Class information for:
Level 1: FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
566 3300 19.2 59%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
566 1                   FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET 3300

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 FINFET authKW 869589 8% 36% 262
2 SHORT CHANNEL EFFECTS authKW 781032 6% 45% 189
3 DOUBLE GATE MOSFET authKW 740786 4% 65% 124
4 COMPACT MODEL authKW 452174 5% 30% 164
5 SHORT CHANNEL EFFECTS SCES authKW 444496 2% 78% 62
6 MOSFET authKW 375700 11% 11% 369
7 SOI MOSFET authKW 356161 2% 51% 76
8 IEEE TRANSACTIONS ON ELECTRON DEVICES journal 350001 23% 5% 757
9 JUNCTIONLESS authKW 338016 2% 70% 52
10 DOUBLE GATE authKW 316040 2% 42% 81

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Engineering, Electrical & Electronic 58488 76% 0% 2514
2 Physics, Applied 32952 63% 0% 2086
3 Physics, Condensed Matter 5556 23% 0% 755
4 Nanoscience & Nanotechnology 4417 13% 0% 432
5 Computer Science, Hardware & Architecture 348 2% 0% 70
6 Materials Science, Multidisciplinary 168 9% 0% 287
7 Optics 72 3% 0% 115
8 Physics, Multidisciplinary 36 3% 0% 112
9 Mathematics, Interdisciplinary Applications 9 1% 0% 29
10 Materials Science, Coatings & Films 0 1% 0% 17

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 NANO DEVICE SIMULAT 182261 1% 73% 27
2 DEEN DAYAL UPADHYAYA 146751 1% 36% 44
3 MOTILAL NEHRU 136744 1% 48% 31
4 NISRC 84101 0% 91% 10
5 ELECT ENGN DISCIPLINE 83256 0% 75% 12
6 LOW POWER NANOELECT GRP 83256 0% 75% 12
7 SEMICOND DEVICE 80494 2% 16% 56
8 ENGN ELECT ELECT AUTOMAT 74555 1% 18% 44
9 INTEGRATED MICROSYST 74056 1% 28% 29
10 SEMICOND DEVICES 73500 1% 22% 36

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 350001 23% 5% 757
2 SOLID-STATE ELECTRONICS 197990 14% 5% 459
3 IEEE ELECTRON DEVICE LETTERS 103787 10% 4% 318
4 JOURNAL OF COMPUTATIONAL ELECTRONICS 39653 2% 6% 67
5 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 18526 1% 6% 33
6 IEEE TRANSACTIONS ON NANOTECHNOLOGY 17352 2% 3% 58
7 MICROELECTRONICS JOURNAL 13103 2% 2% 74
8 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 9941 1% 3% 33
9 MICROELECTRONICS RELIABILITY 9750 3% 1% 86
10 SUPERLATTICES AND MICROSTRUCTURES 9195 2% 1% 80

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 FINFET 869589 8% 36% 262 Search FINFET Search FINFET
2 SHORT CHANNEL EFFECTS 781032 6% 45% 189 Search SHORT+CHANNEL+EFFECTS Search SHORT+CHANNEL+EFFECTS
3 DOUBLE GATE MOSFET 740786 4% 65% 124 Search DOUBLE+GATE+MOSFET Search DOUBLE+GATE+MOSFET
4 COMPACT MODEL 452174 5% 30% 164 Search COMPACT+MODEL Search COMPACT+MODEL
5 SHORT CHANNEL EFFECTS SCES 444496 2% 78% 62 Search SHORT+CHANNEL+EFFECTS+SCES Search SHORT+CHANNEL+EFFECTS+SCES
6 MOSFET 375700 11% 11% 369 Search MOSFET Search MOSFET
7 SOI MOSFET 356161 2% 51% 76 Search SOI+MOSFET Search SOI+MOSFET
8 JUNCTIONLESS 338016 2% 70% 52 Search JUNCTIONLESS Search JUNCTIONLESS
9 DOUBLE GATE 316040 2% 42% 81 Search DOUBLE+GATE Search DOUBLE+GATE
10 DIBL 287492 2% 60% 52 Search DIBL Search DIBL

