. 89. ISSUE . P. 59 -67 17 100% 1
9 ZHANG, J , GUO, YF , SUN, YB , YANG, KM , LIN, H , XIA, XJ , ZHANG, CC , (2016) A NEW PHYSICAL INSIGHT OF RESURF EFFECTS BASED ON GRADUAL CHARGE APPOINTMENT CONCEPT FOR BULK SILICON LATERAL POWER DEVICES.SUPERLATTICES AND MICROSTRUCTURES. VOL. 92. ISSUE . P. 111 -123 18 100% 0
10 HU, SD , WU, XH , ZHU, Z , JIN, JJ , CHEN, YH , (2014) PARTIAL-SOI HIGH VOLTAGE LATERALLY DOUBLE-DIFFUSED MOS WITH A PARTIALLY BURIED N(+)-LAYER.CHINESE PHYSICS B. VOL. 23. ISSUE 6. P. - 18 100% 1

Classes with closest relation at Level 1


Rank Class id link
1 5040 IGBT//INSULATED GATE BIPOLAR TRANSISTOR IGBT//INSULATED GATE BIPOLAR TRANSISTORS
2 30345 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL
3 24234 MESFET//4H SIC MESFET//SIC MESFET
4 10961 ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR//NANOELECT GIGASCALE SYST
5 21249 EMITTER TURN OFF THYRISTOR ETO//GATE COMMUTATED THYRISTOR GCT//MAXIMUM CONTROLLABLE CURRENT
6 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING
7 25406 MSOS O P STRUCTURE//SI2H6 GAS//SEMI INSULATING POLYCRYSTALLINE SILICON
8 6444 EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS
9 21194 SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP
10 26157 VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX

Go to start page