Class information for:
Level 1: EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
6444 1482 15.1 45%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
6 3       PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON 155028
532 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//MOSFET//FINFET 14860
6444 1                   EFFECTIVE CHANNEL LENGTH//IEEE TRANSACTIONS ON ELECTRON DEVICES//LOW TEMPERATURE ELECTRONICS 1482

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 EFFECTIVE CHANNEL LENGTH authKW 206579 1% 53% 19
2 IEEE TRANSACTIONS ON ELECTRON DEVICES journal 145400 22% 2% 327
3 LOW TEMPERATURE ELECTRONICS authKW 141744 1% 40% 17
4 SOLID-STATE ELECTRONICS journal 131944 17% 3% 251
5 CRYOGENIC CMOS authKW 103012 0% 100% 5
6 MOSFET authKW 85482 8% 4% 118
7 DEEP SUBMICRON MOSFET authKW 82406 0% 67% 6
8 SOURCE RESISTANCE authKW 75844 1% 41% 9
9 NONQUASI STATIC NQS EFFECT authKW 64379 0% 63% 5
10 C R METHOD authKW 61807 0% 100% 3

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Engineering, Electrical & Electronic 27640 78% 0% 1157
2 Physics, Applied 10743 54% 0% 806
3 Computer Science, Hardware & Architecture 2413 7% 0% 110
4 Physics, Condensed Matter 1921 20% 0% 302
5 Computer Science, Interdisciplinary Applications 724 7% 0% 97
6 Nanoscience & Nanotechnology 144 4% 0% 64
7 Thermodynamics 141 3% 0% 46
8 Instruments & Instrumentation 105 4% 0% 52
9 Physics, Multidisciplinary 51 5% 0% 67
10 Engineering, General 4 1% 0% 14

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ELECT ELECT INFORMAT TELECOMMUN ENGN 41205 0% 100% 2
2 ADV DISCPLAY 20602 0% 100% 1
3 ADV STUDIES MATTER 20602 0% 100% 1
4 ARCHITECTURE IC DESIGN EMBEDDED SOFTWARE 20602 0% 100% 1
5 CENT INTEGRAT 20602 0% 100% 1
6 CINCINNATI BIOBANK 20602 0% 100% 1
7 CNRSUMR 5130IMEP LAHC 20602 0% 100% 1
8 CORP DEV VLSI TECHNOL 20602 0% 100% 1
9 CUSTOMER INTEGRAT ENGN 20602 0% 100% 1
10 DAT LIB TI 20602 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 145400 22% 2% 327
2 SOLID-STATE ELECTRONICS 131944 17% 3% 251
3 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 32785 6% 2% 88
4 IEEE ELECTRON DEVICE LETTERS 18445 6% 1% 90
5 IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION 9943 1% 3% 18
6 CRYOGENICS 8494 3% 1% 45
7 ELECTRON DEVICE LETTERS 5527 1% 3% 9
8 IEEE JOURNAL OF SOLID-STATE CIRCUITS 5220 3% 1% 46
9 IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS 4667 1% 2% 13
10 IEEE CIRCUITS & DEVICES 3806 1% 2% 8

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 EFFECTIVE CHANNEL LENGTH 206579 1% 53% 19 Search EFFECTIVE+CHANNEL+LENGTH Search EFFECTIVE+CHANNEL+LENGTH
2 LOW TEMPERATURE ELECTRONICS 141744 1% 40% 17 Search LOW+TEMPERATURE+ELECTRONICS Search LOW+TEMPERATURE+ELECTRONICS
3 CRYOGENIC CMOS 103012 0% 100% 5 Search CRYOGENIC+CMOS Search CRYOGENIC+CMOS
4 MOSFET 85482 8% 4% 118 Search MOSFET Search MOSFET
5 DEEP SUBMICRON MOSFET 82406 0% 67% 6 Search DEEP+SUBMICRON+MOSFET Search DEEP+SUBMICRON+MOSFET
6 SOURCE RESISTANCE 75844 1% 41% 9 Search SOURCE+RESISTANCE Search SOURCE+RESISTANCE
7 NONQUASI STATIC NQS EFFECT 64379 0% 63% 5 Search NONQUASI+STATIC+NQS+EFFECT Search NONQUASI+STATIC+NQS+EFFECT
8 C R METHOD 61807 0% 100% 3 Search C+R+METHOD Search C+R+METHOD
9 CHANNEL LENGTH EXTRACTION 61807 0% 100% 3 Search CHANNEL+LENGTH+EXTRACTION Search CHANNEL+LENGTH+EXTRACTION
10 COMPACT MOSFET MODEL 61807 0% 100% 3 Search COMPACT+MOSFET+MODEL Search COMPACT+MOSFET+MODEL