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 PARIHAR, MS , KRANTI, A , (2014) REVISITING THE DOPING REQUIREMENT FOR LOW POWER JUNCTIONLESS MOSFETS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 29. ISSUE 7. P. - 42 93% 13
2 KRANTI, A , HAO, Y , ARMSTRONG, GA , (2008) PERFORMANCE PROJECTIONS AND DESIGN OPTIMIZATION OF PLANAR DOUBLE GATE SOI MOSFETS FOR LOGIC TECHNOLOGY APPLICATIONS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 23. ISSUE 4. P. - 46 85% 4
3 PARIHAR, MS , GHOSH, D , KRANTI, A , (2013) SINGLE TRANSISTOR LATCH PHENOMENON IN JUNCTIONLESS TRANSISTORS.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 18. P. - 33 97% 2
4 BARI, S , DE, D , SARKAR, A , (2015) EFFECT OF GATE ENGINEERING IN JLSRG MOSFET TO SUPPRESS SCES: AN ANALYTICAL STUDY.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. VOL. 67. ISSUE . P. 143 -151 33 92% 0
5 BARAL, B , DAS, AK , DE, D , SARKAR, A , (2016) AN ANALYTICAL MODEL OF TRIPLE-MATERIAL DOUBLE-GATE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR TO SUPPRESS SHORT-CHANNEL EFFECTS.INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. VOL. 29. ISSUE 1. P. 47 -62 29 94% 1
6 HIBLOT, G , LACORD, J , AKBAL, M , RAFHAY, Q , BOEUF, F , GHIBAUDO, G , (2015) COMPACT MODEL OF SHORT-CHANNEL EFFECTS FOR FDSOI DEVICES INCLUDING THE INFLUENCE OF BACK-BIAS AND FRINGING FIELDS FOR SI AND III-V TECHNOLOGY.SOLID-STATE ELECTRONICS. VOL. 107. ISSUE . P. 1 -7 29 100% 1
7 HU, GX , HU, SY , FENG, JH , LIU, R , WANG, LL , ZHENG, LR , (2016) ANALYTICAL MODELS FOR CHANNEL POTENTIAL, THRESHOLD VOLTAGE, AND SUBTHRESHOLD SWING OF JUNCTIONLESS TRIPLE-GATE FINFETS.MICROELECTRONICS JOURNAL. VOL. 50. ISSUE . P. 60 -65 25 100% 2
8 VISHVAKARMA, SK , SAXENA, AK , DASGUPTA, S , (2008) TWO DIMENSIONAL ANALYTICAL POTENTIAL MODELING OF NANOSCALE FULLY DEPLETED METAL GATE DOUBLE GATE MOSFET.JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS. VOL. 3. ISSUE 3. P. 297-306 34 100% 1
9 SAHAY, S , KUMAR, MJ , (2017) SYMMETRIC OPERATION IN AN EXTENDED BACK GATE JLFET FOR SCALING TO THE 5-NM REGIME CONSIDERING QUANTUM CONFINEMENT EFFECTS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 64. ISSUE 1. P. 21 -27 31 89% 0
10 KILCHYTSKA, V , ARSHAD, MKM , MAKOVEJEV, S , OLSEN, S , ANDRIEU, F , POIROUX, T , FAYNOT, O , RASKIN, JP , FLANDRE, D , (2012) ULTRA-THIN BODY AND THIN-BOX SOI CMOS TECHNOLOGY ANALOG FIGURES OF MERIT.SOLID-STATE ELECTRONICS. VOL. 70. ISSUE . P. 50 -58 33 89% 7

Classes with closest relation at Level 1


Rank Class id link
1 26157 VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX
2 24736 1T DRAM//CAPACITORLESS DRAM//CAPACITORLESS
3 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT
4 13793 DEVICE MODELLING GRP//RANDOM DOPANT FLUCTUATION//RANDOM DOPANT
5 6444 EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS
6 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
7 30345 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL
8 20525 SCHOTTKY BARRIER SB//SCHOTTKY BARRIER MOSFET//DOPANT SEGREGATION
9 10635 TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNELING FIELD EFFECT TRANSISTOR TFET//BAND TO BAND TUNNELING BTBT
10 12282 NOISE PARAMETERS//CHANNEL THERMAL NOISE//INDUCED GATE NOISE

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