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 ORTIZ-CONDE, A , GARCIA-SANCHEZ, FJ , MUCI, J , BARRIOS, AT , LIOU, JJ , HO, CS , (2013) REVISITING MOSFET THRESHOLD VOLTAGE EXTRACTION METHODS.MICROELECTRONICS RELIABILITY. VOL. 53. ISSUE 1. P. 90 -104 38 60% 28
2 SIMOEN, E , CLAEYS, C , MARTINO, JA , (1996) PARAMETER EXTRACTION OF MOSFETS OPERATED AT LOW TEMPERATURE.JOURNAL DE PHYSIQUE IV. VOL. 6. ISSUE C3. P. 29 -42 59 66% 2
3 ORTIZ-CONDE, A , SANCHEZ, FJG , LIOU, JJ , CERDEIRA, A , ESTRADA, M , YUE, Y , (2002) A REVIEW OF RECENT MOSFET THRESHOLD VOLTAGE EXTRACTION METHODS.MICROELECTRONICS RELIABILITY. VOL. 42. ISSUE 4-5. P. 583 -596 26 81% 213
4 SANCHEZ, FJG , ORTIZ-CONDE, A , LIOU, JJ , (1999) ON THE EXTRACTION OF THE SOURCE AND DRAIN SERIES RESISTANCES OF MOSFETS.MICROELECTRONICS RELIABILITY. VOL. 39. ISSUE 8. P. 1173 -1184 26 90% 10
5 IHMIG, FR , SHIRLEY, SG , ZIMMERMANN, H , (2015) BATCH SCREENING OF COMMERCIAL SERIAL FLASH-MEMORY INTEGRATED CIRCUITS FOR LOW-TEMPERATURE APPLICATIONS.CRYOGENICS. VOL. 71. ISSUE . P. 39 -46 15 94% 1
6 SUCRE-GONZALEZ, A , ZARATE-RINCON, F , ORTIZ-CONDE, A , TORRES-TORRES, R , GARCIA-SANCHEZ, FJ , MUCI, J , MURPHY-ARTEAGA, RS , (2016) A DC METHOD TO EXTRACT MOBILITY DEGRADATION AND SERIES RESISTANCE OF MULTIFINGER MICROWAVE MOSFETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 63. ISSUE 5. P. 1821 -1826 22 63% 0
7 JOODAKI, M , (2009) AN EXTENDED DRAIN CURRENT CONDUCTANCE EXTRACTION METHOD AND ITS APPLICATION TO DRAM SUPPORT AND ARRAY DEVICES.SOLID-STATE ELECTRONICS. VOL. 53. ISSUE 9. P. 1020-1031 18 86% 1
8 HE, P , KE, DM , HU, PF , (2016) TWO-DIMENSIONAL PHYSICALLY BASED SEMI-ANALYTICAL MODEL OF SOURCE/DRAIN SERIES RESISTANCE IN MOSFETS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 55. ISSUE 1. P. - 14 93% 0
9 TAUR, Y , (2000) MOSFET CHANNEL LENGTH: EXTRACTION AND INTERPRETATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 47. ISSUE 1. P. 160 -170 17 100% 81
10 JOODAKI, M , (2015) ON THE EXTRACTION OF THE EXTERNAL DRAIN AND SOURCE RESISTORS AND EFFECTIVE CHANNEL LENGTH IN SI-MOSFET.SOLID-STATE ELECTRONICS. VOL. 111. ISSUE . P. 1 -6 18 67% 1

Classes with closest relation at Level 1


Rank Class id link
1 21308 BEAM CHANNEL TRANSISTOR//MEMORY DEVICE BUSINESS//IMPURITY ENHANCED OXIDATION
2 22955 QUANTUM MECHANICAL EFFECTS//WAVE FUNCTION PENETRATION//QUANTUM MECHANICAL EFFECTS QMES
3 4469 HOT CARRIERS//HOT CARRIER DEGRADATION//CHARGE PUMPING
4 26157 VERTICAL MOSFET//GROOVED GATE MOSFET//FILLET LOCAL OXIDATION FILOX
5 566 FINFET//SHORT CHANNEL EFFECTS//DOUBLE GATE MOSFET
6 12282 NOISE PARAMETERS//CHANNEL THERMAL NOISE//INDUCED GATE NOISE
7 3722 STRAINED SI//MOSFET//BALLISTIC TRANSPORT
8 37119 2K X 2K//CHINA SCI TECHNOL INFRARED DETECTO//DEBYE CHARACTERISTIC TEMPERATURE
9 30345 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//LATERAL BIPOLAR TRANSISTOR//ABT BAUELEMENTETECHNOL
10 21285 SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION//DYNAMIC RANDOM ACCESS MEMORY

Go to start page